light emitting diodes using inxga1-xp quantum ... - ece 443 › files › 2018 › 09 › led... ·...
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Light emitting diodes using InxGa1-xP quantum
well structures for wound healing
Kaitlyn Parsons
ECE 498CB – Professor Bayram
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Outline
• Motivation and background
• Simulation results
• Final Structure
• Summary
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Outline
• Motivation and background
• Simulation results
• Final Structure
• Summary
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Motivation and background
1
• Light therapy used to treat skin wounds• Traditional methods ➔ thermal damage
• 610 – 650 nm wavelengths for difficult to heal wounds
• LEDs ➔ tunable emission• Forward biased p-n junction
• low-cost, mobile, safe
Sparkfun (2018).BioPhotas (2015).
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Outline
• Motivation and background
• Simulation results• Indium composition in wells
• Number of quantum wells
• Well thickness
• Final Structure
• Summary
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Lateral LED structure
2
• Target emission wavelength: 610 – 650 nm• InxGa1-xP active region material
• (Al0.6Ga0.4)0.5In0.5P barriers
• Wavelength tunability: well composition, width
E. F. Schubert, Light emitting diodes (2006).
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Indium composition
3
• Increasing In red-shifts spectrum
• Turn-on voltage decreases with increasing In
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Indium composition
3
• Increasing In red-shifts spectrum
• Turn-on voltage decreases with increasing In
• Internal quantum efficiency increases with In
• Maximum radiative recombination increases with In
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Number of quantum wells
4
• Increasing number of wells increases emission intensity
• Turn-on voltage decreases with number of wells
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Number of quantum wells
4
• Increasing number of wells increases emission intensity
• Turn-on voltage decreases with number of wells
• Decrease in internal quantum efficiency with more wells
• Total radiative recombination evenly distributed between
wells
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Well thickness
5
• Increasing well width red-shifts peak emission
• Turn-on voltage decreases with increasing width
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Well thickness
5
• Increasing well width red-shifts peak emission
• Turn-on voltage decreases with increasing width
• Internal quantum efficiency decreases with increasing
width
• Radiative recombination decreases with increasing
width
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Outline
• Motivation and background
• Simulation results
• Final Structure
• Summary
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Final LED structure
6
• 5 quantum wells
• 5 nm thick wells and barrier
• In0.55Ga0.45P composition
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Final LED structure
6
• 5 quantum wells
• 5 nm thick wells and barrier
• In0.55Ga0.45P composition
• Peak emission = 647 nm
• Turn-on voltage = 1.8 V
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Outline
• Motivation and background
• Simulation results
• Final Structure
• Summary
![Page 17: Light emitting diodes using InxGa1-xP quantum ... - ECE 443 › files › 2018 › 09 › LED... · P quantum well structures for wound healing Kaitlyn Parsons ... Final LED structure](https://reader034.vdocument.in/reader034/viewer/2022042401/5f1022b27e708231d4479f85/html5/thumbnails/17.jpg)
Summary
7
• 610 – 650 nm light required for difficult to heal wounds
• InGaP/(AlGa)InP multiple quantum well LED
• Composition and well width tunes emission wavelength
• 55% In, 5 nm well, 5 wells optimum for 647 nm emission
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Thank you!