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CiEN Seminar, May 26 2011, Paris 1 Low Power Optimization Techniques Pr. Amara AMARA [email protected] Institut Supérieur dElectronique de Paris

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Page 1: Low Power Optimization Techniques Pr. Amara AMARA · Low-power circuits Parallelism Power aware OS ... Decoder b(t) (B(t-1) + S) If INC = 1 B(t) If INC = 0 S may be known by the encoder

CiEN Seminar, May 26 2011, Paris 1

Low Power Optimization Techniques

Pr. Amara AMARA [email protected]

Institut Supérieur d’Electronique de Paris

Page 2: Low Power Optimization Techniques Pr. Amara AMARA · Low-power circuits Parallelism Power aware OS ... Decoder b(t) (B(t-1) + S) If INC = 1 B(t) If INC = 0 S may be known by the encoder

CiEN Seminar, May 26 2011, Paris 2

OUTLINE

Introduction Power Components Dynamic Power Optimization Leakage Power Optimization Dynamic Power Management Conclusions

Page 3: Low Power Optimization Techniques Pr. Amara AMARA · Low-power circuits Parallelism Power aware OS ... Decoder b(t) (B(t-1) + S) If INC = 1 B(t) If INC = 0 S may be known by the encoder

CiEN Seminar, May 26 2011, Paris 3

Motivations for Low Power   Enables developers to address more power-

constrained or thermally-restrictive market;   Provides developers more freedom to increase

capabilities within the same thermal and power budget;

  Lowers operational and material costs and results in more compact products;

  Reduces stringent cooling requirements;   Provides social responsibility benefits. Component suppliers must provide developers and manufacturers with the best options to save energy.

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CiEN Seminar, May 26 2011, Paris 4

ION and IOFF Trends (ITRS Roadmap)

10 -7

10 -6

10 -5

0.0 001

0.001

0.01

0.1

1

10

020406080100

Ioff Trends (ITRS)Ioff (LOP)Ioff (LSTP)Ioff (HP)

Technology node (nm)100

1000

10 4

10 5

10 6

10 7

10 8

10 9

020406080100

Ion/Ioff Trends for 3 Transistor Types (ITRS)

Ion/Ioff (LOP)Ion/Ioff (LSTP)Ion/Ioff (HP)

Technology node (nm)

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CiEN Seminar, May 26 2011, Paris 5

Introduction: Low Power Technology

Process Hardware Architecture Software Multi VTH Low-power circuits Parallelism Power aware OS

SOI Operand isolation Memory architecture Compilers

Material Clock-gating Cache partitioning Memory Access Multi-gate (FinFet,

…) Voltage and frequency

scaling Thermal monitor

Asynchronous design

Power gating

Body bias

Stacked transistors

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CiEN Seminar, May 26 2011, Paris 6

OUTLINE Introduction Power Components

Dynamic Power Leakage Power

Dynamic Power Optimization Leakage Power Optimization Dynamic Power Management Conclusions

Page 7: Low Power Optimization Techniques Pr. Amara AMARA · Low-power circuits Parallelism Power aware OS ... Decoder b(t) (B(t-1) + S) If INC = 1 B(t) If INC = 0 S may be known by the encoder

CiEN Seminar, May 26 2011, Paris 7

Dynamic Power

  The switching activity α is the average percentage of the nodes that actually toggles 0->1 in the total chip   The switching activity includes

glitches spurious activity   The switching activity increases

dramatically with pipelining   CL is the total equivalent Capacitance

  CL includes both gate and wire capacitance

  CL is an average capacitance (Caps vary with biasing, Xtalk, …)

P = α CL VS VDD FCLK

-> CL・VDD・VS energy consumption per cycle

VDD

CL

E=QVDD Q=CLVS

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CiEN Seminar, May 26 2011, Paris 8

Dynamic Power Reduction

  Lowering switching probability (α)   Gated clock, Conditional F/F   Low transition coding

  Lowering load capacitance (CL)   Embedded memory, Gate sizing   Low-k

  Lowering supply voltage (VS ,VDD)   Most effective (∝VDD

2) and popular, but at the cost of speed degradation

  VTH should also be lowered for high-speed circuit operation

  Lowering operating frequency (fCLK)   Better algorithm, parallelism

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CiEN Seminar, May 26 2011, Paris 9

Leakage Components

  Leakage current   Current that flows due to inability to shut-off

transistor   Transistors are harder to turn off with smaller

Vth   Standby Leakage

  Leakage that occurs when overall circuit is sleeping (example: Cell phone in sleep mode)

  Active Leakage   Leakage that occurs while overall circuit is

operating (example FPU while PC performs integer operation)

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CiEN Seminar, May 26 2011, Paris 10

Leakage Current Trends

gate Source

Drain

IPT

Isub

IG Bulk IGIDL IR

Subthreshold and gate leakage are The dominant ones for the current technologies

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CiEN Seminar, May 26 2011, Paris 11

OUTLINE Introduction Power Components Dynamic Power Optimization

Clock Gating Encoding Dual Vdd, DVS, DVFS

Leakage Power Optimization Dynamic Power Management Conclusions

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CiEN Seminar, May 26 2011, Paris 12

Clock Gating Principle

  Goal Disable or suppress transitions from propagating to parts of the clock path (FFs, clock network and logic) under a given IDLE condition.

  Principle To each sequential functional unit is associated a block CG which inhibits the clock signal when the IDLE condition is true. The IDLE condition is computed by function Fcg

Page 13: Low Power Optimization Techniques Pr. Amara AMARA · Low-power circuits Parallelism Power aware OS ... Decoder b(t) (B(t-1) + S) If INC = 1 B(t) If INC = 0 S may be known by the encoder

CiEN Seminar, May 26 2011, Paris 13

Clock Gating Implementation

Simplest way to implement block CG but subject to spikes.

When CLK is low, spikes are filtered by the AND When CLK is high, spikes are filtered by the Latch

Flip-Flop-Based Design

When CLK is high, spikes are filtered by the NOR When CLK is low, spikes are filtered by the Latch

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CiEN Seminar, May 26 2011, Paris 14

DSP/ HIF

DEU

MIF

VDE

896Kb SRAM

How effective is Clock-gating?

M. Ohashi, Matsushita, ISSCC 2002

90% of F/F’s were clock-gated. 70% power reduction by clock-gating alone.

MPEG4 decoder

10

8.5mW

0 15 5

30.6mW

20 25

Without clock gating

With clock gating

Power [mW]

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CiEN Seminar, May 26 2011, Paris 15

Data Path: Pre-Computation

Principle:   Partition the inputs into pre-computed and gated

inputs   If output f is independent of gated inputs then

predictor G generates a signal that freezes the outputs of R2.

  Function G is not unique best trade-off to find

CombinationalCircuit

R1

R2

G(X)

Pre-computed inputs

Gated inputs

Output

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CiEN Seminar, May 26 2011, Paris

Data Path: Pre-Computation

  Power savings up to 75% can be achieved with marginal increase in delay and area.

The pre-computation logic is: g1 = An . Bn g2 = An . Bn g1 + g2 = An xor Bn

Example: Binary comparator (A>B)

16

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CiEN Seminar, May 26 2011, Paris 17

Data Path: Guarded Evaluation

  Applicable to combin. Blocks emb. within logic

  If Y is idle, transparent latches are inserted to all inputs

  Control circuitry is added to determine the IDLE condition

  The IDLE condition is used to disable the latches.

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CiEN Seminar, May 26 2011, Paris 18

Bus Coding

Sender Receiver b(t)

Less switching activity

Sender Receiver Encoder Decoder B(t) b(t) b(t)

b(t): Source word B(t): Code word

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CiEN Seminar, May 26 2011, Paris 19

Bus Invert Coding

 The encoding depends on Hamming distance between the present bus value B(t) and the next bus value B(t+1)

(B(t), INV(t)) = (b(t), 0) if H <= N/2

(b’(t), 1) Otherwise

N: number of bus lines, H: Hamming Distance

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CiEN Seminar, May 26 2011, Paris 20

Bus Invert Coding

00101010 00111011 2 11010100 7 11110100 1 00001101 6 01110110 6 00010001 5 10000100 4

00101010 00111011 0 2 00101011 1 2 11110100 1 1 00001101 0 3 10001001 1 3 00010001 0 4 10000100 0 4

Binary (31 Trs) BIC (19 Trs)

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CiEN Seminar, May 26 2011, Paris 21

T0 Code: Principle Encoder

(B(t), INC(t)) (B(t-1), 1) If b(t) = b(t-1) + S

(b(t), 0) Otherwise

Decoder

b(t) (B(t-1) + S) If INC = 1

B(t) If INC = 0 S may be known by the encoder and the decoder or send on the bus

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CiEN Seminar, May 26 2011, Paris 22

T0 Code: example

4 00000100 00000100 0 5 00000101 1 00000100 1 1 6 00000110 2 00000100 1 0 7 00000111 1 00000100 1 0 8 00001000 4 00000100 1 0 6 00000110 3 00000110 0 2 7 00000111 1 00000110 1 1 8 00001000 4 00000110 1 0

Binary encoding: T0 encoding: 16 Transitions 4 Transitions

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CiEN Seminar, May 26 2011, Paris 23

OUTLINE Introduction Power Components Dynamic Power Optimization Leakage Power Optimization

Background Leakage Minimization techniques

Dynamic Power Management Conclusions

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CiEN Seminar, May 26 2011, Paris 24

Minimum Leakage Vector

  The leakage current of a logic gate is a strong function of its input values because they affect the number of OFF transistors in the NMOS and PMOS networks of a logic gate.

  Leakage can be reduced in standby mode by driving the circuit with the MLV

  Advantages: 1. No modification in the process technology is required 2. No change in the internal logic gates of the circuit is necessary 3. There is no reduction in voltage swing 4. Technology scaling does not have a negative effect on its

effectiveness or its overhead. In fact the stack effect becomes stronger with technology scaling as DIBL worsens.

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CiEN Seminar, May 26 2011, Paris 25

Technology: 0.18 µm Supply Voltage = 1.5V Threshold Voltage = 0.2V

Minimum Leakage Vector

A0 A1 Leakage 0 0 23.60 nA

47.15 nA 51.42 nA

82.94 nA

0 1 1 0 1 1

A0 A1

A0

A1 MLV

The maximum leakage is 3X higher than the minimum

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CiEN Seminar, May 26 2011, Paris 26

Low-VTH, Higher speed Higher power Critical paths

Non-critical paths

High-VTH, Lower speed Lower power

Dual VTH Design Principle

Critical Path

FF

FF

FF

FF FF

FF FF

FF

FF FF

0% 5%

10% 15% 20% 25% 30% 35% 40% 45% 50% 55% 60%

0% 5% 10% 15% 20% 25% % timing scaling from all high - Vt design

very

low - Vt

tran

sist

or w

idth

(a

s %

of t

otal

tran

sist

or w

idth

)

0% 5%

10% 15% 20% 25% 30% 35% 40% 45% 50% 55% 60%

0% 5% 10% 15% 20% 25% % timing scaling from all high - Vt design

very

low - Vt

tran

sist

or w

idth

(a

s %

of t

otal

tran

sist

or w

idth

)

Full low - Vt performance! low - Vt usage: 34%

0% 5%

10% 15% 20% 25% 30% 35% 40% 45% 50% 55% 60%

0% 5% 10% 15% 20% 25% % timing scaling from all high - Vt design

very

low - Vt

tran

sist

or w

idth

(a

s %

of t

otal

tran

sist

or w

idth

)

0% 5%

10% 15% 20% 25% 30% 35% 40% 45% 50% 55% 60%

0% 5% 10% 15% 20% 25% % timing scaling from all high - Vt design

very

low - Vt

tran

sist

or w

idth

(a

s %

of t

otal

tran

sist

or w

idth

)

Full low - Vt performance! low - Vt usage: 34%

Source: Vivek De, Intel

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CiEN Seminar, May 26 2011, Paris 27

High-VDD, Low-VTH, Large-W Higher speed Higher power

Critical paths Non-critical paths

Low-VDD, High-VTH, Small-W Lower speed Lower power

Dual VDD/VTH reduces active leakage power

Critical Path

FF

FF

FF

FF FF FF

FF

FF

FF FF

Rule of thumb VDDL/VDDH=0.6~0.7 minimizes Ptotal. (Kuroda, JSSC 2000)

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CiEN Seminar, May 26 2011, Paris 28

VTCMOS

  Threshold voltage is controlled through substrate biasing

  Vbb can be used to compensate Vth fluctuation

0.27±0.02V @active mode

  In standby mode, Vbb is applied so that Vth>0.5V

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CiEN Seminar, May 26 2011, Paris 29

Design Example (1)

16Mbit DRAM

Speech Codec

Multiplexer

MPEG-4 Video Codec

Host I/F

DRAM

I/F

PLL Cam I/F

Display I/F

Pre- filter

VT VT

VT VT

T=27 ℃

-0.1 0 0.1 0.2 0.3 0.4 0.5 (¦ V TH .p ¦+ V TH.n )/2 as processed (V)

VTCMOS in active mode

VTCMOS in standby mode

I DD

.leak

(A

)

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

(Coutesy Kuroda)

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CiEN Seminar, May 26 2011, Paris 30

Design Example (2)

  QCIF 10fps Codec @ 30MHz   0.3µm CMOS   3 million transistors   9mm x 9mm   Three designs 1) Conventional design at 3.3V 2) 2.5V design with VTH control by VTCMOS

0.2V ± 0.05V @ active 0.5V ± 0.05V @ standby 3) Dual-VDD (2.5V, 1.75V) design in VTCMOS

MPEG-4 Video Core

(Courtesy Kuroda)

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CiEN Seminar, May 26 2011, Paris 31

Design Results

Impossible d'afficher l'image. Votre ordinateur manque peut-être de mémoire pour ouvrir l'image

Impossible d'afficher l'image. Votre ordinateur manque peut-être de mémoire pour ouvrir l'image ou l'image est endommagée. Redémarrez

Pow

er d

issi

patio

n (m

W)

100

90

80

70

60

50

40

30

20

10

0 3.3V

Conv.

Impossible d'afficher l'image. Votre ordinateur manque

Impossible d'afficher l'image. Votre ordinateur manque peut-être de mémoire pour

2.5V VTCMOS

Impossible d'afficher l'image. Votre

Impossible d'afficher l'image. Votre ordinateur manque

2.5V & 1.75V Dual-VDD&VTCMOS*

Logic F/F Clock Memory

-43%

-43%

-43%

-43%

-30%

-37%

-51%

±0%

Measured

Measured

* Additional 3 weeks in design time * <5% area increase for logic circuits

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CiEN Seminar, May 26 2011, Paris 32

Multiple Power Domains

PD1_ON

PD2_ON

PD3_ON

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CiEN Seminar, May 26 2011, Paris 33

Design Example: OMAP2420

  1 Voltage Domain   Voltage Scaling   Dual lib. Synthesis   SRAM Retention   5 Power Domains

  #1: DSP Core   #2: MCU Core   #3: Graphic Accelerator   #4: Core + Periph.   #5: Always On logic

  90-nm CMOS Tech.   ~90M transistors

(Courtesy P.Royannez, ISSCC 2005)

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CiEN Seminar, May 26 2011, Paris 34

Design Example: OMAP2420

Dual Gate length: 2X Leakage Reduction

Voltage Scaling: 2X Leakage Reduction

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CiEN Seminar, May 26 2011, Paris 35

OUTLINE

Introduction Power Components Dynamic Power Optimization Leakage Power Optimization Dynamic Power Management Conclusions

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CiEN Seminar, May 26 2011, Paris 36

Power Management Techniques

S. Lee et al, DAC, June 2000

Processor

Controller

Clock, VDD & VBB

Required speed

Software Hardware

Application

Operating System

Control Signals

Load prediction

Speed setting

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CiEN Seminar, May 26 2011, Paris 37

Dynamic Voltage Scaling (DVS)

S. Lee et al, DAC, June 2000

Processor

Controller

VDD Required speed

Software Hardware

Application

Operating System

Control Signals

Load prediction

Speed setting

Normalized workload 0.0 0.2 0.4 0.6 0.8 1.0

Nor

mal

ized

pow

er

0.0

0.2

0.4

0.6

0.8

1.0

Variable Vdd Fixed Vdd

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CiEN Seminar, May 26 2011, Paris

Dynamic Frequency Scaling (DFS)

  The critical path delay of the module is already guaranteed with the highest operating frequency,

  Lower operating frequency can be applied when the lower performance operation is executed

  power consumed in the logic part falls to about 70% when the operating frequency is lowered from 266 MHz to 66MHz

38

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CiEN Seminar, May 26 2011, Paris 39

DVFS (Dynamic V. & Freq. Scaling)

  Operating voltage: Controllable / Variable   Operating frequency: Controllable / Variable   Energy consumption: Reduced

  cf. [JSSC, Hazucga, et al. 2007]

DC/DC VDD Target

device

Ctrl.

CLK gen.

fCLK

(variable)

Power source

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CiEN Seminar, May 26 2011, Paris 40

OUTLINE

 Introduction  Power Components  Dynamic Power Optimization  Leakage Power Optimization  Dynamic Power Management  Conclusions

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CiEN Seminar, May 26 2011, Paris 41

Conclusions

!