low temperature curable positive tone photosensitive ... · 1 low temperature curable positive tone...
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Low Temperature CurablePositive Tone Photosensitive Polyimide
“Photoneece”LT series
Toray Industries, Inc.
2
Cure condition(℃×h) 170 X 1 X-section
Filmpropertie
s
Tensile strength 100Mpa
Elongation 30%
Young’s modulus 2.5GPa
Residual stress 13MPa
(THK:5um)
The features of LT series
(1) Low temperature curable ( ~170℃ )・Less damage for weak semiconductor device by its low thermal budget
(2) Extreme low residual stress (13MPa) and low shrinkage during curing (5~10%)
(3) Alkali developable (2.38%TMAH solution can be used)(4) Physical properties of LT series are same as those of conventional
photosensitive polyimide(5) Good resistance to bump or WLP process chemicals(6) Fine patterning resolution (~3um, aspect ratio is about 2)(7) Pattern profile suitable for WLP (re-wiring) process
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< Sample preparation >Pre-baking : 120℃×180sec.Exposure : 200-600mJ/cm2
(i-line stepper)Development : 30sec×2Puddles
by TMAH 2.38%Curing : 170~250℃×1h
Curing condition(℃×h) 170 X 1 200 X 1 250 X 1
Filmpropertie
s
Tensile strength 100MPa 100MPa 102MPa
Elongation 30% 20% 20%
Young’s modulus 2.5GPa 2.6GPa 2.8GPa
Residual stress 13MPa 13MPa 25MPa
The film properties and pattern profile vs curing temperature
3um
5um
3um
5um
3um
5um
170℃×1h 200℃×1h 250℃×1h
(The film thickness after curing :5μm)
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Low out gas during solder process, no pattern shape change, good chemical resistance
Heat stability (outgas)
Heat stability, chemical resistance
Heat stability(pattern profile)
200℃ cured
200℃cured 300℃ treatment in Air
Flux treatment(300℃×10min)
Heat stability+Chemical resistanceChemical resistanceNon-electric Au platingChemicals treatments
200℃cured
measured by temperature prograumed desorption MS (TPD-MS)
Curing condition Quantity of outgas(RT- 300℃)
180℃-1h
200℃-1h
250℃-1h
174ppm
89.3ppm
58.6ppm
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Si substratePV (p-SiN) 500nm
ILD-1LT (7um)
ILD-2LT (7um)Cu 4μm
Base layer (7um)
Ti barrier metal
Scribe line
UBM (non electrolytic plating) Ni/Au (3um/0.05um)
Solder bumpSolder: M705-BPS3-T5H (Sn-Ag-Cu) (Senju Metal Industry)
The curing temp. of ILD : 200℃ ( Time is 1 hour)
T/C Test (X-section)
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Die
interposer
PSPI
< Condition for Packaging >1) Flux process○Flux : WS600 (Cookson Electronics)
The peak temp. of reflow : 260℃×10sec.○Cleaner : WS-2104 (Kaken Tech)
70℃×15min○Rinser : ST-05 ((Kaken Tech)
20-23℃×30min2) The peak temp. of solder reflow : 260℃×10sec.3) Underfill : U8437-2 (Namics)
The stage temp. of injection : 70-90℃The temp. of curing : 165℃×60min
< Thermal cycle >-40~125℃(each 15min )with monitoring the resistance of daisy chain
CuDaisychain
a
b
c
d
e f h
j
ig
m k
l
① ⑭
①→a → b →c → d →e→ f → g → h→ i → j→k→l→m→⑭⇒about 14.0 Ω
Package manufacture and T/C test condition
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Result of T/C test
PSPI LT-6100 LT-6600PW-
series
Curing temp. 200 280 160 170 180 280
T / C
0 0/15 0/15 0/15 0/15 0/15 0/15
50 0/15 0/15 0/15 0/15 0/15 0/15
100 0/15 0/15 0/15 0/15 0/15 0/15
150 0/15 0/15 0/15 0/15 0/15 0/15
200 0/15 0/15 0/15 0/15 0/15 0/15
300 0/15 0/15 0/15 0/15 0/15 0/15
500 0/15 0/15 0/15 0/15 0/15 0/15
650 0/15 0/15 0/15 0/15 0/15 0/15
There is no fail(open) under 650 cycle of T/C test.
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Technical Data
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LT-6100 LT-6300 LT-6500 LT-6600
Low stresstype
Highphotosensiti
vity typeHigh Tg type
Low stressand slightly
high Tg
100 110 121 112170℃ cure % 30 30 30 30200℃ cure % 20 20 20 20250℃ cure % 20 20 20 20
2.6 2.6 3.4 2.970 61 65 60
170℃ cure MPa 13 13 21 13200℃ cure MPa 13 21 35 20250℃ cure MPa 25 23 39 26200℃ cure ℃ 382 374 393 367250℃ cure ℃ 388 380 412 371200℃ cure ℃ 160 180 232 194250℃ cure ℃ - 201 287 212
3.7 3.4 3.1 3.4>10^16 >10^16 >10^16 >10^16>10^16 >10^16 >10^16 >10^16>420 395 >420 >4201.7 1.3 1.1 1.6
Young's modulusCTE
Dielectric constantVolume resistanceSurface resistance
MPa(200℃)Tensile strength
Elogation
GPa(200℃)ppm/℃(200℃)
Residual stress
5% weight loss temp.
Breakdown voltageWater absorption
(200℃)ΩcmΩ/□
Tg (TMA)
kV/mm%(200℃)
LT-series
Film properties
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LT-6100 LT-6300 LT-6500 LT-6600
CoatPrebake
3um mJ/cm2 200 150 200 2005um mJ/cm2 300 250 300 3007um mJ/cm2 600 550 650 6009um mJ/cm2 1200 900 1400 1200
PEBDevelop
Cure
NMP rt/15minPGME rt/15min
EL rt/15minIPA rt/15min
Resiststripper
TOK106 rt/15min
25%NaOH rt/15min2.38%TMAH rt/5min
H2SO4/H2O2 rt/5min1%HF rt/5min
no changeno changeno changeno change
no changeno changeno changeno change
Not required20-120
170-250/30-120
no change
spin120/2.5
Processperformance
without HMDS℃/min
Chemicalresistance
Solvent
Alkakine
Etchant
Exposure
sec
℃/min
Photo process
LT-series
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2.03.04.05.06.07.08.09.0
10.011.012.0
0 500 1000 1500 2000 2500 3000 3500 4000Rotation speed X (rpm)
The
film
thic
knes
s ( m
m) LT-6100
LT-6300
LT-6500
LT-6600
Spin curve of LT series
< Sample preparation >Substrate : Bare SiPrebake : 120℃×180secSpin coat : Clean Track ACT8 (TEL)
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STEP Time(s) Rotation(rpm) Accel Dispense Arm2
1 1.0 0 10000 0 1 center NW home2 15.0 50 100 1 1 center NW home3 3.0 0 10000 0 1 center NW home4 1.0 400 200 0 1 center NW home5 2.0 1000 500 0 1 home NW home
6 25.0 X 10000 0 1 home NW home
7 5.0 X 10000 0 1 home NW in8 1.0 100 10000 6 1 home NW in9 10.0 1000 10000 5,6 1 home NW in10 2.0 800 10000 6 1 home NW in11 10.0 800 10000 1 home NW home12 1.0 0 10000 1 home NW home
Film thickness is controled in step 6,7.(Main speed; Xrpm)
Edge rince flow rate:10ml/min 1:PI dispenceBack rince flow rate:70ml/min 5:back rince(EBR7030)
6:edge rince(EBR7030)
Arm1
Dispence No.
Coating recipe of LT series
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Spincoat X: 3800rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :4.55 um)Exposure 150 mJ/cm2 (ghi-line Aligner) / 200 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :3.23 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :2.98um)
The patterning process of LT-6100< 3um >
< 5um >
< 7um >
< 9um>
Spincoat X: 1400rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :8.72 um)Exposure 300 mJ/cm2 (ghi-line Aligner) / 600 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :7.51 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :7.03um)
Spincoat X: 1050rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :10.88 um)Exposure 350 mJ/cm2 (ghi-line Aligner) / 1200 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :9.65 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :9.04um)
Spincoat X: 2000rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :6.53 um)Exposure 200 mJ/cm2 (ghi-line Aligner) / 300 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :5.32 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :4.98um)
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Pattern profile of LT-6100
<Sample preparation>Substrate : Bare SiPrebake : 120℃×180sec Exposure : 500mJ/cm2 (i-line stepper)Development : 30sec×2PuddleCure : 50C→110C×30min→ 170 ~250C×1h (3.5C/min)
Cure:170℃ Cure:200℃ Cure:250℃
Pattern size10um
>100um
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Spincoat X: 3600rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :4.75 um)Exposure 75 mJ/cm2 (ghi-line Aligner) / 150 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :3.20 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :2.98um)
The patterning process of LT-6300< 3um >
< 5um >
< 7um >
< 9um>
Spincoat X: 1350rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :9.02 um)Exposure 200 mJ/cm2 (ghi-line Aligner) / 550 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :7.49 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :7.04um)
Spincoat X: 1000rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :11.16 um)Exposure 300 mJ/cm2 (ghi-line Aligner) / 900 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :9.65 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :8.91um)
Spincoat X: 2000rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :6.87 um)Exposure 100 mJ/cm2 (ghi-line Aligner) / 250 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :5.36 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :5.00um)
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Pattern profile of LT-6300
<Sample preparation>Substrate : Bare SiPrebake : 120℃×180sec Exposure : 500mJ/cm2 (i-line stepper)Development : 30sec×2PuddleCure : 50C→110C×30min→ 170 ~250C×1h (3.5C/min)
Cure:170℃ Cure:200℃ Cure:250℃
Pattern size10um
>100um
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Spincoat X: 3600rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :4.91 um)Exposure 75 mJ/cm2 (ghi-line Aligner) / 200 mJ/cm2 (i-Line stepper)Development 45 sec.×2 Puddle development (Thickness after development :3.22 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :3.00um)
The patterning process of LT-6500< 3um >
< 5um >
< 7um >
< 9um>
Spincoat X: 1400rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :9.17 um)Exposure 250 mJ/cm2 (ghi-line Aligner) / 650 mJ/cm2 (i-Line stepper)Development 45 sec.×2 Puddle development (Thickness after development :7.41 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :6.95um)
Spincoat X: 1000rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :11.33 um)Exposure 400 mJ/cm2 (ghi-line Aligner) / 1400 mJ/cm2 (i-Line stepper)Development 45 sec.×2 Puddle development (Thickness after development :9.66 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :9.02um)
Spincoat X: 2000rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :7.12 um)Exposure 100 mJ/cm2 (ghi-line Aligner) / 300 mJ/cm2 (i-Line stepper)Development 45 sec.×2 Puddle development (Thickness after development :5.42 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :5.08um)
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Pattern profile of LT-6500
<Sample preparation>Substrate : Bare SiPrebake : 120℃×180sec Exposure : 500mJ/cm2 (i-line stepper)Development : 45sec×2PuddleCure : 50C→110C×30min→ 170 ~250C×1h (3.5C/min)
Cure:170℃ Cure:200℃ Cure:250℃
Pattern size10um
>100um
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Spincoat X: 3800rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :4.35 um)Exposure 75 mJ/cm2 (ghi-line Aligner) / 200 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :3.20 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :2.97um)
The patterning process of LT-6600< 3um >
< 5um >
< 7um >
< 9um>
Spincoat X: 1500rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :8.66 um)Exposure 200 mJ/cm2 (ghi-line Aligner) / 600 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :7.52 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :6.98um)
Spincoat X: 1100rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :10.88 um)Exposure 350 mJ/cm2 (ghi-line Aligner) / 1200 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :9.72 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :9.03um)
Spincoat X: 2000rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :6.50 um)Exposure 100 mJ/cm2 (ghi-line Aligner) / 300 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :5.34 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :4.96um)
20
Pattern profile of LT-6600
<Sample preparation>Substrate : Bare SiPrebake : 120℃×180sec Exposure : 500mJ/cm2 (i-line stepper)Development : 30sec×2PuddleCure : 50C→110C×30min→ 170 ~250C×1h (3.5C/min)
Cure:170℃ Cure:200℃ Cure:250℃
Pattern size10um
>100um
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< Test condition >
Equipment : Shear tester “series 4000” Load cell : BS250Test speed : 100um/sec.Height of rod from substrate : 5um
< Test condition >
The adhesion strength test between PSPI and Substrate
SubSubPSPI
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Cure Temp\Substrate Cu SiO SiN Si
200℃ 76.1 68.2 72.5 83.5
210℃ 69.9 60.8 73.2 65.5
230℃ 82.1 77.1 69.9 69.3
250℃ 81.0 60.7 80.9 78.1
LT6100 adhesion strength
(MPa)
LT6100
0102030405060708090
100
Cu SiO SiN Si
Adhesi
on s
tren
gth
(M
Pa)
200℃
210℃
230℃
250℃
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Cure Temp\Substrate Cu SiO SiN Si
200℃ 74.4 76.9 92.7 71.3
210℃ 81.2 95.0 83.1 70.5
230℃ 82.3 87.5 82.6 79.5
250℃ 87.3 88.6 94.1 76.1
LT6300
0102030405060708090
100
Cu SiO SiN Si
Adhesi
on
stre
ngt
h
(M
Pa)
200℃
210℃
230℃
250℃
LT6300 adhesion strength
(MPa)
24
Cure Temp\Substrate Cu SiO SiN Si
200℃ 50.0 71.7 58.7 74.7
210℃ 46.8 82.8 70.0 69.0
230℃ 42.7 83.2 61.8 84.0
250℃ 52.1 74.1 77.0 73.4
(MPa)
LT6500
0102030405060708090
100
Cu SiO SiN Si
Adh
esio
n s
tren
gth
(M
Pa)
200℃
210℃
230℃
250℃
LT6500 adhesion strength
25
Cure Temp\Substrate Cu SiO SiN Si
200℃ 60.4 73.5 61.4 62.7
210℃ 62.5 68.8 70.5 63.3
230℃ 64.5 75.7 78.8 66.7
250℃ 83.3 79.7 77.2 76.8
(MPa)
LT6600
0102030405060708090
100
Cu SiO SiN Si
Adhesi
on s
trengt
h
(M
Pa)
200℃
210℃
230℃
250℃
LT6600 adhesion strength
26