low temperature growth and optical properties of zinc oxide nanostructure prepared by two-step...
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Low Temperature Growth and Optical Properties of Zinc Oxide Nanostructure Prepared by Two-step Solution-based Deposition Method
A.N. Afaah1,2,a, N.A.M. Asib1,2,b, A. Aadila1,2,c, M. Rusop 1,3,d, R. Mohamed2,4,e, Z. Khusaimi1,2,f
1NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia
2Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia
3NANO-Electronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor, Malaysia
4Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM) Pahang, 26400 Bandar Pusat Jengka, Pahang, Malaysia
[email protected], b [email protected], [email protected] [email protected], [email protected], [email protected]
Keywords: ZnO nanostructures, mist-atomization, solution-immersion, Raman, PL
Abstract. ZnO thin films with typical c-axis (0 0 2) orientation were successfully deposited on
glass substrates by two-step deposition method; mist-atomization and solution-immersion. The
samples were annealed at selected temperature range of 350-500 ᵒC. The prepared samples then
analyzed by Raman spectroscopy and photoluminescence (PL) spectroscopy. The optical properties
of the samples were studied. The results of different annealing temperatures are also compared to
investigate the optical and physical properties of each sample. Photoluminescence (PL) spectra
showed low intensity in UV emission and high intensity in the visible emission, which indicates a
good surface morphology of the ZnO nanorod. The Raman intensity changes in all sample were also
tested.
Introduction
Zinc oxide is one of the most studied oxide semiconductors due to chemical and thermal stability
n-type semiconductor with bandgap energy of 3.37 eV and large exciton binding energy of 60 meV
at room temperature. Recently, nanostructured ZnO materials have received extensive interest due
to their distinguished performance in electronics, photonics and optics. It is a versatile functional
material that has a diverse group of growth morphologies, such as nanowires [1], nanorods [2],
nanoflakes [3] etc. Several methods such as hydrothermal [2, 4], thermal evaporation [3], sol-gel
[5], sol-gel spin coating [6], RF magnetron sputtering [7] chemical vapor and condensation [8],
pulsed laser deposition etc have been reported for the fabrication of ZnO nanostructures. However,
these processes involve elevated temperatures of 450-900 °C.
In contrast, solution-based method is more convenient over other methods as it is less expensive
with easier composition control, large deposition area, and the most importantly can be carried out
at relatively lower temperatures. The present work is a challenge to address the problems of
elevated operating temperature and high energy consumption with environmentally friendly
methods. In this paper, we focus on the synthesis of flower-like ZnO from zinc salts in solution. We
concentrate on the two-step deposition method; mist-atomizer and solution immersion method. The
optical properties of as-prepared samples are studied.
Advanced Materials Research Vol. 832 (2014) pp 749-753
Online available since 2013/Nov/21 at www.scientific.net© (2014) Trans Tech Publications, Switzerlanddoi:10.4028/www.scientific.net/AMR.832.749
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Experimental Details
Materials. The materials used in this work is zinc nitrate hexahydrate (Zn(NO3)2.6H2O) and
stabilizer, hexamethylenetetramine (HMTA, C6H12N4). Gold (Au) target is used as the seeded
catalyst of the substrate.
Synthesis. Six nanometer (6 nm) thick gold (Au) was coated on the glass substrates. 6 nm said to be
the most optimized thickness in synthesizing crystalline ZnO nanostructures [9]. For the preparation
of Zn2+
solution, (Zn(NO3)2.6H2O) was dissolved in deionised water. The solution stirred to make
sure it is homogenous. Then, of HMTA solution is added to the Zn2+
solution. Deionised water was
added to the mixture to ensure the total volume was 250 mL. The mixture was then stirred and
heated at 60 ᵒC for an hour. Then, the solution was aged for another 24 hours.
After ageing process, the solution now ready to be used for the first-deposition method; mist-
atomization method. The Au-seeded glass substrates were placed on hot plate placed in the mist-
atomizer chamber (Fig. 1). The substrates are preheated at 250 ᵒC for 10 minutes. Then, the ZnO
solution was sprayed onto the glass substrates and left for 6 hours to make sure all the ZnO mists
settled onto the substrates.
Fig. 1, Mist-atomizer chamber
Then, the substrates undergo second deposition method; solution-immersion method. The
solution preparation for this method is the same as prepared for the first deposition method. The
substrates were placed in boiling tubes and 30 mL ZnO solution was poured into the boiling tubes.
The boiling tubes needed to be sealed tightly for the formation of good crystalline ZnO
nanostructures. Each sample was immersed in 90 ᵒC water bath for 4 hours. The substrates then
rinsed with deionised water to remove any organic salts and contamination. The glass substrates
were annealed at different annealing temperatures of 350, 400, 450 and 500 ᵒC. The samples were
then compared to an un-annealed substrate.
Characterization. The prepared samples were analyzed by Raman spectroscopy and PL
measurement (Horiba Jobin Yvon).
Results and Discussions
Raman studies. The crystallinity and structure of the deposited ZnO was defined by Raman
spectroscopy. As a fact, ZnO has three acoustic phonon branches. It consists of two transverse and
one longitudinal. The group theory of A1+2B1+E1+2E2 predicted the Raman active zone-centre
optical phonons of wurtzite ZnO, where the A1, E1 and 2E2 modes are Raman active while the B1
modes are forbidden modes. The phonons of A1 and E1 symmetries are polar phonons. Therefore,
they demonstrate different frequencies for transverse optical (TO) and longitudinal optical (LO)
phonons.
ZnO solution inlet Argon gas inlet
750 Nanoscience, Nanotechnology and Nanoengineering
The Raman spectrum of ZnO nanorod is shown in Fig. 2. A dominated and strong intensity peak
at 435 cm-1
corresponds to the E2 (high) mode of the non-polar optical phonons [10]. Generally, the
phonons of E2 symmetry have two frequencies E2 (high) and E2 (low). E2 (high) is related with the
oxygen atom and E2 (low) related with the Zn sub lattice [10, 11].
The peak at 333 cm-1
is attributed to the 2E2 mode. The broad peak at 584 cm-1
may corresponds
to the polar transverse optical (TO) A1 and longitudinal E1 optical (LO) phonon mode [11].
Fig. 2, Raman spectrum of ZnO nanorods annealed at (a) un-annealed, (b) 350 ᵒC, (c) 400 ᵒC, (d)
450 ᵒC, and (e) 500 ᵒC
PL studies. The room temperature PL spectrum of the sample is shown in Fig. 3. The PL spectrum
shows a bandgap emission along with a broad and intense emission in the green-yellow region. The
UV emission peak is around 405 nm and the green-yellow peak centered at 653 nm. The UV
emission is said to be attributed to recombination of free excitons, which is near band-edge
emission [12].
According to B. Mari et. al, these defects are commonly interrelated to singly ionized oxygen
vacancies [13]. They suggested the defect-state luminescence at the visible emission made the peak
broader. This is the proof of the presence of structural defects or electron acceptor defects such as
Zn vacancy or O interstitials in the samples which is in a good agreement with the Raman results as
discussed before.
0 300 600 900
Raman shift (cm-1)
(e)
(d)
(c)
(b)
(a)
Advanced Materials Research Vol. 832 751
Fig. 3, The room temperature PL spectra of ZnO nanorod annealed at 400 ᵒC
Conclusion
ZnO nanorods with hexagonal structure were successfully synthesized by mist-atomiser and
solution-immersion technique. Raman measurement confirms that the samples produced have good
crystallinity with hexagonal wurtzite phase. The intense and broad photoluminescence is because of
the presence of structural defects or high oxygen deficiency in the ZnO nanorod. The result
obtained from PL measurements is in a good agreement to Raman results.
Acknowledgement
The author would like to acknowledge Universiti Teknologi MARA (UiTM) for the funding
through the project 600-RMI/FRGS 5/3 (18/2012).
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Advanced Materials Research Vol. 832 753
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DOI References
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and Actuators B. 161 (2012) 923- 928.
http://dx.doi.org/10.1016/j.snb.2011.11.063