lt3587 - high voltage monolithic inverter and dual boost · cap1 bias current vcap1 = 15v, vout1 =...

24
LT3587 1 3587fc TYPICAL APPLICATION FEATURES APPLICATIONS DESCRIPTION High Voltage Monolithic Inverter and Dual Boost The LT ® 3587 provides a one chip solution for applications requiring two positive and one negative high voltage sup- plies. The LT3587 input voltage range of 2.5V to 6V makes it ideal for various battery-powered systems. A single resistor programs each of the three output voltage levels and the output current of Boost3. The intelligent soft- start allows for sequential soft-start of the Boost1 output followed by the negative output with a single capacitor. Internal sequencing circuitry also disables the inverter until the Boost1 output has reached 87% of its final value. The LT3587 integrates all the power switches, soft-start, and output-disconnect circuits into a small 3mm × 3mm QFN package. This high level of integration combined with small external components makes the LT3587 ideal for space constrained applications. L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Li-Ion Powered Supply for CCD Imager and Six White Backlight LEDs n Ideal for CCD, LCD, LED Backlight and OLED Applications n Easy Generation of 15V (50mA), –8V (100mA) and 20V (20mA) from a Li-Ion Cell n V VIN Range: 2.5V to 6V n Wide Output Ranges: Up to 32V for the Boosts and Up to –32V for the Inverter n Output Disconnect for the Boost Channels n Boost3 Allows Voltage Programming and/or Current Programming for a ‘One Wire Current Source’ n Overload Fault Protection with Fault I/O Pin Indicator n Combined Soft-Start and Enable Pins n Small 20-Pin 3mm × 3mm QFN Package n Digital Still and Video Cameras n Scanner and Display Systems n PDA, Cellular Phones and Handheld Computers n LED Backlight and OLED Display Drivers n CCD Imager Bias n General High Voltage Supply Bias Efficiency Curve 15μH 10μH 3587 TA01a V OUT3 CAP3 V FB3 I FB3 SW2 FB2 GND CAP1 FB1 V OUT1 LT3587 FLT EN/SS1 EN/SS3 SW3 SW1 V IN 10μF V VIN 2.5V TO 6V 2.2μF 15μH 15μH CCD POSITIVE 15V, 50mA CCD NEGATIVE –8V, 100mA 8.06k 1μF LED DRIVER 20mA, UP TO 6 LEDS 2.2μF 1M 1M 22μF V VIN 2.5V TO 6V 2.7pF 6.8pF NORMALIZED CURRENT 0 EFFICIENCY (%) POWER DISSIPATION (mW) 90 85 75 65 55 80 70 60 50 800 700 500 300 100 600 400 200 0 1 3587 TA01b 1.5 0.5 CDD + = 50mA CDD = 100mA LED = 20mA CDD + CDD LED ALL CHANNELS ENABLED POWER DISSIPATION ALL CHANNELS ENABLED

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Page 1: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

13587fc

TYPICAL APPLICATION

FEATURES

APPLICATIONS

DESCRIPTION

High Voltage Monolithic Inverter and Dual Boost

The LT®3587 provides a one chip solution for applications requiring two positive and one negative high voltage sup-plies. The LT3587 input voltage range of 2.5V to 6V makes it ideal for various battery-powered systems.

A single resistor programs each of the three output voltage levels and the output current of Boost3. The intelligent soft-start allows for sequential soft-start of the Boost1 output followed by the negative output with a single capacitor. Internal sequencing circuitry also disables the inverter until the Boost1 output has reached 87% of its fi nal value.

The LT3587 integrates all the power switches, soft-start, and output-disconnect circuits into a small 3mm × 3mm QFN package. This high level of integration combined with small external components makes the LT3587 ideal for space constrained applications.L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.All other trademarks are the property of their respective owners.

Li-Ion Powered Supply for CCD Imager and Six White Backlight LEDs

n Ideal for CCD, LCD, LED Backlight and OLED Applications

n Easy Generation of 15V (50mA), –8V (100mA) and 20V (20mA) from a Li-Ion Celln VVIN Range: 2.5V to 6Vn Wide Output Ranges: Up to 32V for the Boosts and

Up to –32V for the Invertern Output Disconnect for the Boost Channelsn Boost3 Allows Voltage Programming and/or Current

Programming for a ‘One Wire Current Source’n Overload Fault Protection with Fault I/O Pin Indicatorn Combined Soft-Start and Enable Pinsn Small 20-Pin 3mm × 3mm QFN Package

n Digital Still and Video Camerasn Scanner and Display Systemsn PDA, Cellular Phones and Handheld Computersn LED Backlight and OLED Display Driversn CCD Imager Biasn General High Voltage Supply Bias

Effi ciency Curve15μH10μH

3587 TA01a

VOUT3

CAP3

VFB3

IFB3

SW2 FB2

GND

CAP1

FB1

VOUT1

LT3587

FLT

EN/SS1

EN/SS3

SW3 SW1VIN10μF

VVIN2.5V TO 6V

2.2μF15μH 15μH

CCD POSITIVE15V, 50mA

CCD NEGATIVE–8V, 100mA

8.06k

1μF

LED DRIVER20mA, UP TO 6 LEDS

2.2μF

1M

1M

22μF

VVIN2.5V TO 6V

2.7pF

6.8pF

NORMALIZED CURRENT

0

EFF

ICIE

NC

Y (

%)

PO

WER

DIS

SIP

ATIO

N (m

W)

90

85

75

65

55

80

70

60

50

800

700

500

300

100

600

400

200

01

3587 TA01b

1.50.5

CDD+ = 50mACDD– = 100mALED = 20mA

CDD+

CDD–

LED

ALL CHANNELSENABLED

POWER DISSIPATIONALL CHANNELS

ENABLED

Page 2: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

23587fc

ABSOLUTE MAXIMUM RATINGS

VIN ..............................................................................6VSoft-Start Input Pins

EN/SS1, EN/SS3 .....................................................6VFeedback Pins

FB1, FB2, IFB3, VFB3 ................................. –0.2V to 6VHigh Voltage Switch Pins

SW1, SW2, SW3 ...................................................40VHigh Voltage Output Pins

CAP1, CAP3, VOUT1, VOUT3 ...................................32VBidirectional I/O Pin

FLT ..........................................................................6VFLT Current ........................................................10mA

Operating Junction Temperature Range .. –40°C to 125°C Storage Temperature Range ................... –65°C to 125°C

(Note 1)

20 19 18 17 16

7 8

TOP VIEW

21

UD PACKAGE20-LEAD (3mm 3mm) PLASTIC QFN

9 10

VOUT3

CAP3

SW3

GND

FLT

FB1

VOUT1

CAP1

GND

SW1

VFB

3

I FB

3

EN

/SS

3

VIN

EN

/SS

1

FB2

GN

D

GN

D

SW

2

NC

12

11

13

14

15

4

5

3

2

1

6

θJA = 68°C/W, θJC = 4.2°C/W EXPOSED PAD (PIN 21) IS GND, MUST BE SOLDERED TO PCB

PARAMETER CONDITIONS MIN TYP MAX UNITS

Operating Input Voltage Range 2.5 6 V

Quiescent Current VEN/SS1 = 0V, VEN/SS3 = VVIN ORVEN/SS1 = VVIN, VEN/SS3 = 0V ORVEN/SS1 = VEN/SS3 = VVINNot Switching

2.4 4 mA

VEN/SS1 = VEN/SS3 = 0V, In Shutdown 5.5 9 μA

Switching Frequency l 0.8 1 1.2 MHz

Maximum Duty Cycle l 87 93 %

Minimum On Time 50 70 ns

Power Fault Delay from Any Output to FLT 16 ms

FLT Input Threshold Low l 0.4 1.0 1.6 V

FLT Leakage Current VFLT = 5V l ±1 μA

FLT Voltage Output Low IFLT = 1mA l 0.4 V

ORDER INFORMATIONLEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE

LT3587EUD#PBF LT3587EUD#TRPBF LDNC 20-Lead (3mm × 3mm) Plastic QFN –40°C to 125°C

Consult LTC Marketing for parts specifi ed with wider operating temperature ranges.

Consult LTC Marketing for information on non-standard lead based fi nish parts.

For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifi cations, go to: http://www.linear.com/tapeandreel/

PIN CONFIGURATION

ELECTRICAL CHARACTERISTICS The l denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VVIN = 3.6V, VEN/SS1 = VEN/SS3 = VVIN unless otherwise noted (Note 2, 3).

Page 3: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

33587fc

ELECTRICAL CHARACTERISTICS The l denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VVIN = 3.6V, VEN/SS1 = VEN/SS3 = VVIN unless otherwise noted (Note 2, 3).

PARAMETER CONDITIONS MIN TYP MAX UNITS

Boost1

CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA

FB1 Reference Voltage l 1.19 1.22 1.25 V

VOUT1 Output Voltage RFB1 = 1MΩ l 14.25 15 15.75 V

SW1 Current Limit 800 990 mA

SW1 VCESAT ISW1 = 400mA 200 mV

SW1 Leakage Current VSW1 = 15V 0.1 5 μA

EN/SS1 for Full Inductor Current VFB1 = 1.1V, VFB2 = 0.1V 2.5 V

EN/SS1 Shutdown Voltage Threshold l 0.2 V

EN/SS1 Pin Bias Current VEN/SS1 = 0V –0.5 –1 –1.5 μA

VOUT1 Current Limit VCAP1 = 15V 100 155 mA

CAP1 to VOUT1 On-Resistance (RDISC1) VCAP1 = 15V, IVOUT1= 50mA 5 8 Ω

VOUT1 Disconnect Leakage VVIN = VCAP1 = 6V, VVOUT1 = 0V 0.1 1 μA

Inverter

FB2 Reference Voltage l –10 5 20 mV

Output Voltage RFB2 = 1MΩ l –7.5 –8 –8.5 V

SW2 Current Limit 900 1090 mA

SW2 VCESAT ISW2 = 600mA 250 mV

SW2 Leakage Current VSW2 = 15V 0.1 5 μA

FB1 Threshold to Start Negative Channel Percent of Final Regulation Value 87 90 %

Boost3

CAP3 Bias Current VCAP3 = 15V, VOUT3 = Open 70 150 μA

Boost3 Programmed Current RIFB3 = 8.06kΩ l 18 20 22 mA

VFB3 Reference Voltage RVFB3 = 1MΩ, IVOUT3 = 20mA l 0.77 0.8 0.83 V

VOUT3 Output Voltage RVFB3 = 1MΩ, IVOUT3 = 20mA l 14 15 16 V

SW3 Current Limit 400 480 mA

SW3 VCESAT ISW3 = 200mA 250 mV

SW3 Leakage Current VSW3 = 15V 0.1 5 μA

EN/SS3 for Full Inductor Current VVFB3 = VIFB3 = 0.6V 2 V

EN/SS3 Shutdown Voltage Threshold l 0.2 V

EN/SS3 Pin Bias Current VEN/SS3 = 0V –0.5 –1 –1.5 μA

VOUT3 Current Limit VCAP3 = 15V, VIFB3 = 0V 70 110 mA

CAP3 to VOUT3 On Resistance (RDISC3) VCAP3 = 15V, IVOUT3 = 20mA 10 15 Ω

VOUT3 Disconnect Leakage VVIN = VCAP3 = 6V, VVOUT3 = 0V 0.1 1 μA

CAP3 Pin Overvoltage Clamp 27 29 31 V

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: All currents into pins are positive; all voltages are referenced to

GND unless otherwise noted.

Note 3: The LT3587 is guaranteed to meet specifi ed performance from

0°C to 125°C. Specifi cations over the –40°C to 125°C operating range are

assured by design, characterization and correlation with statistical process

controls.

Page 4: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

43587fc

TYPICAL PERFORMANCE CHARACTERISTICS

Shutdown Quiescent Currentvs Input Supply Voltage

Quiescent Current When On But Not Switching vs Input Supply Voltage VIN UVLO Voltage vs Temperature

FB1, VFB3 and IFB3 Regulation Voltage vs Temperature

FB2 Regulation Voltage vs Temperature

FB1, VFB3, IFB3 Bias Current in Regulation vs Temperature

Specifi cations are at TA = 25°C unless otherwise noted.

FB2 Bias Current in Regulation vs Temperature

INPUT VOLTAGE (V)

2.5

QU

IES

CEN

T C

UR

REN

T (

μA

)

10

8

6

4

243.5 5

3587 G01

65.53 4.5

125°C

90°C

25°C

–40°C

VVIN = 3.6VEN/SS1 = EN/SS3 = 0V

INPUT VOLTAGE (V)

2.5

QU

IES

CEN

T C

UR

REN

T (

mA

)

3.5

3.0

2.5

2.0

1.543.5 5

3587 G02

65.53 4.5

125°C

90°C

25°C

–40°C

VVIN = EN/SS1 = EN/SS3 = 3.6VFB1 = VFB3 = 1.5VFB2 = IFB3 = 0V

TEMPERATURE (°C)

–50

UV

LO

VO

LTA

GE (

V)

2.20

2.15

2.10

2.05

2.00250 75

3587 G03

125100–25 50

TEMPERATURE (°C)

–50

REG

ULA

TIO

N V

OLT

AG

E (

V)

VIFB

3 , VV

FB3 R

EG

ULA

TIO

N V

OLTA

GE (V

)

1.240

1.230

1.220

1.210

1.200

0.825

0.813

0.800

0.788

0.775250 75

3587 G04

125100–25 50

VFB3

VIFB3

FB1

VVIN = 3.6VRFB1 = RVFB3 = 1MΩRIFB3 = 8.06kΩIVOUT1 = 50mAIVOUT3 = 20mA

TEMPERATURE (°C)

–50

FB2 R

EG

ULA

TIO

N V

OLT

AG

E (

mV

)15

10

5

0

–5

–10250 75

3587 G05

125100–25 50

VVIN = 3.6VRFB2 = 1MΩIVNEG = 100mA

TEMPERATURE (°C)

–50

BIA

S C

UR

REN

T (

μA

)

IFB3 B

IAS

CU

RR

EN

T (μ

A)

14.50

14.25

14.00

13.50

13.75

13.25

13.00

106

104

102

98

100

96

94250 75

3587 G06

125100–25 50

VVIN = 3.6VRFB1 = RVFB3 =1MΩRIFB3 =8.06kΩIVOUT1 = 50mAIVOUT3 = 20mA

IVFB3

IFB1

IIFB3

TEMPERATURE (°C)

–50

FB2 B

IAS

CU

RR

EN

T (

μA

)

–7.75

–7.85

–7.95

–8.15

–8.05

–8.25250 75

3587 G07

125100–25 50

VVIN = 3.6VRFB2 =1MΩIVNEG = 100mA

Page 5: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

53587fc

TYPICAL PERFORMANCE CHARACTERISTICS

Switching Frequency vs Temperature Switches VCESAT vs Current

Switches Current Limit vs Temperature

Specifi cations are at TA = 25°C unless otherwise noted.

SW1 and SW2 Current Limit vs EN/SS1 Voltage

TEMPERATURE (°C)

–50

FREQ

UEN

CY

(M

Hz)

1.20

1.10

1.00

0.90

0.80250 75

3587 G08

125100–25 50

VVIN = 3.6V

SW CURRENT (A)

0

VC

ES

AT (

V)

0.5

0.4

0.3

0.2

0.1

00.40.2 0.8

3587 G09

1.210.6

VVIN = 3.6V

SW1SW2

SW3

TEMPERATURE (°C)

–50

CU

RR

EN

T L

IMIT

(A

)

1.2

1.0

0.4

0.6

0.8

0.2

0250 75

3587 G10

125100–25 50

VVIN = 3.6VDUTY CYCLE = 60%

SW1SW2

SW3

DUTY CYCLE (%)

0

CU

RR

EN

T L

IMIT

(A

)

2.5

2.0

1.0

1.5

0.5

060504020 30 80

3587 G11

1009010 70

VVIN = 3.6V

SW1

SW2

SW3

EN/SS1 VOLTAGE (V)

0.5

CU

RR

EN

T L

IMIT

(A

)

1.6

1.2

0.4

0.8

01.71.51.30.9 1.1 2.1

3587 G12

2.52.30.7 1.9

VVIN = 3.6VDUTY CYCLE = 60%

SW1

SW2

Switches Current Limit vs Duty Cycle

SW3 Current Limit vs EN/SS3 Voltage

EN/SS3 VOLTAGE (V)

0.5

CU

RR

EN

T L

IMIT

(A

)

0.5

0.4

0.2

0.1

0.3

01.71.51.30.9 1.1 2.1

3587 G13

2.52.30.7 1.9

VVIN = 3.6V

SW3

EN/SS1, EN/SS3 Pull-Up Current In Shutdown vs Temperature

TEMPERATURE (°C)

–50

PU

LL-U

P C

UR

REN

T (

μA

)

1.50

1.25

0.75

1.00

0.50250 75

3587 G16

125100–25 50

VVIN = 3.6VEN/SS1 = EN/SS3 = 0V

Output Disconnects On Resistancevs Temperature (RDISC1, RDISC3)

Output Disconnects Current Limitvs Temperature

TEMPERATURE (°C)

–50

ON

RES

ISTA

NC

E (

Ω)

14

12

6

8

10

4

2250 75

3587 G14

125100–25 50

VVIN = 3.6VIVOUT1 = 50mAIVOUT3 = 20mA

RDISC1

RDISC3

TEMPERATURE (°C)

–50

OU

TP

UT D

ISC

ON

NEC

TS

CU

RR

EN

T L

IMIT

(m

A) 200.0

167.5

102.5

135.0

70250 75

3587 G15

125100–25 50

VVIN = 3.6VVVOUT1 = VVOUT3 = 15V

IVOUT1

IVOUT3

Page 6: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

63587fc

VOUT3 (Pin 1): Boost3 Output Pin. This pin is the drain of an output disconnect PMOS transistor.

CAP3 (Pin 2): Boost3 Output Capacitor Pin. This pin is the source of an output PMOS disconnect. Connect a capacitor from this pin to ground.

SW3 (Pin 3): Boost3 Switch Pin. Connect an inductor from this pin to VIN. Minimize trace area at this pin to minimize EMI.

GND (Pin 4, 7, 8, 12): Ground Pins.

FLT (Pin 5): Fault Pin. This pin is a bidirectional open-drain pull-down pin. This pin pulls low when any of the enabled outputs fall out of regulation for more than 16ms. Each output is ignored during start-up until its respective enable/soft-start pin allows for full inductor current. This pin can also be externally forced low to disable all the supply outputs. Once this pin goes low (either due to an out of regulation condition or externally forced low), the pin latches low until the inputs to EN/SS1 and EN/SS3 are set low or the input supply pin is recycled. Pull up this pin to VIN with a 200k resistor when not used.

FB2 (Pin 6): Inverter Output Voltage Feedback Pin. Con-nect a resistor RFB2 from this pin to the Inverter Output (VNEG) such that:

RFB2 = |VNEG|/8μA

Note that FB2 pin voltage is about 0V when in regulation. There is an internal 153k resistor from the FB2 pin to the internal reference.

SW2 (Pin 9): Inverter Switch Pin. Connect an inductor between this pin and VIN, as well as the fl ying capacitor from this pin to the anode of the lnverter ground return diode. Minimize trace area at this pin to minimize EMI.

NC (Pin 10): No Connect Pin. Leave open or connect to ground.

SW1 (Pin 11): Boost1 Switch Pin. Connect an inductor from this pin to VIN. Minimize trace area at this pin to minimize EMI.

CAP1 (Pin 13): Boost1 Output Capacitor Pin. This pin is the source of an output PMOS disconnect. Connect a capacitor from this pin to ground.

EN/SS1, EN/SS3 Shutdown Threshold vs Temperature

CAP3 Overvoltage Clamp vs Temperature

TYPICAL PERFORMANCE CHARACTERISTICS Specifi cations are at TA = 25°C unless otherwise noted.

PIN FUNCTIONS

TEMPERATURE (°C)

–50

SH

UTD

OW

N T

HR

ES

HO

LD

VO

LTA

GE (

V)

0.45

0.40

0.25

0.35

0.30

0.20250 75

3587 G17

125100–25 50

VVIN = 3.6V

TEMPERATURE (°C)

–50

CA

P3 O

V C

LA

MP

VO

LTA

GE (

V)

31

30

29

28

27250 75

3587 G18

125100–25 50

VVIN = 3.6V

Page 7: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

73587fc

PIN FUNCTIONSVOUT1 (Pin 14): Boost1 Output Pin. This pin is the drain of an output disconnect PMOS transistor.

FB1 (Pin 15): Boost1 Output Voltage Feedback Pin. Con-nect a resistor RFB1 from this pin to VOUT1 (or CAP1) such that:

RFB1 = ((VVOUT1/1.22V) – 1) • 88.5k

There is an internal 88.5k resistor from the FB1 pin to ground.

EN/SS1 (Pin 16): Boost1/Inverter Shutdown and Soft-Start Pin. Boost1 and Inverter are enabled when the voltage on this pin is greater than 2.5V. They are disabled when the voltage is below 0.2V. An internal 1μA current source in conjunction with an external capacitor can be used to ramp this pin and provide soft-start.

VIN (Pin 17): Input Supply Pin. Must be locally bypassed with an X5R or X7R type ceramic capacitor.

EN/SS3 (Pin 18): Boost3 Shutdown and Soft-Start Pin. Boost3 is enabled when the voltage on this pin is greater than 2V. It is disabled when the voltage is below 0.2V. An internal 1μA current source in conjunction with an exter-nal capacitor can be used to ramp this pin and provide soft-start.

IFB3 (Pin 19): Boost3 Output Current Programming Pin. Connect a resistor RIFB3 from this pin to ground such that:

RIFB3 = 200 • (0.8V/IVOUT3)

If Boost3 output is confi gured as a voltage regulator, RIFB3 can be optionally used to limit the maximum output current to ILIMIT:

RIFB3 = 200 • (0.8V/ILIMIT)

Note: Tie IFB3 to GND when no current limit is desired.

VFB3 (Pin 20): Boost3 Output Voltage Feedback Pin. Con-nect a resistor RVFB3 from this pin to VOUT3 (or CAP3) such that:

RVFB3 = ((VVOUT3/0.8V) – 1) • 56.3k

There is an internal 56.3k resistor from the VFB3 pin to ground. In the current regulator confi guration, RVFB3 can be optionally used to limit the maximum output voltage to VCLAMP, such that:

RVFB3 = ((VCLAMP/0.8V) – 1) • 56.3k

Note: When no voltage clamp is desired in the current regulator confi guration, tie VFB3 to GND.

Exposed Pad (Pin 21): Ground Pin. Connect to PCB ground plane. Ground plane connection through multiple vias under the package is recommended for optimum electrical and thermal performance.

Page 8: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

83587fc

BLOCK DIAGRAM

Figure 1. Block Diagram

3587 F01

+–

+

+

+

ΣΣ

Σ

+

VC1VC2VC3

FILTERAND16ms

DELAY

+

+

RQS

DISCONNECTCONTROL

RAMPGENERATOR

SEQUENCING

R Q Q1S

R QS

Σ

+

RAMPGENERATOR

R QS

C5

C6

VOUT3

VOUT1

VFB3

FB1

EN/SS1

FB2

GND

RVFB3

RFB1

RFB2

EN/SS3

VIN

1μA

A5

A8VREF0.8V

FLT

56.3k

88.5k

SOFT-START

200mV VC3

A6 Q3

RAMPGENERATOR

M2 M3

SW3

CAP3

VOUT3

VOUT1

IFB3

FLT

SW1

SW2

CAP1

L4

DS3

L1

C1

DS1

C4

RIFB3 100k

C2

L2

L3

C7

VIN

VIN

VIN

VIN

VNEG

Q2A4

X2A2VC2

PTAT BIAS

BANDGAPAND LDO

OSCILLATOR

EN/SS1

EN/SS3

EN/SS3

EN/SS1

FLT

OVERVOLTAGEPROTECTION

DISCONNECTCONTROL

SHDN3

VMAX

A7VREF1.22V

VIN1μA

200mV

FLT

VIN

A1

SOFT-START

153k

VC1X1

X3

A3

C3

VNEG

SHDN1

M1

DS2

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LT3587

93587fc

OPERATIONAll three channels of the LT3587 use a constant frequency, current mode control scheme to provide voltage and/or current regulation at the output. Operation can be best un-derstood by referring to the Block Diagram in Figure 1.

If EN/SS1 is pulled higher than 200mV, the bandgap refer-ence, the start-up bias and the oscillator are turned on. At the start of each oscillator cycle, the SR latch X1 is set, which turns on the power switch Q1. A voltage proportional to the switch current is added to a stabilizing ramp and the resulting sum is fed into the positive terminal of the PWM comparator A3. When this voltage exceeds the level at the negative input of A3, the SR latch X1 is reset, turning off the power switch Q1. The level at the negative input of A3 is set by the error amplifi er A1, which is simply an amplifi ed version of the difference between the reference voltage of 1.22V and the feedback voltage. In this manner, the error amplifi er sets the correct peak switch current level to keep the output voltage in regulation. If the error amplifi er output increases, more current is delivered to the output; if it decreases, less current is delivered.

The second channel is an inverting converter. This channel is also enabled through the EN/SS1 pin. The basic opera-tion of this second channel is the same as the positive channel. The SR latch X2 is also set at the start of each oscillator cycle. The power switch Q2 is turned on at the same time as Q1. Q2 turns off based on its own feedback loop, which consists of error amplifi er A2 and PWM comparator A4. The reference voltage of this negative channel is ground.

Voltage clamps (not shown) on the output of the error amplifi ers A1 and A2 enforce current limit on Q1 and Q2 respectively.

Similar to the fi rst channel, the third channel is also a positive boost regulator. If EN/SS3 is pulled higher than

200mV, the bandgap reference, the start-up bias and the oscillators are also turned on. The SR latch X3 is set at the start of each oscillator cycle which turns on the power switch Q3. Q3 turns off based on its own feedback loop, which consists of error amplifi er A5 and PWM comparator A6. The level at the negative input of A6 is set by the error amplifi er A5, and is an amplifi ed version of the difference between the reference voltage of 0.8V and the maximum of the two feedback voltages at VFB3 and IFB3. A separate comparator (not shown) sets the maximum current limit on Q3.

The IFB3 pin is pulled up internally with a current that is (1/200) times the load current out of the VOUT3 pin. Therefore, an external resistor connected from this pin to ground generates a feedback voltage proportional to the VOUT3 output load current at the IFB3 pin. When the voltage at VFB3 is higher than the voltage at IFB3, the third channel regulates to the feedback voltage at VFB3, which in normal application is a divided down voltage from VOUT3. In this state, the third channel behaves as a boost voltage regulator. On the other hand if the voltage at IFB3 is higher, the third channel regulates to the feedback voltage at IFB3, which therefore regulates the VOUT3 output load current to a particular value. In this state, the third channel behaves as a boost current regulator.

PMOS M1 is used as an output disconnect pass transistor for the fi rst channel. M1 disconnects the load (VOUT1) from the input as long as the voltage between CAP1 and VIN is less than 2.5V (typical) and the voltage between CAP1 and VOUT1 is less than 10V (typ). Similarly, PMOS M3 is used as an output disconnect pass transistor for the third channel. M3 disconnects the load (VOUT3) from the input when the third channel is in shutdown (EN/SS3 voltage is lower than 200mV) and the voltage between CAP3 and VOUT3 is less than 10V (typical).

Page 10: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

103587fc

Inductor Selection

A 15μH inductor and a 10μH inductor are recommended for the LT3587 Boost1 channel and Boost3 channel re-spectively. The inverting channel can use 15μH or 22μH inductors. Although small size is the major concern for most applications, for high effi ciency the inductors should have low core losses at 1MHz and low DCR (copper wire resistance). The inductor DCR should be on the order of half of the switch on resistance for its channel: 0.5Ω for Boost1, 0.4Ω for the inverter and 1Ω for Boost3. For robust applications, the inductors should have current ratings corresponding to their respective peak current during regulation. Furthermore, with no soft-start, the inductor should also be able to withstand temporary high start-up currents of 1A, 1.1A and 480mA for the Boost1, inverter and Boost3 channels respectively (typ, refer to the Typical Performance Characteristics curves).

Capacitor Selection

The small size of ceramic capacitors makes them suitable for LT3587 applications. X5R and X7R types of ceramic capacitors are recommended because they retain their capacitance over wider voltage and temperature ranges than other types such as Y5V or Z5U. A 1μF input ca-pacitor is suffi cient for most LT3587 applications. The output capacitors required for stability depend on the application. For most applications, the output capacitor values required are: 10μF for the Boost1 channel, 22μF for the inverter channel and 2.2μF for the Boost3 chan-nel. The inverter requires a 2.2μF fl ying capacitor. Note that this fl ying capacitor needs a voltage rating of at least VIN + |VNEG|.

Inrush Current

When a supply voltage is abruptly applied to the VIN pin, the voltage difference between the VIN pin and the CAP pins generates inrush current. For the case of the Boost1 channel, the inrush current fl ows from the input through the inductor L1 and the Schottky DS1 to charge the Boost1 output capacitor C1. Similarly for the Boost3 channel, the inrush current fl ows from the input through the inductor L4 and the Schottky DS3 to charge the output capacitor C4.

APPLICATIONS INFORMATIONFor the inverting channel, the inrush current fl ows from the input through inductor L2, charging the fl ying capacitor C2 and returning through the Schottky diode DS2.

The selection of inductor and capacitor values should ensure that the peak inrush current is below the rated momentary maximum current of the Schottky diodes. The peak inrush current can be estimated as follows:

IP =(VVIN − 0.6) • e

−1ϕ

tan−1(ϕ)

LC

ϕ = 4L

R2C− 1

where L is the inductance, C is the capacitance and R is the total series resistance in the inrush current path, which includes the resistance of the inductor and the Schottky diode. Note that in this equation, we model the Schottky as having a fi xed 0.6V drop.

Table 1 gives inrush peak currents for some component selections. Note that inrush current is not a concern if the input voltage rises slowly.

Table 1. Inrush Peak Current

VVIN (V) R (Ω) L (μH) C (μF) IP (A)

5 0.68 15 10 2.48

5 0.68 22 2.2 1.19

5 0.68 10 2.2 1.64

3.6 0.745 15 10 1.64

3.6 0.745 22 2.2 0.80

3.6 0.745 10 2.2 1.10

Schottky Diode Selection

For any of the external diode (DS1, DS2 and DS3) selec-tions, besides having suffi ciently high reverse breakdown voltage to withstand the output voltage, both forward volt-age drop and diode capacitance need to be considered. Schottky diodes rated for higher current usually have lower forward voltage drops and larger capacitance. Although lower forward voltage drop is good for effi ciency, a large

Page 11: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

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Figure 3. Boost3 Confi gured as a Voltage Regulator and as a Current Regulator

capacitance will slow down the switching waveform, which can cause signifi cant switching losses at 1MHz switch-ing frequency. Some recommended Schottky diodes are listed in Table 2.

Table 2. Recommended Schottky Diodes

PARTNUMBER

FORWARD CURRENT

(mA)

FORWARD VOLTAGE DROP (V)

DIODE CAPACI-TANCE

(pF at 10V) MANUFACTURER

RSX051VA-30 1000 0.35 30 ROHMwww.rohm.com

PMEG401OCEJ 500 0.49 25 NXP/Phillipswww.nxp.comPMEG2005EB 500 0.43 8

IR05H40CSPTR 500 0.48 39 Vishaywww.vishay.com

B0540WS 500 0.48 20 Diodes Inc.www.diodes.com

ZLLS400 520 0.53 17 Zetexwww.zetex.com

Smaller Footprint Inverter Topology

In certain applications with higher tolerance of current ripple at the output of the inverter, the inductor L3 can be replaced with a Schottky diode. Since the Schottky diode footprint is usually smaller than the inductor footprint, this alternate topology is recommended if a smaller overall solution is a must. Note that this topology is only viable if the absolute value of the inverter output is greater than VIN.

This Schottky diode is confi gured with the anode connected to the output of the inverter and the cathode to the output end of the fl ying capacitor C2 as shown in Figure 2.

APPLICATIONS INFORMATIONThe same constraints as the other Schottky diodes ap-ply for selecting D3. Therefore, the same recommended Schottky diodes in Table 2 can be used for D3.

Boost3 Overcurrent and Overvoltage Protection

As briefl y discussed in the Operation section, the regula-tion loop of Boost3 uses the maximum of the two voltages at VFB3 and IFB3 as feedback information to set the peak current of its power switch Q3. This allows for the Boost3 loop to be confi gured as either a boost voltage regulator or a boost current regulator (Figure 3). Furthermore, this architecture also allows for a programmable current limit on voltage regulation or voltage limit on current regulation.

Figure 2. Inverter Confi gured with a Schottky Diode in Place of the Output Inductor

3587 F02

SW2

FB2LT3587

RFB11M

VVIN2.5V TO 4.5V

C22.2μF

L215μH D3

INVERTEROUTPUT

–8V, 100mA

DS2C722μF

3587 F03

LT3587BOOST3VOLTAGE

REGULATOR

VIN

VVIN

SW3

EN/SS3 IFB3

CAP3

VOUT3

VFB3

RVFB3

VOLTAGEREGULATIONFEEDBACKRESISTORRIFB3

OPTIONALPROGRAMMABLECURRENT LIMIT RESISTOR

LT3587BOOST3

CURRENTREGULATOR

VIN

VVIN

SW3

EN/SS3 IFB3

CAP3

VOUT3

VFB3

RVFB3

OPTIONALPROGRAMMABLEVOLTAGE LIMITRESISTORRIFB3

CURRENT REGULATIONFEEDBACK RESISTOR

When confi gured as a boost voltage regulator, a feedback resistor from the output pin VOUT3 to the VFB3 pin sets the voltage level at VOUT3 at a fi xed level. In this case, the IFB3 pin can either be grounded if no current limiting is desired or connected to ground with a resistor such that:

ILIMIT = 200 • (0.8V/RIFB3)

where ILIMIT is the desired output current limit value. Recall that the pull-up current on the IFB3 pin is controlled to be typically 1/200 of the output load current at the VOUT3 pin. In this case, when the load current is less than ILIMIT, the Boost3 loop regulates the voltage at the VFB3 pin to 0.8V. When there is an increase in load current beyond ILIMIT, the voltage at VFB3 starts to drop and the voltage at IFB3 rises above 0.8V. The Boost3 loop then regulates the voltage at the IFB3 pin to 0.8V, limiting the output

Page 12: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

123587fc

APPLICATIONS INFORMATIONcurrent at VOUT3 to ILIMIT. Figure 4 compares the transient responses with and without current limit when a current overload occurs.

Figure 4. Boost3 Waveform in an Output Current Overload Event with and Without Output Current Limit

lower than 29V is obtained by connecting a resistor from the VOUT3 pin to the VFB3 pin such that:

RFB3 = ((VCLAMP/0.8V) – 1) • 56.3k

where VCLAMP is the desired output voltage clamp level. In this case, when the voltage level is less than VCLAMP, the Boost3 loop regulates the voltage at the IFB3 pin to 0.8V. When the output load fails open-circuit or is disconnected, the voltage at IFB3 drops to refl ect the lower output current and the voltage at VFB3 starts to rise. When the voltage at VOUT3 rises to VCLAMP, the Boost3 loop then regulates the voltage at the VFB3 pin to 0.8V, limiting the voltage level at VOUT3 to VCLAMP. Figure 5 contrasts the transient responses with and without programmed VCLAMP when the output load is disconnected.

Figure 5. Boost3 Output Open-Circuit Waveform with and Without Programmed Output Voltage Clamp

3587 F04a

VVIN = 3.6VWITHOUT CURRENT LIMIT: IFB3CONNECTED TO GNDVOUT3 STAYS AT 15V, OUTPUT CURRENT INCREASES FROM 20mA TO 40mA

IL4200mA/DIV

VVOUT35V/DIV

IVOUT313mA/DIV

200μs/DIV

15V

20mA

LOAD STEP

3587 F04b

VVIN = 3.6VWITH 20mA CURRENT LIMIT: RIFB3 = 8.06k OUTPUT CURRENT STAYS AT 20mA,VOUT3 DROPS FROM 15V TO 7.5V

IL4200mA/DIV

VVOUT35V/DIV

IVOUT313mA/DIV

200μs/DIV

15V

20mA

LOAD STEP

3587 F05a

VVIN = 3.6VWITHOUT PROGRAMMED OUTPUT VOLTAGECLAMP: VFB3 CONNECTED TO GND

IL4200mA/DIV

VVOUT310V/DIV

200μs/DIV

20V

OUTPUT LOADDISCONNECTED

3587 F05b

VVIN = 3.6VWITH PROGRAMMED OUTPUT VOLTAGE CLAMP AT 24V

IL4200mA/DIV

VVOUT310V/DIV

200μs/DIV

20V

OUTPUT LOADDISCONNECTED

The LT3587 CAP3 pin has an internal overvoltage protec-tion. When the voltage at the CAP3 pin is driven above 29V (typ), the Boost3 loop is disabled and the SW3 pin stops switching.

When confi gured as a boost current regulator, a feedback resistor from the IFB3 pin to ground sets the output cur-rent at VOUT3 at a fi xed level. In this case, if the VFB3 pin is grounded then the overvoltage protection defaults to the open-circuit clamp voltage level of 29V. A voltage clamp

Page 13: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

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APPLICATIONS INFORMATIONSetting The Output Voltages and The Boost3 Output Current

The LT3587 has a trimmed internal feedback resistor. A 1M feedback resistor from each output pin to its corresponding feedback pin sets the outputs to 15V for Boost1, –8V for the inverter and 15V for Boost3. Note that only one resistor is needed to set the output voltage for each channel. Set the output voltages according to the following formulas:

RFB1 = ((VVOUT1/1.22V) – 1) • 88.5k

RFB2 = |VNEG|/8μA

RVFB3 = ((VVOUT3/0.8V) – 1) • 56.3k

As described in previous sections, Boost3 can be confi gured as a boost current regulator. When confi gured as such, set the output current according to the following formula:

RIFB3 = 200 • (0.8V/IVOUT3)

In order to maintain accuracy, use high precision resistors when setting any of the channels output voltage and/or the Boost3 output current (1% is recommended).

Soft-Start

The LT3587 has two soft-start control pins: EN/SS1 and EN/SS3. The EN/SS1 pin controls the soft-start for both the Boost1 and the inverter, while the EN/SS3 pin controls the soft-start for the Boost3. Each of these soft-start pins is pulled up internally with a 1μA current source.

Connecting a capacitor from the EN/SS1 pin to ground programs a soft-start ramp for the Boost1 and the inverter channels. Use an open-drain transistor to pull this pin low to shut down both the Boost1 and the inverter. Turning off this transistor allows the 1μA pull-up current to charge the soft-start capacitor. When the voltage at the EN/SS1 pins goes above 200mV, the regulation loops for Boost1 and the inverter are enabled. The VC1 node voltage follows the EN/SS1 voltage as it continues to ramp up to ensure slow start-up on the Boost1 channel. The VC2 node follows the ramp voltage minus 0.7V. This ensures that the inverter starts up after the Boost1, but still has a slow ramping output to avoid large start-up currents. The Boost1 and the inverter regulation loops are free running with full inductor current when the voltage at the EN/SS1 pin is above 2.5V.

Connecting a capacitor from the EN/SS3 pin to ground sets up a soft-start ramp for the Boost3 channel. As the 1μA current charges up the capacitor, the Boost3 regula-tion loop is enabled when the EN/SS3 pin voltage goes above 200mV. The VC3 node voltage follows the EN/SS3 voltage as it ramps up ensuring slow start-up on the Boost3 channel. When the voltage at the EN/SS3 pin is above 2V, the Boost3 regulation loop is free running with full inductor current.

Start Sequencing

The LT3587 also has internal sequencing circuitry that inhibits the inverter channel from operating until the feed-back voltage of the Boost1 voltage (at the FB1 pin) reaches about 1.1V (87% of the fi nal voltage). This ensures that the Boost1 output voltage is near regulation before any negative voltage is generated at the inverter output.

Figure 6 contrasts the start-up sequencing without any soft-start capacitor, and with a 10nF soft-start capacitor.

Figure 6. VEN/SS1, VOUT1, VNEG, IVIN with No Soft-Start Capacitor, and with a 10nF Soft-Start Capacitor

3587 F06a

IVIN500mA/DIV

VVOUT110V/DIV

VNEG10V/DIV

VEN/SS12V/DIV

400μs/DIV

0V

0V

0V

0mA

3587 F06b

IVIN500mA/DIV

VVOUT110V/DIV

VNEG10V/DIV

VEN/SS12V/DIV

4ms/DIV

0mA

0V

0V

Page 14: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

143587fc

APPLICATIONS INFORMATIONOutput Disconnect

Both the Boost1 and the Boost3 channels have an output disconnect between their respective CAP pin and VOUT pin. This disconnect feature prevents a DC path from VIN to VOUT .

For Boost1, this output disconnect feature is implemented using a PMOS (M1) as shown in the Block Diagram in Figure 1. When turned on, M1 is driven hard in the linear region to reduce power dissipation when delivering cur-rent between the CAP1 pin and the VOUT1 pin. M1 stays on as long as the voltage difference between CAP1 and VIN is greater than 2.5V. This allows for the positive bias to stay high for as long as possible as the negative bias discharges during turn off.

The disconnect transistor M1 is current limited to provide a maximum output current of 155mA (typ). However, there is also a protection circuit for M1 that limits the voltage drop across CAP1 and VOUT1 to about 10V. When the voltage at CAP1 is greater than 10V, in an overload or a short-circuit event, M1 current is limited to 155mA until the voltage across CAP1 to VOUT1 grows to about 10V. Then M1 is turned on hard without any current limit to allow for the voltage on CAP1 to discharge as fast as possible. When the voltage across CAP1 and VOUT1 reduces to less than 10V, the output current is then again limited to 155mA. Figure 7 shows the output voltage and current during an overload event with VCAP1 initially at 15V.

Figure 7. VCAP1,VVOUT1, IVOUT1 and IL1 During a Short-Circuit Event

Figure 8. VCAP3, VVOUT3, IVOUT3 and IL4 During a Short-Circuit Condition with and Without Programmed 20mA Current Limit

3587 F07

IL1500mA/DIV

VCAP110V/DIV

VVOUT110V/DIV

IVOUT1500mA/DIV

40μs/DIVVVIN = 3.6VC1 = 4.7μF

0mA

15V

15V

3587 F08a

IL4500mA/DIV

VCAP310V/DIV

VVOUT310V/DIV

IVOUT3500mA/DIV

40μs/DIV

0mA

24V

3587 F08b

IL4500mA/DIV

VCAP310V/DIV

VVOUT310V/DIV

IVOUT3500mA/DIV

40μs/DIV

24V

0mA

VVIN = 3.6VC4 = 1μF

The output disconnect feature on Boost3 is implemented similarly using M3. However, in this case M3 is only turned off when the EN/SS3 pin voltage is less than 200mV and the Boost3 regulation loop is disabled.

The disconnect transistor M3 is also current limited, pro-viding a maximum output current at VOUT3 of 110mA (typ). M3 also has a similar protection circuit as M1 that limits the voltage drop across CAP3 and VOUT3 to about 10V. Figure 8 shows the output voltage and current during an overload event with VCAP3 initially at 24V.

Choosing A Feedback Node

Boost1 feedback resistor, RFB1, may be connected to the VOUT1 pin or the CAP1 pin (see Figure 9). Similarly for Boost3 in a boost voltage regulator confi guration, the feedback resistor, RVFB3, may be connected to the VOUT3 pin or the CAP3 pin. Regulating the VOUT1 and VOUT3 pins eliminates the output offset resulting from the voltage drop across the output disconnect PMOS transistors.

Page 15: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

153587fc

APPLICATIONS INFORMATION

However, in the case of a short-circuit fault at the VOUT pins, the LT3587 will switch continuously because the FB1 or the VFB3 pin is low. While operating in this open-loop condition, the rising voltage at the CAP pins is limited only by the protection circuit of their respective output disconnects. At the worst case, the CAP pin rises to 10V above the corresponding VOUT pin. So in the case of short-circuit fault to ground, the voltage on the CAP pins may reach 10V. When the short-circuit condition is removed, the VOUT pins rise up to the voltage on the CAP pins, potentially exceeding the programmed output voltage until the capacitor voltages fall back into regulation. While this is harmless to the LT3587, this should be considered in the context of the external circuitry if short-circuit events are expected.

Regulating the CAP pins ensures that the voltage on the VOUT pins never exceeds the set output voltage after a short-circuit event. However, this setup does not com-pensate for the voltage drop across the output disconnect, resulting in an output voltage that is slightly lower than the voltage set by the feedback resistor. This voltage drop is equal to the product of the output current and the on resistance of the PMOS disconnect transistor. This drop can be accounted for when using the CAP pin as the feedback node by setting the output voltage according to the following formula:

Figure 10. Waveforms During Fault Detection of a Short-Circuit Event

RFB1 =VVOUT1 + IVOUT1 •RDISC1 − 1.22V

13.8μA

RFB3 =VVOUT3 + IVOUT3 •RDISC3 − 0.8V

14.3μA

Fault Detection and Indicator

The LT3587 features fault detection on all its outputs and a fault indicator pin (FLT). The fault detection circuitry is enabled only when at least one of the channels has com-pleted the soft-start process and is free running with full inductor current. Once the fault detection is enabled, the Fault pin pulls low when any of the feedback voltages (VFB1, VFB2 or Max(VVFB3,VIFB3)) fall below their regulation value for more than 16ms.

One particularly important case is an overload or short-circuit condition on any of the channel outputs. In this case, if the corresponding loop is unable to bring the output back into regulation within 16ms, a fault is detected and the Fault pin is pulled low.

Note that the fault condition is latched. Once the Fault pin is pulled low, all the three channels are disabled. In order to enable any of the channels again, reset the part by shut-ting it down and then turning it on again. This is done by fi rst forcing both the EN/SS1 and EN/SS3 pins low below 200mV and then either letting them go high again in a soft-start process or forcing them high immediately if no soft-start is desired. Figure 10 shows the waveforms when a short-circuit condition occurs at Boost1 for more than 16ms as well as the subsequent resetting of the part.

3587 F10

ENSS1/ENSS35V/DIV

VNEG10V/DIV

VVOUT320V/DIV

VVOUT110V/DIV

VFLT5V/DIV

100ms/DIV

PART RESET

SHORTAT VOUT1

Figure 9. Feedback Connection Using the VOUT and CAP Pins

3587 F09

VOUT3

CAP3

VFB3

IFB3SW2 DN FB2

GND

CAP1

FB1

VOUT1

LT3587

FLT B1EN/SS

B3EN/SS

SW3 SW1VIN

VOUT3

CAP3

VFB3

IFB3SW2 DN FB2

GND

CAP1

FB1

VOUT1

LT3587

FLT B1EN/SS

B3EN/SS

SW3 SW1VIN

RVFB3

RFB1

RVFB3

RFB1

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LT3587

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Figure 12. Dimming Using a DAC and a Resistor

APPLICATIONS INFORMATIONBesides acting as a fault output indicator, the Fault pin is also an input pin. If this pin is externally forced low below 400mV, the LT3587 behaves as if a fault event has been detected and all the channels turn off. In order to turn the part back on, remove the external voltage that forces the pin low and reset the part. Figure 11 shows the waveforms when the Fault pin is externally forced low and the subsequent resetting of the part.

Since the programmed VOUT3 current is proportional to the current through RIFB3, the LED current can be adjusted according to the following formula:

IVOUT3 = (0.8V – VDAC-OUT) • 200/RIFB3

A higher DAC output voltage level results in lower LED current and hence lower overall brightness. Conversely, a lower DAC output voltage results in higher LED current and higher brightness. Note that the DAC output impedance should be low enough to be able to sink approximately 1/200 of the desired maximum LED current without any appreciable error for accurate dimming control.

Note also that the maximum output current is limited by the output disconnect current limit to 110mA (typ).

PWM Dimming

Changing the forward current fl owing in the LEDs not only changes the brightness intensity of the LEDs, it also changes the color. The chromaticity of the LEDs changes with the change in forward current. Many applications cannot tolerate any shift in the color of the LEDs. Control-ling the intensity of the LEDs with a direct PWM signal allows dimming of the LEDs without changing the color. In addition, direct PWM dimming offers a wider dimming range to the user.

10μH

3587 F12

VOUT3

CAP3

IFB3

LT3587

RIFB38.06k

EN/SS3

SW3VIN

LED DRIVER

1μF

VVIN2.5V TO 5V

VDAC-OUTDACLTC2630

Figure 11. Waveforms When the Fault Pin is Externally Forced Low

3587 F11

ENSS1/ENSS35V/DIV

VNEG10V/DIV

VVOUT320V/DIV

VVOUT110V/DIV

VFLT5V/DIV

100ms/DIV

PART RESET

FLT FORCED LOW

Dimming Control For Boost3 Current Regulator as an LED Driver

As shown on the front page application and the Block Dia-gram, one of the most common applications for the Boost3 channel when confi gured as a boost current regulator is a backlight LED driver. In an LED driver application, there are two different ways to implement a dimming control of the LED string. The LED current can be adjusted either by using a digital to analog converter (DAC) with a resistor RIFB3 or by using a PWM signal.

Using a DAC and a Resistor

For some applications, the preferred method of brightness control is using a DAC and a resistor. The Boost3 confi gura-tion for using this method is shown in Figure 12.

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LT3587

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APPLICATIONS INFORMATION

Figure 14. PWM Dimming Waveforms

Dimming the LEDs via a PWM signal essentially involves turning the LEDs on and off at the PWM frequency. The typical human eye has a sensitivity limit of ~60Hz. By increasing the PWM frequency to ~80Hz or higher, the eye will interpret that the pulsed light source is continuously on. Additionally, by modulating the duty cycle (amount of “on-time”), intensity of the LEDs is controlled. The color of the LEDs remains unchanged in this scheme since the LED current is either zero or a constant value.

Figure 13 shows a partial application showing an LED driver for six white LEDs. If the voltage at the CAP3 pin is higher than 10V when the LEDs are on, direct PWM dim-ming method requires an external NMOS. This external NMOS is tied between the cathode of the lowest LED in the string and ground as shown in Figure 13.

A Si1304 logic-level MOSFET can be used since its source is connected to ground, and it is able to withstand the open-circuit voltage at the VOUT3 pin across its drain and source. The PWM signal must be applied to the EN/SS3 pin of the LT3587 and the gate of the NMOS. The PWM signal should traverse between 0V to 2.5V, to ensure proper turn on and off of the Boost3 regulation loop and the NMOS transistor MN1. When the PWM signal goes high, the LEDs are connected to ground and a current of IVOUT3 = 160V/RIFB3 fl ows through the LEDs. When the PWM signal goes low, the LEDs are disconnected and turned off.

The output disconnect feature and the external NMOS ensure that the LEDs quickly turn off without discharging the output capacitor. This allows the LEDs to turn on faster. Figure 14 shows the PWM dimming waveforms for the circuit in Figure 13.

Figure 13. Six White LEDs Driver With PWM Dimming

10μH

3587 F13

VOUT3

CAP3

IFB3

LT3587

RIFB38.06k

EN/SS3

SW3VIN

LED DRIVER20mA

1μF

VVIN2.5V TO 5V

PWMFREQ

2.5V

0V

MN1Si1304BDL

3587 F14

ENSS35V/DIV

IL4200mA/DIV

IVOUT313mA/DIV

2ms/DIVVVIN = 3.6V6 LEDs

0mA

0mA

0V

Page 18: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

183587fc

Figure 16. Dimming Range Comparison of Three PWM Frequencies

The time it takes for the LED current to reach its pro-grammed value sets the achievable dimming range for a given PWM frequency. Figure 15 shows the average current variation over duty cycle for a 100Hz PWM frequency with the circuit in Figure 13.

Notice that at lower end of the duty cycle, the linear rela-tion between the average LED current and the PWM duty cycle is no longer preserved. This indicates that the loop requires a fi xed amount of time to reach its fi nal current. When the duty cycle is reduced such that the amount of on time is in the order of or less than this settling time, the loop no longer has the time to regulate to its fi nal current before it is turned off again and the initial current before settling is a larger proportion of the average current.

Depending on how much linearity on the average LED current is required, the minimum LED on time is chosen based on the graphs in Figure 15. For example, for ap-proximately 10% deviation from linearity at the lower duty cycle, the minimum on time of the LED current is approximately 320μs for a 3.6V input voltage.

The achievable dimming range for this application with a 100Hz PWM frequency can be determined using the following method.

APPLICATIONS INFORMATION

Example:

f = 100Hz → tPERIOD = 1/f = 0.01s, tMIN-ON = 320μs

Dim Range = tPERIOD/tMIN-ON = 0.01s/320μs ≈ 30:1

Min Duty Cycle = (tMIN-ON/tPERIOD) • 100 = 3.2%

Duty Cycle Range = 100% → 3.2% at 100Hz

The calculations show that for a 100Hz signal the dimming range is 30 to 1. In addition, the minimum PWM duty cycle of 3.2% ensures that the LED current varies linearly with duty cycle to within 10%. Figure 16 shows the dimming range achievable for three different frequencies with a minimum on time of 320μs.

The dimming range can be further extended by combin-ing this PWM method with the DAC and resistor method discussed previously. In this manner both analog dimming and PWM dimming extend the dimming range for a given application. The color of the LEDs no longer remains constant because the forward current of the LED changes with the output voltage of the DAC. For the six LED ap-plication described above, the LEDs can be dimmed fi rst by modulating the duty cycle of the PWM signal with the DAC output at 0V. Once the minimum duty cycle is reached, the value of the DAC output voltage can be increased to further dim the LEDs. The use of both techniques together allows the average LED current for the six LED application to be varied from 20mA down to less than 1μA.

PWM DIMMING RANGE3587 F16

1 10 100

1kHz

300Hz

100Hz

Figure 15. Average LED Current Variation with PWM Duty Cycle at 100Hz PWM Frequency

DUTY CYCLE (%)

AV

ER

AG

E C

UR

REN

T (

mA

)

3587 F15

100

0.1

1

10

0.011 10 100

IDEAL

MEASURED

Page 19: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

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APPLICATIONS INFORMATIONLower Input Voltage Applications

The LT3587 can be used in lower input voltage applica-tions. The VIN supply voltage to the LT3587 must be 2.5V to 6V. However, the inductors can be run off a lower voltage. This allows the outputs to be powered off two alkaline cells. Most portable devices and systems have a 3.3V logic supply voltage which can be used to power

Figure 17. 2 AA Cells Providing CCD Positive and Negative Supply and a Three White Backlight LED Driver

L115μH

L410μH

3587 F17

IFB3

EN/SS3

EN/SS1

FLT

SW2 GND FB2

CAP1

FB1

VOUT1

LT3587

VFB3 VOUT3 CAP3 SW3 SW1 C14.7μF

RFB1787k

CCD POSITIVE12V, 10mA

2AA CELLS2V TO 3.2V

C22.2μFL2

15μHL3

15μH

RFB21M

CCD NEGATIVE–8V, 20mA

LED DRIVER20mA UP TO 12V

2AA CELLS2V TO 3.2V

C710μF

DS2

VIN

DS3

C41μF

RVFB3787k

(OPTIONAL)

DS1RIFB38.06k

C1: MURATA GRM21BR61E475KA12LC2: MURATA GRM188R61C225KE15DC4: MURATA GRM188R61E105KA12BC6: MURATA GRM155R61A105KE15DC7: MURATA GRM21BR71A106KE51L

CFB1: MURATA GRM1555C1H3R3BZ01DCFB2: MURATA GRM1555C1H6R3BZ01DL1, L2, L3: SUMIDA CDRH2D18/HP-150NL4: TOKO 1071AS-100MDS1, DS2, DS3: NXP PMEG2005EB

C61μF

3.3V

CFB13.3pF

CFB26.8pF

the LT3587. The outputs can be driven straight from the battery, resulting in higher effi ciency.

Figure 17 shows a typical digital still camera application with CCD positive and negative supply as well as an LED driver powered by two AA cells. The battery is connected to the input inductors and the chip is powered with a 3.3V logic supply voltage.

Page 20: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

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APPLICATIONS INFORMATION

Figure 19. Recommended Component Placement

Figure 18. High Current Paths

Board Layout Consideration

As with all switching regulators, careful attention must be paid to the PCB board layout and component placement. To maximize effi ciency, switch rise and fall times are made as short as possible. To prevent electromagnetic interfer-ence (EMI) problems, proper layout of the high frequency switching path is essential.

In order to minimize magnetic fi eld radiation, reduce the parasitic inductance by keeping the traces that conduct high switching currents short, wide and with minimal overall loop area. These are typically the traces associated with the switches. Figure 18 outlines the critical paths.

C6 C1

SW1

GND

VVIN

L1

Q1

CAP1

DS1

LT3587C6 C4

SW3

GND

VVIN

L4

Q3

CAP3

DS3

LT3587

3587 F18

C6 C7

SW2

GND

VVIN VNEG

L2 L3

Q2

DS2LT3587

C2

The voltage signals of the SW1, SW2 and SW3 pins have rise and fall times of a few ns. Minimize the length and area of all traces connected to the SW1, SW2 and SW3 pins to reduce capacitive coupling between these fast nodes and other circuitry. In particular, keep all the traces of the feedback voltage pins (FB1, FB2, VFB3 and IFB3) away from the switching node. Always use a ground plane under the switching regulator to minimize interplane coupling.

Finally, place as much of the output capacitors of each channel close to their respective CAP pins. Recommended component placement is shown in Figure 19.

3587 F19

L4

L3

L2

C7

C2U1

L1

C1

C4

C6(OPT)

C6(OPT)

C6(OPT)

DS2DS1

RFB1

CFB1

C5

C6C3

RIFB3RFB2

CFB2

VNEG

VIN CAP3

VIN

VOUT3

VOUT1

CAP1VIN

DS3

Page 21: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

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TYPICAL APPLICATIONSLi-Ion Powered Supply for CCD Imager and Five White Backlight LEDs

L115μH

L410μH

3587 TA02

IFB3

EN/SS3

EN/SS1

FLT

SW2 GND FB2

CAP1

FB1

VOUT1

LT3587

VFB3 VOUT3 CAP3 SW3 VIN SW1

C61μF

C110μF

CFB12.7pF

RFB11M

CCD POSITIVE15V, 50mA

VVIN2.5V TO 6V

C22.2μFL2

15μHL3

15μH

RFB21M

CCD NEGATIVE–8V, 100mA

LED DRIVER20mA UP TO 24V

VVIN2.5V TO 6V

C722μF

DS2

DS3

C42.2μF

RVFB31.65M

(OPTIONAL)

DS1RIFB38.06k

C5100nF

C3100nF

C1: MURATA GRM21BR61C106KE15LC2: MURATA GRM188R61C225KE15DC3, C5: MURATA GRM033R60J104KE19DC4: MURATA GRM21BR71E225KA73LC6: MURATA GRM155R61A105KE15DC7: TAIYO YUDEN LMK212BJ226MG-T

CFB1: MURATA GRM1555C1H2R7BZ01DCFB2: MURATA GRM1555C1H6R8BZ01DL1, L2, L3: SUMIDA CDRH2D18/HP-150NL4: TOKO 1071AS-100MDS1, DS2, DS3: IR IR05H40CSPTR

CFB26.8pF

Page 22: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

223587fc

TYPICAL APPLICATIONSDriver For a CCD Imager and an OLED Display Panel with Soft-Start

Extending the High Voltage Range and the Number of Independently Controlled Regulated Outputs

L115μH

L415μH

3587 TA04

VOUT3 CAP3VFB3

IFB3

SW2 GND FB2

CAP1

FB1

VOUT1

LT3587

FLT

EN/SS1

EN/SS3

SW3 SW1VIN

C61μF

SUPPLY 1:18V, 50mA

VVIN3V TO 6V

C22.2μF D3

RFB22.26M

RIFB310.7k

C42.2μF

SUPPLY 3:25V, 1mA TO 10mA VVIN

3V TO 6V

C722μF

DS1C1

10μF

CFB12.2pF

RFB11.21M

DS3

C5100nF

C3100nF

DS2D9

L222μH

C1: MURATA GRM31CR71E106KA12LC2, C8, C11: MURATA GCM21BR71E225KA73LC3, C5: MURATA GRM033R60J104KE19DC4: MURATA GRM21BR71E225KA73LC6: MURATA GRM155R61A105KE15DC7: MURATA GRM32ER61E226KE15LC9, C12: MURATA GRM31CR71H225KA55LC10, C13: MURATA GRM21BR71H105KA12L

CFB1: MURATA GRM1555C1H2R2BZ01DCFB2: MURATA GRM1555C1H2R7BZ01DL1, L4: COILCRAFT LPS4018-153L2, L3: COILCRAFT LPS4018-223DS1, DS2, DS3, D3, D4, D5, D6, D7, D9, D10: IR IR05H40CSPTRD8: DIODES INC DDZ9709T

RVFB31.74M

SUPPLY 2:–18V, 50mA

CFB22.7pF

INOUT

SHDNADJ

LT3014

GND

R63.24M

R7100k

C131μF

SUPPLY 5:40V, 5mA

C122.2μF

C92.2μF

D7 D5

D6

SUPPLY 1

D4

SUPPLY 2

C112.2μF

C82.2μF

IN OUT

SHDN ADJ

LT1964

GND R5100k

R61.21M

C101μF

D824V

SUPPLY 4:–40V, 5mA

D10

L115μH

L410μH

3587 TA03

VOUT3 CAP3VFB3

IFB3

SW2 GND FB2

CAP1

FB1

VOUT1

LT3587

FLT

EN/SS1

EN/SS3

SW3 SW1VIN

C61μF

CCD POSITIVE15V, 50mA

VVIN2.5V TO 6V

C22.2μF D3

RFB21M

CCD NEGATIVE–8V, 100mA

RIFB37.15k

(OPTIONAL)

C41μF

OLED DRIVER16V, 20mA VVIN

2.5V TO 6V

C722μF

DS1

C14.7μF

RFB11M

DS3

C5100nF CFB2

6.8pF

C3100nF

DS2

L215μH

C1: TAIYO YUDEN TMK212BJ475KG-TC2: TAIYO YUDEN EMK107BJ225KA-TC3, C5: TAIYO YUDEN JMK063BJ104KP-FC4: TAIYO YUDEN GMK107BJ105KA-TC6: TAIYO YUDEN LMK105BJ105KV-F

C7: TAIYO YUDEN LMK212BJ226MG-TCFB1: TAIYO YUDEN EMK105SK2R7JW-FCFB2: TAIYO YUDEN EMK105SH6R8JW-FL1, L2: SUMIDA CDRH2D18/HP-150NL4: TOKO 1071AS-100MDS1, DS2, DS3, D3: NXP PMEG2005EB

RVFB31.07M

CFB12.7pF

Page 23: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

233587fc

Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

3.00 ± 0.10(4 SIDES)

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONSAPPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED

1.65 ± 0.05

NOTE:1. DRAWING IS NOT A JEDEC PACKAGE OUTLINE2. DRAWING NOT TO SCALE3. ALL DIMENSIONS ARE IN MILLIMETERS4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE5. EXPOSED PAD SHALL BE SOLDER PLATED6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE

PIN 1TOP MARK(NOTE 6)

0.40 ± 0.10

BOTTOM VIEW—EXPOSED PAD

1.65 ± 0.10(4-SIDES)

0.75 ± 0.05 R = 0.115TYP

R = 0.05TYP

0.20 ± 0.05

1

PIN 1 NOTCH R = 0.20 TYPOR 0.25 × 45° CHAMFER

19 20

2

0.40 BSC

0.200 REF

2.10 ± 0.05

3.50 ± 0.05(4 SIDES)

0.70 ±0.05

0.00 – 0.05

(UD20) QFN 0306 REV A

0.20 ±0.050.40 BSC

PACKAGEOUTLINE

PACKAGE DESCRIPTIONUD Package

20-Lead Plastic QFN (3mm × 3mm)(Reference LTC DWG # 05-08-1720 Rev A)

Page 24: LT3587 - High Voltage Monolithic Inverter and Dual Boost · CAP1 Bias Current VCAP1 = 15V, VOUT1 = Open 60 150 μA FB1 Reference Voltage l 1.19 1.22 1.25 V VOUT1 Output Voltage RFB1

LT3587

243587fc

Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2008

LT 0109 REV C • PRINTED IN USA

RELATED PARTS

TYPICAL APPLICATION

PART NUMBER DESCRIPTION COMMENTS

LT1944 Dual Output, Boost/Inverter, 350mA ISW, High Effi ciency Boost-Inverting DC/DC Converter

VIN(MIN) = 1.2V, VIN(MAX) = 15V, VOUT(MAX) = ±34V, IQ = 20, ISD < 1μA, MSOP-10 Package

LT1945 Dual Output, Boost/Inverter, 350mA ISW, High Effi ciency Boost-Inverting DC/DC Converter

VIN(MIN) = 1.2V, VIN(MAX) = 15V, VOUT(MAX) = ±34V, IQ = 20, ISD < 1μA, MSOP-10 Package

LT3463/LT3463A Dual Output, Boost/Inverter, 250mA ISW, Constant Off-Time, High Effi ciency Step-Up DC/DC Converter with Integrated Schottkys

VIN(MIN) = 2.3V, VIN(MAX) = 15V, VOUT(MAX) = 40V, IQ = 40μA, ISD < 1μA, 3 × 3 DFN-10 Package

LT3466/LT3466-1 Dual Constant Current, 2MHz, High Effi ciency White LED Boost Regulator with Integrated Schottky Diode

VIN(MIN) = 2.7V, VIN(MAX) = 24V, VOUT(MAX) = 40V, IQ = 5mA, ISD < 16μA, 3 × 3 DFN-10 Package

LT3471 Dual Output, Boost/Inverter, 1.3A ISW, 1.2MHz, High Effi ciency Boost-Inverting DC/DC Converter

VIN(MIN) = 2.4V, VIN(MAX) = 16V, VOUT(MAX) = 40V, IQ = 2.5mA, ISD < 1μA, 3 × 3 DFN-10 Package

LT3472/LT3472A Dual Output, Boost/Inverter, 400mA ISW, 1.2MHz, High Effi ciency Boost-Inverting DC/DC Converter

VIN(MIN) = 2.2V, VIN(MAX) = 16V, VOUT(MAX) = ±34V IQ = 2.8mA, ISD < 1μA, 3 × 3 DFN-10 Package

LT3473/LT3473A 40V, 1A, 1.2MHz Micropower Low Noise Boost Converter with Output Disconnect

VIN(MIN) = 2.2V, VIN(MAX) = 16V, VOUT(MAX) = 36V, IQ = 150μA, ISD < 1μA, 3 × 3 DFN-12 Package

LT3494/LT3494A 40V, 180mA/350mA Micropower Low Noise Boost Converter with Output Disconnect

VIN(MIN) = 2.3V, VIN(MAX) = 16V, VOUT(MAX) = 40V, IQ = 65μA, ISD < 1μA, 3 × 2 DFN-8 Package

LT3497 Dual 2.3MHz, Full Function LED Driver with Integrated Schottkys and 250:1 True Color PWM Dimming

VIN(MIN) = 2.5V, VIN(MAX) = 10V, VOUT(MAX) = 32V, IQ = 6mA, ISD < 12μA, 2 × 3 DFN-10 Package

LT3580 40V, 2A, 2.5MHz Boost/Inverter DC/DC Converter VIN: 2.5V to 32V, VOUT(MAX) = 40V, IQ = 1mA, ISD < 1μA, MSOP-8E, 3mm × 3mm DFN-8 Packages

General Purpose High Voltage Supplies Generator

L115μH

L410μH

3587 TA05

VOUT3 CAP3VFB3

IFB3

SW2 GND FB2

CAP1

FB1

VOUT1

LT3587

FLT

EN/SS1

EN/SS3

SW3 SW1VIN

C61μF

SUPPLY 1:15V, 50mA

VVIN2.5V TO 6V

C22.2μF

RFB22M

CFB22.2pF SUPPLY 2:

–16V, 50mA

RIFB36.34k

C42.2μF

SUPPLY 3: 25V SUPPLYWITH SAFETY

CURRENT LIMIT AT 25mAVVIN2.5V TO 6V

C722μF

DS1C1

10μF

RFB11M

DS3

C5100nF

C3100nF

DS2DS4

L222μH

L322μH

C1: MURATA GRM31CR71E106KA12LC2: MURATA GRM21BR71E225KA73LC3, C5: MURATA GRM033R60J104KE19DC4: MURATA GRM21BR71E225KA73LC6: MURATA GRM155R61A105KE15DC7: MURATA GRM32ER61E226KE15LCFB1: MURATA GRM1555C1H2R7BZ01DCFB2: MURATA GRM1555C1H2R2BZ01DL1: COILCRAFT LPS4018-153L2, L3: COILCRAFT LPS4018-223L4: TOKO 1071AS-100MDS1, DS2, DS3, DS4: IR IR05H40CSPTR

RVFB31.74M

CFB12.7pF