macmic science & technology power semiconductor devices catalog 2011
DESCRIPTION
Efficient International Technology, Power Semiconductor Provider, High Power Semiconductor, Power Module, Fast Recovery Epitaxial Diode, Chip, Discrete, Module, IGBT, Transistor, Thyristor, SCR Module, Rectifier Diode Module, Power Rectifier, Three Phase Rectifier Bridge Module, Schottky Diode, Silicon Carbide Material SemiconductorTRANSCRIPT
WORLD CLASS POWER SEMICONDUCTOR TECHNOLOGY
ULTRA FAST AND SOFT RECOVERY DIODE DISCRETE
FULL RANGE OF POWER MODULES (FRED, IGBT, SCR, AND RECTIFER)
PROFESSIONAL CUSTOM POWER MODULE SERVICE
POWER SEMICONDUCTOR DEVICE TEST SOLUTION
MACMIC SCIENCE & TECHNOLOGY CO., LTD.
FROM CHIP, DISCRETE, MODULE TO DEVICE TESTER, YOUR TRUSTED POWER SEMICONDUCTOR PROVIDER!
Power for the Better
MACMIC SCIENCE & TECHNOLOGY CO., LTD.
Power for the Better
1
Company ProfileMacMic Science & Technology Co., Ltd. is a high-tech company consisting of scientists and engineers with expertise of power electronics and engaged in development and production of power semiconductor products at home and abroad. We provide customer the best cost performance products with fast response to customer’s demands.
Our well-equipped manufacture, testing facilities, and our skilled workers enable us to supply high quality and reliability products. The fast and flexible ability to meet customers’ demands highlights our business uniqueness and has surely served as a great value to their competitive advantages.
Strengths and Facts．Certified National Key Hi-Tech Enterprise．Academy Fellow Programme．Drafter of National Standard for IGBT．Advanced Reliability and Failure Analysis Lab．Advanced Power Module Production Line．14 Chinese Patents and 3 International Patents Awarded．R&D Center at Santa Fe Springs, USA．National Hi-Tech Industrialization Demonstration Base．Energy-Efficient Electronic Research Center Joint with Nanjing University
ISO 9001
CERTIFICATION
Cleanroom: 1,000 m2, Class 10,000 Grade,
Equipment: Vacuum Over, Wire Bonding, X-Ray Scanner
Characterization Lab: ．Diode Reverse Recovery Tester ．IGBT DC Parameter Tester ．IGBT Switching Parameter Tester ．IGBT Charge Tester, Short Circuit Tester ．SCR Static & Dynamic Parameter Tester ．Power Semiconductor UIS Tester, Surge Current Tester ．Power Semiconductor Transient Thermal Resistance Tester
Reliability Lab: ．High Temperature Reverse Bias ．High Temperature Gate Bias ．85/85 Temperature / Humidity Test ．High/ Low Temperature Cycle ．Power Cycle
Advanced Facilities and Quality Production◎◎◎
◎
About MACMIC關於宏微科技
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
Category: Ultra Fast Recovery Epitaxial Diode Chip
Power Range: 100V~1700V / 1A~200A
Features: • Very Short Recovery Time • Soft Recovery Characteristic • Low Reverse Recovery Charge • Low Leakage Current • Avalanche Energy Rated
◎Chip◎◎
◎ Category:．Hi-Power Semiconductor Device Dynamic Characteristic Tester．Medium-Power Semiconductor Device Dynamic Characteristic Tester．IGBT / VDMOS Static Characteristic Tester．IGBT / VDMOS / Diode On-State Tester Characteristic Tester．Gate Charge Tester．UIS Tester
Tester
Category: Ultra Fast Recovery Epitaxial Diode Discrete
Power Range: 200V~1200V / 8A~80A
Package: • TO-220, TO-220F • TO-247 • TO-3P
◎◎◎
Discrete
MACMIC design, manufacture, market, and sell energy-efficient power semiconductors ranging from chip, discrete, and a variety of power modules. MacMic products have been widely used in the applications from SMPS, Uninterrupted Power Supply, Power Factor Correction, Motor Drive, Welder, and Renewable Energy System.
Category:．Ultra Fast Recovery Epitaxial Diode Module．IGBT Module．Thyristor (SCR) Module．Rectifier Diode Module．Three-Phase Rectifier Bridge Module．Custom Specific Power Module
◎Module
Product Brief產品簡介
3
*IF=1A, diF/dt=-200A/us, VCC=30V
TC=25oC unless otherwise noted.
MM01A100A1
MM01A2A2G
MM01A6A2
MG01A12AC2
MM01A8B2
MG01A16AC2
MM01B10A2U
MM01A8A2
MG01A20AC2
MG01A19AC2
MM01A20BC2
MM01B20A2U
MM01A100A2
MM01D4A4G
MM01D8B4
MM01D8A4U
MG01D20AC4
MM01D8A4
MM01D10A4
MM01D15A4
MM01D15A4U
MM01B20A4U
MM01D30A4
MM01D30A4U
MM01D60A4
MM01B8B6GU
MM01J75A5
MM01D1A6
MM01D4A6G
MM01D8B6U
Type
100
200
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
400
400
400
400
400
400
500
500
600
600
600
(V)
VRRM trr @*
(ns)50
30
30
30
30
30
20
30
20
30
20
20
50
35
30
20
20
25
30
30
20
20
30
22
35
25
40
30
35
20
Die Size
(mm)6.6 x 6.6
0.93 x 0.93
1.45 x 1.45
2.0 x 2.0
1.65 x 1.65
2.23 x 2.23
2.54 x 2.54
1.8 x 1.8
3.66 x 3.66
2.39 x 2.39
3.88 x 3.88
2.4 x 4.8
6.6 x 6.6
1.36 x 1.36
1.8 x 1.8
2.15 x 2.15
4.25 x 4.25
2.15 x 2.15
2.4 x 2.4
3.0 x 3.0
3.0 x 3.0
2.4 x 4.8
5.5 x 3.0
5.5 x 3.0
5.54 x 5.54
1.6 x 1.6
6.6 x 6.6
1.04 x 1.04
1.36 x 1.36
1.8 x 1.8
Die Size
(mil)259.8S
36.6S
57.1S
78.7S
65.0S
87.8S
100S
70.9S
144.1S
94.1S
152.8S
94.5 x 189
259.9S
53.5S
70.9S
84.6S
167.3S
84.6S
94.5S
118.1S
118.1S
94.5 x 189
216.5 x 118.1
216.5 x 118.1
218.1S
63S
259.9S
40.9S
53.5S
70.9S
IFDuty Circle=0.5
TC=110oC
(A)100
2
6
6 x 2
8
8 x 2
10
10
10 x 2
10 x 2
12 x 2
20
100
5
9
10
10 x 2
12
15
18
18
20
35
35
70
8
100
1
4
7
VF@IF
(V)0.88
0.9
0.9
0.9
0.9
0.9
0.88
0.9
0.88
0.9
0.9
1.2
0.9
1.2
1.2
1.5
1.3
1.3
1.1
1.2
1.5
1.5
1.3
1.6
1.1
1.2
2.2
1
1.3
2
RANGES• 100V~1700V / 1A~200A
FEATURES• Very Short Recovery Time• Soft Recovery Characteristic• Low Reverse Recovery Charge• Low Leakage Current• Avalanche Energy Rated
Ultra-Fast Recovery Epitaxial Diode Chip快速回復二極體(FRED)晶片
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
TC=25oC unless otherwise noted.
*IF=1A, diF/dt=-200A/us, VCC=30V
MM01D8B6
MM01D8A6
MM01D10A6U
MM01D10A6
MM01D15A6
MM01D15A6U
MM01D30A6
MM01D30A6U
MM01D60A6
MM01J75A6
MM01D120A6
MG01J200A6
MM01D200A6
MM01D8A6U
MM01D8B7U
MM01D8A7U
MM01J75A7
MG01J200A7
MM01J75A8
MM01J1A12G
MM01J10A12U
MM01J15A12U
MM01J20A12U
MM01J30A12U
MM01J60A12U
MM01J75A12
MM01J100A12
MM01N75A17
MM01N100A17
Type
600
600
600
600
600
600
600
600
600
600
600
600
600
650
680
680
700
700
900
1200
1200
1200
1200
1200
1200
1200
1200
1700
1700
(V)
VRRM trr @*
(ns)30
30
20
30
30
20
30
22
35
40
40
60
60
20
20
20
40
60
35
100
25
25
25
25
30
45
45
80
80
Die Size
(mm)1.8 x 1.8
2.15 x 2.15
2.4 x 2.4
2.4 x 2.4
3.0 x 3.0
3.0 x 3.0
5.5 x 3.0
5.5 x 3.0
5.54 x 5.54
6.6 x 6.6
10.5 x 7.0
12 x 12
12 x 12
2.15 x 2.15
1.8 x 1.8
2.15 x 2.15
6.6 x 6.6
12 x 12
6.6 x 6.6
1.56 x 1.56
3.0 x 3.0
3.5 x 3.5
3.86 x 3.86
4.5 x 4.5
5.0 x 7.22
6.6 x 6.6
10.5 x 7.0
8.0 x 8.0
10.5 x 7.0
Die Size
(mil)70.9S
84.6S
94.5S
94.5S
118.1S
118.1S
216.5 x 118.1
216.5 x 118.1
218.1S
259.9S
413.3 x 275.6
472.4S
472.4S
84.6S
70.9S
84.6S
259.9S
472.4S
259.9S
61.4S
118.1S
137.8S
151.9S
177.1S
196.8 x 284.3
259.9S
413.4 x 275.6
315S
413.4 x 275.6
IFDuty Circle=0.5
TC=110oC
(A)8
9
10
12
15
15
30
30
60
100
120
190
200
8
6
8
100
180
100
1
10
15
20
30
60
75
100
75
100
VF@IF
(V)1.3
1.4
1.6
1.4
1.2
1.4
1.5
1.8
1.3
2.3
1.4
1.1
1.1
1.9
2.2
2.1
2.5
1.2
3.2
1.5
2.5
2.6
2.8
2.8
2.8
1.6
1.6
2
2
RANGES• 100V~1700V / 1A~200A
FEATURES• Very Short Recovery Time• Soft Recovery Characteristic• Low Reverse Recovery Charge• Low Leakage Current• Avalanche Energy Rated
Ultra-Fast Recovery Epitaxial Diode Chip快速回復二極體(FRED)晶片
5
*IF=1A, diF/dt=-200A/us, VCC=30V
**TO-247 and TO-3P are available
TC=25oC unless otherwise noted.
D92-02
MM60F020PC
MM60FU030PC
MM4204
MM30F040PC
MM80FU040PC
MM30F060PC
MM60F060PC
MM8F060K
MM8FU060K
MM15F060K1
MM15F060K
MM30FU060P
MM60F060P
MM60F060B
MM10FU120K
MM10F120K1
MM15FU120K
MM20FU120K
MM30FU120K
MM30F120B
MM60F120B
Type
200
200
300
400
400
400
600
600
600
600
600
600
600
600
600
1200
1200
1200
1200
1200
1200
1200
(V)
VRRM trr @*
(ns)17
22
22
22
30
22
30
30
30
17
30
30
30
40
40
22
30
25
25
27
30
35
RθJCPer Chip
(oC/W)1.5
0.8
0.8
1.5
1.1
0.8
1.1
0.8
3
2.5
2.0
1.5
0.8
0.5
0.5
1.8
2.5
2.5
2.5
1.2
1.1
0.5
IF(AV)Duty Circle=0.5
TC=110oC
(A)10 x 2
30 x 2
30 x 2
10 x 2
15 x 2
40 x 2
15 x 2
30 x 2
8
8
15
15
30
60
60
10
10
15
20
30
30
60
VFIF=IF(AV)
(V)0.9
0.86
1.1
1.0
1.0
1.3
1.3
1.5
1.3
1.8
1.3
1.3
1.5
1.3
1.3
2.4
2.1
2.6
2.6
2.6
2.15
2.8
Fig.No.
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-220
TO-220
TO-220F
TO-220
TO-3P
TO-3P
TO-247
TO-220
TO-220F
TO-220
TO-220
TO-220
TO-247
TO-247
InsideCircuit
C
C
C
C
C
C
C
C
D
D
D
D
D
D
D
D
D
D
D
D
D
D
PackageStyle
TO-3P(C circuit)
TO-220
TO-220F
TO-3P(D circuit)
TO-247 **
**
**
RANGES• 200V~1200V / 8A~80A
FEATURES• Short Recovery Time• Soft Recovery Characteristic• Low Reverse Recovery Charge• Low Leakage Current• Avalanche Energy Rated
C D
1 2 3 2 1
Ultra-Fast Recovery Epitaxial Diode Discrete快速回復二極體(FRED)分離器件
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
*diF/dt=-200A/us, TJ=125oC
**The module is B2B circuit inside.
TC=25oC unless otherwise noted.
MMF150N060B6B**
MMF100N120B**
MMF100S170B2B
MMF200S170B2B
MMF400S040B
MMF150S060B
MMF200S060B
MMF300S060B
MMF150S120B
MMF200S120B
MMF300S120B
MMF100S170B
MMF200S170B
MMF400S040DK
MMF300N060DK6B
MMF150S060DK
MMF200S060DK
MMF300S060DK
MMF200N070DK
MMF200N090DK
MMF200N120DK
MMF150S120DK
MMF200S120DK
MMF300S120DK
MMF100S170DK
MMF200S170DK
MMF1000Y010DK1
MMF400Z020DK1
Type
600
1200
1700
1700
400
600
600
600
1200
1200
1200
1700
1700
400
600
600
600
600
700
900
1200
1200
1200
1200
1700
1700
100
200
(V)
VRRM
1.15 150
1.77 100
2.37 100
2.37 200
1.55 400
1.60 150
1.60 200
1.65 300
1.80 150
1.80 200
1.80 300
2.37 100
2.37 200
1.55 400
1.15 150
1.60 150
1.60 200
1.65 300
1.55 100
1.60 100
1.77 100
1.80 150
1.80 200
1.80 300
2.37 100
2.37 200
1.00 500
0.95 200
VFM@IFM
(V) (A)
trr @*
(ns)200
250
300
310
250
180
200
220
250
250
250
300
310
250
200
180
200
220
180
190
250
250
250
250
300
310
300
112
RθJC
(oC/W)0.34
0.44
0.20
0.10
0.10
0.22
0.18
0.14
0.18
0.16
0.14
0.20
0.10
0.10
0.34
0.22
0.18
0.14
0.34
0.34
0.44
0.18
0.16
0.14
0.20
0.10
0.06
0.20
PackageStyle
IF(AV)Duty Circle=0.5
TC=110oC
(A)150 x 2
100 x 2
100 x 2
200 x 2
400 x 2
150 x 2
200 x 2
300 x 2
150 x 2
200 x 2
300 x 2
100 x 2
200 x 2
400 x 2
150 x 2
150 x 2
200 x 2
300 x 2
100 x 2
100 x 2
100 x 2
150 x 2
200 x 2
300 x 2
100 x 2
200 x 2
500 x 2
200 x 2
IFSMt=10ms
TJ=45oC
(V)1500
1100
1100
2200
4000
1500
2000
3000
1500
2000
3000
1100
2200
4000
1500
1500
2000
3000
1100
1000
1100
1500
2000
3000
1100
2200
5000
1800
Fig.No.
FN
FN
FS
FS
FS
FS
FS
FS
FS
FS
FS
FS
FS
FS
FN
FS
FS
FS
FN
FN
FN
FS
FS
FS
FS
FS
FY
FZ
InsideCircuit
B2B
B2B
B2B
B2B
B
B
B
B
B
B
B
B
B
DK
DK
DK
DK
DK
DK
DK
DK
DK
DK
DK
DK
DK
DK1
DK1
FN
FS
FY
FZ
RANGES• 100V~1700V / 60A~600A
FEATURES• Short Recovery Time• Soft-recovery Characteristics• Low Reverse Recovery Charge• Low Forward Voltage• Avalanche Energy Rated• Stressless Package
B2B
DK
B
2 1 31 2 3
1 2 3
DK1
1 2
Ultra-Fast Recovery Epitaxial Diode Module快速回復二極體(FRED)模組
7
*diF/dt=-200A/us, TJ=125oC
TC=25oC unless otherwise noted.
MMF200ZB040DK1
MMF200Y040DK1
MMF400Y040DK1
MMF300Y060DK1
MMF400S040DK2B
MMF150S060DK2B
MMF200S060DK2B
MMF300S060DK2B
MMF150S120DK2B
MMF200S120DK2B
MMF300S120DK2B
MMF100S170DK2B
MMF200S170DK2B
MMF300N060DA6B
MMF200N070DA
MMF200N090DA
MMF200N120DA
MMF100S170DA
MMF200S170DA
MMF100S170DA2B
MMF200S170DA2B
MMF300YB050U
MMF600SB060U
MMF200S170U
MMF400S170U
MMF2X100J040D
MMF2X100J060D
MMF2X60J070D
MMF2X100J120D
Type
400
400
400
600
400
600
600
600
1200
1200
1200
1700
1700
600
700
900
1200
1700
1700
1700
1700
500
600
1700
1700
400
600
700
1200
(V)
VRRM
1.10 100
1.10 100
1.10 200
1.10 150
1.55 400
1.60 150
1.60 200
1.65 300
1.80 150
1.80 200
1.80 300
2.37 100
2.37 200
1.15 150
1.55 100
1.60 100
1.77 100
2.37 100
2.37 200
2.37 100
2.37 200
1.20 300
1.65 600
2.37 200
2.37 400
1.10 100
1.20 100
1.57 60
2.10 100
VFM@IFM
(V) (A)
trr @*
(ns)150
150
210
220
250
180
200
220
250
250
250
300
310
200
180
190
250
300
310
300
310
340
250
320
350
150
190
130
200
RθJC
(K/W)0.20
0.15
0.06
0.06
0.10
0.22
0.18
0.14
0.18
0.16
0.14
0.20
0.10
0.34
0.34
0.34
0.44
0.20
0.10
0.20
0.10
0.11
0.075
0.20
0.10
0.30
0.30
0.60
0.60
PackageStyle
IF(AV)Duty Circle=0.5
TC=110oC
(A)100 x 2
100 x 2
200 x 2
150 x 2
400 x 2
150 x 2
200 x 2
300 x 2
150 x 2
200 x 2
300 x 2
100 x 2
200 x 2
150 x 2
100 x 2
100 x 2
100 x 2
100 x 2
200 x 2
100 x 2
200 x 2
300
600
200
400
100 x 2
100 x 2
60 x 2
100 x 2
IFSMt=10ms
TJ=45oC
(V)1500
1500
4000
3500
4000
1500
2000
3000
1500
2000
3000
1100
2200
1500
1100
1000
1100
1100
2200
1100
2200
5000
6000
1100
4400
1500
1500
600
1500
Fig.No.
FZ
FY
FY
FY
FS
FS
FS
FS
FS
FS
FS
FS
FS
FN
FN
FN
FN
FS
FS
FS
FS
FYB
FSB
FS
FS
FJ
FJ
FJ
FJ
InsideCircuit
DK1
DK1
DK1
DK1
DK2B
DK2B
DK2B
DK2B
DK2B
DK2B
DK2B
DK2B
DK2B
DA
DA
DA
DA
DA
DA
DA2B
DA2B
U
U
U
U
D
D
D
D
FN
FS
FY
FZ
FJ
FYB
RANGES• 100V~1700V / 60A~600A
FEATURES• Short Recovery Time• Soft-recovery Characteristics• Low Reverse Recovery Charge• Low Forward Voltage• Avalanche Energy Rated• Stressless Package
DK1
DA2B
DK2B
2 1 3
U
DA
D
1 2 1 2 3
2 31 1 3 2
1
3
4
Ultra-Fast Recovery Epitaxial Diode Module快速回復二極體(FRED)模組
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
TC=25oC unless otherwise noted
MMG75SR060B
MMG100SR060B
MMG100S060B6N
MMG150DR060B
MMG150S060B6N
MMG200DR060B
MMG200S060B6N
MMG200D060B6N
MMG300D060B6N
MMG400D060B6N
MMG450WB060B6N
MMG600WB060B6N
MMG50SR120B
MMG75SR120B
MMG75S120B6C
MMG100SR120B
MMG100DR120B
MMG100S120B6C
MMG100S120B6UN
MMG150DR120B
MMG200DR120B
MMG200D120B6UN
MMG300DR120B
MMG75SR060UA
MMG100SR060UA
MMG150DR060UA
MMG200DR060UA
MMG50SR120UA
MMG75SR120UA
MMG100SR120UA
Type
600
600
600
600
600
600
600
600
600
600
600
600
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
600
600
600
600
1200
1200
1200
(V)
VCESmin.
PDmax.
(W)625
625
500
1100
625
1100
735
833
1250
1400
1562
2080
500
630
630
690
830
690
690
1100
1400
1400
1800
625
625
1100
1100
500
630
690
EoffTJ=125oC
(mJ)3.5
3.5
3
7
4.6
7
6.3
7
10
14.5
17.5
21.9
5.8
7.8
8.2
10.8
10.8
12.2
5
15.6
21.6
8.5
30.6
3.5
3.5
7
7
5.8
7.8
10.8
RθJCmax.
(K/W)0.20
0.20
0.25
0.10
0.20
0.10
0.17
0.15
0.10
0.09
0.08
0.06
0.30
0.20
0.20
0.18
0.15
0.18
0.18
0.11
0.09
0.09
0.07
0.20
0.20
0.10
0.10
0.30
0.20
0.18
PackageStyle
GS
GD
GWB
G
G
InsideCircuit
ICTC=80oC
(A)75
100
100
150
150
200
200
200
300
400
450
600
50
75
75
100
100
100
100
150
200
200
300
75
100
150
200
50
75
100
VCE(sat)typ.
(V)1.7
1.9
2.1
1.7
1.95
1.9
1.95
1.95
1.95
1.95
1.95
1.95
1.8
1.8
3.2
1.8
1.8
3.2
3.2
1.8
1.8
3.2
1.9
1.7
1.9
1.7
1.9
1.8
1.8
1.8
Fig.No.
GS
GS
GS
GD
GS
GD
GS
GD
GD
GD
GWB
GWB
GS
GS
GS
GS
GD
GS
GS
GD
GD
GD
GD
GS
GS
GD
GD
GS
GS
GS
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
UA
UA
UA
UA
UA
UA
UA
RANGES• 600V~1200V / 25A~600A
FEATURES• Fast Switching Speed• Low Conduction Loss• Soft Turn-off Characteristic• Short Circuit Rated
B UA4(2G) 5(2E)
1(2E 1C)3(2C) 2(1E)
6(1G) 7(1E)
1(2A 1C)3(2K) 2(1E)
6(1G) 7(1E)
IGBT ModuleIGBT模組
9
TC=25oC unless otherwise noted
MMG150DR120UA
MMG200DR120UA
MMG75SR060UZA
MMG100SR060UZA
MMG150DR060UZA
MMG200DR060UZA
MMG50SR120UZA
MMG75SR120UZA
MMG100SR120UZA
MMG150DR120UZA
MMG200DR120UZA
MMG75SR060UK
MMG100SR060UK
MMG150DR060UK
MMG200DR060UK
MMG50SR120UK
MMG75SR120UK
MMG100SR120UK
MMG150DR120UK
MMG200DR120UK
MMG75SR060UZK
MMG100SR060UZK
MMG150DR060UZK
MMG200DR060UZK
MMG50SR120UZK
MMG75SR120UZK
MMG100SR120UZK
MMG150DR120UZK
MMG200DR120UZK
Type
1200
1200
600
600
600
600
1200
1200
1200
1200
1200
600
600
600
600
1200
1200
1200
1200
1200
600
600
600
600
1200
1200
1200
1200
1200
(V)
VCESmin.
PDmax.
(W)1100
1400
625
625
1100
1100
500
630
690
1100
1400
625
625
1100
1100
500
630
690
1100
1400
625
625
1100
1100
500
630
690
1100
1400
EoffTJ=125oC
(mJ)15.6
21.6
3.5
3.5
7
7
5.8
7.8
10.8
15.6
21.6
3.5
3.5
7
7
5.8
7.8
10.8
15.6
21.6
3.5
3.5
7
7
5.8
7.8
10.8
15.6
21.6
RθJCmax.
(K/W)0.11
0.09
0.20
0.20
0.10
0.10
0.30
0.20
0.18
0.11
0.09
0.20
0.20
0.10
0.10
0.30
0.20
0.18
0.11
0.09
0.20
0.20
0.10
0.10
0.30
0.20
0.18
0.11
0.09
PackageStyle
GS
GD
G
G
InsideCircuit
ICTC=80oC
(A)150
200
75
100
150
200
50
75
100
150
200
75
100
150
200
50
75
100
150
200
75
100
150
200
50
75
100
150
200
VCE(sat)typ.
(V)1.8
1.8
1.7
1.9
1.7
1.9
1.8
1.8
1.8
1.8
1.8
1.7
1.9
1.7
1.9
1.8
1.8
1.8
1.8
1.8
1.7
1.9
1.7
1.9
1.8
1.8
1.8
1.8
1.8
Fig.No.
GD
GD
GS
GS
GD
GD
GS
GS
GS
GD
GD
GS
GS
GD
GD
GS
GS
GS
GD
GD
GS
GS
GD
GD
GS
GS
GS
GD
GD
UA
UA
UZA
UZA
UZA
UZA
UZA
UZA
UZA
UZA
UZA
UK
UK
UK
UK
UK
UK
UK
UK
UK
UZK
UZK
UZK
UZK
UZK
UZK
UZK
UZK
UZK
UZK4(2G) 5(2E)
1(2E 1K)3(2C) 2(1A)
RANGES• 600V~1200V / 25A~600A
FEATURES• Fast Switching Speed• Low Conduction Loss• Soft Turn-off Characteristic• Short Circuit Rated
UZA
UK
UA
1(2A 1C)3(2K) 2(1E)
6(1G) 7(1E)
1(2A 1C)3(2K) 2(1E)
6(1G) 7(1E)
4(2G) 5(2E)
1(2E 1K)3(2C) 2(1A)
IGBT ModuleIGBT模組
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
TC=25oC unless otherwise noted
MMG75SR060DE
MMG100SR060DE
MMG150DR060DE
MMG200DR060DE
MMG50SR120DE
MMG75SR120DE
MMG100SR120DE
MMG150DR120DE
MMG200DR120DE
MMG400KR060U
MMG50J120U
MMG75J120U
MMG400K120U
MMG600K120U
MMG25H120X6TN
MMG50H120X6TN
MMG75H120X6TN
MMG100W120X6TN
MMG150W120X6TN
MMG25H120XB6TN
MMG40H120XB6TN
MMG50W120XB6TN
MMG75W120XB6TN
MMD75HB160UX6TN
MMD100HB160UX6TN
MMD150HB160UX6TN
MMG75J120UZ
MMG100J120UZ
Type
600
600
600
600
1200
1200
1200
1200
1200
600
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
1200
(V)
VCESmin.
PDmax.
(W)625
625
1100
1100
500
630
690
1100
1400
2083
500
630
2780
3125
100
270
350
480
700
100
210
270
350
625
700
830
625
690
EoffTJ=125oC
(mJ)3.5
3.5
7
7
5.8
7.8
10.8
15.6
21.6
14
5.8
7.8
43.2
61.2
2.9
5.8
8.1
10.0
14.5
2.9
4.1
5.8
9.4
5
6.8
9.8
7.8
10.8
RθJCmax.
(K/W)0.20
0.20
0.10
0.10
0.30
0.20
0.18
0.11
0.09
0.06
0.30
0.20
0.045
0.04
1.20
0.45
0.35
0.26
0.18
1.20
0.60
0.45
0.35
0.20
0.18
0.15
0.2
0.18
PackageStyle
GK
GJ
GH
GW
GS
GD
InsideCircuit
ICTC=80oC
(A)75
100
150
200
50
75
100
150
200
420
50
75
400
600
25
50
75
100
150
25
40
50
75
75
100
100
75
100
VCE(sat)typ.
(V)1.7
1.9
1.7
1.9
1.8
1.8
1.8
1.8
1.8
1.9
1.8
1.8
1.9
1.9
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.8
1.8
1.8
1.8
1.8
Fig.No.
GS
GS
GD
GD
GS
GS
GS
GD
GD
GK
GJ
GJ
GK
GK
GH
GH
GH
GW
GW
GH
GH
GW
GW
GH
GH
GH
GJ
GJ
DE
DE
DE
DE
DE
DE
DE
DE
DE
U
U
U
U
U
X
X
X
X
X
XB
XB
XB
XB
UX
UX
UX
UZ
UZ
UZ
X
UX
U
XB
DE4(2G) 5(2E)
2(2E 1E)3(2C) 1(1C)
6(1G)7(1E)
1
2
53
1
4
32
RANGES• 600V~1200V / 25A~600A
FEATURES• Fast Switching Speed• Low Conduction Loss• Soft Turn-off Characteristic• Short Circuit Rated
IGBT ModuleIGBT模組
11
TC=25oC unless otherwise noted
Thyristor (SCR) Module晶閘管(SCR)模組
MMK40A160B
MMK60A160B
MMK90A160B
MMK110A160B
MMK130S160B
MMK160S160B
MMK40A160UA
MMK60A160UA
MMK90A160UA
MMK110A160UA
MMK130S160UA
MMK160S160UA
MMK40A160UK
MMK60A160UK
MMK90A160UK
MMK110A160UK
MMK130S160UK
MMK160S160UK
MMK75U160UX
MMK100U160UX
MMK150T160UX
MMK200T160UX
Type Fig.No.
KA
KA
KA
KA
KS
KS
KA
KA
KA
KA
KS
KS
KA
KA
KA
KA
KS
KS
KU
KU
KT
KT
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
1600
VRRMVDRM
(V)
IT(AV)IF(AV)
TC=85oC
(A)40
60
90
110
130
160
40
60
90
110
130
160
40
60
90
110
130
160
75
100
150
200
VTM@ITM
(V) (A)1.81 141
1.54 188
1.60 282
1.64 345
1.57 408
1.54 502
1.81 141
1.54 188
1.60 282
1.64 345
1.57 408
1.54 502
1.81 141
1.54 188
1.60 282
1.64 345
1.57 408
1.54 502
1.50 280
1.54 312
1.54 502
1.54 628
RθJC
(K/W)0.50
0.45
0.35
0.30
0.20
0.18
0.50
0.45
0.35
0.30
0.20
0.18
0.50
0.45
0.35
0.30
0.20
0.18
0.35
0.30
0.18
0.15
PackageStyle
KA
KS
KU
KT
InsideCircuit
B
B
B
B
B
B
UA
UA
UA
UA
UA
UA
UK
UK
UK
UK
UK
UK
UX
UX
UX
UX
RANGES• 1600V / 40A~200A
FEATURES• Compact Design• High Current Capability• High Blocking Voltage• High Reliability• High Performance Price Ratio
2
5 4 7 6
1 3
2
5 4
1 3
2
7 6
1 3
R2 G
~R~S~T
B
UA UX
UK
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
* Use MMD90A120DK for DK circuit, the same for all other B Circuit modules.
TC=25oC unless otherwise noted
MMD90A120B*
MMD90A140B
MMD90A160B
MMD90A180B
MMD110A120B
MMD110A140B
MMD110A160B
MMD110A180B
MMD130S120B
MMD130S140B
MMD130S160B
MMD130S180B
MMD160S120B
MMD160S140B
MMD160S160B
MMD160S180B
MMD180S120B
MMD180S140B
MMD180S160B
MMD180S180B
MMD200S120B
MMD200S140B
MMD200S160B
MMD200S180B
Type
DA
DA
DS
DS
DS
DS
Fig.No.
B/DK
B/DK
B/DK
B/DK
B/DK
B/DK
InsideCircuit
1200
1400
1600
1800
1200
1400
1600
1800
1200
1400
1600
1800
1200
1400
1600
1800
1200
1400
1600
1800
1200
1400
1600
1800
VRRM
(V)
90
110
130
160
180
200
IF(AV)TC=85oC
(A)
2000
2500
3500
5000
6000
7000
IFSMt=10ms
TJ=45oC
(A)
1.33 200
1.30 200
1.25 300
1.25 350
1.23 400
1.30 500
VFM@IFMTJ=125oC
(V) (A)
0.36
0.30
0.20
0.18
0.17
0.16
RθJC
(K/W)
PackageStyle
DA
DS
RANGES• 1200V~1800V / 90A~200A
FEATURES• Compact Design• High Current Capability• High Blocking Voltage• High Reliability• High Performance Price Ratio
2 1 3 2 1 3
B DK
Rectifier Diode Module整流二極體模組
13
TC=25oC unless otherwise noted
MMD70E120XMMD70E140XMMD70E160XMMD70E180XMMD100E120XMMD100E140XMMD100E160XMMD100E180XMMD150F120XMMD150F140XMMD150F160XMMD150F180XMMD200F120XMMD200F140XMMD200F160XMMD200F180XMMD250F120XMMD250F140XMMD250F160XMMD250F180XMMD100EB120XMMD100EB140XMMD100EB160XMMD100EB180XMMD150FB120XMMD150FB140XMMD150FB160XMMD150FB180XMMD200FB120XMMD200FB140XMMD200FB160XMMD200FB180X
Type
DE
DE
DF
DF
DF
DEB
DFB
DFB
Fig.No.
12001400160018001200140016001800120014001600180012001400160018001200140016001800120014001600180012001400160018001200140016001800
VRRM
(V)
70
100
150
200
250
100
150
200
Id(AV)TC=100oC
(A)
700
1000
1500
2000
2500
1000
1500
2000
IFSMt=10ms
TJ=45oC
(A)
1.33 150
1.40 200
1.56 300
1.51 300
1.43 300
1.40 200
1.56 300
1.51 300
VFM@IFMTJ=125oC
(V) (A)
0.18
0.15
0.10
0.09
0.08
0.15
0.10
0.09
RθJC
(K/W)
PackageStyle
DE
DF
DFB
DEB
RANGES• 1200V~1800V / 70A~250A
FEATURES• Compact Design• High Current Capability• High Blocking Voltage• High Reliability• High Performance Price Ratio
~C
B-
A+
~D
~E
Three-Phase Rectifier Bridge Module三相整流橋模組
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
．Tested Devices: IGBT, VDMOS, Diode
．UIS Range: 0~50J
．Test Range: 0~1200V / 0~200A
．Display: Waveform Display on Oscilloscope
Power Semiconductor UIS Tester◎
．Tested Devices: IGBT, VDMOS
．Test Parameters: Vges, Iges, Vge(th),Vces, Ices
．Test Range: Vges (± 20V), Iges (100uA), Vces (2000V), Ices (20mA)
．Test Accuracy: < ± (2~5)%
IGBT / VDMOS Static Characteristic Tester◎
．Tested Devices: IGBT, VDMOS, Diode
．Test Parameters: Vce(sat), Rds(on), Vf
．Test Range: 600V / 10A
．Test Accuracy: < ± 3%
IGBT / VDMOS / Diode On-State Characteristic Tester◎
．Tested Devices: IGBT, VDMOS
．Test Range: 2000V / 500A
Vge (0~20V), Tg (0~200ms), Ig (0~50mA)
．Display: Waveform Display on Oscilloscope
Gate Charge Tester◎
．Tested Devices: IGBT, VDMOS, Diode
．Test Parameters: Td(on), Tr, Td(off), Tf, Trr, Qrr
．Test Range: 1200V / 400A / 200oC
．Display: Waveform Display on Oscilloscope
Hi-Power Semiconductor Device Dynamic Charactertistic Tester◎
Power Semiconductor Device Tester電力半導體器件測試儀器
15
FN FS
FZ
FYB
FY
FJ
M635
17
3
80
92
24 27Ø6.2
M635
179
80
93
20
Ø4.6
Ø6.5
M630
22
3
67
52
80
R3.2
1
40 42
M4
12.8
38
1530.2
26.5
12.7Ø4.2Ø4.2
M5
17
7
8026
2394
23
Ø5.3
Ø6.
58.
5
M6
30.5
23
80
34
9423 23
Outline Drawing -FRED Module快速恢復二極體 模組
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
GS GD
GWB
GH
GK
GW
M52.8x0.5
29.5
2330.5
8.5
80
94
174.
54.
5
23 23 17
34Ø
6.5
M62.8x0.5
30 30.5
8.5
Ø6.5
156
626
10828 28 20
18
1648
22 693
M4 M6
36.1
24.2
8.5
25
93
4820
20
62
24 20 29 17.5108
1720.5
15.9
3.50.6
1.1Ø2.5
20.915.211.47.607.6215.2420.95
31.2
35 42.7
46.5
54.1
57.9
365
.569
.373
.177 80
.800
86.1
38.86.9
93107.5
Ø2.1
45 32 115.
5
20.5
17
3.5
7
11.511.5
5.5
54.2
38.434.530.726.923.119.315.411.6
04.2
62 57 50
004
15 18.8
30.2
34 45.4
49.2
60.7
64.5
76 79.7
91.1
95
13.1
16.9
28.3
32.1
47.4
51.2
66.4
70.2
81.6
85.5
89.3
93.1
97
12211094.5
176.5
10.5
12.5
20.8
Ø4.5Ø2.5Ø2.1
13712211099
94.5
M6
22
62 57.5
39 50
1529.5
3.8 5.5
58.4
36.23.813.3
40
3.8
Outline Drawing -IGBT ModuleIGBT模組系列
17
GJ
KA
KU
KS
KT
M52.8x0.8
29.1
30.4
8.5
80
93
2117
2015.6 20 15
Ø6.5
M62.8x0.5
30.5
29.5
23
8.5
80
94
4.5
4.5
17
172323
34Ø
6.5
M4 M6
5.524.3
93108
22224121
8414862
222235.5
M5
2215
.8
8.3
80
94
30
202029
32
Ø6.5
345018
11 2.8
0.8
M4
12.8
38
1530.2
26.5
12.7Ø4.2Ø4.2
Outline Drawing -Thyristor (SCR) Module晶閘管(SCR)模組系列
宏微科技有限公司MACMIC SCIENCE & TECHNOLOGY CO., LTD.
DA
DE
DEB
DS
DF
DFBM6
173
25.4 25.4
6.5
2754
24.2728094
M5
30.5
3
54
72
2360
20 20
4221.6
Ø5.
3
M5
30.4
8.5
80
93
17 21
202015.6
Ø6.5
M6
2330.5
8.5
80
94
Ø6.5
34
2323
30.3
M6
3
26 26
6.5
2754
25728094
M5
22.2
21
58.5
306682
2042
20 20
Ø5.
5
Outline Drawing -Rectifier Module整流橋模組系列
HEADQUARTERS
INTERNATIONAL BUSINESS OFFICE
The total production process is controlled by ISO9001 quality assurance system. Every production step is strictly checked and tested to ensure the quality and stability of the products.
MACMIC SCIENCE & TECHNOLOGY CO., LTD.
Power for the Better
R&D CENTER
INTERNATIONALBUSINESS OFFICE
HEADQUARTERS6 OFFICES in CHINA
ENERGY PRODUCTAGENCY, USA