malvino electronic principles sixth edition. chapter 6 bipolar transistors

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MALVINO Electroni c PRINCIPLES SIXTH EDITION

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Page 1: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

MALVINO

ElectronicPRINCIPLES

SIXTH EDITION

Page 2: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Chapter 6

Bipolar Transistors

Page 3: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

COLLECTOR (medium doping)

BASE (light doping)

EMITTER (heavy doping)

N

P

N

The bipolar junction transistor has 3 doped regions.

Page 4: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

N

P

N

VCE

VCC

RC

RB

VBB

VBE

In a properly biased NPN transistor, the emitter electrons diffuse into the base and then go on to the collector.

Page 5: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Conventional flow Electron flow

IC

IB

IE

IC

IB

IE

IE = IC + IB IC IE IB << IC

dc = IC

IE

dc = IC

IB

Page 6: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

VCE

VCC

RC

RB

VBB

VBE

The common emitter connection has two loops:the base loop and the collector loop.

Page 7: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Subscript notation

• When the subscripts are the same, the voltage represents a source (VCC).

• When the subscripts are different, the voltage is between two points (VCE).

• Single subscripts are used for node voltages with ground serving as the reference (VC).

Page 8: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

VCE

VCC

RC

RB

VBB

VBE

The base circuit is usually analyzed with the same approximation used for diodes.

IB =VBB - VBE

RB

Page 9: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

0 2 4 6 8 10 12 14 16 18

2468

101214

VCE in Volts

IC in mA

A graph of IC versus VCE

20 A

0 A

100 A

80 A

60 A

40 A

(Note that each new value of IB presents a new curve.)

This set of curves is also called a family of curves.

Page 10: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Regions of operation

• Cutoff - - - used in switching applications

• Active - - - used for linear amplification

• Saturation - - - used in switching applications

• Breakdown - - - can destroy the transistor

Page 11: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Transistor circuit approximations

• First: treat the base-emitter diode as ideal and use IB to determine IC.

• Second: correct for VBE and use IB to determine IC.

• Third (and higher): correct for bulk resistance and other effects. Usually accomplished by computer simulation.

Page 12: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

dcIB VCEVBE = 0.7 V

The second approximation:

Page 13: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

VCC

RC

RB

VBB

VBE = 0.7 V

IB =VBB - VBE

RB

IB =5 V - 0.7 V

100 k

5 V

100 k

= 43 A

Page 14: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

VCC

RC

RB

VBB 5 V

100 k

IB = 43 A

dc = 100

IC = dc IB

IC = 100 x 43 A = 4.3 mA

Page 15: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

VCC

RC

RB

VBB 5 V

100 k

IB = 43 A

IC = 4.3 mA

1 k

12 V

VRC = IC x RC

VRC = 4.3 mA x 1 k= 4.3 V

Page 16: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

VCC

RC

RB

VBB 5 V

100 k

IB = 43 A

IC = 4.3 mA

1 k

12 V

VCE = VCC - VRC

VCE

VCE = 12 V - 4.3 V = 7.7 V

Page 17: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Typical Breakdown Ratings

• VCB = 60 V

• VCEO = 40 V

• VEB = 6 V

• Note: these are reverse breakdown ratings

Page 18: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

0

2468

101214

VCE in Volts

IC in mA

50

A graphic view of collector breakdown

Page 19: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Typical Maximum Ratings

• IC = 200 mA dc

• PD = 250 mW (for TA = 60 oC)

• PD = 350 mW (for TA = 25 oC)

• PD = 1 W (for TC = 60 oC)

Page 20: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Typical “On Characteristics”

IC in mA hFE(min) hFE(max)

0.1 40 ___

1 70 ___

10 100 300

50 60 ___

100 30 ___

Page 21: MALVINO Electronic PRINCIPLES SIXTH EDITION. Chapter 6 Bipolar Transistors

Troubleshooting

• Look for gross voltage errors.

• First approximation and mental estimates will usually suffice.

• Resistors don’t short but circuit boards can.

• Circuit boards can and do open.

• Junctions can and do short.

• Junctions can and do open.