marx generator for the new hrr pulse power supply
DESCRIPTION
MARX GENERATOR FOR THE NEW HRR PULSE POWER SUPPLY. M.J. Barnes and L. Redondo (Lisbon Superior Engineering Institute, Portugal). Luís Redondo ( [email protected] ). Some highlights : PhD in Electric and Computing Engineering, from the Technical University of Lisbon, Portugal ; - PowerPoint PPT PresentationTRANSCRIPT
CLIC RF Breakdown Meeting 1
MARX GENERATOR FOR THE NEW HRR PULSE POWER SUPPLY
M.J. Barnes and L. Redondo (Lisbon Superior Engineering Institute, Portugal)
13/05/2014
CLIC RF Breakdown Meeting 2
Some highlights:• PhD in Electric and Computing Engineering, from the Technical University of Lisbon,
Portugal;• Master degree in Nuclear Physics, Faculty of Sciences from the University of Lisbon;• Coordinator Professor, Lisbon Engineering Superior Institute; • Currently supervising 4 PhD students and 6 Masters students;• Elected member of the IEEE Nuclear and Plasma Sciences Society NPSS, Standing
Technical Committee for Pulsed Power Science and Technology, PPS&T, from 2011 to 2016;
• Five Technology and Science Portuguese Foundation grants, totalling €157k (Sept. 2008 till March 2014): main goal of this project was to develop a solid state ‐modulator with energy recovery for the CERN ISOLDE facility;
• Luis Redondo, Fernando A. Silva, in Muhammad Rashid et al, editors: Power Electronics Handbook 3ed, 2010, Butterworth Hinemann Publishing, Elsevier, ISBN # ‐9780123820365, chapter 26, pp 669 710;‐
• Considerable experience/expertise in Power Electronics and Marx Generators;• Co founder, in 30 November 2011, of the company Energy Pulse Systems, ‐
www.energypulsesystems.com, which develops, assembles and sells solid state ‐modulators for various (normally industrial) applications.
Luís Redondo ([email protected])
13/05/2014
Present HRR System
Reliability issues: occasional failure of Behlke switch. Probably due to turning off high current following a BD [trigger to switch-on is increased in duration for 3 µs from the instant of a BD – but a turn-off command can have been sent ≤200 ns before the BD …..].
Limitations – no active pull down at present (23 µs fall time-constant 250 ns to 99%: 0.9930=0.74); system could be modified to include active pull-down, but same reliability issues – so better to explore other possibilities (e.g. Marx Generator)
12kV
Charging Resistor 4k7 W
Matching resistor
50W
Diode
PFL:Td=2000ns
Z0=50W
Fast Switch:Behlke:
HTS-181-25-B
.
Coax Cable:Z0=50W
Matching Resistor
50W
d.c. spark system
Sample
tipBleed resistor80kW
Supply Section Pulse Generator Section
CT: Bergoz:CT-D0.5-B
Filter capacitor
4.7nF
Sample voltage without BD (right) and measured current following BD at 12 kV (left)
The measured voltage rise-time is less than 55 ns (10% - 90%) and the voltage reduces below 1% of the applied voltage within 100 µs .
The measured current has a 2 µs "flat top" of ~120A and a rise time of 14 ns (10% - 90%). The estimated inductance, based on the 14 ns rise-time, is approximately 320 nH.
13/05/2014 CLIC RF Breakdown Meeting 3
CLIC RF Breakdown Meeting 4
Principle of Marx Generator (1)A Marx generator is an electrical circuit first described by Erwin Otto Marx in 1924. Its purpose is to generate a high-voltage pulse from a low-voltage DC supply.
The circuit generates a high-voltage pulse by charging a number of capacitors in parallel, then subsequently connecting them in series. This is illustrated below for a 5 stage Marx.1a) All the odd numbered MOSFETs/IGBTs (i.e. M1, M3, M5, …) are off.1b) The capacitors (C1, C2 , … C5) are charged in parallel, from Vdc, by turning on all the even numbered MOSFETs/IGBTs (i.e. M2, M4, M6, …) [Vmarx ≈ 0 V]:
Vdc
D2
C1 VMarxC2
D1
M1 M3
M2 M4
D3
C3
M5
M6
D4
C4
M7
M8
D5
C5
M9
M10
Out+
gate1
gate2
+
-
13/05/2014
Stored energy: 21
2 n dcnC V
CLIC RF Breakdown Meeting 5
Principle of Marx Generator (2)The circuit generates a high-voltage pulse by charging a number of capacitors in parallel, then subsequently connecting them in series. This is illustrated below for a 5 stage Marx.2a) Capacitors C1, C2 , … C5 have been charged to Vdc in step (1b). All the even numbered MOSFETs/IGBTs (i.e. M2, M4, M6, …) are then turned off.2b) All the odd numbered MOSFETs/IGBTs (i.e. M1, M3, M5, …) are then turned on, to connect the capacitors in series. VMARX ≈ 5Vdc
Vdc
D2
C1 VMarxC2
D1
M1 M3
M2 M4
D3
C3
M5
M6
D4
C4
M7
M8
D5
C5
M9
M10
Out+
gate1
gate2
+
-
13/05/2014
Load voltage: Marx dcV nV
Example of Each StageThe following circuit has been implemented, by Luis Redondo, using MOSFETs (in each charge stage [M2] and pulse stage [M1] two parallel MOSFETs are used).
Vcc bank capacitor of IXRFD630:- 2 tantalum capacitors of 4.7uF, MULTICOMP, CB1H475M2DCB;- 2 ceramic capacitors of 0.47uF, KEMET, C322C474M5U5TA;- 2 ceramic capacitors of 0.1uF, AVX, AR205F104K4R*;- 2 ceramic capacitors of 0.01uF, AVX, AR205F103K4R*;- 2 ceramic capacitors of 0.001uF, AVX, AR205F102K4R*.
Other capacitors in circuit:- 10uF tantalum capacitors , AVX, TAP106M035CCS;- 100pF ceramic capacitors , AVX, AR211A101K4R;- 470pF ceramic capacitors , AVX,12067A471JAT2A.
All capacitors with the same capacitance have a same reference.
D - Power diodes of STMicroelectronics – STTH1512G-TRDr - ultra-fast diodes of Vishay – BYG22D-E3/TR
Optic fibre 1HFBR-2521Z
7805+18 V +5 V
IXRFD6301
10uF 330nF 330nF
0.1uF
DE475-102N21A
DE475-102N21A
Optic fibre 2HFBR-2521Z
7805+15 V +5 V
IXRFD6302
330nF 330nF
0.1uF
DE475-102N21A
DE475-102N21A
220nF
R1010uF 10uF
1MΩ
TC1410
TC1410
High frequency inverter50 kHz
D
D
D
4:20
MC7805CDTGON Semiconductor
1 IN
GND
2
OUT 3
MC7815CDTGON Semiconductor
1 IN
GND
2
OUT 3
AVAGOTechnologies
1
2
3
4
DATA
DATA
+5V
GND
AVAGOTechnologies
1
2
34
DATA
DATA
+5V
GND
Dr
Dr
Dr
Dr+
+ + +
+ + +
+ + +
+ + +
1
2
3
4
8
7
6
5GND GND
NC
IN
VDD VDD
OUT
OUT
Microchip
1
2
3
4
8
7
6
5GND GND
NC
IN
VDD VDD
OUT
OUT
Microchip
VCC
VCC
IN
GND
GND
OUT
+ +
GND
GND
GND
GND
Gate Drain
GND
GND
GND
GND
Gate Drain
GND
GND
GND
GND
Gate Drain
GND
GND
GND
GND
Gate Drain
VCC
VCC
IN
GND
GND
OUT
AK
A
K
A
K
A
K
220nF 220nF
94
0C1
2P2
2K
-FC
DE
Co
rne
ll D
ubi
lier
GND1GND1
GND1
GND1
GND1
GND1
GND2
GND2
GND2
GND2
GND2
GND2
GND2
78151
IN
GND
2
OUT3
MC7805CDTGON Semiconductor
R220
Vcc=+15 V
Z15 V
In-
In+
Out+
Out-
gate1
gate2
M1
M2
D1
Note: modular design so that, in case of failure of a component, a card can be replaced.
13/05/2014 CLIC RF Breakdown Meeting 6
Commercial unit: EPULSUS-PM1-10Typical 10 kV / 62.5 A pulse waveform on a 160 Ω resistor: 26 μs width pulse and 100 Hz repetition rate.
Commercial unit characteristics:• Standard galvanised steel enclosure, 800x600x400 mm, 80 kg;• Mains input 220-240 V cable supplied;• Output cable;• Output Ethernet plug for optional control available;• BNC for monitoring the output voltage pulse available;• Touch screen for programming output voltage, frequency and pulse width, and for monitoring ;• Safety interlocks and reset condition after power on• Overcurrent protection;• Series 2.2 Ω resistance for increasing overall output stability and short-circuit protection.
13/05/2014 CLIC RF Breakdown Meeting 7
CLIC RF Breakdown Meeting 8
Example Waveforms. Waveforms from: 1 kHz, IGBT based, modulator into a 250 pF load, using a 10 kV/180 A (3.5 kW, single phase) commercial modulator at Energy Pulse Systems.
13/05/2014
CLIC RF Breakdown Meeting 9
Estimate….The estimated budget for a modulator, for the CLIC RF tests, is between 5000 € and 6000 €: to be confirmed when specifications are agreed upon.
For this project the modulators should be supplied via Energy Pulse Systems, as materials and human capability are not available in the institute (only available for small prototypes and concept validation).
With the specifications agreed and material ordered, in principle a (CE marked) modulator would be delivered in 1-2 months.
Suggestion: Mike (et al.?) visit Luis, in Lisbon, for 1 day.
13/05/2014
CLIC RF Breakdown Meeting 10
Questions….
13/05/2014
a) Maximum capacitance to be driven ?b) 10 kV flattop ?c) In the case of no BD, 1 kHz rep-rate,?d) Importance of rise-fall time (given E30) ? [with such a strong dependency on field
strength (e.g. 0.9930 = 0.74, 0.9830 = 0.55 and 0.930=0.04), the rise and fall times might not have a significant effect…. [But, given the same strong dependency upon E, it is important to avoid overshoot (e.g. 1.0530=4.3 and 1.0130=1.35)]];
e) Acceptable voltage droop during flattop (capacitive load) ?;f) Required “squareness” of current pulse following a breakdown ?g) Requirements for pulse flattop duration and flatness (e.g. dark current
measurements?);h) Others ??
For RF BD group:
From RF BD group…