mb39a105evb-02 · 2004-05-20 · fujitsu assp product power management 3/23 mb39a105evb-02...

Fujitsu ASSP Product

1/23Power Management

MB39A105EVB-02 Evaluation Board Rev 1.0

Rev 1.0EApril, 2003

MB39A105EVBMB39A105EVB--0202

Evaluation board ManualEvaluation board Manual




MB39A105 Evaluation board MB39A105 Evaluation board

1. 1. EVALUATION BOARD DESCRIPTIONEVALUATION BOARD DESCRIPTION2. 2. EVALUATION BOARD SPECIFICATIONSEVALUATION BOARD SPECIFICATIONS3. 3. TERMINAL DESCRIPTIONTERMINAL DESCRIPTION4. 4. SWITCH DESCRIPTIONSWITCH DESCRIPTION5. 5. SETUP AND CHECKUPSETUP AND CHECKUP6. 6. COMPONENT LAYOUTCOMPONENT LAYOUT7. 7. CONNECTION DIAGRAMCONNECTION DIAGRAM8. 8. PARTS LIST PARTS LIST 9. 9. INITIAL SETTINGSINITIAL SETTINGS10. 10. REFERENCE DATAREFERENCE DATA11. 11. COMPONENT SELECTION METHODSCOMPONENT SELECTION METHODS12. 12. ORDERING INFORMATIONORDERING INFORMATION

MB39A105EVBMB39A105EVB--02 type 02 type




1. 1. EVALUATION BOARD DESCRIPTIONEVALUATION BOARD DESCRIPTION

MB39A105EVB-02 is surface mounting circuit board of three system output by which a high voltage and the negative voltage output voltage of a low load are added. When MB39A105 was used, it added the charge pump circuit for the LCD panel.

Vo-2 and Vo-3 are output according to the output voltage of Vo-1. If an optional Zener diode is newly added to ZD1-4, a setting voltage can be adjusted.




2.2. EVALUATION BOARD SPECIFICATIONSEVALUATION BOARD SPECIFICATIONS

Input voltageOscillation frequencyOutput voltage 9.0

Output current 120

Output ripple voltage 180

2.4500

3.3. TERMINAL DESCRIPTIONTERMINAL DESCRIPTION

Symbol Descriptions

1 VIN Source and IC driving power-supply terminal

Main GND terminalSGND

4 Vo-1,2,3

Power supply control terminal

VCTL = 0V to 0.4V : Standby modeVCTL = 1.3V to VIN : Operation mode

2

3 PGND1,2

CTL

Output terminal

5

DC/DC converter GND terminal

Soft-start time 10Short-circuit detection time 50

Min Typ Max Unit3.3 4.0 V

kHz400 600

V8.8 9.2

250mA

200

mV--msms

6.1 20.416.9 137.5

VB6 Vo-2 Output voltage setting terminal

Vo-1Vo-2Vo-3

Vo-3Vo-2Vo-1

5-2

25-6.5

--

--

--

--




4.4. SWITCH DESCRIPTIONSWITCH DESCRIPTION

SWITCH FUNCTION ON OFF

SW1 Power supply control L (Standby)H (Operating)

(1) Setup

• Power-supply terminals into the VIN and GND terminals.

• Connect the OUT terminal to a required loading device or measuring instrument.

• Set SW1 to OFF.

(2) Checkup

• Set SW1 to ON to supply power to the VIN terminal. When the output voltage is Vo-1=9V(Typ), Vo-2=25V(5mA),and Vo-3=-6.5V(-2mA),the IC is operating normally.

5.5. SETUP AND CHECKUPSETUP AND CHECKUP




6.6. COMPONENT LAYOUTCOMPONENT LAYOUT

On-board Component Layout




Board Layout

Top Side

Bottom Side




VIN

(V)

P-G

ND

1 2 3 45678

P-G

ND

M1

Q1

MB3

9A10

5FB

CSC

P

VCC

SCPO

D

-INE

RT

GN

D

OU

T

Vo-3

(-V)

S-G

ND

CTL

Vo-1

(V)

Vo-2

(V)

C1

C2

(C3)

C4

C5

C6

C7C8

C9

C10 C

11

C12

C13C14

C15

C16

C17

C19

C20

R1

R2

R3 R4

R5 R

6

R7R

8

R13

R9

R10 R

11

R12

Q3

Q2

D1

D2

D3

(ZD

1)

D4

(ZD

2)(Z

D3)

(ZD

4)

L1

R14

VIN

(SW

1)

VB

R15

(C18

)

7.7. CONNECTION DIAGRAMCONNECTION DIAGRAM




8.8. PARTS LISTPARTS LISTPart No. Part name Specification Manufacturer Package Model name NoteM1 IC MB39A105 FUJITSU FPT-08P-M05 MB39A105PFVQ1 P-ch FET VDS=-20V,ID=4A(Max) SANYO MCPH6 MCH6305Q2,3 N-ch FET VDS=20V,Qg=8.7nC(Typ) SANYO MCPH6 MCH6401D1 Diode VF=0.40V(Max),at IF=1A SANYO CPH3 SBS004D2,3,4 Diode VF=0.44V(Max),at IF=0.1A Origin 3216type F01JD2EZD1 Zener Diode Not mountedZD2 Zener Diode Not mountedZD3 Zener Diode Not mountedZD4 Zener Diode Not mountedL1 Inductor 6.2uH,DCR=62mΩ,1.49A TOKO D62LCB A918CY-6R2MC1 NeoCapacitor 4.7uF(10V) NEC/TOKIN 3225type TEPSLA21A475M8RC2 NeoCapacitor 4.7uF(10V) NEC/TOKIN 3225type TEPSLA21A475M8RC3 Not mountedC4 Ceramic condenser 0.22uF(16V) TDK 1608type C1608JB1C224KC5 Ceramic condenser 1uF(16V) TDK 2012type C2012JB1C105KC6 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC7 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC8 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC9 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC10 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC11 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC12 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC13 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC14 Ceramic condenser 0.1uF(50V) TDK 1608type C1608JB1H104KC15 NeoCapacitor 4.7uF(10V) NEC/TOKIN 3225type TEPSLA21A475M8RC16 NeoCapacitor 4.7uF(10V) NEC/TOKIN 3225type TEPSLA21A475M8RC17 NeoCapacitor 4.7uF(10V) NEC/TOKIN 3225type TEPSLA21A475M8RC18 Not mountedC19 Ceramic condenser 1uF(50V) TDK 3216type C2012JF1H105ZC20 Ceramic condenser 1uF(50V) TDK 3216type C2012JF1H105ZR1 Jumper 0Ω(2A) KOA 3216type RK73Z2BR2 Jumper 0Ω(2A) KOA 3216type RK73Z2BR3 Resistor 100kΩ(0.5%) KOA 1608type RK73G1J104DR4 Jumper 0Ω(1A) KOA 1608type RK73Z1JR5 Jumper 0Ω(1A) KOA 1608type RK73Z1JR6 Resistor 1kΩ(0.5%) KOA 1608type RK73G1J102DR7 Resistor 7.5kΩ(0.5%) KOA 1608type RK73G1J752DR8 Resistor 51kΩ(0.5%) KOA 1608type RK73G1J513DR9 Resistor 22kΩ(0.5%) KOA 1608type RK73G1J223DR10 Resistor 330kΩ(0.5%) KOA 1608type RK73G1J334DR11 Resistor 200Ω(0.5%) KOA 1608type RK73G1J201DR12 Resistor 100kΩ(0.5%) KOA 1608type RK73G1J104DR13 Jumper 0Ω(2A) KOA 3216type RK73Z2BR14 Jumper 0Ω(2A) KOA 3216type RK73Z2BR15 Resistor 43kΩ(0.5%) KOA 1608type RK73G1J433DSW1 DIP switch 2 pole Not mountedPin Terminal pin ST-3-2 MacEight ST-3-2




Vo1 (V) = 0.5 / R9 (R10 + R15 + R9) 9.0 (V)

(1) Output voltage

(3) Soft-start time

(2) Oscillation frequency

fosc (kHz) = 3750 / R7(k) 500 (kHz)

ts (s) = 0.045 C4 (uF) 10.0 (ms)

(4) Short-circuit detection time

tscp (s) = 0.23 C4 (uF) 50.0 (ms)

9.9. INITIAL SETTINGSINITIAL SETTINGS

Vo2 (V) = Vo1 + (Vo1 2) - (VF 2 + R11 Io2) 25(V)

Vo3 (V) = - (Vo1 1) - (- VF - R6 Io3) -6.5 (V)

* Io2=5mA, Io3=2mA, VF 0.44V




Output voltage Vo1 - Load current Io1

8.908.928.948.968.989.009.029.049.069.089.10

0.01 0.10 1.00

Load current Io1(A)

Out

put

Vol

tage

Vo1

(V)

Total conversion efficiency - Load current

75

80

85

90

95

0.01 0.10 1.00

Load current Io1(A)

Tota

l con

vers

ion

effic

ency

(%)

10.10. REFERENCE DATAREFERENCE DATA(1) (1) Conversion efficiency vs. load current characteristic (VIN = 3.3 V)

(2) Load regulation (VIN = 3.3 V)

VIN=3.3VSetting Vo-1= 9VSetting Vo-2= 25V( 5mA) Setting Vo-3= -6.5V(2mA)

VIN=3.3V

Setting Vo-1=9V

Load Regulation

Vo-1=4.2mV




Output voltage Vo-1 - Input voltage

8.90

8.95

9.00

9.05

9.10

2.0 2.5 3.0 3.5 4.0 4.5

Input voltage(V)

Out

put v

olta

ge V

o1(V

)

Setting Vo-1=9V

Io-1=200mA

Output voltage Vo-2 - Input voltage

24.50

24.75

25.00

25.25

25.50

2.0 2.5 3.0 3.5 4.0 4.5

Input voltage(V)

Out

put v

olta

ge V

o2(V

)

Setting Vo-2=25V

Io-2=5mA

Output voltageVO-3 - Input voltage

-6.60

-6.55

-6.50

-6.45

-6.40

2.0 2.5 3.0 3.5 4.0 4.5

Input voltage(V)

Out

put v

olta

ge V

o3(V

)

(3) (3) Line regulationLine regulation

Setting Vo-3= -6.5V

Io-3= -2mA

Line Regulation=11.7mV






(4) (4) SoftSoft--start operation waveformsstart operation waveforms

Vo-1

Vo-2

Vo-3

2 4 6 8 10 12 14 16 18 20(ms)

50Vo-2(V)

0

2

4

0

10

20

30

40

CTL(V)

Vo-1

Vo-2

Vo-3

CTL CTL

CTL CTL

CTL CTL

2 4 6 8 10 12 14 16 18 20(ms)0

Vo-1(V)

0

2

4

0

2

4

6

8

CTL(V)

1010Vo-1(V)

0

2

4

0

2

4

6

8

CTL(V)

0

50Vo-2(V)

0

2

4

0

10

20

30

40

CTL(V)

2Vo-3(V)

0

2

4

-8

-6

-4

-2

CTL(V)

0

2Vo-3(V)

0

2

4

-8

-6

-4

-2

CTL(V)

0

2 4 6 8 10 12 14 16 18 20(ms)0 2 4 6 8 10 12 14 16 18 20(ms)0

2 4 6 8 10 12 14 16 18 20(ms)0 2 4 6 8 10 12 14 16 18 20(ms)0

VIN=3.3VSetting Vo-1=9VLoad=200mA




VIN=3.3VSetting Vo-3=-6.5VLoad=2mA





5.5.Output ripple waveforms (VOutput ripple waveforms (VININ = 3.3 V)= 3.3 V)

a: Voa: Vo--11

b: Vob: Vo--22

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 (s)

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 (s)

0

0

-20

-40

20

40Vo-1(mV)

5

10VD(V)

0

0

-20

-40

20

40Vo-2(mV)

5

10VD(V)



Ripple=41mV

Ripple=5.2mV




6.6.Short-circuit detection operation waveforms

0 20 40 60 80 100 120 140 160 180 200(ms)

0

0

0

5

5

1.0

0.5

CSCP(V)

Vo (V)

Nch Drain(V)

VIN=3.3VSetting Vo-1=9VVo

Nch Drain

CSCP

c: Voc: Vo--33

0

0

-20

-40

20

40Vo-3(mV)

5

10VD(V)

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 (s)


Ripple=3.6mV

5.5.Output ripple waveforms (VOutput ripple waveforms (VININ = 3.3 V)= 3.3 V)




0 5 10 15 20 25 30 35 40 45 50(ms)

0 5 10 15 20 25 30 35 40 45 50(ms)

a: Voa: Vo--11

b: Vob: Vo--22

0

300

0

1

-1

200

100

Io-1(mA)

Vo-1 (V)

-2

2

0

300

0

1

-1

200

100

Io-1(mA)

Vo-2 (V)

-2

2

VIN=3.3VSetting Vo-1=9VLoad=45

VIN=3.3VSetting Vo-2=25VLoad=5k

(7) (7) Output waveform at load sudden changeOutput waveform at load sudden change(V(VININ=3.3V)=3.3V)




0 5 10 15 20 25 30 35 40 45 50(ms)

c: Voc: Vo--33

0

300

0

1

-1

200

100

Io-1(mA)

Vo-3 (V)

-2

2VIN=3.3VSetting Vo-3=-6.5VLoad=3k

(7) (7) Output waveform at load sudden changeOutput waveform at load sudden change(V(VININ=3.3V)=3.3V)




11.11. COMPONENT SELECTION METHODSCOMPONENT SELECTION METHODS

Board Photograph

Input Pch FET

Inductor

Flyback diode

Output smoothing capacitor

FET

Diode




Vin=2.4V(Min),Vo=9.0V,Io=260mA,fosc=500kHz

(1) N-ch MOS FET(MCH6401(SANYO product) )VDS=20V, VGS=±10V, ID=4A, RDS(on)=45mΩ(Typ), Qg=12nC(Typ)

Vin (Min)

2L ton

-6

ID

Drain current: Peak valueThe peak drain current of this FET must be within its rated current.If the FET’s peak drain current is ID, it is obtained by the following formula.

1.26A

The following subsections show the component selection methods with the following common parametric values.

Vo × IoVin (Min)

+ ton = VoVo- Vin

t

2.4 ×(9 - 2.4)

2 × 6.2 × 10 × 9

9 × 0.262.4

+ ×500 × 10 3

1

(2) P-ch MOS FET(MCH6305(SANYO product) )VDS=-20V, VGS=±10V, ID=4A, RDS(on)=50mΩ(Typ), Qg=8.7nC(Typ)

Vin (Min)

2L ton

-6

ID

Drain current: Peak valueThe peak drain current of this FET must be within its rated current.If the FET’s peak drain current is ID, it is obtained by the following formula.

1.26A

Vo × IoVin (Min)

+ ton = VoVo- Vin

t

2.4 ×(9 - 2.4)2 × 6.2 × 10 × 9

9 × 0.262.4

+ ×500 × 10 3

1

*DC/DC Converter




(3) Inductor (A918CY-6R2M:TOKO product) 6.2µH(tolerance:±20%), rated current=1.49AThe condition for L to be a continuous current within the operating voltage range is obtained by the following formula.

L Vin(Max)

2 × Io × Voton

4×

3.8µH

2

9 - 49

×500 × 10 3

12 × 0.26 × 9

2

Io Vin(Max)

2 × L × Voton

4×

159.3mA

2

9 - 49

×500 × 10 3

12 × 6.2 ×10 × 9

2

The load current satisfying the continuous current condition is obtained by the following formula.

-6

=

IL =

Ripple current : Peak-to-peak valueIf the peak-to-peak ripple current is IL, it is obtained by the following formula.

0.717A

Vin (Min)

2L ton

-6

IL

1.26A

Vo × IoVin(Min)

+ ton = VoVo- Vin

× t

2.4 ×(9 - 2.4)2 × 6.2 × 10 × 9

9 × 0.262.4

+ ×500 × 10 3

1

Vin(Max)

L× ton

-64 ×(9 -4)

6.2 × 10 × 9×

500 × 10 31

Ripple current : Peak valueThe peak ripple current must be within the rated current of the inductor.If the peak ripple current is IL, it is obtained by the following formula.

×

×

×




Capacitor

(4) Output smoothing capacitor (TEPSLA21A475M8R (3units used in parallel) : NEC/TOKIN products)

4.7µF, rated voltage=10V,ESR=500mΩ, maximum permissible ripple current =1Ap-pThe output ripple voltage, output smoothing capacitor, ripple current, and series resistance are assumed to be

VO, CL, ICL, and ESR, respectively.ESR, CL, and ICL are obtained by the following formula.

ESR

228.5mΩ

CL f ×( Vin(Min) + Vo) × ( 0.33 × Vo)

Vo × Io

6.91µF

Series resistance

500 × 10 × ( 2.4 + 9 ) × ( 0.33 × 0.18 )

3

IL

Vo2πfCL

-1

0.18 12π × 500 ×10 × 14.1 × 100.717 3 -6

-

When the above three capacitors are used in parallel, the seriesresistance is 167 m and acceptable.

When the above three capacitors are used in parallel, the capacitance is 14.1 F (Typ) and acceptable.

Maximum permissible ripple current

When the above three capacitors are used in parallel, the maximum allowable ripple current is 3 Ap-p (Typ) and acceptable.

ICL

0.717A

Vin(Max)

Lton

-64 ×(9 -4)

6.2 × 10 × 9×

500 × 10 31

×

9 × 0.26




(5) Flyback diode (SBS004 : SANYO product)VR(reverse DC voltage)=15V, mean output current=1.0A, peak current=10AVF(forward voltage)=0.40V at IF=1.0AVR Value enough to satisfy the input voltage 15 VOn time of the diode is assumed to be tD (Max), the diode mean current IDi is obtained by the following formula.

IDi × ( 1 - ) = 0.975 × 0.267 260mA

IDip 1.26A

On time of the diode is assumed to be tD (Max), the diode peak current IDip is obtained by the following formula.

VoVo-Vin

Vin (Min)

2L× ton

Vo × IoVin(Min)

+

(6) Diode (F01JD2E: Origin product)VRM(repetitive peak reverse voltage)=20V, Io(average rectified forward current)=100mA, IFSM(non-repetitive peak forward surge current)= 1AVF(forward voltage drop)=0.44V(Max) at IF=0.1A, IR(reverse current)=25 A(Max)

* Charge pump

VR should be a value which satisfies the input voltage enough. 20VEfficiency is somewhat rising in low leak schottky barrier diode by the use but even if the signal diode isused, it is enough. The one of low VF is recommended to be used.

Vo × IoVin(Min)




12. 12. ORDERING INFORMATIONORDERING INFORMATION

MB39A105EVB-02

EV board part No. EV board version No.

MB39A105 EV Board-02 Rev1.0

Note

mb39a105evb-02 · 2004-05-20 · fujitsu assp product power management 3/23 mb39a105evb-02...

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