measurements of csi(tl) crystals with pmt and apd jean peyré milano - oct 2006

Milano - October 2006IPNO-RDD-Jean Peyré 1

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Measurements of CsI(Tl) Crystals

with PMT and APD

Jean PeyréMilano - Oct 2006


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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)

a) CsI(Tl) /Teflon + XP5300B 137Cs

b) CsI(Tl) /VM2000 + XP5300B 137Cs

c) CsI(Tl) + XP1912 137Cs

d) CsI(Tl) + APD S8664-1010 137Cs

e) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co

f) CsI(Tl) + XP1912 137Cs+56Co+60Co

3.Conclusions


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b) CsI(Tl) /VM2000 + XP5300B 137Cs


d) CsI(Tl) + APD S8664-1010 137Cs



3.Conclusions


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What we have got

CsI(Tl) Crystals APD S8664-1010

PMT

• 4 CsI(Tl) crystals from Saint-Gobain • PM tubes from Photonis (XP1912 and

XP5300B)• APD from Panda APD S8664-1010

(Hamamatsu)


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CsI(Tl) Crystals

• 4 Sizes: 22x22x22 mm3, 22x22x220 mm3, 44x22x200 mm3, 66x22x200 mm3, wrapped with Teflon polished only on exit face, rough on others.

CsI(Tl) Crystals

22x22x22mm3

22x22x220mm3

44x22x200mm3

66x22x200mm3


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rTypical emission spectra of

CsI(Tl)

• Light yield (54 000 photons / MeV)

Max emission= 550nm


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Photonis PMT

• XP1912 Ø 19 mm (Active area 176mm2), bialkaly• XP5300B Ø 76 mm, green extended bialkaly• Quantum efficiency

» XP1912 28% at 420nm, 14% at 550nm» XP5300B 34% at 420nm, 24% at 550nm

XP5300B

XP1912

PMT:


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rTypical Spectral Characteristics

of PMT

XP5300B

XP1912

CsI(Tl)Arbitraryvertical valuefor CsI(Tl)

PMT:

~x2


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rTypical Spectral

Characteristics of Hamamatsu Panda APD

APD S8664-1010

• APD from Panda APD S8664-1010 (Hamamatsu)

• Active area

100mm2

CsI(Tl)

Arbitraryvertical valuefor CsI(Tl)

Quantum efficiency 70% at 420nm, 85% at 550nm

APD:


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rResolution you can obtain

with CsI(Tl)

With PMT:

R: global resolution RS: scintillator resolution (~4%)*

RM: Photomultiplier resolution** Nv(M)1

2.35RM

v(M): variance of the PMT gain (~0,1)N: Number of photoelectrons

*Ref: [1], [3], [4], [5],**Ref: [1], [2], [3]

2M

2S

2 RRR

N phé RM pmt RS scint R

900 8,62% 4,00% 9,50%

950 8,39% 4,00% 9,29%

1000 8,17% 4,00% 9,10%

2000 5,78% 4,00% 7,03%

3000 4,72% 4,00% 6,19%

4000 4,09% 4,00% 5,72%

5000 3,66% 4,00% 5,42%

6000 3,34% 4,00% 5,21%


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with CsI(Tl)

22

h-eoisenh-e2S

2 /NΔN/NΔRR R: global resolution* ΔN/Ne-h: statistical fluctuation of the APD gain

Δnoise/Ne-h : Noise contribution (dark noise)

h-eh-e F/N2.35N/NΔ

F: excess noise factor Ne-h: Number of primary electron-

hole pairs

h-eoisenh-eoisen /N2.35/NΔ

With APD:

*Ref: [4]


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with CsI(Tl)

With APD:

For F=2 and noise 40 e-RMS (shaping time 3uS):

N (é-h) Fluc Gain Noise RS scint R

1000 10,51% 9,40% 4,00% 14,66%

2000 7,43% 4,70% 4,00% 9,66%

3000 6,07% 3,13% 4,00% 7,91%

4000 5,25% 2,35% 4,00% 7,01%

6000 4,29% 1,57% 4,00% 6,07%

8000 3,72% 1,18% 4,00% 5,58%

10000 3,32% 0,94% 4,00% 5,28%

12000 3,03% 0,78% 4,00% 5,08%


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b) CsI(Tl) /VM2000 + XP5300B 137Cs


d) CsI(Tl) + APD S8664-1010 137Cs



3.Conclusions

Characterisation of CsI(Tl)


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Experimental setup

Lead collimator

Source

Crystal

Photomultiplier

Wooden black box

Translation of source

Source

Lead collimator

XP5300B


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Experimental setup

PhotomultiplierXP5300B

Crystal wrapped with Teflon


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Experimental setup

γ rays

Light emissionCharge preamplifier+ Shaper + ADC+ Data Acquisition on PC

PMT XP5300B has 8 stages. Charge preamplifier connected to 5th stageCf= 24 pF, Shaping time 3 μs

Cf

XP5300B


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r137Cs peak at 662 keV

137Cs peak

Compton Edge

0,662 MeV


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Results CsI(Tl)+Teflon+XP5300B+137Cs

•RS=5,5%±0,2 except for crystal 22x22x220: RS~7%•Global Resolution is quite constant along the Crystal•Variation from 14% to 38% of collected light along the Crystal

3000

3500

4000

4500

5000

5500

6000

6500

7000

0 20 40 60 80 100 120 140 160 180 200

Position (mm) of Gamma source along the Xtal

Co

llec

ted

Lig

ht

(ph

e-)

by

XP

5300

B

Xtal 22x22x22 teflon




TEFLON

6,55%

6,52%

8,18%

6,68%

ResolutionFWHM Collected light for 137Cs peak

VS position of impact


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b) CsI(Tl) /VM2000 + XP5300B 137Cs


d) CsI(Tl) + APD S8664-1010 137Cs



3.Conclusions

Characterisation of CsI(Tl)


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Experimental setup

Crystal wrapped with VM2000


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rResults CsI(Tl)

+VM2000+XP5300B+137Cs

•RS=4,7%±0,1 for cube and 44x22x200, RS=5,6%±0,1for 22x22x220 & 66x22x200 •Global Resolution is quite constant along the Crystal•Variation from 7% to 20% of collected light along the Crystal

3000

3500

4000

4500

5000

5500

6000

6500

7000

0 20 40 60 80 100 120 140 160 180 200


Co

llec

ted

Lig

ht

(ph

oto

elec

tro

ns)

by

XP

5300

B

Xtal 22x22x22 VM2000

Xtal 22x22x220 VM2000

Xtal 44x22x200 VM2000

Xtal 66x22x200 VM2000

VM2000 5,74%

5,86%6,70%

6,57%

Collected light for 137Cs peak VS

position of impact

ResolutionFWHM


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rResults CsI(Tl)

+XP5300B+137Cs

3000

3500

4000

4500

5000

5500

6000

6500

7000

0 20 40 60 80 100 120 140 160 180 200


Co

llec

ted

Lig

ht

(ph

oto

elec

tro

ns)

by

XP

5300

B

Xtal 22x22x22 teflonXtal 22x22x220 teflonXtal 44x22x200 teflonXtal 66x22x200 teflonXtal 22x22x22 VM2000Xtal 22x22x220 VM2000Xtal 44x22x200 VM2000Xtal 66x22x200 VM2000

TEFLON down

6,55%

6,52%

8,18%

6,68%

VM2000 up5,74%

5,86%6,70%

6,57%

•VM2000 chosen for all next tests•Problem with 22x22x22O CsI(Tl) crystal


position of impact


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b) CsI(Tl) /VM2000 + XP5300B 137Cs


d) CsI(Tl) + APD S8664-1010 137Cs



3.Conclusions

Tests with small light detectors


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Experimental setup

Crystal wrapped with VM2000

Output face closed and adapted to XP1912


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rResults CsI(Tl)

+VM2000+XP1912+137Cs

•RS=5%±0,1 for cube•Variation from 7% to 14% of collected light along the Crystal•Resolution is quite constant along the Crystal

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 20 40 60 80 100 120 140 160 180 200


Co

llec

ted

Lig

ht

(ph

oto

elec

tro

ns)

Xtal 22x22x22 closed XP1912




VM2000

XP1912

8,05%

10,33%

9,40%

12,28%


position of impact

ResolutionFWHM


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0

1000

2000

3000

4000

5000

6000

7000

8000

0 20 40 60 80 100 120 140 160 180 200


Co

llec

ted

Lig

ht

(ph

oto

elec

tro

ns)

Xtal 22x22x22 XP5300

Xtal 22x22x220 XP5300

Xtal 44x22x200 XP5300

Xtal 66x22x200 XP5300





XP5300B

XP1912

5,74%5,86%

8,05%

10,33%

6,70%

9,40% 12,28%

VM2000

6,57%

Results for PMT/VM2000+137Cs


position of impact


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b) CsI(Tl) /VM2000 + XP5300B 137Cs


d) CsI(Tl) + APD S8664-1010 137Cs



3.Conclusions



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Experimental setup

γ rays

Light emission

Charge preamplifier+ Shaper + ADC+ Data Acquisition on PC

APD used at Gain 50 and 380V. Cf= 0,5 pF, Shaping time 3 μs

Cf


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Results CsI(Tl)+VM2000+APD+137Cs

0

500

1000

1500

2000

2500

3000

3500

4000

0,00 20,00 40,00 60,00 80,00 100,00 120,00 140,00 160,00 180,00 200,00


Co

llec

ted

Lig

ht

(ele

ctro

n-h

ole

s)

Xtal 22x22x22 APD

Xtal 22x22x220 APD

VM2000 8,23%

9,39%

•RS=4,5%±0,1 •Global Resolution is quite constant along the Crystal except close to the APD


position of impact

ResolutionFWHM


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rResolutions CsI(Tl)

+VM2000+APD/PMT+137Cs

5,74%

8,05%

8,23% 9,39%

6,70%

9,40% 10,33%

5,86% 6,57%

12,28%

22x22x22 22x22x220 44x22x200 66x22x200

XP

5300B

XP

1912

AP

D S

8664-1

010


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b) CsI(Tl) /VM2000 + XP5300B 137Cs


d) CsI(Tl) + APD S8664-1010 137Cs

e) CsI(Tl) + XP1912 137Cs+56Co+60Co

f) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co

3.Conclusions



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r60Co peaks

60Co peaks

1.17 MeV

1.33 MeV


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r56Co peaks

56Co peaks0,85 MeV

1.24 MeV

2,59 MeV

3,25 MeV


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rResolutions CsI(Tl)

+VM2000+XP1912+137Cs+60Co+56Co

0

1000

2000

3000

4000

5000

6000

0 50 100 150 200


Co

llec

ted

Lig

ht

(ph

oto

ele

ctr

on

s)

9,40%

60Co 1,33MeV

137Cs 0,66MeV

56Co 3,25MeV

6,45%

4,90%

Collected light for 137Cs, 60Co, 56Co peaks VS position of impact

(5,35%)

(6,71%)

(9,29%)

Rscint =4%

calculated

measured

ResolutionFWHM


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0

2000

4000

6000

8000

10000

12000

14000

0 50 100 150 200


Co

llect

ed L

igh

t (e

lect

ron

-ho

les)

5,84%

9,39%

60Co 1,33MeV

137Cs 0,66MeV

56Co 3,25MeV

4,64%

Results CsI(Tl)+VM2000+APD+137Cs+60Co+56Co

Collected light for 137Cs, 60Co, 56Co peaks VS position of impact

(9,00%)

(6,82%)

(5,13%)

Rscint =4%


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b) CsI(Tl) /VM2000 + XP5300B 137Cs


d) CsI(Tl) + APD S8664-1010 137Cs

e) CsI(Tl) + XP1912 137Cs+56Co+60Co

f) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co

3.Conclusions


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XP1452

• XP1452 38 mm (Active area 4x272mm2), green extended bialkaly

• Quantum efficiency 34% at 420nm, 24% at 550nm• Size from 35mm to 50mm

Use of XP1452 foreseen

Next tests with XP1452


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Conclusions

Photodetector

Area photok

Area photok/Area Xtal

Quantum Efficiency

Global Efficiency

@0.66Mev

@1.33Mev

@3.25Mev

Cost

XP5300B

>484 mm2

100% 24% 24% 5.54%

4.83%

4.36%

Testonly

XP1912 176 mm2

36% 14% 5% 9.25%

7.11%

5.49%

120€

XP145238x38

272 mm2

56% 20% 11% 6.89%

5.62%

4.73%

350/2€

XP145244x44

380 mm2

79% 20% 16% 6.21%

5.21%

4.54%

350/2€

APD 100 mm2

21% 85% 17% 9.00%

6.64%

5.15%

150€

Calculated ResolutionsXtal 22x22x220 @550nm


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Conclusions

1. Collected light through long crystals is not constant. Tests with non collimated 137Cs source give resolutions greater that 15%.

2. The choice of VM2000 seems obvious3. With XP1912, it seems difficult to have a resolution

better than 9%-10% at 662keV on long crystals because:a. Area covered by PMT is only 36% with 22x22

output faceb. Intrinsic resolution of crystal is quite high

(~4/5%)c. Photocathode is not green extended bialkaly

4. Resolution obtained with PMT XP1912 and APD are quite comparable until 3.25MeV

5. No work has been done on surface quality (polished/rough)

6. Use of XP1452 seems promising7. Tests on LaCl3 crystal


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Many Thanks to all participants

measurements of csi(tl) crystals with pmt and apd jean peyré milano - oct 2006

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