menlo mm5110 - 100 watt spst mems switch...
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© 2015 Menlo Microsystems, Inc. – All Rights Reserved – www.menlomicrosystems.com
Page 1 Doc.Rev 5110.A 2016-02-25
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MM5110 Digital-Micro-Switch 100W SPST
Product Specification
Features: DC to > 6 GHz Frequency Range
100 Watt (50 dBm) Maximum Power
Low On-State Insertion Loss < 0.2 dB @ 3 GHz
-15 dB Off-State Isolation @ 3 GHz
Ultra Low On-State Resistance < 0.3 Ω
Maximum voltage (AC or DC): +200V on RF input
< 10 µsec On/Off Switching Time
Stable Switch Resistance up to +85ºC
Hermetic 7mm x 7mm x 1.8mm CLCC Package
Applications: Functional Diagram: Scientific and Medical
Automated Test Systems
Wireless Infrastructure
Industrial Automation
Defense and Aerospace
Description: The MM-5110 is a high power 100W SPST micro-mechanical switch offered by Menlo Microsystems that has developed a new MetalMEMS™ fabrication process and applied it to DC and wideband RF/microwave switch applications. This innovative process technology has enabled robust and highly reliable switches capable of withstanding 200 volts at more than 1A using only picoamps of switch current during operation. The switch contacts provide very low on-state resistance and high off-state isolation from DC to 6 GHz with > 1B cold switching cycles at operating temperatures up to 85ºC. An external supply +80 VDC bias source for the switch driver is required.
© 2015 Menlo Microsystems, Inc. – All Rights Reserved – www.menlomicrosystems.com
Page 2 Doc.Rev 5110.A 2016-02-25
<DRAFT>MM-5110 MetalMEMS™ 100W SPST Switch
Operating Characteristics
Absolute Maximum Ratings Exceeding the maximum ratings as listed in Table 1 may reduce the reliability of the device or cause permanent damage. Operation of the MEMS switch should be restricted to the limits indicated in Table 2 recommended operating conditions listed below.
Electrostatic Discharge (ESD) Safeguards When handling this MEMS switch, observe the same precautions as with any other ESD sensitive devices. Even though this MEMS switch device is protected from ESD damage. Precautions must be taken to avoid exceeding the ratings specified in Table 1.0 below.
Susceptibility to Latch-Up This MEMS switch device is generally not susceptible to switch latch-up conditions which can occur in some semiconductor switch devices used in RF/microwave applications.
Table 1 Maximum Ratings
Parameter Minimum Maximum Unit
High Voltage Bias Supply, VBB 80 100 Volt
RF/Microwave Input Power (1) 100 / 50 W / dBm
Operating Frequency Range (2) DC 6 GHz
Switch Rating Voltage 200 V (DC)
Switch Rating Current 1A A (DC)
Operating Temperature Range -40 +85 ˚C
ESD Voltage All Pins (3) 250 Volt
Storage Temperature Range -70 +150 ºC
Notes: 1) All parameters must be within recommended operating conditions. Maximum DC and RF power
can only be applied during the on-state condition. No hot switching.
2) For RF/microwave applications high frequency performance can be improved by external matching.
3) Machine model JEDEC Standard JESD22 A115.
© 2015 Menlo Microsystems, Inc. – All Rights Reserved – www.menlomicrosystems.com
Page 3 Doc.Rev 5110.A 2016-02-25
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MM-5110 MetalMEMS™ 100W SPST Switch
Detailed Electrical Characteristics
Table 2 Recommended Operating Conditions
Parameter Minimum Typical Maximum Unit
Frequency Range DC 6 GHz
Power per Channel Continuous 100 / 50 W / dBm
Insertion Loss @ 3 GHz 0.16 dB
Return Loss @ 3 GHz 37 dB
On-Off Isolation @ 3 GHz 21 dB
Switch Rated Voltage 200 VDC
Third-Order Intercept (IP3) >85 dBm
Second-Order Intercept (IP2) >85 dBm
Switching Time 10 µsec
Full Cycle Frequency 20 KHz
Switch Operations 109 Cycles
Steady State Current 1500 mA
Hot Switching Current 10 mA
Peak pulse current (< 1 msec) 3000 mA
Leakage current @ 200 Volts < 25 pA
On-State Resistance 0.3 0.5 mΩ
High Voltage Gate Bias (VBB) 75 80 100 VDC
Operating Temperature Range -40 +85 ºC
© 2015 Menlo Microsystems, Inc. – All Rights Reserved – www.menlomicrosystems.com
Page 4 Doc.Rev 5110.A 2016-02-25
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MM-5110 MetalMEMS™ 100W SPST Switch
Metal MEMS 6-Channel SPST Switch
Typical Performance Characteristics
Figure 1 Insertion Loss to 6GHz Figure 2 isolation to 6GHz
Figure 3 Transient Carry Current vs Time (T=25ºC) Figure 4 Leakage Current vs Voltage (Off-State)
© 2015 Menlo Microsystems, Inc. – All Rights Reserved – www.menlomicrosystems.com
Page 5 Doc.Rev 5110.A 2016-02-25
<DRAFT>MM-5110 MetalMEMS™ 100W SPST Switch
Metal MEMS 100W SPST Switch
44-Lead Ceramic LCC
Figure 15 Pinout Configuration (Top View)
Table 3 Detailed Pin Description
Pin # Function Description Pin # Function Description
1-9 GND Package Ground 36 N/C N/C
10 N/C Do Not Connect 37 N/C N/C
11-15 GND Package Ground 38 GND Package Ground
16 RF IN RF Input (Beam) 39 N/C N/C
17 GND Package Ground 40 GND Package Ground
18 N/C N/C 41 RF OUT RF Output (Contact)
19 N/C N/C 42-44 GND Package Ground
20 GND Package Ground
21 Gate Ext Gate Supply
22-35 GND Package Ground