micro-raman spectroscopy measurement of stress in silicon€¦ · micro-raman spectroscopy...
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Micro-Raman Spectroscopy Measurement
of Stress in Silicon
Sergej Shashkov, SOL instruments Ltd.,
Nezavisimosti ave.58-10, Minsk, Belarus
www.solinstruments.com
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Mechanical stress can have direct or indirect effects on the functioning
and reliability of a chip and can cause different failure modes, such as:
- changes in electron or hole mobility
- dislocations near isolation structures
- cracks in chips,
- creep in metals,
- stress migration, etc.
Stress can also be used in a positive way, for example to increase the
carrier mobility.
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Local Strain Metrologies
T. Kanayama, 2007 Int Conf Frontiers of Characterization and Metrology for
Nanoelectronics, March 29, 2007
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E.D. Palik, “Handbook of Optical Constants of Solids”, Academic Press,Sant Diego, 1998.
Penetration Depth
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The sample consists 1, 1.5, 2 and
4 µm wide Si stripes separated by
4 µm shallow trenches.
The next equation can be applied
to the Si stress monitoring:
σ(MPa) = −435 ·(ω - ω0) (cm−1),
where σ is the stress value,
0 = 520.5 cm −1 is the peak
position of the stress-free state, ω
is the Si peak position at the
stressed state.
Compressive
stress Δω>0 Tensile stress
Δω<0
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1sec/point; 532nm laser; ~2 mW laser power, 20nm scanning step
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A periodic STI (shallow trench isolation) structure
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Defect Area on the Silicon Wafer
Stress Distribution
Variation of stress lies in the range between +43 MPa and -175 MPa.
AFM
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EEPROM Investigation
514.50 520.01
521
519
517
515
513
511
cm-1
15 x 15 um
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Growing of Ge dots on Si Substrate
(schematic diagram)
Ge QD on a Silicon Substrate
AFM Topography
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0
-0.1
-0.2
-0.3
0
+43.5
+86.4
+130.5
cm-1 MPa
Raman Microscopy of Ge dots on Si
Si-Si Ge-Ge
Si-Ge
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Si peak shift, cm-1
Strain Investigation in a SiGe Sample
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AFM Cantilever: Raman Imaging
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Thank you very much for your attention!
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