MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 283

Microcrystalline Semiconductors:

Materials Science & Devices

Symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

EDITORS:

Philippe M. Fauchet

University of Rochester

Rochester, New York, U.S.A.

Chuang Chuang Tsai

Xerox PARC

Palo Alto, California, U.S.A.

Leigh T. Canham

Defence Research Agency-RSREMalvern, United Kingdom

Isamu Shimizu

Tokyo Institute of TechnologyYokohama, Japan

Yoshinobu AoyagiRIKEN Institute

Saitama, Japan

ImIrIsI

MATERIALS RESEARCH SOCIETY

Pittsburgh, Pennsylvania

Contents

PREFACE xvii

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xviii

PART I: SILICON AND GERMANIUM

NANOSTRUCTURE FABRICATION

*AN ELECTROCHEMICAL STUDY OF POROUS SILICON 3

J.D. L'Ecuyer and J.P.G. Fair

^OPTICAL PROPERTIES AND NEW FUNCTIONALITY OF NANO-

CRYSTALLINE CuCl AND Ge 15Yasuaki Masumoto

FORMATION MECHANISM OF MICROPOROUS SILICON: PREDICTIONS

AND EXPERIMENTAL RESULTS 27

V. Lehmann and U. Gosele

VISIBLE PHOTOLUMINESCENCE AND MICROSTRUCTURE OF

ANNEALED AND CHEMICALLY ETCHED AMORPHOUS Si 33

K.H. Jung, S. Shih, D.L. Kwong, C.C. Cho, and B.E. Gnade

INTENSE RT VISIBLE PHOTOLUMINESCENCE FROM ANODIZED

AMORPHOUS AND NANOCRYSTALLINE SILICON FILMS 39

E. Bustarret, J.C. Bruyere, F. Muller, and M. Ligeon

COMPOSITION AND STRUCTURE OF SPARK ERODED POROUS

SILICON 45

R.E. Hummel, S.-S. Chang, M. Ludwig, and A. Morrone

NANOCRYSTALLINE Ge SYNTHESIS BY REDUCTION OF Si. xGexOFORMED BY HIGH PRESSURE OXIDATION 51

David C. Paine, Christine Caragianis, Tae Young Kim, and

Yuzo Shigesato

SILICON QUANTUM WIRES OXIDATION AND TRANSPORT STUDIES 57

H.I. Liu, D.K. Biegelsen, N.M. Johnson, F.A. Ponce, N.I. Maluf,and R.F.W. Pease

PHOTOLUMINESCENCE FROM MICROCRYSTALLINE SILICON AND

RELATED MATERIALS 65

M. Riickschloss, B. Landkammer, O. Ambacher, and S. Vepfek

NANOCRYSTALL1TES OF Si EMBEDDED IN CaF, BY MOLECULARBEAM EPITAXY (MBE) 71

A.P. Taylor, K. Stokes, Z.C. Wu, P.D. Persans, L.J. Schowalter,and F.K. LeGoues

Si-CLUSTER LUMINESCENCE 77

Winston A. Saunders, Harry A. Atwater, Kerry J. Vahala,Richard C. Flagan, and Peter C. Sercel

PREPARATION AND CHEMICAL INVESTIGATION OF POROUS SILICON 83S. Poulin, Y. Diawara, J.F. Currie, A. Yelon, S.C. Gujrathi, and

V. Petrova-Koch

*Invited Paper

v

BLUE LIGHT EMISSION FROM POROUS SILICON

X.Y. Hou, G. Shi, W. Wang, F.L. Zhang, P.H. Hao, D.M. Huang,X.F. Jin, and Xun Wang

89

PART II: POROUS SILICON CHARACTERIZATION

^CHARACTERIZATION OF POROUS SILICON: STRUCTURAL, OPTICALAND ELECTRICAL PROPERTIES 97

P.A. Badoz, D. Bensahel, G. Bomchil, F. Ferrieu, A. Halimaoui,P. Perret, J.L. Regolini, I. Sagnes, and G. Vincent

PL AND FTIR ABSORPTION STUDY ON POROUS SILICON IN SITU

DURING ETCHING, IN OXYGEN AMBIENT, AND AFTER CHEMICALOXIDATION 109

G. Mauckner, T. Walter, T. Baier, K. Thonk, and R. Sauer

VISIBLE LIGHT EMISSION FROM POROUS SILICON EXAMINED BY

PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY 115

Terry R. Guilinger, Michael J. Kelly, David R. Tallant,David A. Redman, and David M. Follstaedt

LUMINESCENCE PROPERTIES OF POROUS SILICON 121C. Peng, L. Tsybeskov, and P.M. Fauchet

STRAINED QUANTUM DOTS IN POROUS SILICON 127

Xue-Shu Zhao, Peter D. Persans, John Schroeder, and Yeun-Jung Wu

SMALL-ANGLE X-RAY SCATTERING FROM LIGHT EMITTING POROUSSILICON AND SILOXENE 133

H. Franz, V. Petrova-Koch, T. Muschik, V. Lehmann, and J. Peisl

Si2p CORE LEVEL ABSORPTION AND PHOTOEMISSION SPECTRA OF

POROUS Si 139

Hisao Nakashima, Koichi Inoue, and Kenzo Maehashi

THE LUMINESCENCE MECHANISM OF POROUS SILICON 143P.D.J. Calcott, K.J. Nash, L.T. Canham, M.J. Kane, andD. Brumhead

PICOSECOND DECAY DYNAMICS IN POROUS SILICON 149T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu

ESR STUDY OF POROUS SILICON 155W.Y. Cheung, S.P. Wong, I.H. Wilson, C.F. Kan, and S.K. Hark

STUDY OF PHOTOLUMINESCENT THIN FILM POROUS SILICON ON

SAPPHIRE 161W.B. Dubbelday, D.M. Szaflarski, R.L. Shimabukuro, andS.D. Russell

OBSERVATION OF PARAMAGNETIC SILICON DANGLING ORBITALSIN LUMINESCENT POROUS SILICON 167

F. C. Rong, E.H. Poindexter, J.F. Harvey, D.C. Morton, R.A. Lux,and G.J. Gerardi

HIGH SPATIAL RESOLUTION MAPPING OF POROUS SILICON 173E. Ettedgui, C. Peng, L. Tsybeskov, Y. Gao, P.M. Fauchet,G. E. Carver, and H.A. Mizes

*Invited Paper

vi

FAST PHOTOLUMINESCENCE FROM POROUS SILICON 179V. Petrova-Koch, T. Muschik, D.I. Kovalev, F. Koch, andV. Lehmann

FINE STRUCTURE OF VISIBLE LIGHT EMITTING POROUS SILICON 185

Kiyokazu Nakagawa, Akio Nishida, and Toshikazu Shimada

POROUS SILICON PHOTOLUMINESCENCE VERSUS HF ETCHING:

NO CORRELATION WITH SURFACE HYDROGEN SPECIES 191

M.B. Robinson, A.C. Dillon, and S.M. George

SOME PERSPECTIVES ON THE LUMINESCENCE MECHANISM VIA

SURFACE-CONFINED STATES OF POROUS Si 197

F. Koch, V. Petrova-Koch, T. Muschik, A. Nikolov, and V. Gavrilenko

VISIBLE LUMINESCENCE FROM POROUS SILICON AND SILOXENE:

RECENT RESULTS 203

H.D. Fuchs, M. Rosenbauer, M.S. Brandt, S. Ernst, S. Finkbeiner,M. Stutzmann, K. Syassen, J. Weber, H.J. Queisser, and M. Cardona

STRUCTURAL INVESTIGATION OF ELECTROCHEMICALLY ETCHED

SILICON 209

B.J. Heuser, S. Spooner, C.J. Glinka, D.L. Gilliam, N.A. Winslow,and M.S. Boley

CHARACTERIZATION OF POROUS SILICON LAYERS BY REFLECTANCE

SPECTROSCOPY 215

W. Thei/3, P. Grosse, H. Miinder, H. Liith, R. Herino, and M. Ligeon

PHOTOCHEMICAL ETCHING EFFECTS ON OPTICAL PROPERTIES

OF POROUS SILICON 221

Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi,and H. Mimura

INVESTIGATION OF POROUS SILICON FILMS STRUCTURE BY

OPTICAL METHODS 227

P. Basmaji, V. Grivickas, G.I. Surdutovich, R. Vitlina, and

V.S. Bagnato

RAPID PHOTOLUMINESCENCE INTENSITY DEGRADATION IN

POROUS SILICON 232

P. Basmaji, A.A. Bernussi, J.C. Rossi, and B. Matvienko

PART III: POROUS SILICON PASSIVATION/DEPASSIVATION

RADIATIVE AND NON-RADIATIVE PROCESSES FOR THE LIGHT

EMISSION FROM POROUS SILICON 241

J.C. Vial, A. Bsiesy, G. Fishman, F. Gaspard, R. Herino,M. Ligeon, F. Muller, R. Romestain, and R.M. MacFarlane

MICROCRYSTALLITES IN OXIDIZED POROUS SILICON 247

V. Lehmann, H. Cerva, B. Jobst, V. Petrova-Koch, A. Kux, and

T. Muschik

ELECTRON SPIN RESONANCE INVESTIGATIONS OF RAPID THERMAL

OXIDIZED POROUS SILICON 251

H. Linke, P. Omling, B.K. Meyer, V. Petrova-Koch, T. Muschik,and V. Lehmann

vii

LIGHT EMISSION FROM POROUS SILICON SUBJECTED TO RAPID

THERMAL OXIDATION 257

A.G. Cullis, L.T. Canham, G.M. Williams, P.W. Smith, andO.D. Dosser

LIGHT-EMITTING nm-SIZE SILICON USING ELECTROCHEMICALANODIZATION AND OXIDATION 263

Toshimichi Ito, Toshimichi Ohta, Kenji Motoi, Osamu Arakaki,and Akio Hiraki

INTENSE VISIBLE LUMINESCENCE FROM THERMALLY-OXIDIZEDPOROUS SILICON 269

S. Miyazaki, K. Shiba, K. Sakamoto, and M. Hirose

EFFECTS OF SURFACE TREATMENTS ON THE PHOTOLUMINESCENCEOF POROUS Si AND A SUGGESTED MECHANISM FOR THE PHOTO-

LUMINESCENCE 275Masao Yamada, Kazuaki Kondo, Takae Sasaki, Akira Takazawa, andTetsuro Tamura

DEGRADATION OF POROUS Si LAYERS CAUSED BY THERMALTREATMENT 281

H. Miinder, M.G. Berger, S. Frohnhoff, H. Liith, U. Rossow,U. Frotscher, and W. Richter

EFFECT OF LASER ILLUMINATION ON OXIDIZATION OF POROUSSILICON 287

L.Z. Zhang, J.C. Mao, B.R. Zhang, W.X. Zhu, Y.L. He,H.Z. Song, J.Q. Duan, and G.G. Qin

THE ROLE OF Si-H, Si-H2 AND OXYGEN IN THE PHOTO-

LUMINESCENCE OF POROUS Si 293

J.M. Lavine, A.J. Bellezza, S.P. Sawan, and Y-T. Shieh

METASTABILITY OF LUMINESCENT POROUS SILICON 299S. Miyazaki, K. Sakamoto, K. Shiba, and M. Hirose

THE EFFECT OF LEWIS BASE CHEMISORPTION ON THELUMINESCENCE OF POROUS SILICON 305

Jeffery L. Coffer, Sean C. Lilley, Rebecca A. Martin, and

Leigh Ann Files-Sesler

LUMINESCENCE ACTIVATION OF POROUS SILICON BY POST-ANODIZATION TREATMENT 311

A. Kux, F. Miiller, and F. Koch

PROPERTIES OF POROUS SILICON WITH PHOTOLUMINESCENCEENHANCED BY A REMOTE-PLASMA TREATMENT 317

Y. Xiao, M.J. Heben, J.I. Pankove, and Y.S. Tsuo

MECHANISM OF IN-SITU PHOTOLUMINESCENCE DECAY INPOROUS SILICON AND ITS APPLICATION TO MASKLESSPATTERNING 323

Mikio Takai, Sanae Indou, and Hisanori Murase

BR0NSTED AND LEWIS BASE QUENCHING OF PHOTOEMISSIONFROM LUMINESCENT 'POROUS SILICON': SURFACE PROTONSIN THE LUMINESCENCE MECHANISM 329

J.K.M. Chun, A.B. Bocarsly, T.R. Cottrell, J.B. Benziger, and

J.C. Yee

viii

PART IV: ELECTROLUMINESCENT AND OTHER DEVICESWITH POROUS SILICON

*OPTOELECTRONIC CHARACTERIZATIONS OF POROUS SILICON 337

Nobuyoshi Koshida and Hideki Koyama

*NEW RESULTS ON ELECTROLUMINESCENCE FROM POROUS SILICON 343Peter Steiner, Frank Kozlowski, Hermann Sandmaier, and Walter Lang

PHOTOCONDUCTIVITY AND CARRIER TRANSPORT IN POROUS

SILICON 353M.J. Heben and Y.S. Tsuo

MECHANISM OF ELECTRON INJECTION DURING THE ANODIC

OXIDATION OF SILICON 359J.-N. Chazalviel and F. Ozanam

POROUS SILICON-BASED OPTOELECTRONIC DEVICES: PROCESSINGAND CHARACTERIZATION 365

Nader M. Kalkhoran

A UNITY QUANTUM EFFICIENCY PHOTODIODE USING POROUSSILICON FILM 371

J.P. Zheng, K.L. Jiao, W.P. Shen, W.A. Anderson, and

H.S. Kwok

THE DEPTH DEPENDENCE OF PHOTOLUMINESCENCE AND

ELECTROLYTIC ELECTROLUMINESCENCE IN POROUS SILICON

FILMS 377M.I.J. Beale, T.I. Cox, L.T. Canham, and D. Brumhead

THEORY OF POROUS SILICON INJECTION ELECTROLUMINESCENCE 383

H. Paul Maruska, F. Namavar, and N.M. Kalkhoran

VISIBLE ELECTROLUMINESCENCE FROM PN JUNCTION TYPE

pic-SiC/POROUS Si/c-Si STRUCTURES 389

T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura, and

K. Kitamura

OPTICAL STUDIES OF ELECTROLUMINESCENT STRUCTURES FROM

POROUS SILICON 395

J.F. Harvey, R.A. Lux, D.C. Morton, G.F. McLane, and R. Tsu

STUDY ON THE PHOTOCONDUCTIVE EFFECT FROM A P/N JUNCTION

STRUCTURE INCORPORATED WITH POROUS SILICON 401

C.C. Yeh, Klaus Y.J. Hsu, P.C. Chen, and H.L. Hwang

PHOTOVOLTAIC DEVICE APPLICATIONS OF POROUS SILICON 405Y.S. Tsuo, M.J. Heben, X. Wu, Y. Xiao, C.A. Moore,P. Verlinden, and S.K. Deb

ORGANIC-INORGANIC JUNCTIONS FORMED ON POROUS SILICON:

ISOLATION OF A SURFACE CONFIGURATION PRIMARY TO THE

LUMINESCENCE MECHANISM 411

T.R. Cottrell, J.B. Benziger, J.C. Yee, J.K.M. Chun, and

A.B. Bocarsly

*Invited Paper

ix

PART V: SILICON NANOSTRUCTURE THEORY

THEORY OF ELECTRONIC, OPTICAL AND TRANSPORT PROPERTIESIN SILICON QUANTUM WIRES 419

G.D. Sanders, C.J. Stanton, and Y.C. Chang

ROLE OF HYDROGENATED SURFACE IN THE PHOTOLUMINESCENCEOF POROUS SILICON 425

Masahiko Hirao, Tsuyoshi Uda, and Yoshimasa Murayama

CALCULATION OF THE ENERGY SPECTRUM OF NANO-METER-SIZED SILICON 431

Vladimir Gavrilenko, Peter Vogl, and Frederick Koch

QUANTUM CONFINEMENT EFFECTS ON THE DIELECTRIC CONSTANTOF POROUS SILICON 437

R. Tsu, L. Ioriatti, J.F. Harvey, H. Shen, and R.A. Lux

PART VI: MICROCRYSTALLINE SILICON

TRANSPORT AND MICROSTRUCTURE OF MICROCRYSTALLINE

SILICON ALLOYS 443G. Lucovsky, C. Wang, M.J. Williams, Y.L. Chen, and D.M. Maher

*THE PHYSICS OF PLASMA DEPOSITION OF MICROCRYSTALLINE

SILICON 455B. Drevillon, I. Solomon, and M. Fang

*MICROCRYSTALLINE SILICON IN a-SI:H BASED MULTIJUNCTIONSOLAR CELLS 463

Liyou Yang, L. Chen, S. Wiedeman, and A. Catalano

MICROCRYSTALLINE SILICON PREPARED BY VHF-GD: STRUCTURE,TRANSPORT AND OPTICAL PROPERTIES 471

F. Finger, R. Carius, P. Hapke, K. Prasad, and R. Fluckiger

CRYSTALLINITY AND OPTOELECTRONIC PROPERTIES OF /*c-SiC:H 477

F. Demichelis, G. Crovini, C. Osenga, C.F. Pirri, E. Tresso, andL. Boarino

CONDUCTANCE IN MICROCRYSTALLINE B. C/Si HETERO-

JUNCTION DIODES 483

Sunwoo Lee, Thuong Ton, D. Zych, and P.A. Dowben

HIGHLY TEXTURED MICROCRYSTALLINE Si-THIN FILM

FABRICATED BY LAYER-BY-LAYER TECHNIQUE 489

Shun-ichi Ishihara, Deyan He, Tetsuya Akasaka, Yuzoh Araki,Masami Nakata, and Isamu Shimizu

MICROSTRUCTURAL EVOLUTION AND SUBSTRATE SELECTIVITY IN

PECVD ftc-Si 495

Gregory N. Parsons, John J. Boland, and James C. Tsang

MICROCRYSTALLINE SILICON BY DC MAGNETRON SPUTTERING:

GROWTH MECHANISMS 501

G. F. Feng, M. Katiyar, Y.H. Yang, J.R. Abelson, and N. Maley

HIGH QUALITY P-DOPED Mc-Si:H FILMS AS OBTAINED BY LOWTEMPERATURE LPCVD OF DISILANE 507

C. Manfredotti, F. Fizzotti, G. Amato, L. Boarino, and M. Abbas

*Invited Paper

x

CARRIER TRANSPORT THROUGH GRAIN BOUNDARIES INHYDROGENATED MICROCRYSTALLINE SILICON 513

S. Grebner, F. Wang, and R. Schwarz

SEPARATION OF NUCLEATION AND GROWTH PROCESSES OFNANOCRYSTALLINE SILICON BY HYDROGEN RADICAL TREATMENTOF HYDROGENATED AMORPHOUS SILICON 519

Masanori Otobe and Shunri Oda

XPS STUDIES OF HYDROGEN AND OXYGEN BONDINGCONFIGURATIONS IN HYDROGENATED MICROCRYSTALLINE

SILICON MATERIALS PRODUCED BY NEUTRON IRRADIATION 525Y.C. Koo, G.C. Weatherly, R. Sodhi, S.J. Thorpe, and K.T. Aust

HYDROGEN CONFIGURATIONS IN MICROCRYSTALLIZED SPUTTERED

AMORPHOUS SILICON 531L. Lusson, P. Elkaim, M. Cuniot, D. Ballutaud, R. Rizk, andJ. Dixmier

THE MICRO-STRUCTURE AND ELECTRON CONDUCTION MECHANISMOF HYDROGENATED NANO-CRYSTALLINE SILICON FILMS 537

Yuliang He, Yiming Chu, Hongyi Lin, and Guoguang Qin

STRUCTURE AND MORPHOLOGY OF /iC-SiC:H FILMS PRODUCEDBY PECVD 543

F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, L. Battezzati,and P. Rava

SOLUTE BINDING AT VOID SURFACES IN SILICON AND GERMANIUM 549S.M. Myers, D.M. Bishop, D.M. Follstaedt, H.J. Stein, and

W.R. Wampler

CRYSTALLINITY ANALYSIS OF AMORPHOUS-CRYSTALLINE MIXED

PHASE SILICON FILMS USING EXAFS METHOD 555

Masatoshi Wakagi, Toshiki Kaneko, Kiyoshi Ogata, and Asao Nakano

SPECTROSCOPIC ELLIPSOMETRY AND INTERFERENCE

REFLECTOMETRY MEASUREMENTS OF CVD SILICON GROWN

ON OXIDIZED SILICON 561

G.E. Jellison, Jr., M. Keefer, and L. Thornquist

ELECTRICAL PROPERTIES OF BORON-DOPED Atc-Si:HPREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si

TARGETS 567

W.A. Turner, M.J. Williams, Y.L. Chen, D.M. Maher, and

G. Lucovsky

A PARTICULAR STRUCTURE OF B-DOPED /xc-Si/a-Si:H LAYERSON INSULATOR 573

M. Le Berre, M. Lemiti, P. Pinard, E. Bustarret, W. Grieshaber,J.-C. Bruyere, and M. Brunei

PHOTOLUMINESCENCE IN B-DOPED /xc-Si:H 579

S.Q. Gu, J.M. Viner, P.C. Taylor, M.J. Williams, W.A. Turner,

and G. Lucovsky

ENHANCED CONDUCTIVITY IN n-TYPE MICROCRYSTALLINE

SILICON 585

E.A.T. Dirani, A.M. de Andrade, and I. Pereyra

TEM STUDY AND HALL MEASUREMENT OF nc-Si PREPARED

BY CONTROLLED DEPOSITION 591

Masami Nakata and Isamu Shimizi'

xi

ELECTROLUMINESCENCE AS A FUNCTION OF ELECTRIC FIELD

AND TEMPERATURE IN AMORPHOUS SILICON-CARBIDE BASED

p-i-n STRUCTURES 597

A.B. Pevtsov, A.G. Pilatov, N.A. Feoktistov, A.V. Zherzdev,S.M. Karabanov, T. Muschik, D. Zrenner, and R. Schwarz

EFFECTS OF DILUTED-HYDROGEN AND HYDROGEN-ATOM-

TREATMENT ON THE SILICON-HYDROGEN BONDING

CONFIGURATIONS OF HYDROGENATED SILICON FILMS 603

K.C. Hsu, H. Chang, and H.L. Hwang

MICRO-CRYSTALLINE SILICON IN IMAGE SENSOR 609

B.W. Park, J.I. Choi, C.W. Hur, T.K. Oh, and I.K. Kang

A NEW THIN FILM GROWTH/REGROWTH PROCESS DESIGN AND

EXPERIMENTAL COMPARISONS WITH MOLECULAR DYNAMIC

ANALYSES 615

Takako K. Okada, Shigeru Kambayashi, Moto Yabuki,

Yoshitaka Tsunashima, Yuichi Mikata, and Shinji Onga

PART VII: POLYSILICON

PROPERTIES AND PRODUCTION MECHANISM OF LOW-TEMPERATURE

DEPOSITED CAT-CVD POLY-SILICON FILMS 623

Hideki Matsumura, Yoichi Hosoda, and Seijiro Furukawa

LOW TEMPERATURE FABRICATION OF POLY-Si TFTs USING

IN-SITU CHEMICALLY CLEANING METHOD 629

Naoki Kono, Tatsuro Nagahara, Kenji Fujimoto, Yusaku Kashiwagi,and Hisashi Kakinoki

GROWTH OF POLYCRYSTALLINE SILICON FILMS AT LOW

TEMPERATURE BY REMOTE PLASMA CVD 635

Sung Chul Kim, Kyu Chang Park, Sung Ki Kim, Jung Mok Jun,and Jin Jang

EARLY STAGE IN POLYCRYSTALLINE GROWTH OF Si BY FLUORO-OXIDATION OF SILANE 641

Kenji Endo, Masahiro Bunyo, Isamu Shimizu, and Jun-Ichi Hanna

LAYERED POLY/AMORPHOUS SILICON DEPOSITION PROCESS FOR

IMPROVED SILICIDE INTEGRITY 647

P.K. Roy, A.K. Nanda, and J.A. Taylor

MODELING OF BORON DIFFUSION IN POLYSILICON-ON-SILICON

LAYERS 653

Akif Sultan, Shubneesh Batra, Melvyn Lobo, Keunhyung Park,and Sanjay Banerjee

DEPOSITION OF POLYCRYSTALLINE SILICON THIN FILMS BY

PLASMA ENHANCED CVD 659

Russell E. Hollingsworth and Pawan K. Bhat

RAMAN STUDIES OF HEAVILY DOPED POLYCRYSTALLINE Si

FILMS PREPARED BY EXCIMER-LASER-ANNEALING OF DOPED

a-Si:H 665

M.E. Savage, U. Jayamaha, A. Compaan, A. Aydinli, and

Dashen Shen

Si FILM GROWTH BY SUPERCOOLING OF A MOLTEN Si ALLOY FILM 671

R.L. Wallace, J. Yi, and W.A. Anderson

xii

PART VIII: LASER AND THERMAL PROCESSING

*PULSED-LASER ANNEALING OF SILICON FILMS 679

T. Sameshima

*POLYSILICON THIN FILMS AND DEVICES PRODUCED BY LOW-

TEMPERATURE (600°C) FURNACE CRYSTALLISATION OF

HYDROGENATED AMORPHOUS SILICON (a-Si:H) 691

T.E. Dyer, J.M. Marshall, W. Pickin, A.R. Hepburn, and J.F. Davies

EXCIMER LASER INDUCED CRYSTALLIZATION OF THIN AMORPHOUS

Si FILMS ON Si02: IMPLICATIONS OF CRYSTALLIZED MICRO-

STRUCTURES FOR PHASE TRANSFORMATION MECHANISMS 703

H.J. Kim, James S. Im, and Michael O. Thompson

LARGE-GRAIN DOPED POLY-Si FILMS FABRICATED USINGNEW EXCIMER LASER ANNEALING TECHNIQUE 709

Hiroshi Iwata, Tomoyuki Nohda, Satoshi Ishida, Takashi Kuwahara,Keiichi Sano, Hiroyuki Kuriyama, Shigeru Noguchi, Hiroshi Hanafusa,

Keiichi Kiyama, Shinya Tsuda, Shoichi Nakano, and Yukinori Kuwano

HIGH SUBSTRATE TEMPERATURE (420°C) EXCIMER LASER

CRYSTALLIZATION OF HYDROGENATED AMORPHOUS SILICON 715

R. Carluccio, A. Pecora, G. Fortunato, J. Stoemenos, and

N. Economou

CONTROL OF POLYSILICON EMITTER BIPOLAR TRANSISTOR

CHARACTERISTICS BY RAPID THERMAL OR FURNACE ANNEAL

OF THE POLYSILICON/SILICON INTERFACE 721

S. Bhattacharya, M. Lobo, L. Jung, S. Banerjee, R. Reuss,

S. Batra, K. Park, and G. Hu

HIGH-QUALITY POLYCRYSTALLINE SILICON THIN FILMS

PREPARED BY SOLID PHASE CRYSTALLIZATION (SPC) METHOD 727

T. Matsuyama, T. Baba, M. Tanaka, S. Tsuda, H. Nishiwaki,

S. Nakano, H. Hanafusa, and Y. Kuwano

I-V CHARACTERISTICS AND INTERFACE PROPERTIES OF

Al-Si(P) CONTACTS BY THE KrF EXCIMER LASER INDUCED

RECRYSTALLIZATION 733

K. Sohn, H. Lee, and D.A. Hensley

PHOSPHORUS GLASS DOPING OF POLYCRYSTALLINE SILICON

DURING RAPID THERMAL ANNEALING 739

Bouchaib Hartiti, Abdelilah Slaoui, Roland Stuck, Jean-Claude Muller,and Paul Siffert

A NEW ANNEALING METHOD TO OBTAIN HIGH QUALITY POLY-Si 745

Yoon-Ho Song, Jong-Tae Baek, Kee-Soo Nam, and Sang-Won Kang

CRYSTALLIZATION OF a-Si FILMS ON LOW-MELTING-POINT GLASS

SUBSTRATES 751

W.K. Park, G.S. Chae, E.I. Givargizov, A.B. Limanov, and

A.N. Kiselev

PART IX: IH-V QUANTUM WIRES AND DOTS

*GaAs QUANTUM DOTS BY MOCVD 759

Takashi Fukui and Seigo Ando

*Invited Paper

xiii

A SELECTIVE GROWTH OF GaAs MICROCRYSTALS GROWN ON

Se-TERMINATED GaAlAs SURFACE FOR THE QUANTUM WELL

BOX STRUCTURE 765

Toyohiro Chikyow and Nobuyuki Koguchi

HETEROGENEOUS REACTIONS OF GaAs QUANTUM DOTS WITH

ORGANOMETALLIC PRECURSORS 771

Winston A. Saunders, Robert B. Lee, Harry A. Atwater,

Kerry J. Vahala, Richard C. Flagan, and Peter C. Sercel

OPTICAL PROPERTIES OF InGaAs/InP QUANTUM WIRES DEFINED

BY HIGH VOLTAGE ELECTRON BEAM LITHOGRAPHY AT 200 kV 777

P. lis, M. Michel, A. Forchel, I. Gyuro, P. Speier, and

E. Zielinski

TWO-DIMENSIONAL DAMAGE DISTRIBUTIONS INDUCED BY

LOCALIZED ION IMPLANTATIONS 783

M.M. Faye, L. Laanab, J. Beauvillain, A. Claverie, C. Vieu,and G. Benassayag

STUDIES OF QUANTUM DOTS FABRICATED BY COMBINING AEROSOLAND PLASMA ETCHING TECHNIQUES 789

Lars Samuelson, Ivan Maximov, Anders Gustafsson, Xiao Liu,Werner Seifert, Hans-Christen Hansson, and Alfred Wiedensohler

ORIGIN OF BLUE SHIFTS IN QUANTUM-WELL WIRES UNRELATED TO

LATERAL CONFINEMENT 795

Anders Gustafsson, X. Liu, I. Maximov, L. Samuelson, and

W. Seifert

MICROCAVITY EFFECTS IN THE LUMINESCENCE OF GaAs

MICROCRYSTALS 801

S. Juen, K.F. Lamprecht, R. Rodrigues, and R.A. Hopfel

A SCANNING TUNNELING MICROSCOPY STUDY OF MBE-GROWN

GaAs(001)-FACETED SURFACES 807

R. Maboudian, V. Bressler-Hill, X.-S. Wang, K. Pond, P.M. Petroff,and W.H. Weinberg

INVESTIGATION OF MISFIT DISLOCATION CONFIGURATIONS IN

MBE-GROWN InGaAs LAYERS ON MISALIGNED GaAs(OOl)SUBSTRATES 811

P. Werner, N.D. Zakharov, Y. Chen, Z. Liliental-Weber,J. Washburn, J.F. Klem, and J.Y. Tsao

GROWTH OF GaAs EPITAXIAL MICROCRYSTALS ON A S-TERMINATED

GaAs(OOl) BY VLS MECHANISM IN MBE 815

Nobuyuki Koguchi, Keiko Ishige, and Satoshi Takahashi

LUMINESCENCE STUDY OF WET CHEMICALLY ETCHED InP/InGaAs-

SUBMICRON-STRUCTURES 821

B. Jacobs, H. Zull, A. Forchel, I. Gyuro, P. Speier, and E. Zielinski

ELECTRON RELAXATION IN MULTISUBBAND GaAs QUANTUMWIRE 827

Salviano A. Leao, Oscar Hipdlito, and Frangois M. Peeters

MAGNETOPOLARONS IN QUANTUM-WELL WIRES 833

L. Wendler, R. Haupt, A. Chaplik, O. Hipdlito, and F. Osdrio

xiv

PART X: II-VI QUANTUM WIRES AND DOTS

SOLUTION PRECIPITATION OF CdSe QUANTUM DOTS 841

Cherie R. Kagan and Michael J. Cima

THIRD-ORDER OPTICAL NONLINEARITIES OF QUANTIZED CdSAND METAL ULTRAFINE PARTICLES CO-DISPERSED IN POLYMER

MATRICES-SURFACE MODIFICATION EFFECT 847

Hiroshi Yao and Toyoharu Hayashi

COMPOSITE SEMICONDUCTOR NANOPARTICLES 853

H.S. Zhou, I. Honma, H. Komiyama, and J.W. Haus

PREPARATION AND CHARACTERIZATION OF GROUP 12 THIOLATECOMPLEXES AND EVALUATION OF THEIR POTENTIAL AS

PRECURSORS FOR II-VI SEMICONDUCTORS 859William S. Rees, Jr., Gertrud Krauter, and Virgil L. Goedken

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF CdSxSefl x,

NANOPARTICLES 865Edward B. Stokes and Peter D. Persans

OPTICAL PROPERTIES OF METAL COATED PARTICLES 871

Joseph W. Haus, H.S. Zhou, I. Honma, and H. Komiyama

PART XI: OTHER NANO/MICRO-CRYSTALLINE STRUCTURES

PIEZORESISTIVITY OF POLYCRYSTALLINE DIAMOND FILMS 879

Der-Rern Wur and Jim L. Davidson

TEM INVESTIGATION OF Si//?FeSi2/Si (100) AND (111) HETERO-

STRUCTURES FORMED BY Fe IMPLANTATION 885

C.W.T. Bulle-Lieuwma, D.J. Oostra, and D.E.W. Vandenhoudt

ELECTRICAL AND OPTICAL PROPERTIES OF INDIUM DOPED ZINC

OXIDE FILMS PREPARED BY ATMOSPHERIC PRESSURE CHEMICAL

VAPOR DEPOSITION 891

Jianhua Hu and Roy G. Gordon

RAMAN SCATTERING STUDY OF BORON DOPED DIAMOND

SYNTHESIZED AT HIGH PRESSURE 897

Hiromu Shiomi, Dimitry Kirillov, and Stig B. Hagstrom

NONLINEAR OPTICAL PROPERTIES OF Au COLLOID-DOPED

GLASSES 903

Kohei Kadono, Toru Sakaguchi, Hajimu Wakabayashi, Toshio Fukumi,Hiroshi Yamanaka, Masaru Miya, and Hiroshi Tanaka

OPTICAL PROPERTIES OF COLLOIDAL MoS2 909

G.A. Wagoner, P.D. Persans, and A.F. Ruppert

CHARACTERISATION OF POLYCRYSTALLINE THIN FILMS OF

TELLURIUM 915

A.K. Ray, C.A. Hogarth, and R. Swan

STUDY OF SOLAR CELLS BY SEM DARK VOLTAGE CONTRAST 921

S. Mil'shtein, S. Iatrou, D. Kharas, R.O. Bell, and D. Sandstrom

MICROCHARACTERIZATION OF CuInSej GROWN BY COEVAPORATION

AND SELENIZATION 927

M.H. Bode, M.M. Al-Jassim, J. Tuttle, and D. Albin

XV

DEPOSITION OF FLUORINE DOPED TUNGSTEN OXIDE THIN FILMSBY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION 933

James W. Proscia, Charles H. Winter, Gene P. Reck, and

Gang Gang Wen

QUANTUM SIZE EFFECT IN METAL COATED NANOPARTICLES 939H.S. Zhou, I. Honma, H. Komiyama, and J.W. Haus

AUTHOR INDEX 945

SUBJECT INDEX 951

xvi