microwavw waveguide questions

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1. Derive the ABCD matrices for the single series, single shunt, pi, tee and transformer 2-port circuits. 2. Derive the table in textbook that converts ABCD, Z, Y and hybrid parameters into each other. 3. Repeat the example problem of a high frequency transistor with a feedback resistance and obtain the plots. Plot the 3 dB bandwidth of the transistor vs the gain. 4. Obtain the S 11 for the equivalent 2-port network with OC load conditions. Hence generate the S 11 for the loaded network. To do this it is easiest to work with Γ L , rather than Z L . Are there loads for which the network will have oscillations? 5. Use the above matrices and obtain the two port representation of a high frequency transistor with parasitic components (Prob- lem 4.12). Add a feedback resistor R. Plot S 11 and S 21 on the Smith Chart from 0.5GHz to 4GHz of the the arrangement for R = 1KΩ and 100KΩ, parasitic capacitances 10 pF and parasitic inductances 1nH. The transistor values can be taken from the example problem. (I am not sure that I have chosen the R values correctly, so the plots may not differ much). 1

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Microwavw waveguide questions

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  • 1. Derive the ABCD matrices for the single series, single shunt, pi, tee and transformer 2-port circuits.

    2. Derive the table in textbook that converts ABCD, Z, Y and hybrid parameters into each other.

    3. Repeat the example problem of a high frequency transistor with a feedback resistance and obtain the plots.

    Plot the 3 dB bandwidth of the transistor vs the gain.

    4. Obtain the S11 for the equivalent 2-port network with OC load conditions. Hence generate the S11 for the loaded network. Todo this it is easiest to work with L, rather than ZL. Are there loads for which the network will have oscillations?

    5. Use the above matrices and obtain the two port representation of a high frequency transistor with parasitic components (Prob-lem 4.12). Add a feedback resistor R. Plot S11 and S21 on the Smith Chart from 0.5GHz to 4GHz of the the arrangement forR = 1K and 100K, parasitic capacitances 10pF and parasitic inductances 1nH. The transistor values can be taken fromthe example problem. (I am not sure that I have chosen the R values correctly, so the plots may not differ much).

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