mitsubishi igbt module - cm450dy-24s 1 · pdf filepower module dimensions back ... mitsubishi...

© 2012 by SYSTEM PLUS CONSULTING, all rights reserved. Mitsubishi IGBT Module - CM450DY-24S 1

DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic

estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is

made of the contents of this report. The quoted trademarks are property of their owners.

January 2013 – Version 3

Written by: Sylvain Hallereau

21 rue La Nouë Bras de Fer - 44200 Nantes - France

Phone : +33 (0) 240 180 916 - email : [email protected] - website : www.systemplus.fr

http://www.systemplus.fr/



Table of Contents Executive Summary 2

Hypothesis 3

Table of Contents 4

1. Technology Analysis of the module 7

Power Module Dimensions

Power Module Disassembly

Transistors and Diodes

Wire bondings

Cross-section

AlN Substrate

2. Technology Analysis – IGBT Die 21

IGBT Die Dimensions

About the cross-sections

Die Thickness & Gate Contact

IGBT Transistor Cross-section

Dopant profiling of IGBT by SCM

IGBT Transistor Structure

IGBT Back Side SRP depth profile

Mitsubishi CSTBT 6Th generation

Synthesis

3. Technology Analysis – Diode Die 45

4. Manufacturing Process flow 54

IGBT Process Flow

Diode Process Flow

AMB Substrate Process Flow

Module Process Flow

5. Cost Analysis 65

Economic Analysis Hypotheses

5.1 IGBT 67

Component Summary

Wafer Fabrication Unit

Back-End

Yield Summary

Unprobed Wafer Cost

Die Cost

5.2 Diode 80

5.3 Module 93

AMB Substrate Cost

Module Cost

Final Test Cost

Component Cost

5. Selling Price Estimation 104

Selling Price Estimation

Manufacturer Ratios

Manufacturer Price

Glossary 108

Contact 109



Dual Half Bridge

The CM450DY-24S power module is a

dual half-bridge of 1200V 410A.



Transistors and Diodes

C2E1

Without the silicone gel on the transistors

C1 E2

G2

E2

E1

G1

IGBT 2

Dio

de

1

Diode 2

IGB

T 1

Metal inserts

in the housing



IGBT Die

• Die dimensions:

XXmm x XXmm=XXmm²

• Thickness = XXµm

• Bondings diameters: 400µm (x16)

• There is no marking on the die.

• The guard ring prevents from leakage

current.

Guard ring

Gate Pad

Emitter power contact is in aluminum

In orange, the SiN

passivation

Gate Supply

line



Cross-section Gate

Pad Emitter

Tungsten plug

Contact between the

emitter pad and the silicon

N+ doping

P doping

Trench gate

Pitch between two gates = XXµm

6 dummy pads

between each gate

Pitch between two trenches = XXµm

Cross-section - Trench Gate + dummy gates

The Carrier storage doping

is too weak and is not

revealed.

XXµm



Topography Image SCM Image

n - substrate

p p p p

n+ n+

Tungsten plug

n+ doping (trench gate)

p doping (dummy gate)

p doping (trench gate)

Trench gate

Pitch between two gates = xx µm

6 dummy gates

- n+ doping depth (trench gate) : xxum

- p doping depth (trench gate) : xx um

- p doping depth (dummy gate) : xx um

n doping (Carrier Storage layer)

p p p p n+ n+

p p p p n+ n+

p

n - substrate

Dopant profiling of IGBT by SCM

N doping (carrier storage) have a rounded shape.

The implantation is probably performed through a mask.



Trench Gate Connexion

Cross-section tilted view

Polysilicon

Gate trench

Contact between the

polysilicon of the trench

and polysilicon layer

Top view optical Polysilicon details.



CSTBT Transistor Process Flow 1/2



Breakdown per process step - Front side 1/2



Module Cost

• The Module assembled cost is estimated between $XX and $XX according to the yield.

• The added value cost $XX

• The scrap cost (XX%) of the module added value, is the total of all the losses during the assembly and the test.



Contact


mitsubishi igbt module - cm450dy-24s 1 · pdf filepower module dimensions back ... mitsubishi...

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