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MODULE TITLE : OPERATIONAL AMPLIFIERS
TOPIC TITLE : OP-AMP PERFORMANCE
LESSON 5 : SELECTING AN OP-AMP
OA - 2 - 5
© Teesside University 2011
Published by Teesside University Open Learning (Engineering)
School of Science & Engineering
Teesside University
Tees Valley, UK
TS1 3BA
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________________________________________________________________________________________
INTRODUCTION________________________________________________________________________________________
This lesson discusses some of the criteria that might be relevant when
choosing an op-amp for a particular application. There are literally hundreds
of op-amps to choose from and we will need to be able to whittle the choice
down to find the optimum overall specification for our particular application.
The selection process is further complicated by manufacturers offering the
same or very similar op-amps but under their own manufacturer's codes.
An example is given of a web-based package that can help us in our selection.
The choice offered, though, is of course limited to that manufacturer’s range.
________________________________________________________________________________________
YOUR AIMS________________________________________________________________________________________
Upon completing this lesson you should be able to:
• indentify the need to match an op-amp to its source, load and
available power supply
• select an op-amp based upon parameter performance (bandwidth,
slew rate, quiescent current, noise, etc.)
• finalise a selection based on other features such as packaging, cost
and availability.
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________________________________________________________________________________________
THE IDEAL AND ACTUAL OP-AMP________________________________________________________________________________________
Before going on to look at how we might select a particular operational
amplifier from the thousands of available possibilities, it is worth our while
first pausing to refresh our memories as to how an ideal operational amplifier
should perform. TABLE 1 shows how the performance of an ideal op-amp
compares to an average practical op-amp. The ideal op-amp will, of course,
suit all occasions and applications.
TABLE 1 Ideal vs Practical Op-Amp
–
+
Ideal op-ampAVin
VoutVin
Rout = 0Rin = ∞
–
+
Practical op-amp
AVin
VoutVin
RoutRin
Open loop gain A
Bandwidth BW
Input impedance Zin
Output impedance Zout
Output voltage Vout
CMRR
Ideal
Infinite
Infinite
Infinite
0 Ω
Vout
= AD
(V+
– V–)
AD
= differentialmode gain
Infinite
Practical
105
10 - 100 Hz
>1 M Ω
10 - 100 Ω
Vout
= AD
(V+ – V
–) + A
C (V
+ + V
–)/2
AC
= common mode gain
10 - 100 dB
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The extract given in TABLE 2, from the data sheet for the general purpose
'741' op-amp, gives some idea of the range of parameters that might be
relevant to a particular op-amp application. (The meaning of some of the
terminology is given in APPENDIX 1.)
In selecting an op-amp, the designer must sieve through the data sheets to find
parameters that will match the circuit’s specification. The task is of course eased
by experience and also by manufacturers’ software design tools that can list a
selection of their(!) devices that will be suitable for any given circuit. (See Self-
Assessment Question 5 as an example of the use of such a design aid.)
TABLE 2
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________________________________________________________________________________________
WHERE TO BEGIN________________________________________________________________________________________
The starting point in selecting an op-amp is to examine the circuit that it is to
fit into. FIGURE 1 shows a simple op-amp circuit. There are three blocks that
are really external to the op-amp circuit itself and these have been highlighted
as:
• the source
• the load
• the power supply.
Usually these circuit blocks will have already been prescribed so that we have
to design around them. It is the demands set by the source, load and power
supply that will largely determine our choice of op-amp. Let us therefore
consider each of these blocks in turn.
FIG. 1
–
+
+VS
Powersupply
–VS
R3
R2
R1
VS
Signal source
RSRseries
C R
Load Outputsignal
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________________________________________________________________________________________
THE SOURCE________________________________________________________________________________________
In this example the source consists of a Thévenin equivalent
(see opposite) of a voltage generator with its series resistance.
Typically the source will be a transducer (thermocouple,
microphone, strain gauge, photodiode, etc.; see APPENDIX 2
for further details) and it is the nature of the source voltage in
terms of its shape, frequency, bandwidth and amplitude that
will determine several of the most important parameters of the
op-amp.
Suggest some op-amp parameters the nature of the input voltage might define.
...................................................................................................................................................
...................................................................................................................................................
...................................................................................................................................................
...................................................................................................................................................
________________________________________________________________________________________
Some possibilities include:
Gain, bandwidth, slew-rate, input offset voltage and currents.
As can be seen from TABLE 1, the op-amp has an inherently high input
resistance. Remember, though, that this is the input resistance to the op-amp,
not necessarily to the circuit of which it is part. In FIGURE 1 for example the
inverting input is at a virtual earth and so the input resistance as viewed from
the source (i.e. to the left of R1) will be R1. The value of R1 will have to be
chosen to be compatible with the source resistance RS.
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FIGURES 2(a) and (b) show two contrasting examples. In (a) a thermocouple,
which is a voltage source, can be directly connected to the differential inputs of
an instrumentation amplifier. The high input resistance of the op-amp input
maintains the integrity of the input signal.
FIG. 2(a) Thermocouple Amplifier
FIG. 2(b) Photodiode Amplifier
–
+
–5V
+5V
VOUT
RF
ID
VREF
Photodiode
–
+Thermocouple
–5V
+5V
Thermocouplewires
VOUT
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The example of (b) is of a photodiode, which is a current
source. The diode can be modelled by a Norton
equivalent generator as shown opposite. The diode is
reverse biased and its equivalent Norton resistance is of
the order of giga ohms. This resistance is certainly very
much greater than the input resistance to a general
purpose op-amp and connecting the diode directly to its differential input, as in
the case of the thermocouple, would tend to short-circuit the signal. The
circuit of FIGURE 2(b) is a much more satisfactory solution, where the op-
amp is used as a current-to-voltage converter, its output being VOUT = IDRF.
TYPES OF OP-AMP INPUT STAGES
Bipolar Input Stages
The original op-amp employed the basic bipolar junction transistor (BJT) input
stage of FIGURE 3(a). It consists of a 'long-tailed pair' of transistors that act
as a differential voltage amplifier. The amplifier is 'differential' because it
amplifies the difference between its two input voltages. A constant current
source in the 'tail' of the long-tailed pair means that the current through one
transistor can only increase at the expense of the current through the other.
Consider first of all that the voltages on the bases of both transistors are equal
(zero differential voltage). Assuming that the two transistors are identical then
the two collector currents will be equal. This means the output voltage will be
zero as the same voltage is dropped across each collector resistor. Now
consider if, say, the voltage on the base of the left hand transistor were to
increase. This will cause that transistor's collector current to increase and the
collector current in the right hand transistor will decrease by the same amount.
Thus the voltage across the left hand collector resistor will increase and the
voltage across the right hand collector resistor will fall by the same amount. If
the change in collector current is related to the change in base voltage by the
equation ΔIC = kΔVB then the output voltage will change by 2kΔVB.
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Typically, an op-amp with a bipolar input stage will have input resistance of a
couple of mega ohms. More subtle designs can increase this to 20 MΩ or
more, but this will be at the expense of other parameters. In conclusion bipolar
inputs offer:
� Low offset voltage: 10 μV.
� Low offset voltage temperature drift: 0.1 μV/ºC.
� Well-Matched Bias Currents.
� Bias current decrease with temperature increase.
� High Bias Currents: 50nA – 10 μA.
FIG. 3(a)
–VCC
+VCC
Constant currentsource
VINDifferential
input
VOUT
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FET Input Stages
FIGURE 3(b) shows field-effect transistors (FET) input stage. Its operation is
essentially similar to that of the BJT input. FETs have high input resistance
(hundreds or even thousands of MΩ). FETs also have much low bias currents
than BJTs. However the input offset voltage of a FET long-tailed pair is not as
good as that of a BJT.
FIG. 3(b)
There are two kinds of field-effect transistor: the MOSFET (Metal-Oxide-
Semiconductor FET) and the JFET (Junction FET). MOSFETS have the
superior input resistance.
The bias current of a FET op-amp is the leakage current of the gate, which is
of the order of a few tens of fA (10–15 A). However these leakage currents are
highly temperature sensitive and approximately double with every 10°C
increase in operating temperature. This means that the leakage current (say) of
50 fA at 20°C of a FET input will increase to about 50 pA at 125°C. Thus, in
high temperature applications bipolar op-amps might be the choice because
their input bias current decreases with increasing temperature.
Constant currentsource
VINDifferential
input
VOUT
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In conclusion FET inputs offer:
� Very low bias current: 20 fA.
� Offset voltage down to 50 μV (not as good as a BJT).
� Offset voltage temperature drift of ~5 μV/°C (not as good as a BJT).
� bias current doubles every 10°C.
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________________________________________________________________________________________
THE LOAD________________________________________________________________________________________
The demands of the load will determine
the required output properties of the op-
amp. The load can be generally
represented by a RC parallel
combination. The capacitance can be
due to the nature of the load itself and/or
be caused by the track or cable
connecting the op-amp to the load.
At low frequencies the load will be essentially resistive (FIGURE 4(a))
whereas at high frequencies the capacitance will predominate (FIGURE 4(b)).
FIG. 4 Effect of Output Impedance
Ro
Resistive load
(a)
Vo
RLAVD VIN
Ro
Capacitive load
(b)
Vo
CLAVD VIN
Rseries
C R
LoadOutputsignal
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The load acts, along with the output resistance of the op-amp, Ro, as a potential
divider so that the output voltage is given by:
where
Thus
where AVD(LF) is the low frequency gain (f << fc) and is given by
and the corner frequency
At high frequencies (f >> fc),
V A Vf
fo VD LF inc≈ ×( )
fC
R R
R R
c
LL o
L o
=
+
1
2π
A A VR
R RVD LF VD inL
L o( ) ≈ ×
+
V A VZ
Z R
ZR
j R C
VA
j
o VD inL
L o
LL
L L
oVD LF
1 +
1 +
= ××
=
= ( )
ω
ff
f
V
c
in×
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TYPES OF OP-AMP OUTPUT STAGES
Bipolar Output Stages
FIGURE 5 shows the essential features
of a bipolar op-amp's output stage. It
uses two complementary emitter
followers in a 'push-pull' arrangement.
The circuit action is very simple. On
positive excursions of the input signal
(from a previous stage in the op-amp),
the upper, npn, transistor will operate
to produce a replica of the positive half
cycle. On negative excursions of the
input signal, the lower, pnp, transistor
will operate to produce a replica of the
negative half cycle. The purpose of the
two diodes is to reduce 'cross-over distortion' that would be otherwise caused
by the input signal having to exceed the VBE of the transistor before it begins to
operate.
Note that the output is taken from between the transistors' emitters; this means
that the transistors are working in emitter-follower mode. This confers the op-
amp with the required low output resistance. However the configuration
allows the maximum output voltage to swing only to within VBE
(approximately 0.7 volts) of the supply voltage. This might not be an issue for
large values of supply voltage but does represent a large overhead when
operating off, say, a 5 V supply.
Note that only one output transistor is conducting at a time. This means that in
the absence of an input signal neither transistor is conducting, so there is no
output power dissipation in the idle condition. This is an important
consideration in integrated circuits as it reduces heating in the chip.
+VCC
npn
VIN
Bipolar op-amp output stage
VOUT
FIG. 5
–VCC
pnp
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FET Output Stages
FIGURE 6(a) shows a CMOS output stage. The output is taken from the
drains of the two CMOS transistors that form an inverting amplifier. When the
input signal (from a previous stage of the op-amp) is positive the lower
transistor is on and the output voltage is pulled low. When the input signal is
negative the upper transistor is on and the output voltage is pulled high.
In theory the arrangement can give rail-to-rail output voltages but this will
only occur on no load. In practice when operating to a very high resistance
load, the output can reach within tens of millivolts of either supply rail. The
excursion of output voltage is limited by the channel 'on' resistance of the
transistor. This resistance is of the order of 10 to 100 Ω. The channel
resistance causes a straight forward IR volt-drop, so the greater the load current
the lower the output voltage (and consequently the overall gain).
FIGURE 6(b) gives the equivalent output circuit using a complementary pair
of JFETS. This arrangement can also approach rail-to-rail output voltages
when operating with small load currents.
FIG. 6(a) FIG. 6(b)
+VDD
VIN
CMOS op-amp output stage
VOUT
–VDD
+VDD
VIN
JFET op-amp output stage
VOUT
–VDD
D
D
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'RAIL-TO-RAIL' OUTPUT OPERATION
In many applications, especially when operating on low supply voltages, the
output is required to swing right up to the rail voltages. As just mentioned,
above, both the CMOS and JFET output configurations can approach rail-to-
rail operation on very high resistance loads.
The bipolar output of FIGURE 5, however can
never approach closer than VBE of the rail
voltage. FIGURE 7 shows an alternative bipolar
arrangement that (almost) gives rail-to-rail
output. This configuration uses the transistors in
common-emitter (CE) mode rather than as the
emitter-followers of FIGURE 5. (FIGURE 7 is
CE mode because the input is applied between
the base and the emitter and the output is taken
from between the collector and the emitter. Note
that transistors’ collectors are commoned at the
output.) The output voltage is now limited to
just be the saturation voltage, VCE(SAT), of the output transistor. For low load
currents (less than 100 μA), VCE(SAT) is of the order of 10 mV but at higher
load currents VCE(SAT) falls dramatically, e.g. to 500 μV at a load current of
50 mA.
The CE mode of operation also has the benefit of having a higher gain than the
emitter follower mode, which has unity gain. Thus an op-amp with a CE
output will have a higher open-loop gain than the corresponding op-amp with
an emitter-follower output. There is, however, a major disadvantage of
operating the output transistors in CE mode. The output stage has a much
higher output resistance than the emitter-follower configuration. This
handicap is, though, in practice countered by its higher open-loop gain as the
op-amp is invariable used with applied negative feedback, which has the effect
pnp
+VCC
npn
VINVOUT
FIG. 7
–VCC
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of lowering the output resistance. Thus for the same closed-loop the CE
output op-amp can still produce an output resistance comparable to its emitter-
follower cousin.
________________________________________________________________________________________
THE SUPPLY________________________________________________________________________________________
If the avalible power supply is already specified, then it can be a principal
determinate in the choice of op-amp. For example it could be a dual supply of
a given voltage (e.g. ±24, ±15 or ±9 volts). A high voltage would
immediately rule out many types of op-amp. Conversely, op-amps with a high
supply voltage rating may fail to perform at lower voltages (say ±5 V).
The supply voltage will so define the available output voltage swing. If an
output span of ±9 V is required then clearly the supply voltage should be well
in excess of this (say ±12 V).
Matters are further complicated by the wide use of portable, battery-operated
equipment. This has lead to the development of single-supply op-amps
(FIGURE 8) that generally are designed to operate at lower voltages, typically
5 V and below.
FIG. 8
–
+
+VS
Dual power supply
–VS
–
+
+VS
Single power supply
VREF
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In general, we require the output voltage swing of an op-amp to swing
symmetrically about the mid-point of the supply voltage. For a dual-supply
this will normally be about ground (0 volts) as [VS + (–VS)]/2 = 0. The
problem with a single-supply is that the ground potential will be one of the
supplies, so some form of biasing must be used to centre the op-amp's output
voltage at the mid-point of the supply. In FIGURE 8 this is achieved by
feeding a reference voltage, VREF = VS/2, into the non-inverting input of the
op-amp. (See Self-Assessment Question 1.)
The design of single-supply op-amp circuits is more complicated than that for
dual-supply. For more details refer to the literature, e.g. Texas Instruments'
Application Note SLOA030: "Single-Supply Op-amp Design Techniques."
(http://focus.ti.com/lit/an/sloa030a/sloa030a.pdf)
________________________________________________________________________________________
OTHER FACTORS AFFECTING THE CHOICE OF OP-AMP________________________________________________________________________________________
POWER CONSUMPTION
The demands of battery operated equipment have lead to the development of
'micropower' op-amps that consume just a few hundred nA in the quiescent
state. To achieve such low current values, however, high-valued resistors must
be used and this has an adverse affect upon the op-amp's performance in terms
of speed and noise.
Some 'micropower' op-amps are designed to conserve battery life by being able
to shut down when not in use. This is achieved by incorporating a shutdown
terminal that, when pulled to ground, will disabled the amplifier. The output
is placed in a high impedance mode and the supply current reduced to just a
few nA.
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BANDWIDTH / PULSE RESPONSE
We deal with bandwidth and pulse response under the same heading as they
are closely related.
Five parameters that describe the frequency behaviour of an op-amp are:
• unity-gain bandwidth
• gain bandwidth product (GBW)
• gain margin
• phase margin
• full power bandwidth (FPBW).
Three parameters relating to pulse response are:
• slew rate
• rise time
• overshoot.
The slew rate of an op-amp is the maximum rate at which its output voltage
can change without distortion. Slew rate is linked to the FPBW of the op-amp
as the latter is the maximum frequency at which slewing does not occur at the
rated voltage output, Vp. The two parameters are related by the equation:
There is price to pay for an op-amp's high speed (or wide bandwidth) in terms
of the trade-off between speed and power consumption. As a general rule the
higher the speed the greater the power consumption. Conversely, low-power
devices will tend to lack speed.
FPBW =slew rate
p2πV
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Most op-amps are internally compensated to make them unconditionally
stable. This means that their open-loop gain reaches unity before the phase
shift is 180°. The use of uncompensated op-amps, though, can give a flatter
amplitude response and wider bandwidth. Uncompensated op-amps still
require external compensation to give stability but the compensation can be
adapted to meet the demands of the specific circuit application to give
maximum flatness of response, the highest possible bandwidth or the best
achievable pulse response.
PRECISION
A device is precise if it gives the same output at all times for the same input
conditions. Precision is often a required criterion in a design. Environmental
factors such as temperature can affect precision by altering offset voltages and
currents. As mentioned earlier, bipolar input op-amps give superior
performance in terms of offset voltage than FET inputs. However FET inputs
have very much reduced input bias currents. Input bias current flow through
the source resistance and the feedback network to create an offset voltage and
drift. But the input bias current of FETs doubles every 10°C increase in
temperature which might rule them out in high temperature applications.
LOW NOISE
Noise is broadly defined as any unwanted signal. There are two sources of
noise: external and internal, FIGURE 9. External noise can arise from nearby
power sources, pick-up from leads, radio frequency interference, from the
power supply, etc. Internal noise is generated within the device itself and is
present irrespective of the presence of an input signal. All these sources
combine to give a noisy output. Here, however, we shall just consider the
internal noise self-generated within the op-amp circuit.
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FIG. 9
INTERNAL NOISE
The two main sources of internal noise in an op-amp are shot noise and
thermal (or Johnson) noise.
Shot noise exists because electric current consists of the motion of umpteen
charge carriers (electrons in a wire, electrons and holes in a semiconductor).
When viewed on mass, the cumulative motion of these charge carriers gives
the flow of current that of a uniform fluid, but when viewed at the atomic level
the individual motion of the charge carriers is found to randomly fluctuate.
The motion of current in a conductor could be likened to the flow of water in a
stream with a stony bottom. When the water is deep the flow seems uniform
despite the disorder at stream’s bottom. If the stream is shallow, however, the
effect of its uneven bottom becomes apparent as the flow ripples over the
stones. A similar effect occurs as electric current flows through any medium
(be it a metallic conductor, semiconductor, pn junction or whatever) because of
the medium’s unavoidable imperfections. At very low current levels the flow
of current is in fits and starts, as illustrated in FIGURE 10. Shot noise has
been likened to the noise of lead shot being poured onto a metal sheet.
Although the effect of shot noise only becomes significant at very low levels
of current, such low levels can be found in an op-amp.
Pick-up on input leads
Radio frequencyinterference
Internal noise
Power supply noise
Noisy output
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(a) Large current flow (b) Low current flow
FIG. 10
Thermal noise is caused by the thermal agitation of the charge carriers at any
temperature above absolute zero. Thermal energy is imparted to the carriers
that give them a random kinetic energy, making them dart about in a
completely haphazard fashion. FIGURE 11 illustrates the random motion of a
conducting electron within the atomic lattice of a conductor. Although trapped
in the lattice structure, the atoms of the conductor are also in a state of thermal
agitation which causes them to vibrate about a mean position. As the atoms of
the lattice vibrate they will jostle the electrons.
When a voltage is applied across a conductor the conducting electrons will
move in the direction of the resultant electric field. This motion is however
impressed upon the thermal motion. The electrons do not move in a straight
line but tend to drift in the general direction of the applied field.
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FIG. 11
Cacluation of Noise Currents and Voltages
Shot noise is a source of current noise as it represents random variations in the
average value of a current. The rms1 current value of shot noise is given by the
equation:
Thermal noise is a source of voltage noise as it represents random variations
in the average value of a voltage. The rms value of thermal noise is given by
the equation:
________________________________________________________________________________________
1The average value of a shot noise current or a thermal noise voltage is zero. This is because the origins of
such noise is due to completely random events and the currents or voltages produced are as likely to be
positive in amplitude as they are to be negative.
V kTBRthermal = 4
I eI Bshot DC= 2
Vibrating lattice
Random motion ofconducting electron
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where:
• T is the absolute temperature (K)
• k is Boltzmann’s constant (1.38 × 10–23 J K–1)
• e is the electronic charge (1.6 × 10–19 C)
• B is the system bandwidth (Hz)
• IDC is the average direct current (A)
• R is the resistance of the conductor (Ω).
Consideration of these equations shows that:
• Noise is limited by limiting the bandwidth. Systems having wide
bandwidths let through more noise than those having a narrow
bandwidth.
• Shot noise current is independent of temperature.
• Thermal noise voltage increases with increasing temperature.
• Thermal noise voltage increases with increasing conductor
resistance.
The above observations suggest that to minimise noise we should:
• restrict the bandwidth
• keep temperatures low
• keep resistances low.
FIGURE 12 shows the noise model for an op-amp. Although the noise is
internally generated, it is convenient to represent the op-amp as being noiseless
with its internally generated sources of noise presented at its inputs. The
sources of voltage noise are shown lumped together as single source on the
non-inverting input. The current noise sources are shown on both inputs as
their most significant causes are from the input bias currents.
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FIG. 12
UNITS OF MEASUREMENT OF NOISE
Manufacturers' data sheets often only quote the op-amp’s noise voltage. The
equation has units of volts but the value is dependent
upon the bandwith. As the operating frequency range depends on the
application, the data sheet quotes the noise voltage density in terms of volts
per root hertz (V/√Hz or VHz–1/2). Typical values of noise voltage for general
purpose op-amps are in the range of 10 to 20 nV/√Hz whereas low-noise
devices can have values of less than 2 nV√Hz. Current noise can vary from
1pA/√Hz for a bipolar input to less than 1 fA/√Hz for a FET device.
Bipolar input op-amps can generate significant voltage and current noise. The
source of their voltage noise is the thermal noise of the input transistors’ base
resistance. The current noise is generated by shot noise from the base-emitter
junction. The current noise only becomes manifest when it generates a voltage
by flowing through a resistance and can be minimised by keeping the input
impedance low. FET op-amps have significant voltage noise but their current
noise is usually insignificant as their bias currents are so low. At present the
best noise performance is achieved with bipolar-input op-amps rather than with
FET inputs. To take advantage of the bipolar’s low noise voltage, however, the
V kTBRthermal = 4
Current noise
–
+
Voltage noise
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associated circuit's resistances must be kept low. This will create increased
supply current and power disipation. There is nearly always a trade off
between parameters!
Finally, FIGURE 13 shows how the resistors in a simple op-amp circuit add to
the op-amp’s noise. In calculating the total noise performance of the circuit,
the contribution of the thermal noise (VTH1, VTH2, VTH3) from these resistors
must be taken into account along with the op-amps voltage noise VN (current
noise has be ignored).
Self-Assessment Question 2 gives an example of how noise can affect
performance.
FIG. 13
–
+
R3VTHR3
R1VTHR1
R2VTHR2 VN
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OPERATING TEMPERATURE
The effect of temperature on offset voltages and currents was mentioned in the
discussion of input stages. Some applications will require operation in an
extended temperature environment; say –40°C to +125 °C, as might possibly
be demanded by the needs of the automotive or military industries. If a
temperature stipulation is made then this can considerably narrow the range of
suitable op-amps.
PACKAGING
Op-amps come in all types of packaging, FIGURE 14 shows some
possibilities. The package chosen will depend upon the number of op-amps
required per package (single, dual and quad), the size of the package and the
method of manufacture and soldering.
Some high impedance FET op-amps are packaged in glass-sealed hermetic
packages and can have special problems in terms of track layout and
connection if the device’s properties are not to be impaired.
If a high output power is required then a metal can package might be required
perhaps with an associated heat sink.
FIG. 14
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COST AND AVAILABILITY
Whilst not an engineering issue, cost is certainly a most practical one,
particularly in volume production. Availability might be limited to existing
stock or to that held by a preferred supplier.
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________________________________________________________________________________________
SELF-ASSESSMENT QUESTIONS________________________________________________________________________________________
1. Determine the quiescent output of the single-supply op-amp of
FIGURE 15.
FIG. 15
2. An op-amp circuit has a voltage gain of 40 dB, an output voltage swing of
±2.5 V and an equivalent noise voltage input of 1.5 μV. Show if its noise
performance is adequate if its output is presented to a 16-bit ADC.
3. State why a video amplifier might use an uncompensated op-amp.
–
+
C1
R2
10 kΩ
V2
VCC
VCC
10 kΩ
V1
R1
C2
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4. FIGURE 16 shows TLV2771 op-amp used to interface a piezoelectric
sensor to an ADC in a measurement application. The equivalent circuit of
the sensor is a Norton model where CP = 10 nF and RP = 20 MΩ. The
circuit is to operate off two AA batteries (nominally a 3 V supply).
Also given below are some of the principle features of the op-amp.
State reasons why this op-amp is suited for this application.
FIG. 16
–
+
Cf
VCC = 3V
R2
High slew rate 10.5 V/msWide bandwidth 5.1 MHzHigh output drive1 mA of supply current per channelExcellent dc precisionRail-to-rail output swing360 mV input offset voltage17nV/√Hz input noise voltage0.6 fA/√Hz input noise current2pA input bias current1012 Ω differential input resistanceOperates from a 2.5-V to 5.5-V single-supply voltageMicro power shutdown mode (I
DD<1 mA)
TLV2770 Operational amplifier with shutdown
TLV2771Cpqp Rp
Piezoelectric sensor
10 MΩ
R1
VCC2
Vo = ×VCC
2qp
(Cp + Cc) [ ]R1 + R
2
R1+
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5. The web site address below gives access to an example of an op-amp
design aid by Analogue Devices (there are several such web examples
from various manufacturers).
http://designtools.analog.com/dtAPETWeb/dtAPETWizard.aspx
Access the site and use its ‘Parametric Search’ feature to find an op-amp
(by Analogue Devices of course!) that most closely matches the criteria
listed below.
Supplyvoltage
Vos
Ib
Smallsignal
bandwidth
Slewrate
Quiescentcurrent
perpackage
Amplifiersper
package
V Noisedensity
Unitpric(US)
= 5 V 10 mVor
better
100 nAor
better
1 MHzat least
10 V/μsor
better
2 mAor better
2 10nV/√Hzor better
$2 USor less
for1000
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NOTES________________________________________________________________________________________
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ANSWERS TO SELF-ASSESSMENT QUESTIONS________________________________________________________________________________________
1. Starting from first principles:
• V2 = A(V+ – V–) where A is the open loop gain of the op-amp.
• As A is very large, V+ ≈ V–.
• But V+ = VCC/2, so V– = VCC/2.
• Also for dc values, V– = V2.
• Hence V2 = VCC/2.
The quiescent output has been fixed at half the supply voltage as required
by the simple expedient of using a potential divider to half VCC.
2. 40 dB corresponds to a gain of 100.
Thus the output noise is 100 × 1.5 μV = 150 μV.
The op-amp has an output span of 5 V.
The ADC can resolve down to 5/216 = 76 μV.
Thus the least two significant bits of the ADC's output would be swamped
by noise.
The noise performance of the op-amp is inadequate for this application.
N.B. This simple circuit does though have serious drawbacks. The most
obvious one is that of power supply rejection. Any variation in VCC is
directly reflected in the bias applied to the non-inverting input. This will
then appear as a change in the output voltage. Less obviously, the circuit
can become unstable if driving a low output resistance. The associated
large output current can cause fluctuations in VCC which then is fed back to
the input via the potential divider. (In audio amplifiers such oscillations are
referred to as 'motor-boating' because of the resulting audible 'put-put'
output noise.)
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3. A video amplifier requires a wide bandwidth and also a flat amplitude
response. The response of an uncompensated op-amp can be better
optimised to meet these criteria than a compensated op-amp.
4. The most salient point about the signal source is that it is of a very high
impedance. The table below shows the op-amp's properties and
comments made, where possible, as to its suitability.
5. The spreadsheet below has been generated by the selection software. Not
all the selections meet the criteria exactly, these have been highlighted. If
these op-amps are ruled out then there are just three left in the running:
AD8646, AD8616 and AD8647. The designer would now have to make a
decision based upon general performance, cost, packaging options,
availability and perhaps personal preference based upon experience.
PropertyHigh output drive1 mA of supply current per channelExcellent dc precisionRail-to-rail output swing2 pA input bias current360 mV input offset voltage17nV/√Hz input noise voltage0.6 fA/√Hz input noise current1012 Ω differentialinput resistanceOperates from a 2.5V to 5.5Vsingle-supply voltageMicro power shutdown mode (I
DD<1 mA)
CommentPossible advantage if driving an ADCLow power consumptionOf value in this measurement applicationImportant in the low-voltage applicationIndicates a high input impedanceWould need more informationWould need more informationWould need more informationImportant for a voltage amplifierconnected to a high impedance sourceImportant for battery operation
Important for battery operation
???
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Part#
QueryParameter
AD8646AD8616
AD8647OP262
AD8648AD8615
AD8656
AD8652AD8692AD8606AD8666
Smallsignalbandwidth
1 MHz
24 MHz24 MHz
24 MHz15 MHz
22 MHz23 MHz
28 MHz
50 MHz10 MHz10 MHz4 MHz
Vos
=>10 mV/μs
600 μV23 μV
600 μV25 μV
700 μV80 μV
50 μV
100 μV400 μV20 μV600 μV
Ib
=<100 nA
300 fA200 fA
300 fA260 nA
200 fA200 fA
10 pA
1 pA200 fA200 fA200 fA
V noiseDensity
=<10nV/√Hz
6nV/√Hz6nV/√Hz
6nV/√Hz9.5nV/√Hz
6nV/√Hz7nV/√Hz
4nV/√Hz
5nV/√Hz8nV/√Hz6.5nV/√Hz10nV/√Hz
Vcc
- Vee
=5 V2.7 V-5.5 V2.7 V - 6 V2.7 V5.5 V2.7 V- 12 V2.7 V5.5 V2.7 V - 6 V2.7 V5.5 V2.7 V5.5 V2.7 V - 6V2.7 V - 6V5 V - 16 V
Iq
peramplifier
=<2 mA
2 mA2 mA
2 mA775 mA
2 mA1.7 mA
4.5 mA
9 mA1.05 mA1.2 mA1.55 mA
Amplifiersperpackage
2
22
22
41
2222
US price1000-4999
=<$2
$0.61$1.29
$0.71$1.47
$0.88$0.76
$1.11
$1.99$0.64$1.19$0.93
Slew rate
=>10 V/μs
11 V/μs12 V/μs
11 V/μs13 V/μs
12 V/μs12 V/μs
11 V/μs
41 V/μs5 V/μs5 V/μs3.5 V/μs
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________________________________________________________________________________________
SUMMARY________________________________________________________________________________________
In the selection of an op-amp for a given application there will generally be
certain constraints that will narrow the selection process. For example, if the
design demands a 2.5 V single-supply then this will dramatically limit the
available choice. Having found all the devices that meet this criterion, the task
now is to make a decision based upon the other design criteria (slew rate, noise
performance, etc.) and upon cost and any packaging requirements.
The table below attempts to summarise some of the factors that can be of
influence in the choice of an op-amp. There is no particular factor that is
dominant – this will depend upon the application and the associated system
specification.
SupplySingle-supplyDual supplyBattery/mains
Signal sourceImpedanceCurrent/voltageSignal magnitude
LoadImpedanceRail-to-railVoltage swing
ParametersBandwidthNoiseSlew rateQuiescent currentGain
OtherCostpackageAvailabilityTemperature
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APPENDIX 1: SOME OP-AMPS TERMINOLOGY________________________________________________________________________________________
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APPENDIX 2: SOME TRANSDUCER CHARACTERISTICS________________________________________________________________________________________
Transducer
Thermistor
Thermocouple
Resistance temperaturedetector (RTD)(In bridge cicuit)
Float level sensor
Load cell(Strain gauge)
Photodiode
Transducer
ΔR: Resistance changes with temperatureR=k exp(–ve temp coefficient)Highly non-linearΔV: Thermoelectric voltageV
T = kT
10 μV/°C to 100 μV/°CLinearΔR: Resistance changes with temperatureR = R
0(+ temp coefficient)LinearΔR: Resistance changes with levelOutput of mV to several voltsLinearΔR: Resistance changes with applied strainΔR = eGR0
LinearΔI: Current changes with light intensity1 pA to 1 μA
BT( )
( )1 + αT + βT 2)
Typical Outputresistance50 Ω to 1 M Ω
20 Ω to 20 k Ω
100 Ω to 1000 Ω
100 Ω to 2 k Ω
120 Ω to 1 k Ω
109 Ω
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