molecular dynamics simulation of thermal conduction over silicon-germanium interface
DESCRIPTION
Molecular Dynamics Simulation of Thermal Conduction over Silicon-Germanium Interface. Ruxandra Costescu Erica Saltzman Zhi Tang. Purpose. Thermal conductivity ( ) a measure of thermal transport - PowerPoint PPT PresentationTRANSCRIPT
Molecular Dynamics Simulation of Thermal Conduction over Silicon-Germanium Interface
Ruxandra CostescuErica Saltzman
Zhi Tang
Purpose Thermal conductivity () a measure of
thermal transport behavior across interfaces is little-
understood and drastically different from bulk behavior; interface thermal conductance (C) is significant for ultra-thin films (~100 nm).
Si and Ge are important to semiconductor and microelectronics industries
Previous Research
Multilayer and superlattice structures have been investigated experimentally and through simulation, but the behavior across a single-interface remains poorly described and explained (4).
Several MD methods have been attempted: Direct MD, which exhibits inefficient convergence (2) Equilibrium MD, which is strongly dependent on the initial
conditions and has a slowly-converging autocorrelation function (2).
MD with non-equilibrium thermodynamics (thermostat and zero-limited thermal force) yields best results (11).
Geometry
Visualization of silicon-germanium beam. Yellow spheres represent germanium atoms; green spheres represent silicon atoms.
Hot and cold baths in silicon-germanium beam.
Boundary Conditions Periodic in lateral dimensions Hard-wall in longitudinal dimension
Temperature Regulations Initial conditions: hot, cold, and
intermediate temperatures Velocity rescaling in hot and cold
reservoirs
Tersoff Potential
Parameters
Calculations
ResultsSimulation results:
Temperature profile Thermal flux
Typical data
At 120 K
Thermal conductivity
T (K) 62.9 80.8 142 146 164
(W m-1 K-1) 0.358 0.430 0.264 0.278 0.305
eq (W m-1 K-1) 0.420 0.482 0.616 0.621 0.633
NOTES:•In addition: one run at 77.1 K (with opposite direction of thermal gradient) and another run at 19.1K •Used: Fe= 0.2 Å-1 (2)
Results CalculationsResults
Results Interface conductance results
Calculations
1.00E+06
1.00E+07
1.00E+08
1.00E+09
50 70 90 110 130 150 170
Temperature (K)
Th
erm
al c
on
du
ctan
ce (
W m
-2 K
-1)
~DMM
Results
Si+Ge(MD) smaller than eq as expected and the right order of magnitude; but dependence on temperature unclear
DMM prediction of ~108 W/(m2 K) at 80 K reasonably close to calculated range of CSi/Ge
Our values range from ~ 2 - 5 107 W/(m2 K) the right order of magnitude of C
Preliminary calculation for opposite direction of temp. gradient shows drastically different behavior (approximations fail?)
Discussion
Results
Fe (“fictitious force”) quantum correction direction of temperature gradient interface geometry compare t.c. results to exactly
equivalent experimental data
Improvements & further study
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