monolithic active pixel sensors: recent progressidlab/presentations/... · g. varner, monolithic...
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Monolithic Active Pixel Sensors:Recent Progress
Gary Varner (University of Hawaii)for the Belle Pixel Group
M. Barbero, T.Browder, F.Fang, M.Hazumi, N.Kent, S.Olsen, H.Palka, L.Ruckman, S.Stanic, K.Trabelsi, T.Tsuboyama, K.Uchida, G.Varner
KEK, Krakow INP, Univ. of Hawaii, Tsukuba Univ.
Hiroshima STD 5
R&D for Belle SVD Upgrades R=1cm / L>=3x1035
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1G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Basic Technology: Standard CMOS
CMOS Camera ParticleDetector
Key Features:• q collection via thermal diffusion (no HV)• NO bump bonding• “System on Chip” possible
Standard CMOS:•Low Power•Excellent Transistors•Tight Process Control•Excellent Uniformity•High volume, low cost•Large ADC, DSP base
Because of largeCapacitance, need
Thick DSSDs-- APS can be VERY
Thin
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2G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Promising Results
+UH,RAL,
…
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3G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Development Efforts
Hawaii
LinearCollider
LEPSI,RAL,Strassbourg
LBNL,UC Irvine
Apologies to those not mentioned:Easy access will bring others
. .
World’s Highest
L=1034
Belle Detector
See T. Tsuboyama’s talk
Super-Belle: <=10µs
DESY/Hamburg
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4G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Cont. Acq. Pixels (CAP) 1/2 Prototypes
• TSMC 0.35µm Process
• High speed sampling:
• Explore 10µs latency (CAP1)
• pipeline sampling(CAP2)
Column Ctrl Logic
1.8mm
~6k pixels
• CAP2: 8x mini-pipeline in each cell
Col8
VAS
VddPixel Reset
Sense
Output Bus
REFbias
Col2
Col1Sample1
Sample8
Sample2
• CAP1: simple 3-transistor cell
Pixel size: 22.5 µm X 22.5 µm
Sample of CAP1/CAP2 tested:
all detectors (>15) function.
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5G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Example of Ease of Use
All LVDS digital I/O
300-600Mbaud link
On board ADC
Pixel chip: 132x48=6336 channels
~1mm x 3mm
The 4 F2 boards
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6G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Beam test bench
Beam line
19APR04, Evt22.
X-Y stages
Assembled:
• Base plate• Trigger counters
(small PMTs andtiny scintillators)
• Cables (6m)
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7G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Correlated Double Sampling (CDS)
( - )
Frame 1 - Frame 2 =8ms integration
Hit candidate!
- Leakage currentCorrection
~fA leakage current (typ)~18fA for hottest pixel shown
Can readout/process@ 20Hz ~ 16% live time (CAP1!)
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8G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Initial “by eye”
y
x
Layer-by-layer correlations
And after only 4 iterations…
Det.3 vs Det.1 Det.3 vs Det.2 Det.3 vs Det.4
In X
In X
Det.3 vs Det.2 Det.4 vs Det.2 Det.4 vs Det.3
~1mm x 3mm “rice grain”
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9G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Improved Alignment
L1
L2
L3
L4
beam
Det.3 vs Det.1 Det.3 vs Det.2 Det.3 vs Det.4
In X
In Y
“online” plot
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10G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Hits! alignment proof
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11G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Resolution: GEANT Expectation
3µm input resolution
250um Si1mm plastic
1mm Alumina substrate
3.4 cm3.6 cm4.6 cm
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12G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Track Fitting / Residuals
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13G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Resolution -- very preliminary
Current Residuals:-11um in x plane-14um in y plane
L3L4
L2
“hit”
x-plane
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14G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Critical R&D Items
1. Readout Speed1. STAR phase 1, (x)LC OK(?), RAL efforts
2. Next R&D for Super B
2. Radiation Hardness1. TESLA, STAR 1012 neq, >100kRad ionizing
2. Super-B: low E e-/γ CAP -- results shown next
3. Thin Detector - LBNL
4. Full-sized detector - LEPSI
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15G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Critical R&D Items
1. Readout Speed1. STAR phase 1, (x)LC OK(?), RAL efforts
2. Next R&D for Super B
2. Radiation Hardness1. STAR 10^12…
2. Super-B: low E e-/γ CAP -- results shown next
3. Thin Detector
4. Full-sized detector
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16G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Irradiation leakage currents
0.35um CMOS APS Leakage Current
100
1000
10000
100000
1000000
10000000
0.001 0.01 0.1 1 10 100
Radiation [MRad]
Leak
age
curr
ent [
pA/c
m2]
Eid et al.no anneal14 hr 60C
Proper annealing is still to be done
Belle CAP1 Prototype
IEEE Trans. Nucl. Sc. 48, 1796-1806,2001
Leakage Current [fA]
# of
pix
els
Before irrad.
200 Krad
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17G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
MPV peak projections
SNR (MPV peak) vs. Irradiation (300e- signal, 16e- system noise)
0
2
4
6
8
10
12
14
16
18
20
0.01 0.1 1 10 100
Radiation dose [MRad]
Pea
k P
ixel
Sig
nal-t
o-No
ise
Ratio
(SN
R)
8ms10us100us1ms
Extrapolation from upper edges of Eid et al.
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18G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Composite Plans
• Full-sized detectors:• ENC degradation is large array
(availability of stitching?)
• Mechanics, power and cooling
• Data Handling (“The fire hose problem”)• High speed readout• On-chip sparsification/processing
• Further Radiation Damage Studies:• Demonstrate operation capability with highly irradiated
detectors. (charge collection degradation)
• Precision dicing, handling and wire-bonding thin detectors
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19G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Back up slides
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20G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Required Transfer Rates
• CAP1 architecture (if 10µs max. latency):– 15mm radius:
– 67 Gpixels/s
– ~1Gpixel/s/pin
– 10mm radius– 39 Gpixels/s
– ~0.5Gpixel/s/pin
• CAP2 architecture (>= 100µs max. latency):– 15mm radius:
– 6.7 Gpixels/s
– ~100Mpixel/s/pin
– 10mm radius– 3.9 Gpixels/s
– ~50Mpixel/s/pin
Two ways around: - Multi-orbit
- “Tiling”
Real max. latencySet by <L1/L2> rate
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21G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Toy Monte Carlo
Noise Dependence
02468
1012141618
0 10 20 30
Noise [e-]
Res
olut
ion
[um
]
3x3
5x5
• random hits• diffusion simulation:- substrate loss- recombination- add noise
• reconstruct track using c.o.g. and compare
I got interested in the issue ofNoise dependence
Intrinsic could be as good as 3um:
Alignment errors and multiple-scattering will likely dominate
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22G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Test Beam/π2-areaShifters / chipsters
B2 / ACQ monitoringempty tables (1st day)
CAP targets ! / “do not touch” sign
4 F2s / Pixel Sensor/ 1st very rough alignment
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23G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Single Plane Efficiency
Preliminary: 98.5 +/-3.5%
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24G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Uniformity
Outer 2x rows/columns excluded
Less than 10 hot pixels excluded per layer: pixel yield >99%
Unfolded det.1 Unfolded det.2
Unfolded det.4Unfolded det.3
Det.3
Det.1
Det.2
Det.4
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25G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
SNR Comparison
SPICE extraction: 3.22 fF +/- 0.6fF? Detector: 14 µm
Q= 1.60E-19 C/e- Q=C*V DSSD ref: 300 µm 24000 e-hole pair/m.I.p.
V= 4.97E-05 V/e- Geom SF: 0.046667
chip transfer: 0.78 Vout/Vin Signal: 1120 e- max produced(SPICE)
Collection 0.5 w.a.g. -- in max channelResistive Divider: 1 was 2:1 efficiency
CAPevF1 amp: 7 gain Peak signal: 560 e-
50 ohm series term: 0.5 voltage divide
CAPevB1 amp: 0.65 gain
Net transfer gain: 1.7745
Sensitivity: 0.088174 mV/e- Expected SNR: 19.75096
CAPevB1 noise: 2.5 ADC lsb noise Sigma Set: 7
CAPevB1 ADC: 1 mV/lsb Threshold: 60
CAPevB1 sensitivity: 11.34122 e-/lsb m.I.p exp. 49.37739
CAPevB1 floor: 28.35306 e-
Cextract = 3.2+/-0.6fF
50µV/e-
Signal max.~ 560e-
10-bitADC
1mV/lsb
1.7x gain
11.3e-/lsb
~28e- noise(CM)
Best in literature~10e- noise
Even so, SNR ~ 20
60MSa/s possible
88µV/e-
Assuming 50%Signal collection ε
In Max channel
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26G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Octal-pipeline (in 22.5µm2 pixel)
Col8
VAS
VddPixel Reset
Sense
Output Bus
REFbias
Col2
Col1Sample1
Sample8
Sample2
Storage cell
Yes!Random access, decoupled
Read/Write
• 0.35µm Process 8x, more possible
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27G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Charge Spread (pre-rad)
Peak only 3X3 pixels
5X5 pixels7X7 pixels
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28G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
Leakage Current (cont.)
Leakage Current [fA]
# of
pix
els
Before irrad.
200 Krad
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29G. Varner, Monolithic Active Pixel Sensor R&D, STD5 Hiroshima – 15 JUN 04
MIMOSA History