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1

BSC014N04LST

Rev.2.3,2020-03-13Final Data Sheet

12

34

56

78

43

21

56

78

TDSON-8FL(enlargedsourceinterconnection)

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

MOSFETOptiMOSTMPower-MOSFET,40V

Features•Optimizedforsynchronousrectification•175°Crated•Verylowon-stateresistanceRDS(on)•100%avalanchetested•Superiorthermalresistance•N-channel,logiclevel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21•Highersolderjointreliabilityduetoenlargedsourceinterconnection

Table1KeyPerformanceParametersParameter Value UnitVDS 40 V

RDS(on),max 1.4 mΩ

ID 205 A

Qoss 54 nC

Qg(0V..10V) 61 nC

Type/OrderingCode Package Marking RelatedLinksBSC014N04LST TDSON-8 FL 014N04LT -

1) J-STD20 and JESD22

2

OptiMOSTMPower-MOSFET,40VBSC014N04LST


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID

-----

-----

20514517612433

A

VGS=10V,TC=25°CVGS=10V,TC=100°CVGS=4.5V,TC=25°CVGS=4.5V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W2)

Pulsed drain current3) ID,pulse - - 820 A TC=25°CAvalanche current, single pulse4) IAS - - 50 A TC=25°CAvalanche energy, single pulse EAS - - 170 mJ ID=50A,RGS=25ΩGate source voltage5) VGS -20 - 20 V -

Power dissipation Ptot--

--

1153.0 W TC=25°C

TA=25°C,RthJA=50K/W2)

Operating and storage temperature Tj,Tstg -55 - 175 °C -

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case,bottom RthJC - 0.8 1.3 K/W -

Thermal resistance, junction - case,top RthJC - - 20 K/W -

Device on PCB,6 cm2 cooling area2) RthJA - - 50 K/W -

1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperatureat 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actualenvironmental conditions.2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.3) See Diagram 3 for more detailed information4) See Diagram 13 for more detailed information5) The negative rating is for low duty cycle pulse occurrence. No continuous rating is implied

4



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mAGate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=40V,VGS=0V,Tj=25°C

VDS=40V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

1.51.1

1.91.4 mΩ VGS=4.5V,ID=50A

VGS=10V,ID=50A

Gate resistance1) RG 0.45 0.9 1.8 Ω -

Transconductance gfs 120 230 - S |VDS|>2|ID|RDS(on)max,ID=50A

Table5DynamiccharacteristicsValues


Input capacitance1) Ciss - 4300 6020 pF VGS=0V,VDS=20V,f=1MHzOutput capacitance1) Coss - 1200 1680 pF VGS=0V,VDS=20V,f=1MHzReverse transfer capacitance1) Crss - 100 200 pF VGS=0V,VDS=20V,f=1MHz

Turn-on delay time td(on) - 8 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Rise time tr - 9 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Turn-off delay time td(off) - 35 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Fall time tf - 7 - ns VDD=20V,VGS=10V,ID=50A,RG,ext,ext=1.6Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 11 - nC VDD=20V,ID=50A,VGS=0to10VGate charge at threshold Qg(th) - 6.9 - nC VDD=20V,ID=50A,VGS=0to10VGate to drain charge1) Qgd - 9.8 14 nC VDD=20V,ID=50A,VGS=0to10VSwitching charge Qsw - 14 - nC VDD=20V,ID=50A,VGS=0to10VGate charge total1) Qg - 61 85 nC VDD=20V,ID=50A,VGS=0to10VGate plateau voltage Vplateau - 2.5 - V VDD=20V,ID=50A,VGS=0to10VGate charge total1) Qg - 31 44 nC VDD=20V,ID=50A,VGS=0to4.5VGate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to4.5VOutput charge1) Qoss - 54 76 nC VDD=20V,VGS=0V

1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition

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Table7ReversediodeValues


Diode continuous forward current IS - - 115 A TC=25°CDiode pulse current IS,pulse - - 820 A TC=25°CDiode forward voltage VSD - 0.82 1 V VGS=0V,IF=50A,Tj=25°CReverse recovery time1) trr - 32 64 ns VR=20V,IF=50A,diF/dt=400A/µsReverse recovery charge Qrr - 44 - nC VR=20V,IF=50A,diF/dt=400A/µs

1) Defined by design. Not subject to production test

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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 150 175 2000

20

40

60

80

100

120

140

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 25 50 75 100 125 150 175 2000

40

80

120

160

200

240

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-2

10-1

100

101

102

103

1 µs10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-6 10-5 10-4 10-3 10-2 10-1 10010-3

10-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

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Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 1 20

50

100

150

200

250

300

350

400

3.5 V

4 V

4.5 V5 V

10 V

3.2 V

3 V

2.8 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 10 20 30 40 500.5

1.0

1.5

2.0

2.5

3.0

2.8 V

3 V

3.2 V

3.5 V

4 V4.5 V5 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 1 2 3 4 50

80

160

240

320

400

175 °C25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 60 80 1000

80

160

240

320

gfs=f(ID);Tj=25°C

8



Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

3.00

max

typ

RDS(on)=f(Tj);ID=50A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800.0

0.5

1.0

1.5

2.0

2.5

250 µA

VGS(th)=f(Tj);VGS=VDS;ID=250µA

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 10 20 30 40101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.00 0.25 0.50 0.75 1.00 1.25 1.50100

101

102

103

25 °C25 °C, max175 °C175 °C, max

IF=f(VSD);parameter:Tj

9



Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 103100

101

102

25 °C

100 °C

150 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 20 40 600

2

4

6

8

10

12

8 V

32 V

20 V

VGS=f(Qgate);ID=50Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18030

32

34

36

38

40

42

44

46

VBR(DSS)=f(Tj);ID=1mA

Diagram Gate charge waveforms

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5PackageOutlines

1

10:1

Z8B000193699

REVISION

ISSUE DATE

EUROPEAN PROJECTION

03

19.06.2019

0 3mm

DOCUMENT NO.

1.27

MILLIMETERSDIMENSION

0.90 1.20

D1

A

b

D

D2

E

E1

E2

e

L

0.26 0.54

0.02 0.23

3.88 4.42

0.69 0.90

MIN. MAX. SCALE

2

M 0.45 0.69

0.15 0.35A1

3.70 4.40

4.80 5.35

5.70 6.10

5.90 6.42

Figure1OutlineTDSON-8FL,dimensionsinmm

11



PG-TDSON-8FL: Recommended Boardpads & Apertures

Figure 2 Outline Boardpads (TDSON-8 FL)

12

OptiMOS TM Power-MOSFET , 40 VBSC014N04LST

Rev. 2.3, 2020-03-13Final Data Sheet

Figure 3 Outline Tape (TDSON-8 FL )

13

OptiMOS TM Power-MOSFET , 40 VBSC014N04LST

Rev. 2.3, 2020-03-13Final Data Sheet

Revision HistoryBSC014N04LST

Revision: 2020-03-13, Rev. 2.3

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2017-03-01 Release of final version

2.1 2017-10-30 Insert footnote under Vgs

2.2 2020-02-07 Update package drawings and Qrr

2.3 2020-03-13 Update current rating

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

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Published byInfineon Technologies AG81726 München, Germany© 2020 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .

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InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/orautomotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if afailure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation andaerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it isreasonable to assume that the health of the user or other persons may be endangered.

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