mosfet,ic cd4047,lm358 comparator mini ups system

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3.3 MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals . Although the MOSFET is a four- terminal device with source (S), gate (G), drain (D), and body (B) terminals, [1] the body (or substrate) of the MOSFET often is connected to the source terminal, making it a three-terminal device like other field-effect transistors . When two terminals are connected to each other (short-circuited) only three terminals appear in electrical diagrams. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.

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3.3 MOSFET

The metaloxidesemiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic signals. Although the MOSFET is a four-terminal device with source (S), gate (G), drain (D), and body (B) terminals,[1] the body (or substrate) of the MOSFET often is connected to the source terminal, making it a three-terminal device like other field-effect transistors. When two terminals are connected to each other (short-circuited) only three terminals appear in electrical diagrams. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.

In enhancement mode MOSFETs, a voltage drop across the oxide induces a conducting channel between the source and drain contacts via the field effect. The term "enhancement mode" refers to the increase of conductivity with increase in oxide field that adds carriers to the channel, also referred to as the inversion layer. The channel can contain electrons (called an nMOSFET or nMOS), or holes (called a pMOSFET or pMOS), opposite in type to the substrate, so nMOS is made with a p-type substrate, and pMOS with an n-type substrate (see article on semiconductor devices). In the less common depletion mode MOSFET, described further later on, the channel consists of carriers in a surface impurity layer of opposite type to the substrate, and conductivity is decreased by application of a field that depletes carriers from this surface layer.

The 'metal' in the name MOSFET is now often a misnomer because the previously metal gate material is now often a layer of polysilicon (polycrystalline silicon). Aluminium had been the gate material until the mid 1970s, when polysilicon became dominant, due to its capability to form self-aligned gates. Metallic gates are regaining popularity, since it is difficult to increase the speed of operation of transistors without metal gates.

Likewise, the 'oxide' in the name can be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with applied smaller voltages.

An insulated-gate field-effect transistor or IGFET is a related term almost synonymous with MOSFET. The term may be more inclusive, since many "MOSFETs" use a gate that is not metal, and a gate insulator that is not oxide. Another synonym is MISFET for metalinsulatorsemiconductor FET.

A variety of symbols are used for the MOSFET. The basic design is generally a line for the channel with the source and drain leaving it at right angles and then bending back at right angles into the same direction as the channel. Sometimes three line segments are used for enhancement mode and a solid line for depletion mode. Another line is drawn parallel to the channel for the gate.

The bulk connection, if shown, is shown connected to the back of the channel with an arrow indicating PMOS or NMOS. Arrows always point from P to N, so an NMOS (N-channel in P-well or P-substrate) has the arrow pointing in (from the bulk to the channel). If the bulk is connected to the source (as is generally the case with discrete devices) it is sometimes angled to meet up with the source leaving the transistor. If the bulk is not shown (as is often the case in IC design as they are generally common bulk) an inversion symbol is sometimes used to indicate PMOS, alternatively an arrow on the source may be used in the same way as for bipolar transistors (out for nMOS, in for pMOS).

Comparison of enhancement-mode and depletion-mode MOSFET symbols, along with JFET symbols (drawn with source and drain ordered such that higher voltages appear higher on the page than lower voltages):

For the symbols in which the bulk, or body, terminal is shown, it is here shown internally connected to the source. This is a typical configuration, but by no means the only important configuration. In general, the MOSFET is a four-terminal device, and in integrated circuits many of the MOSFETs share a body connection, not necessarily connected to the source terminals of all the transistors.

3.4 Mono Stable Multi Vibrator

Mono stable multi Vibrator IC CD4047:

IC CD 4047 is mainly used in Inverter circuits. It's very compact and has a very high life in inverter circuits. CD4047B consists of a gatable astable multi vibrator with logic techniques incorporated to permit positive or negative edge-triggered mono stable multi vibrator action with retriggering and external counting options. CD 4047 is the low power Mono stable / Astable Multi vibrator that require only an external capacitor and a resistor to give the output pulses.

The values of these components determine the output pulse width in the Monostable mode and output frequency in the Astable mode.

Multivibrator creates an electrical signal that changes state on a regular basis (astable) or on demand (monostable). One of the benefits of the 4047 is being able to do so as well, but with fewer external components.

Features

1. Lower power consumption: special CMOS oscillator configuration

2. Monostable (one-shot) or astable (free-running) operation

3. True and complemented buffered outputs

Monostable modeMonostable mode can be obtained by triggering the + input of the IC using a low to high pulse or by a high to low pulse at the input. The IC can be retriggered by applying simultaneous low to high pulse in both the + and inputs.

Astable modeThis can be obtained by keeping a high / low level at the Astable input. Output frequency depends on the timing components.

Pin connections of CD4047

CD 4047 is a low power CMOS IC that can operate between 3 to 15 volts DC.

Description: This is the schematic of a simple 40W , 12 volts to 220 Volts inverter.You dont believe, this is simple and cheap and working for me for last 4 years.The heart of the circuit is a CD 4047 IC which is wired as an astable multi vibrator here.Resistance and Capacitance at pin 1&2 determines the out put frequency.Here it is set to 60Hz.Due to this a two 180 degree out of phase ,120 Hz , 50% duty cycle waveforms will appear at pin 10 & 11.These waves are amplified by the complementary symmetry amplifier.

The circuit diagram is the typical application of the IC CD4047 in the Monostable mode. The timing elements are the capacitor C1 connected between the pins 1 and 3and the resistor R1 between pins 2 and 3. When a low to high pulse is applied to its pin 8 and 12, output pulse will be available from pins 10 and 11.

Output pulse width depends on the values of R1 and C1 which can be determined using the formula 2.48 R.C. R1 should be between 10k and 10M. Design of CD4047 in different modes is given in the function table of the data sheet provided.

The CD4047B is capable of operating in either the monostable or astable mode. It requires an external capacitor (between pins 1 and 3) and an external resistor (between pins 2 and 3) to determine the output pulse width in the monostable mode, and the output frequency in the astable mode.

There are three outputs, Q, and OSC out. Q is the normal output, is the inverse of Q that is if Q is high, is low at the same frequency. OSC output provides a signal that is very close to twice the frequency of Q.

4047 IC Applications

Frequency discriminators

Timing circuits

Time-delay applications

Envelope detection

Frequency multiplication

Frequency division

Diode:

Definition:

A diode is an electrical device allowing current to move through it in one direction with far greater ease than in the other. The most common kind of diode in modern circuit design is the semiconductor diode, although other diode technologies exist. Semiconductor diodes are symbolized in schematic diagrams such as Figure below. The term diode is customarily reserved for small signal devices, I 1 A. Semiconductor diode schematic symbol: Arrows indicate the direction of electron current flow.Operation:

When placed in a simple battery-lamp circuit, the diode will either allow or prevent current through the lamp, depending on the polarity of the applied voltage.

Diode operation: (a) Current flow is permitted; the diode is forward biased. (b) Current flow is prohibited; the diode is reversed biased.When the polarity of the battery is such that electrons are allowed to flow through the diode, the diode is said to be forward-biased. Conversely, when the battery is backward and the diode blocks current, the diode is said to be reverse-biased. A diode may be thought of as like a switch: closed when forward-biased and open when reverse-biased

Diode behavior is analogous to the behavior of a hydraulic device called a check valve. A check valve allows fluid flow through it in only one direction as in Figure below.

Hydraulic check valve analogy: (a) Electron current flow permitted. (b) Current flow prohibited.

Like check valves, diodes are essentially pressure- operated (voltage-operated) devices. The essential difference between forward-bias and reverse-bias is the polarity of the voltage dropped across the diode. Let's take a closer look at the simple battery-diode-lamp circuit shown earlier, this time investigating voltage drops across the various components in Figure below.

Diode circuit voltage measurements: (a) Forward biased. (b) Reverse biased.

A forward-biased diode conducts current and drops a small voltage across it, leaving most of the battery voltage dropped across the lamp. If the battery's polarity is reversed, the diode becomes reverse-biased, and drops all of the battery's voltage leaving none for the lamp.

This forward-bias voltage drop exhibited by the diode is due to the action of the depletion region formed by the P-N junction under the influence of an applied voltage. If no voltage applied is across a semiconductor diode, a thin depletion region exists around the region of the P-N junction, preventing current flow. (Figure below (a)) The depletion region is almost devoid of available charge carriers, and acts as an insulator

Diode representations: PN-junction model, schematic symbol, physical part.

The schematic symbol of the diode is shown in Figure above (b) such that the anode (pointing end) corresponds to the P-type semiconductor at (a). The cathode bar, non-pointing end, at (b) corresponds to the N-type material at (a). Also note that the cathode stripe on the physical part (c) corresponds to the cathode on the symbol.

If a reverse-biasing voltage is applied across the P-N junction, this depletion region expands, further resisting any current through it. (Figure below)

Reverse bias:

Depletion region expands with reverse bias.

Forward Bias:

Conversely, if a forward-biasing voltage is applied across the P-N junction, the depletion region collapses becoming thinner. The diode becomes less resistive to current through it. In order for a sustained current to go through the diode; though, the depletion region must be fully collapsed by the applied voltage. This takes a certain minimum voltage to accomplish, called the forward voltage as illustrated in Figure below.

Increasing forward bias from (a) to (b) decreases depletion region thickness.

For silicon diodes, the typical forward voltage is 0.7 volts, nominal. For germanium diodes, the forward voltage is only 0.3 volts. The chemical constituency of the P-N junction comprising the diode accounts for its nominal forward voltage figure, which is why silicon and germanium diodes have such different forward voltages.

Actually, forward voltage drop is more complex. An equation describes the exact current through a diode, given the voltage dropped across the junction, the temperature of the junction, and several physical constants. It is commonly known as the diode equation

The term kT/q describes the voltage produced within the P-N junction due to the action of temperature, and is called the thermal voltage, or Vt of the junction. At room temperature, this is about 26 millivolts. Knowing this, and assuming a nonideality coefficient of 1, we may simplify the diode equation and re-write it as such:

You need not be familiar with the diode equation to analyze simple diode circuits. Just understand that the voltage dropped across a current-conducting diode does change with the amount of current going through it, but that this change is fairly small over a wide range of currents. This is why many textbooks simply say the voltage drop across a conducting, semiconductor diode remains constant at 0.7 volts for silicon and 0.3 volts for germanium. However, some circuits intentionally make use of the P-N junction's inherent exponential current/voltage relationship and thus can only be understood in the context of this equation. Also, since temperature is a factor in the diode equation, a forward-biased P-N junction may also be used as a temperature-sensing device, and thus can only be understood if one has a conceptual grasp on this mathematical relationship.

A reverse-biased diode prevents current from going through it, due to the expanded depletion region. In actuality, a very small amount of current can and does go through a reverse-biased diode, called the leakage current, but it can be ignored for most purposes. The ability of a diode to withstand reverse-bias voltages is limited, as it is for any insulator. If the applied reverse-bias voltage becomes too great, the diode will experience a condition known as breakdown (Figure below), which is usually destructive. A diode's maximum reverse-bias voltage rating is known as the Peak Inverse Voltage, or PIV, and may be obtained from the manufacturer. Like forward voltage, the PIV rating of a diode varies with temperature, except that PIV increases with increased temperature and decreases as the diode becomes cooler -- exactly opposite that of forward voltage.

V-I Characteristics of a diode:

Diode curve: showing knee at 0.7 V forward bias for Si, and reverse breakdown.

APPLICATIONS:

Radio demodulation

The first use for the diode was the demodulation of amplitude modulated (AM) radio broadcasts. The history of this discovery is treated in depth in the radio article. In summary, an AM signal consists of alternating positive and negative peaks of a radio carrier wave, whose amplitude or envelope is proportional to the original audio signal. The diode (originally a crystal diode) rectifies the AM radio frequency signal, leaving only the positive peaks of the carrier wave. The audio is then extracted from the rectified carrier wave using a simple filter and fed into an audio amplifier or transducer, which generates sound waves.

Power conversionRectifiers are constructed from diodes, where they are used to convert alternating current (AC) electricity into direct current (DC). Automotive alternators are a common example, where the diode, which rectifies the AC into DC, provides better performance than the commutator or earlier, dynamo.

Logic gatesDiodes can be combined with other components to construct AND and OR logic gates. This is referred to as diode logic.LM358 Comparator:

The LM158 (Low Power Dual Operational Amplifiers) series consists of two independent, high gain; internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage.

Application areas include transducer amplifiers, dc gain blocks and all the conventional op amp circuits which now can be more easily implemented in single power supply systems.

For example, the LM158 series can be directly operated off of the standard +5V power supply voltage which is used in digital systems and will easily provide the required interface electronics without requiring the additional 15V power supplies.

Connection Diagram

Fig 8.1.1 Unique CharacteristicsIn the linear mode the input common-mode voltage range includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage. The unity gain cross frequency is temperature compensated.

The input bias current is also temperature compensated.

Features:

Internally frequency compensated for unity gain

Large dc voltage gain: 100 dB

Wide bandwidth (unity gain): 1 MHz

(temperature compensated)

Wide power supply range:

Single supply: 3V to 32V

or dual supplies: 1.5V to 16V

Very low supply current drain (500 A)essentially

independent of supply voltage

Low input offset voltage: 2 mV

Input common-mode voltage range includes ground

Differential input voltage range equal to the power supply voltage

Large output voltage swing: 0V to V+ 1.5V

Electrical Characteristics

ParameterLM358Units

Input Offset Voltage2mV

Input Bias Current45nA

Input Offset Current 5nA

Supply Current1-2mA

Output Voltage26-28mV

Large Voltage Gain25-100

CMRR85

PSRR100

Table no 8.1.5

The LM158 series are op amps which operate with only a single power supply voltage, have true-differential inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. These amplifiers operate over a wide range of power supply voltage with little change in performance characteristics. At 25C amplifier operation is possible down to a minimum supply voltage of 2.3 VDC.

Fig 8.1.5

Advantages:

Two internally compensated op amps in single packages.

Eliminates need for dual supplies

Allows directly sensing near GND and VOUT also goes to GND

Compatible with all forms of logic

Power drain suitable for battery operation

Pin-out same as LM1558/LM1458 dual operational amplifier

3.6 Potentiometer:

A potentiometer (colloquially known as a "pot") is a three-terminal resistor with a sliding contact that forms an adjustable voltage divider.[1] If only two terminals are used (one side and the wiper), it acts as a variable resistor or rheostat. Potentiometers are commonly used to control electrical devices such as volume controls on audio equipment. Potentiometers operated by a mechanism can be used as position transducers, for example, in a joystick.

Potentiometers are rarely used to directly control significant power (more than a watt). Instead they are used to adjust the level of analog signals (e.g. volume controls on audio equipment), and as control inputs for electronic circuits. For example, a light dimmer uses a potentiometer to control the switching of a TRIAC and so indirectly control the brightness of lamps.

Theory of operation:

The potentiometer can be used as a voltage divider to obtain a manually adjustable output voltage at the slider (wiper) from a fixed input voltage applied across the two ends of the pot. This is the most common use of pots.

The voltage across RL can be calculated by:

If RL is large compared to the other resistances (like the input to an operational amplifier), the output voltage can be approximated by the simpler equation:

As an example, assume

, , , and Since the load resistance is large compared to the other resistances, the output voltage VL will be approximately:

Due to the load resistance, however, it will actually be slightly lower: 6.623 V.

One of the advantages of the potential divider compared to a variable resistor in series with the source is that, while variable resistors have a maximum resistance where some current will always flow, dividers are able to vary the output voltage from maximum (VS) to ground (zero volts) as the wiper moves from one end of the pot to the other. There is, however, always a small amount of contact resistance.

In addition, the load resistance is often not known and therefore simply placing a variable resistor in series with the load could have a negligible effect or an excessive effect, depending on the load.

Potentiometer construction:

Fig: Diagram of internal construction of potentiometer

Construction of a wire-wound circular potentiometer:

The resistive element (1) of the shown device is trapezoidal, giving a non-linear relationship between resistance and turn angle. The wiper (3) rotates with the axis (4), providing the changeable resistance between the wiper contact (6) and the fixed contacts (5) and (9). The vertical position of the axis is fixed in the body (2) with the ring (7) (below) and the bolt (8) (above).

A potentiometer is constructed with a resistive element formed into an arc of a circle, and a sliding contact (wiper) traveling over that arc. The resistive element, with a terminal at one or both ends, is flat or angled, and is commonly made of graphite, although other materials may be used. The wiper is connected through another sliding contact to another terminal. On panel pots, the wiper is usually the center terminal of three. For single-turn pots, this wiper typically travels just under one revolution around the contact. "Multi turn" potentiometers also exist, where the resistor element may be helical and the wiper may move 10, 20, or more complete revolutions, though multi turn pots are usually constructed of a conventional resistive element wiped via a worm gear. Besides graphite, materials used to make the resistive element include resistance wire, carbon particles in plastic, and a ceramic/metal mixture called cermets.

One form of rotary potentiometer is called a String potentiometer. It is a multi-turn potentiometer operated by an attached reel of wire turning against a spring. It is used as a position transducer.

In a linear slider pot, a sliding control is provided instead of a dial control. The resistive element is a rectangular strip, not semi-circular as in a rotary potentiometer. Due to the large opening slot or the wiper, this type of pot has a greater potential for getting contaminated.

Potentiometers can be obtained with either linear or logarithmic relations between the slider position and the resistance (potentiometer laws or "tapers"). A letter code ("A" taper, "B" taper, etc.) may be used to identify which taper is intended, but the letter code definitions are variable over time and between manufacturers.

Manufacturers of conductive track potentiometers use conductive polymer resistor pastes that contain hard wearing resins and polymers, solvents, lubricant and carbon the constituent that provides the conductive/resistive properties. The tracks are made by screen printing the paste onto a paper based phenolic substrate and then curing it in an oven. The curing process removes all solvents and allows the conductive polymer to polymerize and cross link. This produces a durable track with stable electrical resistance throughout its working life.

Types of potentiometers:

PCB mount trimmer potentiometers, or "trimpots", intended for infrequent adjustment.

1. Linear taper potentiometerA linear taper potentiometer has a resistive element of constant cross-section, resulting in a device where the resistance between the contact (wiper) and one end terminal is proportional to the distance between them. Linear taper describes the electrical characteristic of the device, not the geometry of the resistive element. Linear taper potentiometers are used when an approximately proportional relation is desired between shaft rotation and the division ratio of the potentiometer; for example, controls used for adjusting the centering of (an analog) cathode-ray oscilloscope.

2. Logarithmic potentiometerA logarithmic taper potentiometer has a resistive element that either 'tapers' in from one end to the other, or is made from a material whose resistivity varies from one end to the other. This results in a device where output voltage is a logarithmic function of the mechanical angle of the pot.

Most (cheaper) "log" pots are actually not logarithmic, but use two regions of different resistance (but constant resistivity) to approximate a logarithmic law. A log pot can also be simulated with a linear pot and an external resistor. True log pots are significantly more expensive.

Logarithmic taper potentiometers are often used in connection with audio amplifiers.

A high power wire wound potentiometer. Any potentiometer may be connected as a rheostat.

3. Rheostat:The most common way to vary the resistance in a circuit is to use a variable resistor or a rheostat. A rheostat is a two-terminal variable resistor. Often these are designed to handle much higher voltage and current. Typically these are constructed as a resistive wire wrapped to form a toroid coil with the wiper moving over the upper surface of the toroid, sliding from one turn of the wire to the next. Sometimes a rheostat is made from resistance wire wound on a heat-resisting cylinder with the slider made from a number of metal fingers that grip lightly onto a small portion of the turns of resistance wire. The "fingers" can be moved along the coil of resistance wire by a sliding knob thus changing the "tapping" point. They are usually used as variable resistors rather than variable potential dividers.

Any three-terminal potentiometer can be used as a two-terminal variable resistor by not connecting to the third terminal. It is common practice to connect the wiper terminal to the unused end of the resistance track to reduce the amount of resistance variation caused by dirt on the track.

4. Digital potentiometerA digital potentiometer is an electronic component that mimics the functions of analog potentiometers. Through digital input signals, the resistance between two terminals can be adjusted, just as in an analog potentiometer.

5. Membrane PotentiometerA membrane potentiometer uses a conductive membrane that is deformed by a sliding element to contact a resistor voltage divider. Linearity can range from 0.5% to 5% depending on the material, design and manufacturing process. The repeat accuracy is typically between 0.1mm and 1.0mm with a theoretically infinite resolution. The service life of these types of potentiometers is typically 1 million to 20 million cycles depending on the materials used during manufacturing and the actuation method; contact and contactless (magnetic) methods are available. Many different material variations are available such as PET (foil), FR4, and Kapton. Membrane potentiometer manuafacturers offer linear, rotary, and application-specific variations. The linear versions can range from 9mm to 1000mm in length and the rotary versions range from 0 to 360(multi-turn), with each having a height of 0.5mm. Membrane potentiometers can be used for position sensing.

Applications of Potentiometer:Potentiometers are widely used as user controls, and may control a very wide variety of equipment functions. The widespread use of potentiometers in consumer electronics has declined in the 1990s, with digital controls now more common. However they remain in many applications, such as volume controls and as position sensors.

1. Audio control

Linear potentiometers ("faders")

One of the most common uses for modern low-power potentiometers is as audio control devices. Both linear pots (also known as "faders") and rotary potentiometers (commonly called knobs) are regularly used to adjust loudness, frequency attenuation and other characteristics of audio signals.

The 'log pot' is used as the volume control in audio amplifiers, where it is also called an "audio taper pot", because the amplitude response of the human ear is also logarithmic. It ensures that, on a volume control marked 0 to 10, for example, a setting of 5 sounds half as loud as a setting of 10. There is also an anti-log pot or reverse audio taper which is simply the reverse of a log pot. It is almost always used in a ganged configuration with a log pot, for instance, in an audio balance control.

Potentiometers used in combination with filter networks act as tone controls or equalizers.

2. TelevisionPotentiometers were formerly used to control picture brightness, contrast, and color response. A potentiometer was often used to adjust "vertical hold", which affected the synchronization between the receiver's internal sweep circuit (sometimes a multi vibrator) and the received picture signal.

3. TransducersPotentiometers are also very widely used as a part of displacement transducers because of the simplicity of construction and because they can give a large output signal.

4. ComputationIn analog computers, high precision potentiometers are used to scale intermediate results by desired constant factors, or to set initial conditions for a calculation. A motor-driven potentiometer may be used as a function generator, using a non-linear resistance card to supply approximations to trigonometric functions. For example, the shaft rotation might represent an angle, and the voltage division ratio can be made proportional to the cosine of the angle.A reed relay has a set of contacts inside a vacuum or inert gas filled glass tube, which protects the mercury, these relays are rarely specified for new equipment. See also mercury switch.

MOSFET:

Mosfet Metal (or poly-silicon doped heavily to act like a metal) Oxide (SiO2, Acts as an insulator.) . Semiconductor (One can selectively change the carrier type to n-type or p-type.) Field Effect (Device is controlled by an electric field as opposed to current.) Transistor (Three terminal device)

(a) When VGS (Gate-source voltage) is not supplied(b) When VGS (Gate-source voltage) is supplied

Figure 3: The Structure of an Enhancement Type MOSFET and its Operation(a) When VGS (Gate-source voltage) is not supplied(b) When VGS (Gate-source voltage) is supplied

The advantages of the lateral MOSFET are:1. Low gate signal power requirement. No gate current can flow into the gate after the small gate oxide capacitance has been charged.

2. Fast switching speeds because electrons can start to flow from drain to source as soon as the channel opens. The channel depth is proportional to the gate volage and pinches closed as soon as the gate voltage is removed, so there is no storage time effect as occurs in bipolar transistors.

The major disadvantages are1. High resistance channels. In normal operation, the source is electrically connected to the substrate. With no gate bias, the depletion region extends out from the Nadrain in a pseudo-hemispherical shape. The channel length L cannot be made shorter than the minimum depletion width required to support the rated voltage of the device.

2. Channel resistance may be decreased by creating wider channels but this is costly since it uses up valuable silicon real estate. It also slows down the switching speed of the device by increasing its gate capacitance.