mps camera projects - inafpixel output rate 12 mhz windowing x- and y- addressing random...
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MPS camera projects
MPS has more than 25 years experience in
providing FPAs for space-based solar and
planetary scientific missions, and for ground-based solar telescopes.
KLAUS HEERLEIN, JUANJO PIQUERAS, RAINER ENGE, STEPHAN WERNER, UDO SCHÜHLE
METIS CONSORTIUM MEETING TURIN, 12./13. DEC 2012
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Selected projects
Planetary: • Giotto: HMC (1986) • Mars Pathfinder: IMP (1997) • Rosetta: OSIRIS cameras (launched 2004) • Cassini/Huygens: DISR camera (2005) • Venus Express: VMC (launched 2005) • Dawn: FC 1 and 2 (launched 2007) • Phoenix: RAC (2008) Solar: • VTT, GREGOR: TIP 2 (ground-based, since 2005) • Sunrise: SuFI (2009) • RAISE • SMESE • Solar Orbiter EUI Lyman-Alpha camera • Solar Orbiter: ISPHI • Solar Orbiter METIS
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Giotto - HMC
• Comet Halley flyby, 1986
The Halley Multicolour Camera
(HMC) has recorded more than
2000 images. The 6 images
shown on the right range
between 6 min. and 1 min.
before closest approach.
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Mars Pathfinder - IMP
• NASA mission, mars landing 1997 • First successful deployment of a rover on the Martian surface. • Imager for Mars Pathfinder (IMP) a stereoscopic camera mounted on top of an expandable pole on the lander unit. • MPS has provided the CCD sensor and the readout board for IMP. Segment of a panoramic image, recorded
by the IMP.
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Cassini/Huygens - DISR camera
• NASA/ESA mission, launched 1997 to study Saturn and its moons • DISR has recorded spectra of the Titan atmosphere during the descent of the Huygens probe (Jan, 2005) • MPS was responsible for CCD detector and associated electronics Image compression board developed in collaboration with IDA
View of the open DISR instrument from above, during assembly
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Dawn - FC 1 and 2
• Mission of the NASA discovery program to study Vesta and Ceres in the asteroid belt • Has reached Vesta on July 16, 2011 and will arrive at Ceres in Feb 2015 • MPS has built the 2 identical Framing Cameras, with DLR and IDA (Braunschweig).
One of the FCs; 1k x 1k CCD with a huge range of integration times (1ms to 3.5 hours).
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Rosetta - OSIRIS
• The two OSIRIS cameras, the main scientific imaging system on the orbiter of ESA's Rosetta mission to comet 67P/Churyumov-Gerasimenko (encounter in 2014) • FPA units built at MPS
OSIRIS narrow-angle (top) and wide-angle (bottom) cameras
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Phoenix - RAC
• NASA mission to the Martian arctic region (landed on May 25, 2008)
• MPS has contributed the Robotic Arm Camera (RAC), with the Univ. of Arizona
RAC with colored LEDS and microscope optics allowing the study of Martian soil particles down to 50 µm.
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Venus Express - VMC
• ESA's first mission to Venus (launched on Nov 9, 2005) • Venus monitoring camera (VMC) monitors the dynamics of the Venus atmosphere in 4 different spectral windows between the UV and the near-IR. • VMC developed by MPS in coll. with IDA and DLR.
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VTT, GREGOR - TIP 2
• Based on 1k x 1k, HgCdTe CCD from Teledyne (former Rockwell) • Used for ground-based near-IR solar spectro-polarimetry
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Sunrise - SuFI
• Adaptation of an off-the-shelf camera (PixelVision) for the Sunrise balloon flight experiment • Hi-res observations in the 200-400nm range
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VUV / EUV cameras with MCP intensifiers
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MCP stack
fiber optic blocks
APS sensor board
FEE board
Intensified APS
STAR 1000
visible CMOS-APS sensor
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Photocathode deposition chamber at MPS
done deposition of CsI and KBr up to thickness of 1000 nm with 1 nm resolution
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• intensifier based on microchannel plates with KBr photocathode coating
• coupling with active pixel sensor (APS)
• APS electronic readout circuitry
• space qualification: vibration, acoustic, thermal, radiation hard
R&D activities: Development of I-APS detector
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The Lyman-a detector: a solar-blind intensified CMOS/APS camera
Solar Orbiter EUI HRILy-α detector
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EUI camera
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Cold element
Taper Intensifier
Harness to HVU
APS
EUI camera
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APSOLUTE sensor prototype developed by CMOSIS
intensifier prototype developed by PROXIVISION (KBr photocathode)
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METIS UVDA Camera Electronics
STAR1000 Detector
Sensor Board
FPGA Board
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METIS UVDA Camera Electronics: Block Diagram
Analog
Amp
...
...
CONTROL
FPGA
HK
MUX/ ADC
ADC #1
14b/12Msps
Pixel supplies
STAR1000
SENSOR
1k x 1k
Channel-Link Ser
DATA IF
CMD & HK SPI IF
SUPPLY IF
Sensor control & SPI IF
Se
rvic
e U
nit
OSC / POR
DAC
1
DAC
2
DAC
8
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METIS UVDA Camera Electronics: STAR-1000 sensor
Parameter Specification Notes
Detector technology CMOS Active Pixel Sensor Pixel structure 3-T active pixel Rad tolerant pixel design
Sensitive area format 1024x1024 pixels Pixel size 15x15 µm2 Pixel output rate 12 MHz Windowing x- and y- addressing
random programmable
Electronic shutter Rolling shutter, Range 1:1024 Total dose rad. tolerance > 250 krad/Si Proton radiation tolerance
≥ 2.4 x 1011 proton/cm2 @60 MeV
SEU tolerance >127.8 MeV cm3 mg-1 Spectral range 400 – 1000nm Quantum efficiency x fill factor (450 to 750nm)
≥ 30%
Full well charge 135.000 e- Linear range (within 1%) 95 ke- Supply voltage
5V digital inputs are 3.3V compatible
Lid Windowless
Proton DD: Quantum efficiency losses (~35% red) !
1k x 1k 15 x 15 µm2
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METIS UVDA Camera Electronics
14-Bit ADC, ENOB = 11.5 Bits, 69.2 dB dynamic range (DR)
STAR1000 Temporal Noise: ~1.2mV -> 9.2DN @14 Bit : ~65 dB DR
-> dynamic range of camera electronics: > 65 dB
• Use of external ADC
• Improved cleanliness of voltage supplies
• Adjustable detector voltages
• Optimized PCB layout
• Optimized ADC sampling (pipeline delay adjustable)
• Use of Space qualified parts while maintaining perf.
• Data transfer using Gray Code
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METIS UVDA Camera Electronics: Power Supply Requirements
Supply Voltage
ID
Nominal Level [V]
Tolerance
Ripple Maximum Rise Time
[ms]
Nominal Current
[mA]
Peak Current (<5ms)
Input Capacitance [µF]
VCCI 5.15 ±5% <1% ≤50 123 TBD 130
VSSI -5.15 ±5% <1% ≤50 82 TBD 15
VCCD 3.3 ±5% <1% ≤50 76 TBD 30
VCCA 2.5 ±5% <1% ≤50 83 TBD 15
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METIS UVDA Camera Electronics: Power & Mass
Unit +5.15V (VCCI)*
-5.15 V (VSSI)*
+3.3 V (VCCD)
+2.5 V (VCCA)
Total Power (W)
Power incl. 20% contingency
12 MHz Stand-by
mA 102 -68 63 69 1.26 1.51
mW 525.3 350.2 207.9 172.5
Item: Mass [g]: Remark:
Sensor Board (incl. Sensor) 48
FPGA Board (incl. FPGA) 70
Cold Finger (copper stamp) 29
Total incl. 10% contingency: 161.7 I/F harness not included !
Power (measured on LM):
Mass (measured on LM):
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METIS UVDA Camera Electronics
• radiation tolerant design (SO Specs.)
• channel link LVDS I/F
• LM – working, electrical testing in progress
• Cold Finger concept under test (PHI)
• planned LM delivery:
End of Jan. 2013
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SO-PHI FPA Camera
ISPHI Detector
Sensor Board
FPGA Board
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ISPHI FPA block diagram
28
...
...
CONTROL
FPGA
HK
MUX/ ADC
ADC #2
14b/30Msps
ADC #1
14b/30Msps
Pixel supplies
ISPHI sensor
2k x 2k
Channel-
Link Ser
DATA IF
CMD & HK SPI IF
SUPPLY IF
DAC
9
HK
MUX/ ADC
...
Sensor control & SPI IF
DP
UP
ow
er u
nit
OSC /
POR
SEL threshold
DAC
1
DAC
2
DAC
8
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SO-PHI FPA Camera
• 2kx2k ISPHI sensor 10 fps readout
• channel link high speed LVDS I/F
• radiation tolerant design (SO Specs.)
• BB model ready, tested in TV
• external power supply – clean supply mandatory for performance !
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SO-PHI FPA Camera: Power and Mass
Unit +5.15V (VCCI)*
-5.15 V (VSSI)*
+3.3 V (VCCD)
+2.5 V (VCCA)
+1.5 V (VCCB)
Total Power (W)
Power incl.
20%
contingency
15 MHz Stand-by
mA 50 -30 170 70 20 1.18 1.41
mW 257.5 154.5 561 175 30
15 MHz Acquiring
mA 50 -30 240 75 22
1.43 1.72 mW 257.5 154.5 792 187.5 33
30 MHz Stand-by
mA 50 -30 180 80 34 1.26 1.51
mW 257.5 154.5 594 200 51
30 MHz Acquiring
mA 50 -30 280 90 36
1.62 1.95 mW 257.5 154.5 924 225 54
Item: Mass [g]: Remark:
Sensor Board 64.2
FPGA Board 37.5
Cold Finger (copper stamp) 70
Total: 171.7
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SO-PHI FPA Camera: Cold Finger Concept
• Copper stamp glued to sensor back
• Interface to instrument cold finger has to provide mechanical and thermal stress relief
• design under test at MPS in TV and thermal cycling
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CMOSIS ISPHI Rev. B
APS 2k x 2k, two analog outputs, 30 MHz 10 fps high speed readout, rolling shutter no windowing capability in rows !
Parameter Value
Frame rate fps 10
Full Well ke- (60) 90
Dark noise @ RT e- 57
Dark current (293 K) e-/s 90 (TBC)
Sensitivity (617nm) % 42 – 60
Non-linearity % < 2
PRNU (local) % 1.4
Power consumption mW 500
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ISPHI Pixel architecture
33
Pixel Array
2048 x 2050
Column gain stage
(4096 columns)
4 x MUX (1024:1) +
Output stage
Pix
el co
ntr
ol
SP
I re
gis
ters
...
Pixel
Control
SPI I/F
Column
control
MUX
control
Analog
Output 1
Analog
Output 2
Output MUX (2 x 2:1)
Vdd Vdd
Transfer
Reset
Select
FD Co
lum
n b
us
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ISPHI: Quantum Efficiency
• Spectral and spatial fringing due to interferences on dielectric stack on top of the photodiode
• ARC coating is applied on Rev. B devices for improvement (blue)
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CMOSIS ISPHI Radiation Tests
• Radiation tests performed
– Total Ionizing Dose up to 154 krad(Si)
CRC, Lovaine-La-Neuve, Aug. 2011
– Displacement Damage at 10, 15, 20 MeV (4 1011
p+/cm2)
LIF, IPNAS Liège, Nov. 2011
– Single Event Effects pre-assessment with Californium-252
ESA/ESTEC, Summer 2012
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ISPHI: TID radiation tests results
• Sensor is radiation tolerant up to 75 krad(Si)
• Minor degradation on dark current, dark current non-uniformity, consumption and sensitivity
• Annealing helps recovering affected parameters
row defects above 75 krad(Si) 0 25 50 75 100 125 150 21degC 100degC200
210
220
230
240
250
260
Dose (krad) / Annealing
Cu
rre
nt co
nsu
mp
tio
n (
mA
)
Irradiation Annealing
Biased
Unbiased
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ISPHI: Proton DD radiation tests results
• Permanent damage on 2 parameters
– Dark current and Dark current non-uniformity
• Temporal damage on sensitivity, PRNU and consumption
0 1e11 2e11 3e11 4e11 21degC 100degC0
2
4
6
8
10
12
14
16
18x 10
4
Da
rk c
urr
en
t (e
-/s)
Fluence (p/cm2) / Annealing
Irradiation Annealing
10.6 MeV
15 MeV
20 MeV
200 105 5 104 e-/s
To deal with it:
- Lower temperature
- Short exposures
- Annealing helps
- Exp. lower fluence
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ISPHI: Proton DD radiation test results
• DC, Dark current non-uniformity and sensitivity after DD
400 600 800 1000 1200 1400 1600 1800 2000 22000
2
4
6
8
10
12
14
16
18x 10
4
Dark level (DN)
# p
ixels
Annealing 168 hrs @ 100deg
Annealing 160 hrs @ RT
4e11 p/cm2 @ 10.6 MeV
2e11 p/cm2 @ 10.6 MeV
5e10 p/cm2 @ 10.6 MeV
Pre-Irradiation
0 1e11 2e11 3e11 4e11 21degC 100degC200
220
240
260
280
300
320
340
360
380
400
Fla
t le
vel @
70 m
s (
DN
)
Fluence (p/cm2) / Annealing
Irradiation Annealing
10.6 MeV
15 MeV
20 MeV
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SEE radiation test results
• Cf-252 allows pre-assessment of sensor SEE tolerance
– Low penetration depth
• No latch-up occurred
• Seven single event upsets were detected
– Sensor registers are not duplicated
– Automatic recovery system of FPA electronics tested
• Heavy Ions test planned for Q1/2013
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ISPHI Dark Current vs. Temperature
Temperature -28 -8 0 25 40
Dark current (e-/s): Post Irradiation
30 272 847 17980 97470
Pre Irradiation 254
Dark current vs. Temp. ISPHI 10029 a´fter irradiation (10.6 MeV, 4x1011 p/cm2, 213.2 krad [Si]2 TiD)
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ISPHI Readout Noise and FPN vs. Temp
Readout Noise and FPN, ISPHI 10029 after irradiation (10.6 MeV, 4x1011 p/cm2, 213.2 krad [Si]2 TiD)
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Digitization noise
• Applying fixed input voltages to the ADCs
• (c): Prototype after removal of interference pattern
• (d): BB camera
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Overall dark noise
• Including ISPHI and camera electronics
Dark image: - Shortest exposure - Subwindow Total read noise versus output and
operating frequency
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Dark noise and offset FPN
Output 1
(DN)
Output 2
(DN)
Output 3
(DN)
Output 4
(DN)
1 Offset FPN 19.1963 17.7866 16.858 16.6184
2 Mean dark noise 7.0072 6.9701 6.1966 6.2409
3 Error bar of 2 2.432 1.8668 1.5192 1.5002
• Differential dark image
FPN is removed
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Back-up slides
45
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ISPHIv1: performance
46
• APS - 2k x 2k on 10 µm2 pixel pitch
• 4T pixel design with rolling shutter Requirement Result
Frame rate fps > 10 11**
Full Well ke- > 100 60 – 90
Dark noise e- < 100 57
Dark current (293 K) e-/s < 200 90
Sensitivity (617nm) % > 50 42 – 60
Non-linearity % < 2 < 2
PRNU (local) % < 5 1.4
Power consumption mW < 500 480
** Ghosting artifacts
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ISPHI radiation test results
47
• Dark current after TID
0 25 50 75 100 125 150 21degC 100degC0
100
200
300
400
500
600
700
Da
rk c
urr
en
t (e
-/s)
Dose (krad (Si)) / Annealing
Irradiation Annealing
Biased
Unbiased
480 500 520 540 560 580 600 620 6400
5
10
15x 10
4
Dark level (DN)#
pix
els
154 krad(Si)
117 krad(Si)
55.1 krad(Si)
36.5 krad(Si)
18 krad(Si)
200 600 280 e-/s
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ISPHI radiation test results
48
• DC, Dark current non-uniformity and sensitivity after DD
400 600 800 1000 1200 1400 1600 1800 2000 22000
2
4
6
8
10
12
14
16
18x 10
4
Dark level (DN)
# p
ixels
Annealing 168 hrs @ 100deg
Annealing 160 hrs @ RT
4e11 p/cm2 @ 10.6 MeV
2e11 p/cm2 @ 10.6 MeV
5e10 p/cm2 @ 10.6 MeV
Pre-Irradiation
0 1e11 2e11 3e11 4e11 21degC 100degC200
220
240
260
280
300
320
340
360
380
400
Fla
t le
vel @
70 m
s (
DN
)
Fluence (p/cm2) / Annealing
Irradiation Annealing
10.6 MeV
15 MeV
20 MeV
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ISPHI radiation test results
49
• Cf-252 SEE
2500
2600
2700
2800
2900
3000
3100
3200
3300
Mean v
alu
e (
DN
)
Run 1 Run 2 Run 3Run 4 Run 5 Run 6 Run 7
Run 8
** **
****
**
****
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Back-up: STAR1000
50
Proton DD: Quantum efficiency losses (~35% red)
1k x 1k 15 x 15 µm2
Frame rate 11 fps
Full Well 95 ke-
Readout noise 47 e-
Dark current 3135 e-/s (+25 °C)
Shutter Rolling
Sensitivity 20 % (frontside)
Power cons 100 mW
Radiation hard 230 krad (TID)
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SO radiation specification
51
Requirement Al shield Value
TID* (Si) 1 mm 150 krad
2 mm 73 krad
Proton fluence - 3.8 1011 p/cm2 at 10 MeV
8.8 1010 p/cm2 at 30 MeV
2.6 1010 p/cm2 at 60 MeV
NIEL equivalent 10 MeV proton fluence
1 mm 3.6 1011 p/cm2
2 mm 1.8 1011 p/cm2
SEU LET threshold - 25 MeV cm2 / mg
SEL LET threshold - 60 MeV cm2 / mg
* New values for PHI: TID(Si) < 30 krad with 1 mm Al