July 2011 Doc ID 14933 Rev 4 1/13

13

STP180N10F3N-channel 100 V, 4.5 mΩ, 120 A STripFET™III Power MOSFET

TO-220

Features

Ultra low on-resistance

100% avalanche tested

Applications High current switching applications

DescriptionThis device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.

Figure 1. Internal schematic diagram

Order codes VDSS RDS(on) max.

ID

STP180N10F3 100 V 5.1 mΩ 120 A

TO-220

12

3

TAB

Table 1. Device summary

Order codes Marking Package Packaging

STP180N10F3 180N10F3 TO-220 Tube

www.st.com

Contents STP180N10F3

2/13 Doc ID 14933 Rev 4

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

STP180N10F3 Electrical ratings

Doc ID 14933 Rev 4 3/13

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS=0) 100 V

VGS Gate-source voltage ± 20 V

ID (1)

1. Current limited by package.

Drain current (continuous) at TC = 25°C 120 A

ID (1) Drain current (continuous) at TC=100°C 110 A

IDM (2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 480 A

PTOT Total dissipation at TC = 25°C 315 W

Derating factor 2.1 W/°C

dv/dt Peak diode recovery voltage slope 20 V/ns

EAS (3)

3. Starting Tj = 25 °C, ID = 80 A, VDD = 50 V.

Single pulse avalanche energy 350 mJ

Tj

Tstg

Operating junction temperature

storage temperature- 55 to 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.48 °C/W

Rthj-aThermal resistance junction-ambient max

62.5 °C/W

TlMaximum lead temperature for soldering purpose

300 °C

Electrical characteristics STP180N10F3

4/13 Doc ID 14933 Rev 4

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdown voltage (VGS= 0)

ID = 250 µA 100 V

IDSSZero gate voltage drain current (VGS = 0)

VDS= 100 V

VDS= 100 V, TC= 125°C

10

100

µA

µA

IGSSGate body leakage current

(VDS = 0)VGS = ±20 V ±200 nA

VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V

RDS(on)Static drain-source on resistance

VGS= 10 V, ID= 60 A 4.5 5.1 mΩ

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0-

6665

78649

-

pF

pFpF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 50 V, ID = 120 A,

VGS = 10 V

(see Figure 14)

-

114.6

38.8

31.9

-

nC

nC

nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

trtd(off)

tf

Turn-on delay time Rise time

Turn-off delay time

Fall time

VDD = 50 V, ID = 60 A

RG = 4.7 Ω VGS = 10 V

(see Figure 13, Figure 18)

-

25.697.1

99.9

6.9

-

nsns

ns

ns

STP180N10F3 Electrical characteristics

Doc ID 14933 Rev 4 5/13

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD

ISDM(1)

1. Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-120480

AA

VSD(2)

2. Pulse duration = 300µs, duty cycle 1.5%

Forward on voltage ISD=120 A, VGS=0 - 1.5 V

trrQrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=120 A,

di/dt = 100 A/µs, VDD=80 V, Tj=150°C

(see Figure 15)

-

83.4

295.7

7.1

ns

nC

A

Electrical characteristics STP180N10F3

6/13 Doc ID 14933 Rev 4

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Static drain-source on resistance Figure 7. Source-drain diode forward characteristics

ID

100

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max R

DS(on)

100µs

1ms

10msTj=175°C

Tc=25°CSingle pulse

AM08615v1

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/τ

tp

τ

Single pulse

δ=0.5

280tok

ID

200

150

50

00 2 VDS(V)4

(A)

1 3 5

250

300

5V

6V

7V

VGS=10V

6 7 8

100

350

AM08616v1ID

200

150

50

00 4 VGS(V)8

(A)

2 6 9

250

300

1 3 5 7

VDS=2V

100

350

AM08617v1

RDS(on)

4.4

4.2

4.00 40 ID(A)

(Ω)

20 60

4.6

4.8

VGS=10V

10080 120

AM08619v1 VSD

0 40 ISD(A)

(V)

20 10060 800.4

0.5

0.6

0.7

0.8

0.9

1.0 TJ=-55°C

TJ=175°C

TJ=25°C

120

AM08624v1

STP180N10F3 Electrical characteristics

Doc ID 14933 Rev 4 7/13

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on resistance vs temperature

Figure 12. Normalized BVDSS vs temperature

VGS

6

4

2

00 20 Qg(nC)

(V)

80

8

40 60

10

VDD=50VID=120A

100

12

120 140

AM08620v1 C

15000

10000

5000

00 40 VDS(V)

(pF)

20

20000

60

Ciss

Coss

Crss

80 100

AM08621v1

VGS(th)

0.9

0.7

0.5

0.3-75 TJ(°C)

(norm)

-25

1.1

7525 125 175

1.3

ID=250µA

AM08622v1 RDS(on)

1.1

0.9

0.7

0.5-75 TJ(°C)

(norm)

-25 7525 125 175

1.3

1.5

1.7

1.9

2.1 ID=60AVGS=10V

AM08623v1

BVDSS

-75 TJ(°C)

(norm)

-25 7525 1250.90

0.95

1.00

1.05

1.10

175

ID=1mA

AM08618v1

Test circuits STP180N10F3

8/13 Doc ID 14933 Rev 4

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

µF3.3µF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200µF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100µH

µF3.3 1000

µF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200µF

3.3µF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

STP180N10F3 Package mechanical data

Doc ID 14933 Rev 4 9/13

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Package mechanical data STP180N10F3

10/13 Doc ID 14933 Rev 4

Table 8. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

STP180N10F3 Package mechanical data

Doc ID 14933 Rev 4 11/13

Figure 19. TO-220 type A drawing

0015988_typeA_Rev_S

Revision history STP180N10F3

12/13 Doc ID 14933 Rev 4

5 Revision history

Table 9. Document revision history

Date Revision Changes

01-Aug-2008 1 First version

03-Jun-2010 2– Removed package, mechanical data: D²PAK– Added new package mechanical data: H²PAK

10-Mar-2011 3 Document status promoted from preliminary data to datasheet.

11-Jul-2011 4 Removed part number in H²PAK.

STP180N10F3

Doc ID 14933 Rev 4 13/13

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