n typep type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron...

18
DOPING

Upload: aubrie-carter

Post on 17-Jan-2018

220 views

Category:

Documents


0 download

DESCRIPTION

N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

TRANSCRIPT

Page 1: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

DOPING

Page 2: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

“DONATION”

Page 3: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

DOPANTS

N type P type(donor impurities) (acceptor

impurities)-antimony -aluminum-arsenic -boron-bismuth -gallium-phosporus -indium

Page 4: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

MAJORITY and MINORITY CHARGE CARRIERS

Charge carriers are those that inhibits current conduction in a semiconductor which are either electrons (-) or holes (+).

Page 5: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

The dominating charge carriers , whether holes or electrons, are the majority carriers.

The less abundant ones are the minority carriers.

Page 6: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

ELECTRON FLOW

In a N type semiconductor, most of the current flows as “electrons” passing from atom to atom. This defines an electron flow.

Page 7: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

HOLE FLOW

In a P type semiconductor, most of the current flows as an “electron absence”. The absences, called “holes”, move in a direction opposite to that of the electrons. This defines the hole flow.

Page 8: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

BEHAVIOR of a P-N Junction

Page 9: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium
Page 10: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

A resistor must be included in a circuit to prevent destruction of the diode by the excessive current.

Page 11: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

FORWARD BREAKOVER VOLTAGE

This is essential for conduction to occur, wherein, it varies from about 0.3V to 1V. Its application can be useful in amplitude limiters, waveform clippers and treshold detectors.

Page 12: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

How does junction works?Forward bias

Reverse bias

Page 13: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

JUNCTION CAPACITANCE

Some P-N junctions can alternate between conduction (in forward bias) and nonconduction (in reverse bias) millions or billions of times per second. Other junctions are slower.

Page 14: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

The capacitance is the main limitting factor at the P-N junction during conditions of reverse bias.

Page 15: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

The amount of capacitance depends on several factors:

Operating voltage

Type of semiconductor material

Cross-sectional area of the P-N junction

Page 16: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

Junction capacitance can be varied by changing the reverse-bias voltage, because the voltage affects the width of the depletion region.

Page 17: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

AVALANCE EFFECT

“If the reverse bias goes past teh critical value of depletion, the voltage overcomes the ability of the junction to prevent the flow of current, and the junction conducts as if it were forward biased.”

Page 18: N typeP type (donor impurities)(acceptor impurities) -antimony-aluminum -arsenic-boron -bismuth-gallium -phosporus-indium

Some components are designed to take advantage of the avalanche effect. In other cases, avalanche effect limits the performance of a circuit.