nanofabrication lecture 7 lg - aalborg universitethomes.nano.aau.dk/lg/nanofabrication_lecture...
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Lecture 7
Etching
Figures of merit• Etch rate: sufficiently high but
not too high, usually 100-1000 Å/min
• Etch rate uniformity: percentage variation of etch rate
• Etch selectivity: etch rate of various materials
• Etch anisotropy (lateral vs. vertical)
1 L
V
RAR
= −
• Material damage produced by etching
• Safety to health and environment
Wet etching
Advantages• highly selective• doesn’t introduce damageDrawbacks• lack of anisotropy• poor process control• excessive particle contamination
etching species reaction products
reaction at the surface
• transport limitation;• bubble formation• resist scumming
Wet etching of SiO2.
• Wet etching in dilute solutions of HF: 6:1; 10:1 and 20:1 (HF:H2O)Typical etch rate for thermal oxide (6:1): 1200 Å/min
2 2 6 26 2SiO HF H SiF H O+ → + +
To avoid pH and concentration change, buffered HF (BHF) is used
4 3NH F NH HF+
Etching rates: BHF 20:1: thermal oxide 300 Å/min
Si3N4 10 Å/min
Wet etching of SiO2.
• Etched groove (with and without steering)
Other wet etching recipes
• Silicon Nitride (if oxidized at high T, oxide should be removed first)– H3PO4 at 140 – 200 °C– 3:10 mixture of 49%HF and 70%HNO3 at 70 °C.
• Aluminium etch (alloys might be difficult!)– 20% v/v acetic acid, 77% H3PO4, 3% HNO3.
Isotropic etching of Silicon• Silicon etching (oxidation + HF)
3 2 6 2 2 2Si HNO H SiF HNO H H O+ + + +
acetic acid is commonly used as a diluent
HF limited
oxidant limited
Wet etching of Si
Etch rate depends on the crystallographic orientation. Highlypacked planes are the slowest to etch
OHOHSiOOHOHSi
HOHeOH
eOHSiOHSi
2222
22
22
22
2)(4)(
444
4)(2
+→+
+→+
+→+
−−+
−−
−+−
Types of etchants:• Alkali hydroxide etchants: KOH, NaOH, CsOH, RbOH• Ammonium hydroxide etchants: Nh4OH, tertramethylammonium hydroxide (TMAH) (CH3)4NOH • Other etchants: hydrazine/water, amine gallate etc.
Anisotropic etching of Silicon
• Crystallographic orientations (Miller indices)
Anisotropic etching of Silicon• Crystalline structure of Silicon
• Diamond like structure
• Marking orientationon Silicon wafers
Anisotropic etching of Silicon• Wet etching of (100) Silicon
Anisotropic etching of Silicon
Anisotropic etching of Silicon• Etching rate for many alkaline solutions is slow in (111)
direction, so anisotropic etch with high aspect ratio can be achieved
• Mixture: (KOH:Isopropyl Alcohol: Water) (23.4 : 13.5 : 63)gives etching rate ratio (100)/(111) 100/1.
• Special purpose wet etch– doping selective etch:
HF/HNO3/CH3COOH 1:3:8 – 15 times higher etch rate for heavily doped silicon (>1019 cm-3) ethylene-diamine-pyrocatehol-water etches lightly doped silicon without attacking heavily doped
– Defect selective etchrate ratio (100)/(111) 100/1.
Anisotropic etching of Silicon• Chracteristics of different etchants
Wet etching of other orientation of Silicon
Chemical Mechanical Polishing (CMP)
containing 12-30% of SiO2 particles, KOH and NH4OH, pH~10 to keep silica negatively charged
34 /(2 )S pR P K Eφ=
Resulting smoothness:
• used to achieve global planarization: globally flat surface, free of scratches and contamination
Plasma etching
Advantages:• easy start and stop• less sensitive to small changes in temperature• large variety of chemistry, anisotropic etch with tunable
anisotropy and selectivity can be achieved
Plasma etching• DC plasma
(glow discharge)
Plasma etching• RF plasma
High-Pressure Plasma Etching• Historically, the first plasma systems• high pressure, typically 500mTorr• mean free path shorter than the chamber size, low
ion energy• etch process depends primarily on the chemistry
Example: CF4 plasma
17 /C F Si Si Si F kJ mol∨ + ∨ = − +105 kJ/mol 42 kJ/mol 130 kJ/mol
net positive energy (from collision with high-energy electrons) is required for the reaction
High-Pressure Plasma Etching• Mechanisms for Si etching in
CF4 plasma:
• Rate can be estimated by flux of reactive species (F2, CFx, x=1,2,3)
2
2nn RTJ
Mπ=
High-Pressure Plasma EtchingSiO2 etching:
5 /F F Si O Si F Kcal mol∨ + ∨ = − + −
– SiO2 etching is more aggressive; selectivity Si/SiO2 is 50:1 at room T, 100:1 at -30 ºC
– high concentration fluorine is preferable for high Si/SiO2 selectivity
– preferred species CF4, C2F6, SF6
– small addition of oxygen improve both etch rates, large addition removes selectivity
High-Pressure Plasma Etching
• Anisotropic etchfluorocarbon fil passivating the wall
Formation of hydrocarbon film can be encouraged by addition of hydrogen (H2, CHF3 etc.)
High-Pressure Plasma Etching
• Anisotropic etch
High-Pressure Plasma Etching
• Loading effect: etch rate in may plasma etches decreases with increase in the area of exposed film
0
1RRkA
=+
etching rate for an empty chamber
area of the exposed film
• End-point detection:– laser interferometry– mass spectrometry analysis of the gas composition
Ion Milling• Accelerated ions of noble gases are used• purely mechanical etching• high directionality• applicable to wide range of materials
Kaufman source
• independent control over ion and ion energy
• beam divergences 5° - 7°• large ion currents over large
area
3/ 2
max 2t
g
Vqj Km I
≈
Ion Milling• typical problem during ion milling
Ion Milling
• Chemically assisted Ion-beam milling (CAIBE): reactive species are added to the beam (e.g. O2)
• Ion-assisted chemical etch
Reactive Ion Etching (RIE)• in RIE the wafer rests on the powered electrode that increases
bombardment energy. • the pressure is lower to improve plasma contact with the wafer
Typically50mTorr5kW/cm2.
Reactive Ion Etching (RIE)• Si etching in Cl plasma
Reactive Ion Etching (RIE)
• Sidewall passivation in HCl/O2/BCl3 plasma
Reactive Ion Etching (RIE)
• Problem during RIE– residual damage in the
substrate after etch due to ion bombardment.
– chemical contamination (due to polymerization; metallic impurities due to sputtering of chamber, electrodes etc, )
O2 plasma cleaning followed by wet acid cleaning and H2 plasma treatment
carbon can penetrate as deep as 300Å (forming Si-C bonds), hydrogen as deep as several microns. Solution: Cleaning + Annealing
Reactive Ion Etching (RIE)
• Problem during RIE– residual damage in the
substrate after etch due to ion bombardment.
– chemical contamination (due to polymerization; metallic impurities due to sputtering of chamber, electrodes etc, )
O2 plasma cleaning followed by wet acid cleaning and H2 plasma treatment
carbon can penetrate as deep as 300Å (forming Si-C bonds), hydrogen as deep as several microns. Solution: Cleaning + Annealing
Summary dry etching
Lift Off
• Process sequence
Lift Off• resist profiles after different treatment
Problem:
• You have to machine an orifice 10 x 10 um through a Si wafer(520um thick). What should be the size of the mask on theback side? How long will it take? You are going to use KOH solution with etching rates 5nm/min in {111} planes and 2um/min for {100} planes.
• 11.2• 11.3