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Nanometrology in Brazil
Carlos Achete
-Introduction: Inmetro
-Materials m
etrology for
Outline
-Materials m
etrology for
today to
morrow
the future
Short historic
•Early 1900:NIST, PTB, NPL
•1973: Inmetro
Brazilian products reached quantity level
Brazilian products reached quantity level
for gaining the international market. Efforts
have to be made for guaranteeing quality.
•Materials Division –started 2006/2007
Campus, Xerém -RJ
Campus, Xerém -RJ
Mecanics and
Materials
Administration
Optics
Therm
ics
Chemstry
www.inmetro.gov.br
Materials
Electricity and
Telecomunications
Acustics and
Vibrations
DIMAT
Materials Metrology Division
Instrumentation
and
Theory for Nano-metrology
Instrumentation for electronics and computation
Computation cluster
Surface phenomena
Surface phenomena
Tribometer
Micro-tribometer
Friction sim
ulator
Ultra-high vacuum STM
AFM
XPS + AES + ISS + LEED
Microscopy
Microscopy
SEM + EDS + EBSD
Dual beam –
FIB+MEV
TEM with Cs correction
TEM
Organic Devices
Produção e caracterização de dispositivos orgânicos, metais e TCOs
Spectroscopy and
Spectroscopy and
Diffraction
Diffraction
X-ray diffraction
Micro-Raman spectroscopy
IR Espectrosc. (30-15800cm
-1)
UV-VIS Espectrosc. (175-3300nm)
Magnetism
Magnetism
Histeresim
eter
Magnetometer
Thermal analysis
Thermal analysis
Acoustosize
r
HFM
DSC-PCA
DSC
P-DSC
r
Microonda
MS
DMA
SDTA
NanoFlash
GHP
Autosorb -
BET
Metrology for today
Guarantee for quality and
consumer protection
consumer protection
-Emergencies
-National products
-International products
Accurate chemical analysis
X-ray fluorescence
Reference
material
material
1PPM de Pb
(“electronbackscatteringdiffraction”)
1. Acesita -(TSL)
2.UFSCAR, DEMA -(TSL)
3.USP Politécnica, São Paulo -(TSL)
4. IME -( JEOL / TSL)
Metallic texture by EBSD
Interlaboratorial
4. IME -( JEOL / TSL)
5. UFC -(Oxford)
6. UFSCAR, Quimica -(Oxford)
7. Usiminas–(Oxford / HKL)
8. IPT -( JEOL/ HKL)
9. LNLS ( JEOL/ HKL )
10. UFOP -( JEOL/HKL)
11. UFRGS -(JEOL/HKL)
Residual stress by X-ray analysis
()
ψτ
+ψ
σ+
ε=
εϕ
ϕψϕ
2si
nS
21si
nS
21hkl
2
2hkl
2
hkl
00
hkl
Tensor elástico
Polimorfism in drugs
Ex: Membendazol –form
s A, B e C
Ascaridiase in Brazil
(Ministério da Saúde)
Other exemples:
Mefenamic acid (ponstan)
Carbamazepine (anti-convulsionante)
Tibolone (fem. hormone)
Gestodene (anti-conceptional)
Metrology for tomorrow
Guarantee for quality, consumer
protection and exportation
Soja
Girassol
Canola
Canola
Soja
BIOFUEL S
oja
Girassol
Canola
Canola
Soja
Transesterification
Development of Certified
Reference Material
0
500
Fluxo de Calor (mW/g)Therm
al estability DSC
And purity
An
tes
Inte
raction w
ith c
arb
on s
teel
Com Diesel
0,10
0,11
0,12
0,13
0,14
BA
Friction coefficient
Lubricity
Mamona 24h, 250oC
Mamona novo
-100
0-500
Fluxo de Calor (mW/g)
Temperatura (°C)
-100
0-5000
500
Fluxo de Calor (mW/g)
Temperatura (°C)
Ap
ós
soja
Com Biodiesel
02468101214161820
0,07
0,08
0,09
0,10
0,11
0,12
0,13
0,14
B
A
Friction coefficient
Test time (x103s)
BD 200 N
02468101214161820
0,07
0,08
0,09
D 200 N
Test time (x103s)
Friction coefficient
Metrology for the future
Guarantee for quality, consumer
Guarantee for quality, consumer
protectionand exportation of
future goods –Nano
Mercado m
undial de Nanotecnologia
HardDisksDrives
(< 100 nm)
Market Size
HardDisksDrives
Electronics
International market
From Nanotechnology W
orld, 2005
SPMs
Carbon
Cond. Elétricos/ R
evestimento
Nanoproducts/ D
rugs
Large
GMR
OLED
OLED
1960
1980
2000
2020
Market Size
Small
Magnetic Fluids
GMR
OLED
OLED
NANOMETROLOGY
•Nanoparticles
•Nanocatalysis
•Nanocatalysis
•Organic semiconductors
•Carbon
•Lubricants
•Covering
•Pollution cleaning
Nanofluids:
nano-particles suspention in liquid m
edium
Stable
physically
•Pollution cleaning
•Drug delivery
•Functional tissue-cell interaction
•Pigments and colloring
•Heat Transfer
Stable
chemically
Small size particles
100 nm
ZnO, γ-Al 2O
3, CuO (Petrobrás)
56789
Razão de condutividade
termicas k/k0
K
Increase in Heat conductivity
Reported values:
4 %
vol A
l2O3
→ 8 %
k4 %
vol C
uO
→ 12 %
k10-4% vol T
hiol-Au→ 10 %
k0,5 %
vol Fe
→ 18 %
k
012345
0.5
11.5
22.5
% e
m v
olu
me d
e n
anopart
icula
s
Razão de condutividade
termicas k/k0
K HC
0,5 %
vol Fe
→ 18 %
k4 %
vol C
u→ 20 %
k0,1 %
vol SWCN
→150 %
k
Nano-particles
size
Scherrer Equation (1918)
Θ⋅
=co
sL
KB
λB–FWHM
L–crystallite “size”
Approximations:
1.
Cubic with same dim
ensions
2.
K arbitrary
“apparent” size
Experimental
Calculado
Modeling shape of
Nano-rutile (TiO
2)
200
300
400
500
600
700
800
900
1000
Intensity (arb. units)
Dedicated software based on several ( h k l ) and β βββ= (area/hight)
Nano-m
aterials
calibratedbyTEM
68
10
12
14
16
18
20
22
100
200
Intensity (arb. units)
2Θ (0) 50 nm
NanoRutile-TiO2size
from Raman spectroscopy
Frequency and width depends
on particle size
Uncertainty priciple
xq
xpx
∆∆
⇒∆⋅
∆1
~~h
r
0200
400
600
800
1000
5.8 nm
9.3 nm
9.8 nm
22.7 nm
Intensity (a.u.)
Raman shift (cm-1)
Bulk
[]
;)
2/(
)(
)(
)(
22
32
∫∫∫Γ
+−
∝BZ
q
qd
qC
Iω
ωω
r
NANOMETROLOGY
•Nanoparticles
•Nanocatalysis
•Nanocatalysis
•Organic semiconductors
•Carbon (see 11AM presentation)
Interface between surface science and catalisys
Building the thin film
oxide…
MoOx/Cu3Au (100)
Cleanning
O+(2x10-5mbar/ 650K,
5min
Metal deposition
O2at 773K
(165L)
(165L)
LEED e XPS
4 Å
Name Position Area % Area
Mo 5+ 3d5/2 230.99 1583.10 42.135
Mo 5+ 3d3/2 234.14 1345.60 35.770
Mo 6+ 3d3/2 325.81 381.90 10.145
Two film
s can be m
ade
70eV
LEED: sim
etry: retangular +
hexagonal
XPS, Mo(V) identified
240
235
230
225
220
Mo 6+ 3d3/2 325.81 381.90 10.145
Mo 6+ 3d5/2 232.66 449.30 11.950
CPS (u.a.)
Energia de Ligação (eV) Mo 5+ (3d5/2)
Mo 5+ (3d3/2)
Mo 6+ (3d 3/2)
Mo 6+ (3d 5/2)
(Mixture M
o0, Mo4+,Mo5+,M
o6+)
(predominance M
o5+)
83eV
15
20
25
Limpa
Coberta (V)
Vanadium in Silicon
STM –V = + 1.4 V
# eventos STM (80%)
Baixa-cobert.: 0.012 MC = 7.9x1014at/cm2
AB
CD
05
10
15
Estimativa experimental de massa:
~60% (eventos) do V depositado.
Energetics (eV):
“Bias” polarity effect:
HR-TEM
Inteface V
xO
y–Cu3Au
Nanofabrication and
lithography
Dual beam
–FIB+MEV
NANOMETROLOGY
•Nanoparticles
•Nanocatalysis
•Nanocatalysis
•Organic semiconductors
•Carbon (see 11AM presentation)
Market analysis
Al
N
OA
lO N
ON
ET
L
Alq
3
EL
Lum
ines
cent
Mat
eria
l
- +
OLED structure IT
O
Gla
ss
N
C HN
N
HT
L
MT
CD
LIG
HT
LIG
HT
Analyzing photo-degradation
N
O
H H
H
H
H
HH
N
Al
O
O
N
O
H
H
H
H
H
H
H
HH
H
H
N
O
H H
H
H
H
HH
Analyzing photo-degradation
N
Al
O
O
N
O
H
H
H
H
H
H
H
HH
H
H
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Absorbância (Intens. Normal.)
Alq3 - Irradiado
Alq3 - Não Irradiado
823/804/786
748
1113
1383/1330
1498/1466
1603/1576
1697
1279/1230
649
544
416
2000
1800
1600
1400
1200
1000
800
600
400
Número de Onda (cm-1)
Absorbância (Intens. Normal.)
Theoretical spectra for Alq
3
degradation
Alq
3
Equip
Equip