new materials as an enabler for advanced chip manufacturing
TRANSCRIPT
© 2013 ASM
ASM International
Analyst and Investor Technology Seminar
Semicon West July 10 2013
New Materials as an enabler for Advanced Chip Manufacturing
Drive Innovation, Deliver Excellence
Front-End Operations
© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers
• Major Trends in Thin Film Deposition• The ALD Technology Platform as a Response
• FinFET related challenges and Metal ALD
• PEALD as a Low Temperature Enabler
• ASM Front-end Products and selected applications
• Summary and Conclusions
2
Front-End Operations
© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers
• Major Trends in Thin Film Deposition• The ALD Technology Platform as a Response
• FinFET related challenges and Metal ALD
• PEALD as a Low Temperature Enabler
• ASM Front-end Products and selected applications
• Summary and Conclusions
3
Front-End Operations
© 2013 ASM 3
Scaling will increasingly be enabled by New Materials and 3D Technologies
1995 2000 2005 2010 20151990 2025
Scaling enabled by Litho
Scaling enabled by Materials
Scaling enabled by 3D
2020
Low-k
Strained Si
High-k
FinFET
3D Memory
IEDM 2002
IEDM 2003
IEDM 2007
3D SIC
Chipworks 2012
Front-End Operations
© 2013 ASM
Increasing Introduction Rate of New Materials
1960 1970 1980 1990 2000 2010
SOI
Porous SiOC
Cu
SiOF
SiGe
NiSi
Si(O)N
W
Ti/TiN
(B)PSG
Si,epi
SiO,N
Al-Cu
SOP
SiOC
AlO
Hf(Si)O
Ta/TaN
TaO
ZrO
LaO
SiC
Cu
SiOF
CoSi
Si(O)N
W
Ti/TiN
(B)PSG
Si,epi
SiO,N
Al-Cu
SOP
SiOC
Ta/TaN
TaO
TiSi
Si(O)N
WSi, PtSi
Ti/TiN
(B)PSG
Si,epi
SiO,N
Al-Cu
Si(O)N
WSi, MoSi
TiW
(B)PSG
Si,epi
SiO,N
Al-Cu
(B)PSG
Si,epi
SiO, SiN
Al-Cu
Si
SiO, SiN
Al-Cu
Starting Mat’l
FEOL
BEOL
5
Front-End Operations
© 2013 ASM
New Materials and Processes: Moore’s Law Enablers
Higher Capacitance, Lower Leakage
High-k and
Metal Gates
DRAM, RF,
decoupling
capacitors
Less Cross Talk, Faster Interconnect
(Porous)
Low-k Materials
Improved
Metals
Higher Mobility, Lower Resistance
Strain and new Channel Materials
New metal contacts
Smaller Feature Sizes
Sub-Rayleigh limit
patterning using
SDDP
6
Front-End Operations
© 2013 ASM
ALD enables new materials and 3D
• New materials and 3D applications require more precise and controlled thin film deposition
• Compared to conventional deposition techniques ALD offers superior:• Uniformity
• Conformality
• Interface control
• ASMI is a leading player in the ALD market• Developing ALD technology since 1999
• Strong IP position
• Number 1 in high-k gate and strong position in SDDP
• The ALD market offers strong growth opportunities: • High-k metal gate, FinFET
• Spacer defined double patterning
• Other emerging applications7
Front-End Operations
© 2013 ASM 8
What is Atomic Layer Deposition (ALD)?
Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge
Step 3: Reaction to Oxide/Nitride
with O2, H2O, NH3 co-reactant
Step 4: Purge
and repeat…
Front-End Operations
© 2013 ASM
Key strengths of ALD relative to conventional deposition
9
Step Coverage
SEM’s Courtesy of Philips Research Labs
TiN
Uniformity
Max
Min
<1% 3σ
<0.7% M-m
29 nm SiO2
Interface Control
Atomically
engineered
interfaces to
optimize leakage
current, reliability
and work-functions
Composition Control
Excellent
composition
control for
ternary alloys
such as GST
and STO0 25 50 75 100
0
25
50
75
100 0
25
50
75
100
Te
Ge
Sb
V. Pore (2010)
Front-End Operations
© 2013 ASM
ASM’s unique Materials Development Capabilities
Product Development, Product Engineering, Product Marketing, Cooperative R&D Projects
Process Development
Process Integration 15 – 7 nm
Cooperative R&D Projects
ASM Belgium
ASM Europe ASM America ASM Japan ASMGK (Korea)
N+2,3
N+1,2
Pre-cursor Exploration
Process Feasibility
Basic Materials R&D
Cooperative R&D Projects
ASM Microchemistry (Fi)
N+≥3
10
Front-End Operations
© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers
• Major Trends in Thin Film Deposition• The ALD Technology Platform as a Response
• FinFET related challenges and Metal ALD
• PEALD as a Low Temperature Enabler
• ASM Front-end Products and selected applications
• Summary and Conclusions
11
Front-End Operations
© 2013 ASM
Major Trends in Thin Film Depositionand ASM’s Vision for ALD
Thin Film Needs:
• New materials
• Thinner films
• Interface engineering
• 3D conformality
• Lower thermal budget
ALD is a whole new technology platform
for enabling new materials!
ALD ���� PEALD ���� …..
Integration Capabilities
• Subtractive and Damascene patterning
• Etching
• Gap fills
• Clustering
12
Front-End Operations
© 2013 ASM
FinFET Challenges:ALD enables Further Scaling in 3D
• Materials properties and channel length must be uniform over fin height
• Conformal coverage required
• ���� ALD technology has become critical for HK and MG layers
IMEC, 2011
13
Front-End Operations
© 2013 ASM 14
ASM Front-end ProductsALD
• Pulsar® XP
• ALD for high-k
• Cross-flow reactor
• Solid source delivery system
• EmerALD® XP
• ALD for metal gates
• Showerhead reactor Pulsar® XP
EmerALD® XP
Front-End Operations
© 2013 ASM 15
What is Plasma Enhanced Atomic Layer Deposition (PEALD)?
Step 1: (Metal) Precursor Chemi-sorption Step 2: Purge
Step 3: Reaction to Oxide/Nitride
or metal with O,N,H Radicals
and repeat…
Plasma + Faster+ Lower temperatures+ More chemistries+ Denser films- More complex- Plasma may preclude
some applications
Front-End Operations
© 2013 ASM
PEALD as an enabler of Lower Temperature Budget
Low temperature deposition of SiO2
and Si3N4 opens up wide potential application space
16
LT SiO2 SiO2 SiN SiCN
Deposition
Temperature50 oC 260 oC 360 oC 360 oC
Application FEOL SDDP Gate spacerSDDP (LT)
Gate spacer
Low WER
Gate spacer
Front-End Operations
© 2013 ASM 17
New Materials enabling LithographySpacer Defined Double Patterning
Litho-formed Resist Pattern
Conformal SiO2
Anisotropic Etch
Pitch
Pitch/2
44nm
22nm
Depo of SiO2 at 50C
Resist
ASM, ALD conference 2008; SPIE
conference 2009
Left
Center
Right
Uniform
CD
’s:
Spacer
Thic
kness N
U <
1%
, 3
σ
Front-End Operations
© 2013 ASM
ASM Front-end ProductsPEALD and PECVD
RC1
RC2
RC4
RC3
RC5
RC6
RC7
RC8
18
• XP8
• High productivity single wafer tool for both PEALD and PECVD applications
• Accommodates up to 8 chambers for PEALD or PECVD
• PEALD and PECVD can be integrated on the same platform
Front-End Operations
© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers
• Major Trends in Thin Film Deposition• The ALD Technology Platform as a Response
• FinFET related challenges and Metal ALD
• PEALD as a Low Temperature Enabler
• ASM Front-end Products and selected applications
• Summary and Conclusions
19
Front-End Operations
© 2013 ASM 20
ASM Products – Front-end
Strong IP protected portfolio
ALD and PEALD
• ALD solution (Hafnium oxide)
• PEALD Low temp dielectrics
Market Requirements: 32nm→22nm →14nm and beyond
Process Application
Diffusion Furnace
• Unique “dual reactor dual boat” design
Epitaxy
• Epitaxial films for analog devices as well as for nMOS and pMOS
PECVD
• Extreme low-k films
• ALD key for High-k Metal Gate technology
• 3D FinFET requires more
conformal layers, strength of ALD
• SDDP-application of PE-ALD
• Smallest footprint per reactor
• Low Cost of Ownership
• Thick Epi layers for power devices
• Strained Epi films for CMOS
• Advanced intermetal dielectric film
ASM Relative Positioning
� #1 in the served ALD market
� Qualified by nearly all Logic and Foundry manufacturers
� Strengthening inroads with PEALD
� Leading IC manufacturers are customers
� ASM one of only two top vendors
� ASM one of only two top vendors in PE-CVD low-k
Front-End Operations
© 2013 ASM 21
ASM Products – Front-end
Strong IP protected portfolio
ALD and PEALD
• ALD solution (Hafnium oxide)
• PEALD Low temp dielectrics
Market Requirements: 32nm→22nm →14nm and beyond
Process Application
Diffusion Furnace
• Unique “dual reactor dual boat” design
Epitaxy
• Epitaxial films for analog devices as well as for nMOS and pMOS
PECVD
• Extreme low-k films
• ALD key for High-k Metal Gate technology
• 3D FinFET requires more
conformal layers, strength of ALD
• SDDP-application of PE-ALD
• Smallest footprint per reactor
• Low Cost of Ownership
• Thick Epi layers for power devices
• Strained Epi films for CMOS
• Advanced intermetal dielectric film
ASM Relative Positioning
� #1 in the served ALD market
� Qualified by nearly all Logic and Foundry manufacturers
� Strengthening inroads with PEALD
� Leading IC manufacturers are customers
� ASM one of only two top vendors
� ASM one of only two top vendors in PE-CVD low-k
Front-End Operations
© 2013 ASM
ASM Front-end Products
Advanced Epitaxy
• Enabling transistor performance
• Strained epitaxial films for planar & FinFET devices
• Excellent interface control for high quality film growth
• Integrated Pre-Clean module
• High productivity
• Platform with 4 Epi chambers
• Differentiated & patented high film growth processes
Intrepid™ XP
22
Front-End Operations
© 2013 ASM
Epi layers for Power DevicesMulti-Layer Epi Technology
N+ Drain
1st layer Epi
PR mask
B implant B implant
N+ Drain
1st layer Epi
2nd layer Epi
N+ Drain
1st layer Epi
2nd layer Epi
3rd layer Epi
B implant B implant
PR mask
4th layer Epi
• Thick multi-layer epi needed for power management devices
• Number of epi layers depends upon the breakdown voltage required (Typical from 600 – 800V)
• Implemented in production by various companies
Multiple epi steps
23
ASM Product: Epsilon® 3200Epi for advanced power devices
Front-End Operations
© 2013 ASM 24
ASM Products – Front-end
Strong IP protected portfolio
ALD and PEALD
• ALD solution (Hafnium oxide)
• PEALD Low temp dielectrics
Market Requirements: 32nm→22nm →14nm and beyond
Process Application
Diffusion Furnace
• Unique “dual reactor dual boat” design
Epitaxy
• Epitaxial films for analog devices as well as for nMOS and pMOS
PECVD
• Extreme low-k films
• ALD key for High-k Metal Gate technology
• 3D FinFET requires more
conformal layers, strength of ALD
• SDDP-application of PE-ALD
• Smallest footprint per reactor
• Low Cost of Ownership
• Thick Epi layers for power devices
• Strained Epi films for CMOS
• Advanced intermetal dielectric film
ASM Relative Positioning
� #1 in the served ALD market
� Qualified by nearly all Logic and Foundry manufacturers
� Strengthening inroads with PEALD
� Leading IC manufacturers are customers
� ASM one of only two top vendors
� ASM one of only two top vendors in PE-CVD low-k
Front-End Operations
© 2013 ASM
Extendibility of ASM’s Low-k Solution
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
90~45nm 32nm 22nm 15nm 11nm 8nm
ILD
k-v
alu
e Aurora® low-k (k=2.6)
Aurora® ELK (2.3-2.5)
UV-assisted process k<2.0?
Aurora® ELK (2.0)
Po
re S
ea
l / R
esto
rati
on
Aurora® low-k (k=2.8~3.1)
25
Front-End Operations
© 2013 ASM 26
ASM Products – Front-end
Strong IP protected portfolio
ALD and PEALD
• ALD solution (Hafnium oxide)
• PEALD Low temp dielectrics
Market Requirements: 32nm→22nm →14nm and beyond
Process Application
Diffusion Furnace
• Unique “dual reactor dual boat” design
Epitaxy
• Epitaxial films for analog devices as well as for nMOS and pMOS
PECVD
• Extreme low-k films
• ALD key for High-k Metal Gate technology
• 3D FinFET requires more
conformal layers, strength of ALD
• SDDP-application of PE-ALD
• Smallest footprint per reactor
• Low Cost of Ownership
• Thick Epi layers for power devices
• Strained Epi films for CMOS
• Advanced intermetal dielectric film
ASM Relative Positioning
� #1 in the served ALD market
� Qualified by nearly all Logic and Foundry manufacturers
� Strengthening inroads with PEALD
� Leading IC manufacturers are customers
� ASM one of only two top vendors
� ASM one of only two top vendors in PE-CVD low-k
Front-End Operations
© 2013 ASM 27
A412 PLUS: Productivity and Innovation
24 hrs
Wafe
rs O
ut
in o
ne
Da
y
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube A
Tube B
Tube A
Tube B
150
300
900
600
1200
1500
1800
2100
24 hrs
Wafe
rs O
ut
in o
ne
Da
y
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube A
Tube B
Tube A
Tube B
150
300
900
600
1200
1500
1800
2100
04/11 0:00 04/12 0:00
LogisticsWHR Load/Unload
Processing (2.5 hr)
Tube A
Tube B
Tube A
Tube B
150
300
900
600
1200
1500
1800
2100
Innovation• New ALD and CVD processes• Example 1: AlN
• Example 2: very thin closed silicon, 3.5nm
AB
Productivity• One A412 PLUS = up to 80
kwpm (2.5 hr process, 95% available, 150 wafer boat)
• About 40% lower capex per m2 as competitors
• Dual boat/dual reactor system
Real time production data:
WiW NU:~0.25% 1σ
SiO2
Si
3.0
3.4
3.4
3.2 3.3
3.6
3.3
3.5
SiO2
Front-End Operations
© 2013 ASM 28
Wafer Fab Equipment Forecast
Share of 28nm, 22nm and 14nm of total Equipment spending increasing in 2013-2014
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
2011 2012 2013 2014 2015 2016
WF
E $
B
Wafer Fab Equipment Forecast by technology node≤14 nm
22 nm
32 nm
45 nm
65 nm
≥90nm
-4%
-18%
+15%+15%
-6%
+17%
Gartner June, 2013
Key customer ALD penetrations in 28, 22 and 14nm: market segments with high expected growth
Front-End Operations
© 2013 ASM
Outline
• New Materials: Moore’s Law Enablers
• Major Trends in Thin Film Deposition• The ALD Technology Platform as a Response
• FinFET related challenges and Metal ALD
• PEALD as a Low Temperature Enabler
• ASM Front-end Products and selected applications
• Summary and Conclusions
29
Front-End Operations
© 2013 ASM 3030
Summary and Conclusions
• Scaling is increasingly enabled by new materials and 3D technologies
• ALD enables new materials and 3D
• The ALD market offers strong growth opportunities
• Adoption of more ALD and PEALD applications in HVM continues• ASMI #1 position in ALD for High-k gate
• 3D FinFET’s drive adoption of ALD, not only for the dielectric, but also for metals
• Strengthening inroads with PEALD on XP8, high productivity system for PEALD and PECVD applications
• Intrepid® XP, system with 4 Epi reactors, targeting strained Epi layers for CMOS
• ASM’s Vertical Furnace is providing low CoO and footprint per reactor
© 2013 ASM
Drive Innovation, Deliver Excellence