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Review of Near-field Radiation for
Thermophotovoltaics
Majid al-Dosari
12/14/2011
Thermophotovoltaics (TPVs) are solid state devices that convert ther-
mally generated radiation into electrical current. Any TPV device consists
of a thermal emitter and a photovoltaic cell separated by a gap. TPVs were
conceived in the 1950s but suffered from very low efficiency. The advent
of low band-gap photovoltaics in the 1990’s renewed interest in TPVs in
hope of increasing their efficiency. In the 2000s, near-field radiation effects
have been explored to further increase efficiency and power output. Much
of the research on near-field effects has been focused on surface phonon po-
laritons since they can be excited thermally and can transfer energy in a
narrow spectral band. The radiation transfer between (bulk) surfaces, thin
films, photonic crystals, and metamaterials have been analyzed. The re-
search seems to be headed towards analyzing arbitrary geometries and more
realistic modeling.
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Introduction
Thermophotovoltaics (TPVs) are solid state devices that convert thermally
generated radiation to heat. All TPV devices have a heated emitter and a
photovoltaic cell to recieve the radiation and convert the radiation to elec-
trical current. Conceptualized in the 1950’s, thermophotovoltaic develop-
ment was slow and suffered from very low efficiency until the 1990’s with the
emergence of low-bandgap photovoltaics [21]. This allowed the characteristic
wavelength of blackbody radiation to be within that of the band gap energy
corresponding to temperatures from about 1000 K to 1500 K (.5 to .7 eV)
thereby increasing efficiency and power output. In 2001, DiMatteo [5] was
first to exploit near-field effects in a TPV device although near-field effects
had been known prior to 2001. This was a break from research efforts that
focus on tuning far-field emission through complicated optics, use of exotic
materials, and patterning of surfaces.
Near-field effects are due to the wave nature of electromagnetic radiation
that manifest at distances around the wavelength of the radiation. Maxwell’s
equations predict an exponentially decaying electric field at surfaces. So, the
proximity of the emitter and receiver allow for the coupling of evanescent
waves thereby enhancing the heat transfer over that predicted by Planck’s
law. The evanescent waves appear from total internal reflection or surface
polaritons. Surface plasmon plasmon polaritons (SPPs) are the hybrid mode
of collective oscillations of free electrons and an electromagnetic field ap-
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pearing mainly in metals. Surface phonon polaritons (SPhPs) are the hybrid
mode of collective oscillations of lattice vibrations and an electromagnetic
field appearing mainly in polar materials. Research efforts focus on SPhPs
since they can be excited thermally in the infrared, while SPPs appear gen-
erally in the ultraviolet. Also, interference effects can arise from reflections
within the gap which are sensitive to the separation distance.
So, understanding near-field effects is crucial to optimizing near-field ther-
mophotovoltaic devices. Efforts to understand near-field radiation are thefocus of the following literature review.
Literature Review
Near-field radiation study is a nascent field with most progress made only in
the previous decade. The following literature review attempts to highlight the
progress of understanding near-field radiation as it pertains to thermophoto-
voltaics. Except where mentioned, all the studies here are theoretical and are
exhibited roughly chronologically. Parallel plates are the general geometric
configuration although a TPV device may be cylindrical.
Rytov [24] first described thermally-generated radiation in terms of fluc-
tuational electrodynamics. A random current is added to Ampere’s law to
represent thermally agitated charges. Green’s function is found to solve
Maxwell’s equations particular to the geometry of the problem. The Green’s
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function may be interpreted as a transfer function that relates the contribu-
tion of as each current source contributes to the electric field. The average
strength of emission from electromagnetic sources is related to its tempera-
ture through the fluctuation-dissipation theorem. Except for Ref. [23], all
theoretical work shown relies on the work of Rytov.
Mulet [18] used fluctuational electrodynamics to study the radiative heat
transfer between two surfaces that support surface modes: SiC and glass.
The radiative heat transfer is enhanced by several orders of magnitude whenthe surfaces support resonant surface waves. Mulet is often cited for show-
ing that the transfer is nearly monochromatic which is advantageous for
thermophotovoltaics. It is also shown that the density of photonic states
increases as inverse distance cubed from the surface. The procedure laid out
is used subsequent studies.
Similarly, Narayanaswamy [19] analyzed heat transfer between media that
support surface plasmon polaritons: BN, SiC, and BC. They also show that
even when one side was a photovoltaic, the transfer was still enhanced (al-
though less).
Fu [12] analyzed the effect of doping silicon on near-field radiation. A
fairly comprehensive model for the complex permittivity of silicon was used
taking into consideration effects of temperature and dopant concentration
on electron-lattice scattering and photon absorption, and the properties of
holes (in addition to electrons). The increased flux was observed at lower
frequencies where black body exchange becomes insignificant.
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Laroche [17] provided a quantitative model of a TPV device in the near-
field. The power and efficiency of a (broadband) tungsten and a fictitious
quasimonochromatic source matched to a GaSb cell were compared. The
power enhancement was by a factor of 25 and 35 respectively. The efficiency
was 27% and 35% respectively representing an enhancement as well due to the
concentration of frequencies around the bandgap. However, the enhancement
is not strictly monotonic with decreasing distance. Furthermore, although
respectable, the near-field efficiency for the quasimonochromatic source waslower than expected because the radiative transfer was broadened by the
presence of the GaSb cell in the near-field.
Biehs [4] showed that in thin metal films, the radiative intensity is maxi-
mized for a certain film thicknesses due to Fabry-Perot-like reflections inside
the film.
Francoeur [9] studied the emission from a 10 nm thick SiC layer on a
dielectric transmitting to bulk SiC. The radiative flux was 3.3 times larger
than that of a bulk emitter due to a splitting of the resonant frequency
into symmetric and anti-symmetric modes thereby increasing the channels
available for heat transfer.
Hu [15] provides one of few experimental verifications of near-field radia-
tion enhancement. The heat exchanged between two glass plates separated
by a micron-sized gap showed reasonable agreement with theory. Before that,
Hanamura [14] reported near-field electrical enhancement in a TPV device
with gaps in the micron range using a GaSb photocell.
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Park [22] calculated the performance of a TPV system rigorously by con-
sidering the thermal radiation absorption in different regions of a In.18Ga.82Sb
photovoltaic. Stronger absorption of thermal radiation near the surface is
calculated as the gap decreases decreasing device efficiency to around 20%
(in contrast to assuming 100% quantum efficiency as in Ref. [17]). The
component of the wavevector parallel to the plates at which maximum heat
transfer occurs changes with separation distance which changes the penetra-
tion depth. This suggests an optimal separation distance between the emitterand the PV cell. Furthermore, a back-reflector is suggested to recycle unused
photons back to the emitter.
Ben-Abdallah [3] calculated the heat transfer between isolated thin films
supporting SPhPs.
Fu [13] showed that enhancement by adding thin films of SiC or SiO2
on a substrate does not apply when the receiver is a metal. The near-field
enhancement between metals relies on TE-polarization while SPhP relies on
TM-polarization.
Francoeur [11] provides a comprehensive and general procedure for cal-
culating near-field thermal radiation in layered media. It is shown that a
SiC film emitter of about 1 m m gives the same spectral distribution as a
bulk emitter. In a following paper [10], more explanation for the radiative
transfer in thin films is provided by analyzing the local density of photonic
states (LDoS) within the gap between the thin films. Multiple SPhP cou-
pling was observed which explains enhanced radiation transfer. However, it
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was observed that the LDoS at the surface of the emitter is dominated by
SPhPs of large wavevectors parallel to the surface the are not affected by
the receiving medium. There is also a note on the limit of the macroscopic
electrodynamics given the nanometric scale of the films and gaps.
Basu [1] improved on the dielectric function used by Fu [12] by using
ionization and mobility models better suited for heavily doped silicon. The
lateral shift in the direction of energy transfer was calculated in order find a
plate size that is effectively infinite laterally. Further elaboration on energytransfer direction is given in Ref. [2].
Francoeur [8] ogranizes near-field heat transfer between thin films into
dimensionless (film thickeness divided by gap width) regimes. Each regime
has a different inverse gap width dependence.
Furthermore, Francoeur [25] modeled a tungsten and In.18Ga.82Sb TPV
system rigorously (in a way similar to Park [22]) but evaluated the effect
of higher temperature on the photocell. It was found that the the power
output and the conversion efficiency of the system are respectively 5.83 ×
105 Wm − 2 and 24.8% at 300 K, whereas these values drop to 8.09 × 104
Wm − 2 and 3.2% at 500 K. A ~105 Wm − 2 convective cooling coefficient
is required at the photocell in order to keep it at room temperature. The
heating comes from the broadband nature emission of tungsten. The point
of the paper is to comment on the feasibility of implementing such cooling
on a device.
Very recent research efforts are exploring near-field effects in metama-
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terials. Joulain [16] was first to consider near-field heat transfer between
metamaterials. It was found that the magnetic response of the materials
give additional channels for energy transfer. Zheng [26] added that the en-
hancement may not hold for if one side is different. Francoeur [7] also found
enhanced transfer in metameterials consisting of a pottasium bromide host
with SiC spherical inclusions. It was found that SP from TM-polarizations
are not affected by the size of the inclusions while SP from TE polarization
require at least a one micron radius to be excited. Nefedov [20] suggested thatby adding a metamaterial in the gap, enhanced transfer can occur in relatively
larger gaps. The metamaterial converts evanescent waves into propagating
waves.
The paper by Rodriguez [23] models near field heat transfer directly be-
tween photonic crystals by introducing a random current in finite-difference
time-domain simulation. They find a trade-off between spectral selectivity
and near-field enhancement. Also, they found that the heat transfer can be
enhanced in certain symmetric configurations.
An attempt has been made to exhibit the literature exhaustively but only
20 to 30 papers have been produced in the last decade that concern near-field
radiation for TPV’s. Many of the papers are authored by G. Chen, M. Pinar
Menguc, Z. Zhang, and their students. Perhaps the field is best introduced
in Francour’s PhD thesis [6]. There is a progression of sophistication of
analyzed systems starting with bulk materials, then on to thin-films, and
more recently photonic crystals and metamaterials.
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Research Direction
The analysis techniques used in all papers (except for Ref. [23]) are math-
ematically involved while only applicable to simple planar geometries. Fur-
thermore, this technique requires the specification of temperature of the re-
ceiver to determine the heat flux. Ideally the calculation should only involve
input heat flux or the temperature of the emitter as an input to the problem.
So it is expected that there will be modeling techniques that address these
problems. Also, the engineering problem of optimizing a TPV device will be
addressed.
References
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With an Improved Dielectric Function Model for Doped Silicon. Journal
of Heat Transfer , 132(2):023302, 2010.
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streamlines in near-field thermal radiation. Journal of Quantitative Spec-
troscopy and Radiative Transfer , 112(7):1149–1155, May 2011.
[3] Philippe Ben-Abdallah, Karl Joulain, Jeremie Drevillon, and Gilberto
Domingues. Near-field heat transfer mediated by surface wave hybridiza-
tion between two films. Journal of Applied Physics , 106(4):044306, 2009.
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[4] S.-a. Biehs, D. Reddig, and M. Holthaus. Thermal radiation and near-
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