nmb2227a - nexperia...nmb2227a 40 v, 600 ma npn/pnp general-purpose transistors 15 september 2016...

NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors15 September 2016 Product data sheet

1. General descriptionNPN/PNP general-purpose transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)plastic package.

2. Features and benefits• General-purpose transistor• High current• Reduces component count on Printed-Circuit Board (PCB)• Reduces pick and place costs• AEC-Q101 qualified

3. Applications• General-purpose switching and amplification• Complementary driver• Half-bridge and full-bridge driver

4. Quick reference data

Table 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

TR1 (NPN)

VCEO collector-emittervoltage

open base - - 40 V

hFE DC current gain VCE = 10 V; IC = 150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

100 - 300

TR2 (PNP)

VCEO collector-emittervoltage

open base - - -60 V

hFE DC current gain VCE = -10 V; IC = -150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

100 - 300

Per transistor; for the PNP transistor with negative polarity

IC collector current - - 600 mA

© Nexperia B.V. 2017. All rights reserved

Nexperia NMB2227A40 V, 600 mA NPN/PNP general-purpose transistors

NMB2227A All information provided in this document is subject to legal disclaimers.

Product data sheet 15 September 2016 2 / 17

5. Pinning information

Table 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 B1 base TR1

2 E2 emitter TR2

3 B2 base TR2

4 C2 collector TR2

5 E1 emitter TR1

6 C1 collector TR1

1 32

456

TSOP6 (SOT457)

aaa-022995

C1 E1 C2

B1 E2

TR1

TR2

B2

6. Ordering information

Table 3. Ordering informationPackageType number

Name Description Version

NMB2227A TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457

7. Marking

Table 4. Marking codesType number Marking code

NMB2227A 3B





8. Limiting values

Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

TR1 (NPN)

VCBO collector-base voltage open emitter - 75 V

VCEO collector-emitter voltage open base - 40 V

TR2 (PNP)

VCBO collector-base voltage open emitter - -60 V

VCEO collector-emitter voltage open base - -60 V

Per transistor; for the PNP transistor with negative polarity

VEBO emitter-base voltage open collector - 6 V

IC collector current - 600 mA

ICM peak collector current - 800 mA

IBM peak base current

single pulse; tp ≤ 1 ms

- 200 mA

Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW

Per device

Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW

Tj junction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Tamb (°C)-75 17512525 75-25

aaa-023571

200

100

300

400

Ptot(mW)

0

FR4 PCB; standard footprint

Fig. 1. Power derating curve





9. Thermal characteristics

Table 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistancefrom junction toambient

in free air [1] - - 625 K/W

Per device

Rth(j-a) thermal resistancefrom junction toambient

in free air [1] - - 417 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.





10. Characteristics

Table 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

TR1 (NPN)

VCB = 60 V; IE = 0 A; Tamb = 25 °C - - 10 nAICBO collector-base cut-offcurrent VCB = 60 V; IE = 0 A; Tj = 125 °C - - 10 µA

IEBO emitter-base cut-offcurrent

VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 10 nA

VCE = 10 V; IC = 1 mA; Tamb = 25 °C 50 - -

VCE = 10 V; IC = 10 mA; Tamb = 25 °C 75 - -

VCE = 10 V; IC = 150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

100 - 300

hFE DC current gain

VCE = 10 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

40 - -

IC = 150 mA; IB = 15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - 300 mVVCEsat collector-emittersaturation voltage


- - 1 V


0.6 - 1.2 VVBEsat base-emitter saturationvoltage


- - 2 V

td delay time - - 15 ns

tr rise time - - 20 ns

ton turn-on time - - 35 ns

ts storage time - - 200 ns

tf fall time - - 60 ns

toff turn-off time

IC = 150 mA; IBon = 15 mA;IBoff = -15 mA; VCC = 10 V;Tamb = 25 °C

- - 250 ns

CC collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

- - 8 pF

CE emitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A;f = 1 MHz; Tamb = 25 °C

- - 25 pF

fT transition frequency VCE = 20 V; IC = 20 mA; f = 100 MHz;Tamb = 25 °C

300 - - MHz

TR2 (PNP)

VCB = -50 V; IE = 0 A; Tamb = 25 °C - - -10 nAICBO collector-base cut-offcurrent VCB = -50 V; IE = 0 A; Tj = 125 °C - - -10 µA

IEBO emitter-base cut-offcurrent

VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -50 nA

VCE = -10 V; IC = -0.1 mA; Tamb = 25 °C 75 - -

VCE = -10 V; IC = -1 mA; Tamb = 25 °C 100 - -

hFE DC current gain

VCE = -10 V; IC = -10 mA; Tamb = 25 °C 100 - -





Symbol Parameter Conditions Min Typ Max Unit

VCE = -10 V; IC = -150 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

100 - 300

VCE = -10 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

50 - -

IC = -150 mA; IB = -15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -400 mVVCEsat collector-emittersaturation voltage


- - -1.6 V


- - -1.3 VVBEsat base-emitter saturationvoltage


- - -2.6 V

td delay time - - 12 ns

tr rise time - - 30 ns

ton turn-on time - - 40 ns

ts storage time - - 300 ns

tf fall time - - 65 ns

toff turn-off time

IC = -150 mA; IBon = -15 mA;IBoff = 15 mA; VCC = -10 V;Tamb = 25 °C

- - 365 ns

CC collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

- - 8 pF

CE emitter capacitance VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz;Tamb = 25 °C

- - 30 pF

fT transition frequency VCE = -20 V; IC = -50 mA; f = 100 MHz;Tamb = 25 °C

200 - - MHz

aaa-017357

300

600

900

hFE

0

IC (mA)10-1 1031021 10

(1)

(2)

(3)

VCE = 10 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 2. NPN transistor: DC current gain as a functionof collector current; typical values

VCE (V)0 1084 62

aaa-017359

0.3

0.6

0.9

IC(A)

0.0

IB = 13 mA11.7 mA10.4 mA

9.1 mA7.8 mA 6.5 mA

5.2 mA3.9 mA

2.6 mA

1.3 mA

Tamb = 25 °C

Fig. 3. NPN transistor: Collector current as a functionof collector-emitter voltage; typical values





aaa-017361

0.4

0.6

0.2

0.8

1.0

VBE(V)

0.0

IC (mA)10-1 1031021 10

(1)

(2)

(3)

VCE = 10 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

Fig. 4. NPN transistor: Base-emitter voltage as afunction of collector current; typical values

aaa-017362

0.6

0.8

0.4

1.0

1.2

VBEsat(V)

0.2

IC (mA)10-1 1031021 10

(1)

(2)

(3)

IC/IB = 10(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

Fig. 5. NPN transistor: Base-emitter saturation voltageas a function of collector current; typicalvalues

aaa-017363

IC (mA)10-1 1031021 10

10-1

1

VCEsat(V)

10-2

(1)

(2)

(3)

IC/IB = 20(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 6. NPN transistor: Collector-emitter saturationvoltage as a function of collector current;typical values

aaa-017364

IC (mA)10-1 1031021 10

10-1

1

VCEsat(V)

10-2

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 7. NPN transistor: Collector-emitter saturationvoltage as a function of collector current;typical values





aaa-014480

200

100

300

400

hFE

0

IC (mA)-10-1 -103-102-1 -10

(1)

(2)

(3)

VCE = -10 V(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 8. PNP transistor: DC current gain as a functionof collector current; typical values

VCE (V)0 -10-8-4 -6-2

aaa-014481

-0.4

-0.6

-0.2

-0.8

-1

IC(A)

0

-2

-4

-6-8

-10-12

-14-16

IB = -20 mA

-18

Tamb = 25 °C

Fig. 9. PNP transistor: Collector current as a functionof collector-emitter voltage; typical values

aaa-014482

-0.4

-0.8

-1.2

VBE(V)

0

IC (mA)-10-1 -103-102-1 -10

(1)

(2)

(3)

VCE = -10 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

Fig. 10. PNP transistor: Base-emitter voltage as afunction of collector current; typical values

aaa-014483

-0.6

-0.8

-0.4

-1.0

-1.2

VBEsat(V)

-0.2

IC (mA)-10-1 -103-102-1 -10

(3)

(2)

(1)

IC/IB = 10(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

Fig. 11. PNP transistor: Base-emitter saturation voltageas a function of collector current; typicalvalues





aaa-014484

IC (mA)-10-1 -103-102-1 -10

-10-1

-1

VCEsat(V)

-10-2

(1)(2)

(3)

IC/IB = 20(1) Tamb = 150 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 12. PNP transistor: Collector-emitter saturationvoltage as a function of collector current;typical values

aaa-014699

IC (mA)-10-1 -103-102-1 -10

-10-1

-1

VCEsat(V)

-10-2

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 13. PNP transistor: Collector-emitter saturationvoltage as a function of collector current;typical values





11. Test information

006aaa003

IBon (100 %)

IB

input pulse(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

IC

tdton

90 %

10 %

tr

output pulse(idealized waveform)

tf

t

tstoff

Fig. 14. TR1 (NPN): Transistor switching time definition

RC

R2

R1

DUT

mlb826

Vo

RB(probe)450 Ω

(probe)450 Ω

oscilloscope oscilloscope

VBB

VI

VCC

Fig. 15. TR1 (NPN): Test circuit for switching times





006aaa266

- IBon (100 %)

- IB

input pulse(idealized waveform)

- IBoff

90 %

10 %

- IC (100 %)

- IC

tdton

90 %

10 %

tr

output pulse(idealized waveform)

t f

t

ts

toff

Fig. 16. TR2 (PNP): Transistor switching time definition

RC

R2

R1

DUT

mgd624

Vo

RB(probe)450 Ω

(probe)450 Ω

oscilloscope oscilloscope

VBB

VI

VCC

Fig. 17. TR2 (PNP): Test circuit for switching times

Quality informationThis product has been qualified in accordance with the Automotive Electronics Council (AEC)standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.





12. Package outline

3.02.5

1.71.3

3.12.7

pin 1 index

1.9

0.260.10

0.400.25

0.95

1.10.9

0.60.2

1 32

456

14-10-03Dimensions in mm

Fig. 18. Package outline TSOP6 (SOT457)

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot457_fr

3.45

1.95

2.8253.3

0.45(6×)

0.55(6×)

0.7(6×)

0.8(6×)

2.4

0.95

0.95

Dimensions in mm

Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)





sot457_fw

5.3

5.05

1.45(6×)

0.45(2×)

1.5(4×)

2.85

1.475

1.475solder lands

solder resist

occupied area

preferred transportdirection during soldering

Dimensions in mm

Fig. 20. Wave soldering footprint for TSOP6 (SOT457)





14. Revision history

Table 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

NMB2227A v.1 20160915 Product data sheet - -





15. Legal information

Data sheet status

Documentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

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Preliminary[short] datasheet

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Product[short] datasheet

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[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

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16. Contents

1. General description......................................................12. Features and benefits.................................................. 13. Applications.................................................................. 14. Quick reference data....................................................15. Pinning information......................................................26. Ordering information....................................................27. Marking..........................................................................28. Limiting values............................................................. 39. Thermal characteristics............................................... 410. Characteristics............................................................511. Test information....................................................... 1012. Package outline........................................................ 1213. Soldering................................................................... 1214. Revision history........................................................1415. Legal information..................................................... 15

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 15 September 2016