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Nonlinear Optics in Silicon Photonics
Klaus Petermann
E-Mail: [email protected]
Fachgebiet Hochfrequenztechnik
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik 1
AcknowledgementTU Berlin
J. Bruns, G. Dziallas, A.Gajda, M. Jazayerifar, C. Stamatiadis, K. Voigt, B. Wohlfeil
IHPR. Barth, J. Drews, M. Fraschke, O. Fursenko, T. Grabolla, B. Heinemann, D. Knoll, M. Kroh, A. Krüger,
M. Lisker, S. Lischke, S. Marschmeyer, D. Micusik, P. Ostrovskyy, D. Petousi, H.H. Richter, K. Schulz, H.Tian,B.Tillack, A. Trusch, G.Winzer, Y. Yamamoto, L.Zimmermann
HHIR. Elschner, T.Richter, C.Schubert
DTUF. Da Ros, D. Vukovic, C. K. Dalgaard, M. Galili, C. Peucheret (now University Rennes)
University of VirginiaA.Beling, Q. Zhou
TU WienB. Goll, H. Zimmermann
University of SouthamptonD. J. Thomson, F. Y. Gardes, Y. Hu, G. T. Reed
PHOTLINEH. Porte
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Photonic BiCMOS
2
Introduction to Photonic BiCMOS
Nonlinear Optical Signal Processingusing Photonic BiCMOS Devices
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
BiCMOS
IC PIC
EPIC
3
Integrated Circuit Photonic Integrated Circuit
Electronic Photonic Integrated Circuit
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
PhotonicsIC technologySilicon Photonics
Joint Lab Silicon Photonics
Head: Dr. Lars Zimmermann
Prof. Klaus PetermannProf. Bernd Tillack
4
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
IHP location
5
Frankfurt (Oder)
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Pilot line 0.25µm/0.13µm SiGe BiCMOS
SG25H1 npn‐HBTs up to ft/fmax=180/220GHz
SG25H3 npn‐HBTs up to ft/fmax=110/180GHzVbreakdown up to 7V
SG13S npn‐HBTs up to ft/fmax=250/300GHz3.3V I/O CMOS1.2V logic CMOS
SG13G2 ft/fmax=300/500GHz
6
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Passives PICPhotonic
IntegratedCircuits
waveguideoptics
+modulators
Ge-photodetector
+full
BiCMOS
Si ‐ Photonics Development Lines
EPICElectronicPhotonic
IntegratedCircuits
7
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
IHP Si-Photonics technology
-40
-30
-20
-10
0
sign
al [d
Bm
]
1.57x10-61.561.551.541.53
wavelength [µm]
8
Shallow etchedLinear loss
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
single-mode fibre,
10°
TE
adiabatic taper
TE
10µm wide waveguidegrating
Coupling via Grating
Grating coupler:
• No need for a polished facet• Wafer scale testing• Wafer-level packaging• Compatible with SMF• Flexible and cheap
D. Taillaert et. al., IEEE J. Quantum Electron., vol. QE38 (2002), pp. 949 - 955
9
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Present optical i/o Standard linear
Linear enhanced
LD PIC/EPICTX & RxSM fiber
Gratingcoupler
~10µm spot
1550nm
-12
-8
-4
0
Cou
plin
g Lo
ssl [
dB]
1.601.581.561.54
Wavelength [µm]
Enhanced 1d-Grating
10
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Germanium photodetectorsGe waveguide photodiode
Cross section
S. LischkeIEEE Phot. Conf., San Francisco, 2012
11
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
WG-coupled Ge lateral PIN PD
• 30(+) GHz (-3dB) bandwidth• 0.6(+) A/W internal respon-
sivity @ λ= 1.55µm
S21 frequency response
• Nice dark current behavior
Ridge waveguide
Selectively grown Ge
12
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Photonic components need SOIfor low loss!!but “optimum for photonics” SOI dimen-sions are by far not optimal or even unfitfor SOA-CMOS and, fortiori, SOA-BiCMOS!!
CMOS: both Si (220nm) and SiO2 layer (2µm) much too thickHBT: Si layer much too thin for a low-RC collector fabrication; bad head dissipation due to higher RTH of SiO2, compared to Si
Photonic BiCMOS substrate issue
Si substrate
“Buried”SiO2 layer
Si on isolator: 220nm
2µm
13
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Photonic components need SOIfor low loss!!but “optimum for photonics” SOI dimen-sions are by far not optimal or even unfitfor SOA-CMOS and, fortiori, SOA-BiCMOS!!
CMOS: both Si (220nm) and SiO2 layer (2µm) much too thickHBT: Si layer much too thin for a low-RC collector fabrication; bad head dissipation due to higher RTH of SiO2, compared to Si
Solution:“Local-SOI”enables integration ofbest of Si-photonicsinto best Bi(CMOS)!!
“Reconstructed”Si substrate
Si substrate
Locally buried SiO2 layer
Si: 220nm
Photonic BiCMOS substrate issue
Si substrate
“Buried”SiO2 layer
Si on isolator: 220nm
2µm
14
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Local-SOI fabrication
• Locally removing SOI structure by RIE / wet etch sequence
• Selective Si epitaxy
• Planarization by Si-CMP
Optimizing to keep usual device yield numbers of parent BiCMOS process!!
epitaxy
D. Knoll et al., ECS Transactions, 50, 9, pp. 297-303 (2012)
15
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Nonlinear Optics in Silicon Photonics Klaus Petermann
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Receiver EPIC
Photonic BiCMOS (SG25H1): Receiver (Ge-PD + SiGe-TIA)
TIA
16
D.Knoll et al, OFC 2014
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Photonic BiCMOS (SG25H1): Receiver (Ge-PD + SiGe-TIA)
TIA
17
Receiver EPIC
D.Knoll et al, OFC 2014
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Receiver measurement results (I)
Normalized receiver frequency response
•On wafer characterization
• Setup limitations• Incoupling angle• Incoupling power
•Reduced coupling efficiency
•12‐15 GHz bandwidth
• fits to 20(+) Gbpsfunctionality
18
D.Knoll et al, OFC 2014
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Fachgebiet Hochfrequenztechnik
• Sampling oscilloscope with 70 GHz sampling head• Scale: vertical 20mV/division, horizontal 20ps/div
Receiver measurement results (II)
Eye diagrams for received data
231‐1 PRBS word length
Nicely opened eye still at 25Gbps
20Gbps 25Gbps
10Gbps
120mV
19
D.Knoll et al, OFC 2014
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Coherent Receiver
20
Coherent receiver with integrated TIAs, see G.Winzer et. al. Paper M3C.4, OFC 2015, 23rd March 2015
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Tuning section
High speed phase modulator
Input
2x1 MMI
2x2MMI
High speed phase modulator
Low speed phase modulators
Outputs
Modulator with 10Gbit/sec driver
Phase shift + tuning
21
L. Zimmermann et al, ECOC 2013
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Photonic BiCMOS: Driver + Mach-Zehnder modulator
Driver
MZI modulator Operatingpoint tuning
50Ω termination
Data input Power supply
DC tuning 10Gbit/sec
22
L. Zimmermann et al, ECOC 2013
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Nonlinear Optics in Silicon Photonics Klaus Petermann
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Photonic BiCMOS
23
Nonlinear Optical Signal Processingusing Photonic BiCMOS Devices
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Material Nonlinear coefficient
γ [W-1m-1]
Si3N4 1.4
10
C. Koos et al.; Nature Photon. Vol. 3, pp. 216–219, April 2009SOH (Silicon-organic-hybrid) 100
c-Si-nanowire (crystalline) 300
a-Si-nanowire (amorphous) 1200 C. Grillet et. al.; Optics Express, vol. 20,pp. 22609-22615. 2012
Waveguides for Kerr-relatednonlinear signal processing
HNLF 0.02
D.J. Moss et al.; Nature Photon.,vol.7, pp. 597-607, August 2013
Chalcogenide glass R. Neo et al.; Optics Express, vol. 21.,pp. 7926-7933, April 2013
24
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Fachgebiet Hochfrequenztechnik
• High nonlinearity γ ~ 300 W-1m-1
• Low loss down to α ~ 0.3 dB/cm
• 100m HNLF 1cm Si nanowire
c-Si for Kerr-relatednonlinear optical signal processing
positive
negative • Two photon absorption βTPA ~ 0.5 … 1 cmGW-1
• Free carrier absorption due to TPA
25
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Nonlinear Optics in Silicon Photonics Klaus Petermann
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Nonlinear loss mechanisms in silicon
Two-photon absorption (TPA), λ< 2.12 µm
Free carrier absorption (FCA)
Free carrier induced index change (FCI)
26
Operation at telecom wavelengths ~ 1.55 µm
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Limitations due to Two-Photon-Absorption
φNL,max = Aeff γ /βTPA =2π FOM ~ 3 rad
• Absorption αTPA = βTPAP/Aeff due to βTPA negligible up to ~ 100 mW pump power
• Removal of free carriers essential (otherwise only pulsed operation)
For telecom wavelengths @ 1.55 µm
Maximum nonlinear phase shift @ 1.55 µm
allowing for maximum parametric gain ~ 5 dB
φNL = γ P Leff < γ P / αTPA = φNL,max
27
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• Several optical nonlinear effects in SOI waveguides were observed:–Four Wave Mixing (FWM)1,2,3,4,5
–Self Phase Modulation (SPM)6
–Cross Phase Modulation (XPM)6
–Spontaneous and Stimulated Raman Scattering (SRS)7,8
• Applications utilizing nonlinear effects:–Amplification of light–Optical signal processing, e.g. wavelength conversion
28
1 Y. H. Kuo et al., Opt. Express 14, 20062 W. Mathlouthi et al., Opt. Express 16, 20083 M.A.Foster et al., Opt. Express 15, 20074 A. C. Turner-Foster et al., Opt. Express 18, 2010
5J. R. Ong et al., IEEE PTL. 25, 1699-1701 (2013)6 Q. Lin et al., Opt. Express 15, 20077 R. Claps et al., Opt.Express 11, 20038 M. Krause et al., Opt. Express.12, 2004
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Silicon waveguides withreverse biased p-i-n junction
p i n
p-i-n junction across the nonlinear silicon waveguide
• Sweep the carriers generated by two-photon absorption
• Reduce effective carriers lifetime down to 10... 20 ps
⇒ limits the impact of free-carrier absorption
Y.H. Kuo et. al., Opt. Express 14 (2006) 11721 - 11726.W. Mathlouthi et al., Opt. Express 18 (2008) 16735 - 16745.
J. R. Ong et al., IEEE Photon. Technol. Lett. 25 (2013) 1699 - 1702.
29
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Structure geometry
30
2.5 mm
0.6 mm
4 cm long waveguide
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Waveguide technology cross section
31
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Fabrication
32Andrzej Gajda
• Used technology : BiCMOS (IHP Frankfurt (Oder))
• 8” SOI wafers, 220 nm top Si layer and 2 μm buried oxide (BOX)
• Linear loss lower than 1 dB/cm for waveguides with 50 nm slab andp-i-n diode
• Doping level in p and n regions of 1017 cm-3
p i n
1,2 um
500 nm
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Electric field distribution
Shallow rib allows for higher field in the waveguide region
A. Gajda et al., Opt. Express, vol. 19, pp. 9915 – 9922, May 2011
33
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FCA vs Bias voltage for different slab heights
Intensity 1.65 108 W/cm2
wi = 1200 nm
Shallower etch ⇒
Lower loss
A. Gajda et al., Opt. Express, vol. 19, pp. 9915 – 9922, May 2011
34
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Carriers screening effect simulation
shallower etch depth ⇒ higher carrier screening threshold
A. Gajda et al., Opt. Express, vol. 19, pp. 9915 – 9922, May 2011
35
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Photo current due to TPA with reversed pin junction
36
H. Tian et al., JEOS:RP, Aug. 2012
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Free carrier absorption threshold
-5 0 5 10 15 20 25
-5
0
5
10
coupled power (dBm)
outp
ut p
ower
(dBm
)
w/o junction
-5 0 5 10 15 20 25
-5
0
5
10
coupled power (dBm)
outp
ut p
ower
(dBm
)
w/o junctionw/ junction 20 V
6.5 dBm 19.5 dBm
37
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Nonlinear Optics in Silicon Photonics Klaus Petermann
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Four-wave mixing in silicon
Silicon
38
Phase matching κ=0 required
β2 < 0 (anomalous dispersion)corresponds to dτ/dλ > 0
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik 39
W
sSi
SiO2
SiO2H
W
sSi
SiO2
Si3N4H
Chromatic DispersionSiO2 cladding Si3N4 cladding
Anomalous dispersion, requirements: high H, low s, SiO2 cladding
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Nonlinear Optics in Silicon Photonics Klaus Petermann
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Silicon waveguides - optical properties
*1D grating couplers with 35 nm bandwidth
Waveguide parameters not yet optimum for optical signal processing
40
Quantity Value UnitLength 4 cmLoss 1 dB/cmTPA coeff. 0.5 cm/GWNonlinear coeff. 280 W-1·m-1
Coupling loss* 4.5 dB/facet
Chromatic dispersion - 2450 ps km-1·nm-1 Wrong sign
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Nonlinear Optics in Silicon Photonics Klaus Petermann
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Four Wave Mixing measurement setup
41
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Conversion efficiency
• Signal output to Idler output ratio
• used in experimental work (**)
– easy to measure (using Optical Spectrum Analyzer)
( )( )
(**)
LPLP
signal
idler=η
(**) Y. Kuo et al. Opt. Express 14, 11721-11726 (2006)
42
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Fachgebiet Hochfrequenztechnik
Waveguides without p-i-n
Pump wavelength λpump= 1552.5 nm
Signal wavelength λsignal = 1550.0 nm
Maximum efficiency -23 dB @ Ppump = 26 dBm
Waveguide lengths L = 1cm and L = 4 cm
43
A. Gajda et al., Opt. Express, vol. 20, pp. 13100 – 13107, June 2012
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FWM in p-i-n diode assisted waveguide
44
Pump wavelength λpump= 1552.5 nm
Signal wavelength λsignal = 1550.0 nm
Conversion efficiency ηmax ~-2 dB @ Ppump= 26 dBm
Waveguide length L = 4 cmA. Gajda et al., Opt. Express, vol. 20, pp. 13100 – 13107, June 2012
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Wavelength conversion vs. detuning for different pump wavelengths
Waveguide length L = 4 cmBias voltage: Ubias = 20 VPump power Ppump = 26 dBmMaximum efficiency ηmax(λpump=1542nm, Δλ=3nm)=-0.7 dB
-0.7 dB our work
-5.5 dB Malouthi et. al., Intel 2008
-8.5 dB Kuo et. al., Intel 2006
-4.4 dB Ong et.al., UC San Diego 2013
A. Gajda et al., Opt. Express, vol. 20, pp. 13100 – 13107, June 2012
45
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Bit Error Rate (BER) Measurement setup
46
MZM
PUMP1552.0 nm
SIGNAL1550.5 nm
40 Gb/s NRZ OOK
EDFA
DC BIAS
OBPF
OBPF
PRE‐AMPLIFIED
RECEIVERDUT
PC
PC
Pump power in the waveguide : 20 dBm Signal power in the waveguide :0 dBm
A. Gajda et al., Group IV Photonics 2013
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Fachgebiet Hochfrequenztechnik
Wavelength converter output spectra
1549 1551 1553 1555-80
-60
-40
-20
0
wavelength (nm)
rela
tive
pow
er (d
B)
no junction
1549 1551 1553 1555-80
-60
-40
-20
0
wavelength (nm)
rela
tive
pow
er (d
B)
no junction0 V bias
1549 1551 1553 1555-80
-60
-40
-20
0
wavelength (nm)
rela
tive
pow
er (d
B)
no junction0 V bias20 V bias
Bias (V) CE (dB)
no junction -26.9
0 -8
20 -4.6
47
A. Gajda et al., Group IV Photonics 2013
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Measured bandwidth of FWM
1540 1545 1550 1555 1560 1565
-40
-30
-20
-10
0
Signal wavelength [nm]
Con
vers
ion
Effi
cien
cy [d
B]
η0L sim η0L meas ηLL sim ηLL meas• 3 dB bandwidth of 10 nm
• Estimated dispersion of the waveguide D = -2450 ps/nm·km
• η0L contains incoupling loss of 4 dB per coupler
A. Gajda et al., Group IV Photonics 2013
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Fachgebiet Hochfrequenztechnik 49
Bit-Error Rate measurement
-32 -30 -28 -26 -24 -22 -20 -18
-9
-8
-7
-6
-5
-4
-log(
BER
)Prec [dBm]
B2BSignal, 20V biasIdler, 20V biasIdler, 0V bias
Back to back Idler 20V bias
w/o junctionIdler 0V bias
The power penalty of 0.2 dB for idler in the 20V bias case
A. Gajda et al., Group IV Photonics 2013
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Phase-sensitive Signal Processing
50
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Four – wave mixing (χ(3))
51
Phase – sensitive parametric processing (one mode PSA)
non-degenerate 4-wave mixing
pump 1 pump 2signal
idler
Processing of the signal becomes phase - sensitive
pump 1 pump 2signal + idler
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CW
OPTICALPROCESSOR
OSA
PM
EDFA
DC BIAS
Si WAVEGUIDE
PC
1547.8 1548.8 1549.8 1550.8 1551.8-50
-40
-30
-20
-10
0
Wavelength [nm]
Pow
er [d
Bm
]
Phase sensitive amplification – set up
F. Da Ros et al., ECOC 2013
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Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Evidence of phase-sensitivity in Si
-0.8 -0.4 0 0.4 0.8-60
-50
-40
-30
-20
-10
0
10
wavelength detuning (nm)
rela
tive
pow
er (d
B)
i/p
-0.8 -0.4 0 0.4 0.8-60
-50
-40
-30
-20
-10
0
10
wavelength detuning (nm)
rela
tive
pow
er (d
B)
i/po/p max
-0.8 -0.4 0 0.4 0.8-60
-50
-40
-30
-20
-10
0
10
wavelength detuning (nm)
rela
tive
pow
er (d
B)
i/po/p maxo/p min
28 dBm total power correspond to 20.5 dBm(110 mW)/pumpinside waveguide
• 28 dBm total power
• pump-to-signal power ratio: 30 dB
• L= 4 cm
• Reverse bias: 25 V
• Signal phase shift:
F. Da Ros et al., ECOC (2013) P.2.11.
53
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Fachgebiet Hochfrequenztechnik
Phase sensitive extinction ratio optimisation
pump power
0 50 100 150 200 250 300-25
-20
-15
-10
-5
0
phase (deg)
norm
alis
ed g
ain
(dB)
Pp=24 dBm - 20 V
0 50 100 150 200 250 300-25
-20
-15
-10
-5
0
phase (deg)
norm
alis
ed g
ain
(dB)
Pp=24 dBm - 20 VPp=26 dBm - 20 V
0 50 100 150 200 250 300-25
-20
-15
-10
-5
0
phase (deg)
norm
alis
ed g
ain
(dB)
Pp=24 dBm - 20 VPp=26 dBm - 20 VPp=28 dBm - 20 V
0 50 100 150 200 250 300-25
-20
-15
-10
-5
0
phase (deg)
norm
alis
ed g
ain
(dB)
Pp=24 dBm - 20 VPp=26 dBm - 20 VPp=28 dBm - 20 VPp=28 dBm - 25 V
L= 4 cm
waveguide length
0 50 100 150 200-30
-25
-20
-15
-10
phase (deg)
gain
(dB)
L= 1 cm w/ junction
0 50 100 150 200-30
-25
-20
-15
-10
phase (deg)
gain
(dB)
L= 2 cm w/ junctionL= 1 cm w/ junction
0 50 100 150 200-30
-25
-20
-15
-10
phase (deg)
gain
(dB)
L= 4 cm w/ junctionL= 2 cm w/ junctionL= 1 cm w/ junction
0 50 100 150 200-30
-25
-20
-15
-10
phase (deg)
gain
(dB)
L= 4 cm w/o junctionL= 4 cm w/ junctionL= 2 cm w/ junctionL= 1 cm w/ junction
Up to 20 dB phase-sensitive extinction ratio attainable
F. Da Ros et al., ECOC (2013) P.2.11.
54
Pp=24 dBm, -20V
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Phase regeneration for 10 Gbit/s DPSK
optical processor
EDFA
CW OBPFPM
DC
40 GHz
10 Gbit/s
phase noise emulation
DPSK Rx
PZT
feedback loop
APD
Si waveguide
pumps
signal
F. Da Ros et al., Opt. Express 22 (2014) 5029.
55
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
Phase-sensitive regenerator DPSK output spectrum
1549,12 1549,44 1549,76 1550,08 1550,40-50
-40
-30
-20
-10
0
10
Pow
er (d
Bm
)
Wavelength (nm)
Input Output
F. Da Ros et al., Opt. Express 22 (2014) 5029.
56
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik
BER evaluation for phase-regeneration
-45 -40 -35 -30 -25
2
3
4
56789
101112
average received power (dBm)
-log(
BER
)
input - w/o noise
-45 -40 -35 -30 -25
2
3
4
56789
101112
average received power (dBm)
-log(
BER
)
input - w/o noiseoutput - w/o noise
-45 -40 -35 -30 -25
2
3
4
56789
101112
average received power (dBm)
-log(
BER
)
input - w/o noiseoutput - w/o noiseinput - w/ noise
-45 -40 -35 -30 -25
2
3
4
56789
101112
average received power (dBm)
-log(
BER
)
input - w/o noiseoutput - w/o noiseinput - w/ noiseoutput - w/ noise
• 215-1 PRBS
• 4 GHz phase noise
• 0.57 phase modulation index
input output
w/o noise
w/ noise
Phase-noise penalty reduced from 10 dB to less than 3.5 dB F. Da Ros et al., Opt. Express 22 (2014) 5029.
57
TECHNISCHEUNIVERSITÄTBERLIN
Nonlinear Optics in Silicon Photonics Klaus Petermann
Fachgebiet Hochfrequenztechnik 58
ConclusionsSuccessful electronic-photonic BiCMOS co-integrated circuits
have been demonstrated
FIRST DEMONSTRATIONS
10Gb/s modulator + driver
25Gb/s Germanium PD + TIA
Si-nanowaveguides with pin-junctions allowfor advanced all-optical signal processing
-Highly efficient wavelengh conversion
-Phase sensitive parametric amplification