november 18, 2002 1. shortchannel effects (cont.)...nov. 19 c. stork (ti): sub 100 nm process devel...
TRANSCRIPT
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 311
Lecture 31 The ”Short” MetalOxideSemiconductor FieldEffect
Transistor (cont.)
November 18, 2002
Contents:
1. Shortchannel effects (cont.)
Reading assignment:
P. K. Ko, ”Approaches to Scaling.”
Seminar:
Nov. 19 C. Stork (TI): Sub 100 nm Process Development for SystemonChip Devices. Rm. 34101, 4 PM.
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 312
Key questions
• Why does the threshold voltage seem to depend on the gate
length of a MOSFET?
• Why does the threshold voltage of a MOSFET seem to depend
on VDS?
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 313
1. Shortchannel effects
� Vth dependence on L
Ideally, Vth does not depend on L, it only depends on xox and NA.
If L is short enough, depletion regions of source and drain start
overlapping underneath channel.
"long" MOSFET "short" MOSFET
n+n+
n+
p
n+n+
n+
p
EC EC
ΔEC
Efe Efe
Vth independent of L Vth depends on L: L Vth
Vth
Vth (long)
L
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 314
Complex 2D electrostatic problem:
• ΔVth depends on the relative strength of the lateral electrostatics
vs. the transversal electrostatics (”electrostatic integrity”).
• The tighter the gate controls φs, the weaker ΔVth dependence
on L.
Key dependencies:
• xox ↓⇒ |ΔVth| ↓
• NA ↑⇒ |ΔVth| ↓
• xj ↓⇒ Leff = L − 2 × 0.7 xj ↑⇒ |ΔVth| ↓
L
p
n+n+
n+
Leff
xj
0.7xj
This is bad! long MOSFET: Vth = f(xox, NA)
short MOSFET: Vth = f(xox, NA, L, xj)
Most important consequence: Vth harder to control in manufacturing
environment.
Vth model in next section.
n+n+n+
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 315
� Draininduced barrier lowering (DIBL)
Depletion region associated with drain junction expands as VDS ↑ ⇒ additional Vth shift.
p
n+n+
Efe EC
p
n+n+ n+n+
p
n+n+
n+
Vth
VDS
Vth (long)
L
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 316
VDS=1.5 V
VDS=0.05 V
[from Liu et al., TED 40, 86 (1993)]
�
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 317
Simple analytical approximation to ΔVth [Liu et al., TED 40, 86
(1993)]:
ΔVth = [3(φbi − φsth) + VDS]e−Leff/λ
+ 2 (φbi − φsth)(φbi − φsth + VDS)e−Leff/2λ
with characteristic length:
λ =
����� �s
�oxxoxxdmax
and
Leff = L − 2 × 0.7 xj
Quantification of DIBL:
DIBL = |Vth(VDS = VDD) − Vth(VDS = 0.1 V )| mV/V VDD − 0.1
for a certain L device.
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 318
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 319
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 3110
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 3111
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 3112
MOSFET design approach to manage DIBL:
1. shallower S/D junctions: xj = 0.1 µm → 0.05 µm
2. thinner gate oxide: xox = 9 nm → 6 nm
3. increased body doping: NA = 1.2×1017 cm−3 → 2.4×1017 cm−3
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 3113
Comparison of simple model with 2D simulations:
[from Liu et al., TED 40, 86 (1993)]
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Comparison of simple model with experiments:
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DIBL also affects Ioff : VDS ↑⇒ Vth ↓⇒ Ioff ↑
Ioff
L=10 µm
L=1 µm
[from Fichtner and Potzl, 1979]
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 3116
Empirical criteria for shortchannel effects (from 2D simulations):
Critical gate length for shortchannel behavior (set by DIBL):
2 1/3Lmin (µm) = 0.41[xjxox(WS + WD) ]
with:
• xj ≡ source and drain junction depth [µm]
˚• xox ≡ gate oxide thickness [A]
• WS, WD ≡ source and drain depletion region thickness [µm]
Figure 1, Graph from: High-Speed Semiconductor Devices. S.M. S2- 1990 John Wiley & Sons.
6.720J/3.43J Integrated Microelectronic Devices Fall 2002 Lecture 3117
Key conclusions
• Vth depends on L and VDS:
– For short L, Vth depends on L: L ↓⇒ Vth ↓.
– Draininduced barrier lowering (DIBL): impact of VDS on
Vth: VDS ↑⇒ Vth ↓.
• ΔVth reflects relative strength of lateral electrostatics vs. transveral
electrostatics (”electrostatic integrity”).
• Electrostatic integrity improves if xox ↓, NA ↑, L ↑, xj ↓.
• DIBL problematic because:
– Vth hard to control
– Ioff ↑