on-chip inductance issues - nc state university · skin effect impacts resistance and inductance...
TRANSCRIPT
![Page 1: On-Chip Inductance Issues - Nc State University · Skin Effect Impacts Resistance and Inductance • Tools often only calculate “external” or HF inductance. • Skin effect insignificant](https://reader033.vdocument.in/reader033/viewer/2022042014/5e735bc7a96702699467a809/html5/thumbnails/1.jpg)
1© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
On-Chip Inductance Issues
Dr. Paul D. Franzon(with Karthik Chandraskar, Dr. Micheal Steer, + more)
Department of Electrical and Computer Engineering Department
North Carolina State UniversityBox 7911
Raleigh, NC 27695-7911Ph. (919) 515-7351Fax (919) 515-7382
[email protected]://www.ece.edu/erl
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2© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Outline• Introduction• Review of First Principles
Signal IntegritySignal Propagation and ImpedanceInductanceSkin Effect
• Inductive “Effects”Metal StackupDelay and reflection noiseCrosstalk noiseControl issues
• MeasurementsImportance in modeling Procedures, approaches and examples
• On-Chip Spiral Inductors and TransformersExamples
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3© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Novel Systems and capabilities•RF & optical MEMS•Sibgle-chip radio•Ultra-dense packaging•Molecular Computing•Networking & DSP Hardware•IC design methodology
MicroSystems Integration
CMOS VLSI•Full Custom•ASIC•Low Power
MEMS•Bulk•Surface•Emboss•Custom
Advanced Packaging•Seamless integration•Embedded Passives
Paul D. Franzon
Nanotechnologies•Viral•Molecular
S
Au
Au
NO2
(2)(2)
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4© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
List of Projects
Current Projects:ASIC design for Optical Burst Switching (NSA)Micromachined high density packaging (SRC)High torque precision miniature motors (DARPA)Deep sub-micron IC design (NSF, Cadence, Intarsia)Chip-Package Codesign (SRC, DARPA)SOI low-power radio (NASA)RF MEMS (NSF, DARPA)Molecular Electronics (DARPA)
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5© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
InfrastructureMicroelectronics Systems Laboratory
> $1M of electronic and photonic test and measurement equipment> $100,000,000M of CAD tools
Electronics Research Laboratory>$7M of RF/microwave test and measurement equipmentTwo Network Analyzers; Probe Station; TDR, etc.
Solid State LaboratoryAbility to perform custom MEMS / micromachining steps
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6© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Signal Integrity ObjectivesOverall Design Objective in Digital Circuits:
Obtain timing and noise to avoid transition in excess of noise margin at timed elements during set-up and hold +/- skew and jitterDistribute clock with low skew and jitter + Noise < Noise Margin
Clock
Logic and InterconnectData
Flip-flops Flip-flops
D Q D Q
ClockDQ
tsetup thold Setup ViolationMetastability
Delay = skew + jitter
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7© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
…Signal Integrity ObjectivesRole of Interconnect Design and Extraction in Signal Integrity:
Signal PathsInterconnect Delay part of path delay
Excessive delay leads to set-up violationsUnderpredicted delay leads to hold violations
Excessive noise can lead to metastability, if intrude on flip-flop during set-up and hold
ClocksInterconnect can:
Increase clock skewIncrease transition time of clock (increasing skew)
Noise in excess of noise margin leads to failure
Clock1Clock2Signal
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8© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Signal PropagationPropagating Current and Voltage supported by propagating electric and
magnetic field.
Under reasonable assumptions, transmission line equations apply:
P S G
CjGLjR
YZZ
CjGLjRZY
eVeVZ
I
eVeVV
xx
xx
ωω
ωωγ
γγ
γγ
++==
++==
+=
+=
−−
+
−−
+
0
0
))((
)(1Note:
•Transmission line propagation (approach ~ 0.3 speed of light) if
Rl < 2√(L/C);
•Otherwise RC-like propagation as R > ωL
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9© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Transmission Line “Behavior”Zdrv Z0
Vswing Z0/(Zdrv+Z0)t>l/v
T=2l/v
T>2l/v
T>3l/v
l
100% reflection
If Zdrv = Z0No reflection
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10© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Switching ScenariosSource impedance matched
Good-size driver
Zdrv = Z0 l
Vswing
l/v 2l/v
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11© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Signal PropagationTransmission Line Propagation•√(LC) delay•Model
2-6 segments typical
•Potential for Reflection Noise(Requires large driver,Zdrive ~ √(L/C))
RC Propogation•RC Delay
Source: Qi, et.al.”On-Chip InductanceModeling of VLSI Chips,”ISSCC 2000length < tR vprop/10
Source: Kleveland, et.al. “Line Inductance Modeling And Extraction in a Real Chip with Power/Ground Grid”, IEDM 98.
Non-Physical
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12© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Signal Return PathThe signal return path is as important as the signal path
• It exists whether provided for or not
• Think of “return” structures, not just power and ground.• Its an AC path
Decoupling capacitance often provides the path between different reference planes
In an IC, Return Path consists mainly of Power/Ground Grid and Other Signal Paths.
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13© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Return Path is Frequency DependentReturn signal seeks the path of least impedance
When frequency is low = path of least resistanceWhen frequency is high = path that minimizes current loop
=> A source of frequency dependanceIf R and jωL are comparable, a frequency dependency referred to as the proximity effect enters into the issue.
LjRZ ω+=
Return current at low frequencyGround Plane
Signal Line
Return current at high frequency
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14© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
InductanceDefinition
L = N φ/I
Inductance is only properly defined wrt a current loopReturn paths identified
Effect of inductanceV = L di/dt
Impedes changes in current
Partial InductanceMathematical abstraction of “partial inductance” often used by modeling tools to avoid problem of modeling loop
φ
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15© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Partial Inductance• Tools model partial inductances
Can be directly input to Spice simulator as inductance between pairs of nodes• Loop inductance “calculated” by
Explicitly identifying the return path, orImplicitly identifying the return path by doing a circuit simulation on a netlist containing partial inductances (+ Ls and Cs)
• ExamplePartial inductance L11 or L22Loop inductance (the ‘real’ inductance). If conductor 2 is a ground, L = L11 + L22 - 2 M12
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16© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Skin EffectMinimizing jωL at high frequencies leads to current crowding:
Increasing Frequency
Current Density
Depth
JS0.37 JS
Skin Depth
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17© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
…Skin EffectSkin depth defined as distance current density is 1/e that of surface.
Skin effect becomes important as δS starts approaching thickness/2.Rough approximate skin effect resistance:
ρ = resistivity, w = width• 1 µm thick IC trace: Skin effect insignificant below ~4 GHz
.typermeabili,/
==
µπµρδ fS
Sskin wR
δρ≈
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18© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Skin EffectImpacts Resistance and Inductance
• Tools often only calculate “external” or HF inductance.• Skin effect insignificant for most ICsInductance Data Source : Massoud et.al. “Layout Techniques for Minimizing On-Chip Interconnect Self
Inductance,” 1998 DAC.
Inductance (nH/cm)
1
1.5
2
2.5
3
3.5
4
1.0E+06 1.0E+08 1.0E+10 1.0E+12 1.0E+14
Inductance(nH/cm)
Resistance (W/cm)
0
2000
4000
6000
8000
10000
12000
14000
16000
1.0E+06 1.0E+08 1.0E+10 1.0E+12 1.0E+14
Resistance(W/cm)
G S G1µm
1µm1µm
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19© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Proximity EffectMore important than skin effect in determining frequency dependence
Return path resistance function of frequency(However, single frequency modeling usually satisfactory – choose frequency
between 1/(2tr) and 1/(3tr))Note: Can not make signal wire arbitrarily wide to obtain low-R.
G S P G S PIncreasing Frequency
Signal Current Path
Return Current Paths
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20© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Outline• Review of First Principles
Signal IntegritySignal Propagation and ImpedanceInductanceSkin Effect
• Inductive “Effects”Metal StackupDelay and reflection noiseCrosstalk noiseControl issues
• MeasurementsImportance in modeling Procedures, approaches and examples
• On-Chip Spiral Inductors and TransformersExamples
![Page 21: On-Chip Inductance Issues - Nc State University · Skin Effect Impacts Resistance and Inductance • Tools often only calculate “external” or HF inductance. • Skin effect insignificant](https://reader033.vdocument.in/reader033/viewer/2022042014/5e735bc7a96702699467a809/html5/thumbnails/21.jpg)
21© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Typical Conductor Stack-UpSample 6-layer process:
Note : Even one thick metal can be “hard to get”
... 2.1 µm
Min: 1.8 µm
M61.36 µm1.37 µmM5
M4M3M2M1
0.73 µm
Global Power/Ground/Signal
Cell Power/Ground/Signal
Local Power/Ground/Signal
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22© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Clock NetsIncluding L is important to accurately predicting clock skew and both L and Rreturn
are important for predicting transition time.
Thin M4 Thick M5Source: P. Restle, “Measurement and Modeling of On-Chip Transmission Line Effects in a 400 MHz Microporocessor,”
IEEE JSSC, 33(4), April 1998.
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23© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Data Nets• Delay issues identical to clock nets• Noise Issues:
Common mode noise when signals share power/grounds (R12)Requires return path resistance modeling for full analysisTransmission line noise : Noise different at each end
Source:Deutsch, et.al.“Multiline Crosstalk and Common Mode Noise,” 2000.
Q = Quiet Line= Power or Ground
12 µm pitch, 5 mm lines
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24© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Improving Crosstalk NoiseImprove by increasing power/ground density
Worst Case:55 – 150 mV(10% Vswing)
Source:Deutsch, et.al.“Multiline Crosstalk and Common Mode Noise,” 2000.
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25© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
On-Chip Inductance “Control”• Important for longer lines only
For ~ 100 nm gates; tR ~ 50 psShort Lines
√(LC) l < 0.25 tRR > 1000 Ω/cm; l < 500 µm; C ~ 2-3 pF/cm; L ~ 3-5 nH/cmZdrv >> ZORC dominated
Medium LinesR ~ 200 – 300 Ω/cm; l ~ 1-3 mm; Zdrv < 3 ZORC dominated
Long linesR < 100 Ω/cm; Zdrv ~ 50 Ω (Z0); R, Zdrv low to make fast3 - 10 mmRLC approach essential
Source: Deutsch, “On-Chip Wiring Design Challenges for GHz operation,” Proc. IEEE, April 2001
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26© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
On-Chip Inductance “Control”For Long Nets:• Make inductive effects easier to predict by explicitly providing return
pathsPower/Ground Shields both sides of clockLow ratio of P/G to signals for buses
• Determine design rulesDriver impedance, wire-widthSpacing, width, P/G density for crosstalk and CM noise
• Must use modeling toolsAt least inductance; preferably resistance also for clocks
• Consider buffer insertion and line “twisting” to reduce inductance impact
Must calibrate models with measurementsNo modeling tool can capture all effects
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27© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Outline• Review of First Principles
Signal IntegritySignal Propagation and ImpedanceInductanceSkin Effect
• Inductive “Effects”Metal StackupDelay and reflection noiseCrosstalk noiseControl issues
• MeasurementsImportance in modeling Procedures, approaches and examples
• On-Chip Spiral Inductors and TransformersExamples
![Page 28: On-Chip Inductance Issues - Nc State University · Skin Effect Impacts Resistance and Inductance • Tools often only calculate “external” or HF inductance. • Skin effect insignificant](https://reader033.vdocument.in/reader033/viewer/2022042014/5e735bc7a96702699467a809/html5/thumbnails/28.jpg)
28© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Measurements1. Use Realistic Test Structures
• Include rich set of parasitic structures, not sparse structures• Range of line lengths
• Short lines hard to remove phase error• Long lines are too lossy
• Include on-chip de-embedding structures (see our web pages)2. Consider Time Domain and Frequency Domain
• Time Domain Reflectometry• Easier but limited by rise-time; no frequency dependance
• E-beam : sampling oscilloscope• On-chip sampling oscilloscope• Frequency Domain : S parameters (Network Analyzer)
• Gives frequency dependance• De-embedding procedure can be difficult
• On-chip calibration structures hard to get 50 Ω match• Off-chip calibration structures lead to inaccurate results
3. Keep extraction physical• Model what can be modeled, then numerically fit
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29© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Test StructuresExamples:
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30© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Time Domain vs. Frequency Domain• Time Domain Reflectometry
• Easier but limited by rise-time; no frequency dependance • Frequency Domain : S parameters (Network Analyzer)
• Gives frequency dependance• De-embedding procedure can be difficult
• On-chip calibration structures hard to get 50 Ω match• Off-chip calibration structures lead to inaccurate results
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31© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
NCSU S-parameter Test ResultsAfter De-embedding:
Resistance,Inductance
Characteristic Impedance,
Mag. & Phase
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32© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Outline• Review of First Principles
Signal IntegritySignal Propagation and ImpedanceInductanceSkin Effect
• Inductive “Effects”Metal StackupDelay and reflection noiseCrosstalk noiseControl issues
• MeasurementsImportance in modeling Procedures, approaches and examples
• On-Chip Spiral Inductors and TransformersExamples
![Page 33: On-Chip Inductance Issues - Nc State University · Skin Effect Impacts Resistance and Inductance • Tools often only calculate “external” or HF inductance. • Skin effect insignificant](https://reader033.vdocument.in/reader033/viewer/2022042014/5e735bc7a96702699467a809/html5/thumbnails/33.jpg)
33© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
On-Chip Inductors and TransformersModeling Needs• Need accurate models for higher-Q circuits (e.g. frequency synthesizers)
and lower accuracy for broader band circuits• Complexities due to substrate “ground” shields
Tessalated PolysiliconRich wiring grid
Measurement Issues• Still need to calibrate models• S-parameter measurements more reliable in this domain
C/- Dogan, NCAT
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34© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
OEA-Spiral Inductor Simulation-Measurement
9 turn Inductor ,Width 1.2um, InterTurn Spacing 1.2um,Outer Diameter 50um(Left-Layout ,Right-3D Model)
L(from Spiral)=1.89nH(without PGS); L(from Formulae[7]=2.08nH; L(extracted from S-parameter data=2.6nH(with PGS)
•Calibration still needed (ground shield)[7]Jose M.Cruz et.al,”On Chip Inductors and Transformers”
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35© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
AC Coupled Interconnect Concept
New IdeasNew Ideas•AC coupled connections down to 70 µm pitch•Short- or long-range capacitive or inductive coupling•Buried solder bumps to bring chips into proximity•High-speed, low-power current switching techniques
(100:1 high-Z probe)
Substrate
DC Connection(Solder Bump)VLSI Chip
AC Connections
TrenchInterconnection
Layer
VLSI Chip
Trench
DC Connection(Solder Bump)
SolderBump C
hip
L-C Pads
SubstrateBumpPad
L-C Pads
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36© 2002, Dr. Paul D. Franzon, www.ece.ncsu.edu/erl/faculty/paulf.html
Coupled Inductor Measurements
TSMC 0.25µm 5 metal processPolysilicon shieldMetal1/Metal4 50µm diameter spirals
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…Coupled Inductor Measurements
TSMC 0.25µm process; 50µm Spiral Inductor; 9 Turns
-10dB
-14dB
-16dB
-18dB
-20dB
-22dB
1GHz 5GHz 10GHz 15GHz 20GHz
chip 2
chip 1
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Coupled Inductor ModelCapacitance and Resistance
Calculated from TSMC process parametersInductance calculated from formulas in literatureUse model to match measurements and make predictions
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109 1010-28
-26
-24
-22
-20
-18
-16
-14
-12
Mag
S21
(dB
)
Frequency (Hz)
Measurement and Model
Model to Match MeasurementsModel generation
Measure S-parametersOpen circuit - pads only50um x 50um 9 turn coupled inductors
De-embed effects of padsLumped model
Model ValuesCp = 180fFCps = 15fFRp = 65ΩRs = 65ΩLp = 2.8nHLs = 2.8nHK = 0.5
Measurement vs ModelSimple model provides excellent fit
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Conclusions• On-chip inductance important in long-range connections
Roughly > 3 mm todayIncludes inductive effect on resistanceDelay, Transition Time, Noise all impacted
• Management StrategyModeling, as calibrated by measurementSimulation of realistic structuresRules-driven design
Driver SizingPower/Ground (return) designWire SizingBuffers, twists, etc.
• Spiral Inductors and TransformersEasier to manage but fidelity needs greaterMeasurement confirmation and calibration still essential