onepot approach_znse_follow.pdf

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Comparison of the propertienanocrystallites: Single- andHimani Sharma a,d, Shailesh N. Sharma Electronic Materials Division, National Physical Laboratory,b Electron Microscape Section, National Physical Laboratory, DcUSIC, University of Delhi, Delhi 110007, Indiad Department of Chemistry, University of Delhi, Delhi 110007


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structure have not been successful in yielding cortals with desirable properties [14]. For the Cdpractically not much work has been done, whereCdSe-CdS are the most intensively studied ones [1tage of usingZnSe is its lattice parametermismatcsmaller ~ 0 . 0 7 as compared to ZnS ~ O . l l , due todefects, and non-radiative decay would be mucondly, its band gap is wider (2.72 eV) than that ofa requisite condition for an effective confinemand holes within CdSe core [15a]. Though traditisemiconductor QOs have been widely popular fofluorescent properties, not much literature could


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(A)21 (a)= 18.!!. 15

Ql(,,) 12cll.c...

90Ul.c 6 600 nm indicating better surface passivatiaddition to TOP/TOPO groups. In addition, thPL peak remained essentially unchanged (FWing core-shell formation, indicating that the Cdremained substantially monodispersed.


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1.31.2

::::l.e 1.1i:''iiil: 1.0$.Eii 0.9


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(A)


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I I ZnSec;;-o800

~ 700::i'"i 600c=U 500

900 r - - - - - - - - - - - - - - - - -


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(A)


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to the shell thickness, the nanocrystallite sizeas compared to Zn ~ 20 at.% case is a fur therformation of thin shell of ZnSe and diffusion olattice. The dual-phase morphology depicted b(Fig. 3(c)) also clearly points towards the simuof both ternary ZnxCd 1_xSe and core-shell CdSZn ~ 40 at.%. However, upon further increasenanocrystallite system is devoid of any thinand CdSe-core and only ternary ZnxCd 1_xSe alloas represented pictorially by Fig. 7A(e). High


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[19J N. Shailesh, Sharma, S. Zeena, P. Pillai, V. Kamat,J. P10088.[20J H. Sharma, S.N. Sharma, G. Singh, S.M. Shivaprasad, P[21 J JA Gaunt, AE. Knight, SA Windsor, V. Chechik, J. C(2005) 437.[22J AR. Kortan, R. Hull, R.L. Opila, M.G. Bawendi, M.L. StBrus,J. Am. Chern. Soc. 112 (1990) 1327.[23J V.V. Nikesh, S. Mahamuni, Semicond. Sci. Technol. 16[24J G. Bhagavannarayana, N. Shailesh, R.K. Sharma, S.T.Mats. Chern. Phys. 97 (2006) 442.[25J N. Shailesh, R.K. Sharma, S.T. Sharma, Lakshmikumar264.[26J T.Y. Kim,J.Y. Kim, S.H. Lee, H.W. Shim, S.H. Lee, E.K. Su144 (2004) 61.[27J M. Azad, Malik. Neerish Revaprasadu, Paul O'Brien, Ch

onepot approach_znse_follow.pdf

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