www.nandk.com

Ultra-High Resolution &Ultra-High Sensitivity Scatterometer

with Thin Film Measurement Capabilities

Product Overview Opt iP r ime -CD

®the true measure

®Technology

FULLY AUTOMATED, HIGH THROUGHPUT

OPTICAL METROLOGY SYSTEM FOR

SEMICONDUCTOR APPLICATIONS.

OCD Applications

OptiPrime-CD

n&k OptiPrime-CDOCD Scatterometry Application ExamplesThe n&k OptiPrime-CD’s OCD scatterometry applications cover structures with very large pitches and very small pitches, 2-D and 3-D complex structures including films inside and outside of shallow and deep trenches and contact holes. Because of our patented and unique optical design, n&k Technology offers the highest signal to noise ratio and lowest cost of ownership to support your OCD requirement.

696 nm

8404 nm

959 nm

497 nm

3128 nm

296 nm1008 nm

P R O F I L E C O M P A R I S O N W I T H F I B A N D X - S E M

CrossSection

n&kResults

SiO2 on Si Trench SOI Trench (Flared CD Bottom)

124 nm

1415 nm

252 nm

985 nm

Poly Recess Trench

2 - D C O M P L E X S T R U C T U R E

n&k Results - Cross Sectional View Experimental Spectra Showing DistinctRs and Rp Polarized Spectra

Si-Rich Nitride

Poly-Si

SiO2SiN

Si

31 nm

99 nm

11 nm8 nm6 nm28 nm

67 nm

33 nm

26 nm

Rs-exp Rp-exp

0

10

20

30

40

50

60

200 300 400 500 600 700 800 900Wavelength (nm)

Rs &

Rp

(%)

1000

3 - D A S Y M M E T R I C E L L I P T I C A L H O L E S

SiO2

Experimental Spectra Showing DistinctRs and Rp Polarized Spectra

60

Rs &

Rp

(%)

0

10

20

30

40

50

190 300 400 500 600 700 800 900 1000Wavelength (nm)

Rs-exp Rp-exp

CD (Y)

CD (X)

n&k Results - Top View Cross Sectional View

155 nm

44 nm54 nm

123 nm

SiON

Pitch (X) = 300 nm, Pitch (Y) = 300 nmCD (X) = 160 nm, CD (Y) = 125 nm

Si

Poly-SiSiN

OptiPrime-CD

n&k OptiPrime-CD Performance Overview

K E Y Q U A L I T I E S O F O P T I P R I M E - C D

P A T E N T E D R E F L E C T I V E O P T I C S

112 cm x 202 cm x 189 cm770 Kg100 - 240 V, 50/60 Hz, 1ΦVacuum, CDA (for FOUP Load Port)

Dimensions (W x D x H):Weight (unpacked):

Facility Requirements:

P H Y S I C A L C H A R A C T E R I S T I C S

The OptiPrime-CD is an Ultra-High Resolution and Ultra-High Sensitivity Scatterometer with Thin Film Measurement Capabilites. The system utilizes Polarized Reflectance (Rs, Rp) data to determine the optical properties (n and k), and thicknesses of thin films and critical dimensions (depth, CDs, and profiles) of the structures being analyzed. This fully-automated system can be configured for various size wafers (300 mm (12”), 200 mm (8”), 150 mm (6”)) for a large variety of semiconductor applications. Raw reflectance data is acquired over a wide wavelength range (190 – 1000 nm) with optimized signal-to-noise ratio, resulting in the capability of the OptiPrime-CD to characterize increasingly smaller features of current and next generation products.

The n&k software combines the Forouhi-Bloomer (FB) equations and Rigorous Coupled Wave Analysis (RCWA) to analyze the raw data. The Forouhi-Bloomer (FB) equations, derived from first principles of quantum physics, are universal equations describing the Refractive Index, n, and Extinction Coefficient, k, as functions of wavelength, λ, whereas RCWA determines optical critical dimensions. By combining FB and RCWA, very complex and complicated structures can be readily analyzed.

Also available is the manual-load, and cost-effective counterpart of the OptiPrime-CD, the n&k OptiPrime-CD-M, utilizing the same optical configurations and analysis capabilities, but without the automatic loading system.

M E T H O D O F A N A L Y S I S

Optimized Signal-to-Noise Ratio

• Optimized Polarized Reflectance (Rs and Rp) Data - Wavelength Range: 190 - 1000 nm - Micro-Spot Technology• Can be Configured for 300 mm (12”), 200 mm (8”),

and 150 mm (6”) Wafers• Fully Automated• Based on Patented Reflective Optics that Optimizes the

Signal-to-Noise Ratio• Strong Sensitivity to Sub-Nanometer Structural and

Material Variations - Thickness, n and k (from 190 – 1000 nm)• OCD Metrology for 2-D and 3 -D Structures

(Trenches and Contact Holes) - Depth, CD, Profile• Cognex Pattern Recognition Software• No Re-Alignment Issues Upon Light Bulb Replacement• Modular design – Easy to Maintain and Service• GEM/SECS Communication Interface• SEMI Standard and Third Party Certifications

M E T R O L O G Y P R E R E Q U I S T E S F U L L F I L L E DB Y O P T I P R I M E - C D

S Y S T E M O P E R A T I O N F L O W

Data Acquisition

Analysis

Results

• Optimized Polarized UV-Vis-NIR Reflectance• (Rs and Rp) from 190 - 1000 nm

• Forouhi-Bloomer (FB) Dispersion Equations• Rigorous Coupled Wave Analysis (RCWA)

• Optical properties: n and k from 190 - 1000 nm• Film thickness• OCD metrology (depth, CD, profile)

• Optimized Signal-to-Noise Ratio & Large Dynamic Range of Detection

• Wide Wavelength Range (190 - 1000 nm) & Ultra-High Resolution

• Physically Valid Model (FB & RCWA)• User-Friendly, Proprietary Software

The n&k OptiPrime-CD’s thin film applications cover both current and next generation thin film measurement demands for R&D and production: Ultra Thin Films and Residual Layers, Multi-Layer Stacks, Inhomogeneous Films, 193 nm and 248 nm ARCs and Resists, Low-ĸ Films, High-ĸ Films, and films deposited on practically any substrate.

Thin Film Application Examples

Light Source

Vis UV

Reflectance (R) Detector Polarizer

Sample

R O U G H P O L Y - S i O N S i O 2

• The wide wavelength range (190 - 1000 nm) of the OptiPrime-CD is needed in order to simultaneously measure the surface roughness and film thickness values

• The data is sensitive to the n and k values of the Poly-Si layer, which can be measured to determine the silicon properties (from amorphous to crystalline)

SurfaceRoughness (Å)

Poly-SiThickness (Å)

SiO2Thickness (Å)

Red 32 18245 505Green 57 15078 622Blue 85 21330 765

Spectra

SiO2

Silicon Substrate

Poly-Si (with Surface Roughness)

Wavelength (nm)

0

20

40

60

80

100

200 300 400 500 600 700 800 900

Rs (%

)

0

Poly-Si/SiO2/Si: Three Samples

1000

C O M P L E X M U L T I - L A Y E R F I L M S T R U C T U R E

• Complex multilayer film stacks can be measured with the OptiPrime-CD

• Super structures, with sets of repeating layers, can be fully modeled in the analysis software

• Film stacks containing over 80 layers have been successfully measured

3000 Å SiO2

1 µm SiNx

250 Å SiO2

15 µm Silicon1.5 µm SiO2

Silicon Substrate

300 Å Oxide

800 Å SiNx

100 Å SiO2

Silicon Substrate

{10 Pairs

Oxide / SiNx(20 Layers)

0

20

40

60

80

100

200 300 400 500 600 700 800 900

Rs (%

)

Wavelength (nm)1000

Rs-exp Rs-cal

0

20

40

60

80

100

200 300 400 500 600 700 800 900

Rs (%

)

Wavelength (nm)1000

Rs-exp Rs-cal

U L T R A T H I C K P H O T O R E S I S T

• The 1 nm wavelength resolution of the OptiPrime-CD captures all interference fringes for the 65 µm Photoresist, enabling measurement of the film thickness

• Films up to 75 µm thick have been measured using the OptiPrime-CD

65 µm Photoresist

Silicon Substrate

0

5

10

15

20

25

30

800 820 840 860 880 900 920 940 960 980 1000

Rs (%

)

Wavelength (nm)

Rs-exp Rs-cal

0

5

10

15

20

25

30

200 300 400 500 600 700 800 900

Rs (%

)

Wavelength (nm)1000

Rs-exp Rs-cal

OptiPrime-CD

n&k OptiPrime-CD Performance Overview

K E Y Q U A L I T I E S O F O P T I P R I M E - C D

P A T E N T E D R E F L E C T I V E O P T I C S

112 cm x 202 cm x 189 cm770 Kg100 - 240 V, 50/60 Hz, 1ΦVacuum, CDA (for FOUP Load Port)

Dimensions (W x D x H):Weight (unpacked):

Facility Requirements:

P H Y S I C A L C H A R A C T E R I S T I C S

The OptiPrime-CD is an Ultra-High Resolution and Ultra-High Sensitivity Scatterometer with Thin Film Measurement Capabilites. The system utilizes Polarized Reflectance (Rs, Rp) data to determine the optical properties (n and k), and thicknesses of thin films and critical dimensions (depth, CDs, and profiles) of the structures being analyzed. This fully-automated system can be configured for various size wafers (300 mm (12”), 200 mm (8”), 150 mm (6”)) for a large variety of semiconductor applications. Raw reflectance data is acquired over a wide wavelength range (190 – 1000 nm) with optimized signal-to-noise ratio, resulting in the capability of the OptiPrime-CD to characterize increasingly smaller features of current and next generation products.

The n&k software combines the Forouhi-Bloomer (FB) equations and Rigorous Coupled Wave Analysis (RCWA) to analyze the raw data. The Forouhi-Bloomer (FB) equations, derived from first principles of quantum physics, are universal equations describing the Refractive Index, n, and Extinction Coefficient, k, as functions of wavelength, λ, whereas RCWA determines optical critical dimensions. By combining FB and RCWA, very complex and complicated structures can be readily analyzed.

Also available is the manual-load, and cost-effective counterpart of the OptiPrime-CD, the n&k OptiPrime-CD-M, utilizing the same optical configurations and analysis capabilities, but without the automatic loading system.

M E T H O D O F A N A L Y S I S

Optimized Signal-to-Noise Ratio

• Optimized Polarized Reflectance (Rs and Rp) Data - Wavelength Range: 190 - 1000 nm - Micro-Spot Technology• Can be Configured for 300 mm (12”), 200 mm (8”),

and 150 mm (6”) Wafers• Fully Automated• Based on Patented Reflective Optics that Optimizes the

Signal-to-Noise Ratio• Strong Sensitivity to Sub-Nanometer Structural and

Material Variations - Thickness, n and k (from 190 – 1000 nm)• OCD Metrology for 2-D and 3 -D Structures

(Trenches and Contact Holes) - Depth, CD, Profile• Cognex Pattern Recognition Software• No Re-Alignment Issues Upon Light Bulb Replacement• Modular design – Easy to Maintain and Service• GEM/SECS Communication Interface• SEMI Standard and Third Party Certifications

M E T R O L O G Y P R E R E Q U I S T E S F U L L F I L L E DB Y O P T I P R I M E - C D

S Y S T E M O P E R A T I O N F L O W

Data Acquisition

Analysis

Results

• Optimized Polarized UV-Vis-NIR Reflectance• (Rs and Rp) from 190 - 1000 nm

• Forouhi-Bloomer (FB) Dispersion Equations• Rigorous Coupled Wave Analysis (RCWA)

• Optical properties: n and k from 190 - 1000 nm• Film thickness• OCD metrology (depth, CD, profile)

• Optimized Signal-to-Noise Ratio & Large Dynamic Range of Detection

• Wide Wavelength Range (190 - 1000 nm) & Ultra-High Resolution

• Physically Valid Model (FB & RCWA)• User-Friendly, Proprietary Software

The n&k OptiPrime-CD’s thin film applications cover both current and next generation thin film measurement demands for R&D and production: Ultra Thin Films and Residual Layers, Multi-Layer Stacks, Inhomogeneous Films, 193 nm and 248 nm ARCs and Resists, Low-ĸ Films, High-ĸ Films, and films deposited on practically any substrate.

Thin Film Application Examples

Light Source

Vis UV

Reflectance (R) Detector Polarizer

Sample

R O U G H P O L Y - S i O N S i O 2

• The wide wavelength range (190 - 1000 nm) of the OptiPrime-CD is needed in order to simultaneously measure the surface roughness and film thickness values

• The data is sensitive to the n and k values of the Poly-Si layer, which can be measured to determine the silicon properties (from amorphous to crystalline)

SurfaceRoughness (Å)

Poly-SiThickness (Å)

SiO2Thickness (Å)

Red 32 18245 505Green 57 15078 622Blue 85 21330 765

Spectra

SiO2

Silicon Substrate

Poly-Si (with Surface Roughness)

Wavelength (nm)

0

20

40

60

80

100

200 300 400 500 600 700 800 900

Rs (%

)

0

Poly-Si/SiO2/Si: Three Samples

1000

C O M P L E X M U L T I - L A Y E R F I L M S T R U C T U R E

• Complex multilayer film stacks can be measured with the OptiPrime-CD

• Super structures, with sets of repeating layers, can be fully modeled in the analysis software

• Film stacks containing over 80 layers have been successfully measured

3000 Å SiO2

1 µm SiNx

250 Å SiO2

15 µm Silicon1.5 µm SiO2

Silicon Substrate

300 Å Oxide

800 Å SiNx

100 Å SiO2

Silicon Substrate

{10 Pairs

Oxide / SiNx(20 Layers)

0

20

40

60

80

100

200 300 400 500 600 700 800 900

Rs (%

)

Wavelength (nm)1000

Rs-exp Rs-cal

0

20

40

60

80

100

200 300 400 500 600 700 800 900

Rs (%

)

Wavelength (nm)1000

Rs-exp Rs-cal

U L T R A T H I C K P H O T O R E S I S T

• The 1 nm wavelength resolution of the OptiPrime-CD captures all interference fringes for the 65 µm Photoresist, enabling measurement of the film thickness

• Films up to 75 µm thick have been measured using the OptiPrime-CD

65 µm Photoresist

Silicon Substrate

0

5

10

15

20

25

30

800 820 840 860 880 900 920 940 960 980 1000

Rs (%

)

Wavelength (nm)

Rs-exp Rs-cal

0

5

10

15

20

25

30

200 300 400 500 600 700 800 900

Rs (%

)

Wavelength (nm)1000

Rs-exp Rs-cal

www.nandk.com

Ultra-High Resolution &Ultra-High Sensitivity Scatterometer

with Thin Film Measurement Capabilities

Product Overview Opt iP r ime -CD

®the true measure

®Technology

FULLY AUTOMATED, HIGH THROUGHPUT

OPTICAL METROLOGY SYSTEM FOR

SEMICONDUCTOR APPLICATIONS.

OCD Applications

OptiPrime-CD

n&k OptiPrime-CDOCD Scatterometry Application ExamplesThe n&k OptiPrime-CD’s OCD scatterometry applications cover structures with very large pitches and very small pitches, 2-D and 3-D complex structures including films inside and outside of shallow and deep trenches and contact holes. Because of our patented and unique optical design, n&k Technology offers the highest signal-to-noise ratio and lowest cost of ownership to support your OCD requirement.

696 nm

8404 nm

959 nm

497 nm

3128 nm

296 nm1008 nm

P R O F I L E C O M P A R I S O N W I T H F I B A N D X - S E M

CrossSection

n&kResults

SiO2 on Si Trench SOI Trench (Flared CD Bottom)

124 nm

1415 nm

252 nm

985 nm

Poly Recess Trench

2 - D C O M P L E X S T R U C T U R E

n&k Results - Cross Sectional View Experimental Spectra Showing DistinctRs and Rp Polarized Spectra

Si-Rich Nitride

Poly-Si

SiO2SiN

Si

31 nm

99 nm

11 nm8 nm6 nm28 nm

67 nm

33 nm

26 nm

Rs-exp Rp-exp

0

10

20

30

40

50

60

200 300 400 500 600 700 800 900Wavelength (nm)

Rs &

Rp

(%)

1000

3 - D A S Y M M E T R I C E L L I P T I C A L H O L E S

SiO2

Experimental Spectra Showing DistinctRs and Rp Polarized Spectra

60

Rs &

Rp

(%)

0

10

20

30

40

50

190 300 400 500 600 700 800 900 1000Wavelength (nm)

Rs-exp Rp-exp

CD (Y)

CD (X)

n&k Results - Top View Cross Sectional View

155 nm

44 nm54 nm

123 nm

SiON

Pitch (X) = 300 nm, Pitch (Y) = 300 nmCD (X) = 160 nm, CD (Y) = 125 nm

Si

Poly-SiSiN