REVIEW

Overview of transient liquid phase and partial transient liquidphase bonding

Grant O. Cook III • Carl D. Sorensen

Received: 19 January 2011 / Accepted: 12 April 2011 / Published online: 7 May 2011

� Springer Science+Business Media, LLC 2011

Abstract Transient liquid phase (TLP) bonding is a rel-

atively new bonding process that joins materials using an

interlayer. On heating, the interlayer melts and the inter-

layer element (or a constituent of an alloy interlayer) dif-

fuses into the substrate materials, causing isothermal

solidification. The result of this process is a bond that has a

higher melting point than the bonding temperature. This

bonding process has found many applications, most nota-

bly the joining and repair of Ni-based superalloy compo-

nents. This article reviews important aspects of TLP

bonding, such as kinetics of the process, experimental

details (bonding time, interlayer thickness and format, and

optimal bonding temperature), and advantages and disad-

vantages of the process. A wide range of materials that

TLP bonding has been applied to is also presented. Partial

transient liquid phase (PTLP) bonding is a variant of TLP

bonding that is typically used to join ceramics. PTLP

bonding requires an interlayer composed of multiple lay-

ers; the most common bond setup consists of a thick

refractory core sandwiched by thin, lower-melting layers

on each side. This article explains how the experimental

details and bonding kinetics of PTLP bonding differ from

TLP bonding. Also, a range of materials that have been

joined by PTLP bonding is presented.

Transient liquid phase (TLP) bonding

Transient liquid phase (TLP) bonding is a joining process

that was developed to improve upon existing bonding

technologies. Specifically, this process was patented by

Paulonis et al. in 1971 [1] to overcome deficiencies of then

current bonding techniques in joining Ni-based superalloys

[2–6]. TLP bonding’s main advantage is that resulting

bonds have a higher melting point than the bonding tem-

perature. This bonding process characteristically lies

between diffusion bonding and brazing—for this reason, it

is commonly called diffusion brazing. The process is also

referred to by names such as transient insert liquid metal

bonding [7] and is sometimes mistakenly referred to as

diffusion bonding (which by definition relies solely on

solid-state diffusion). See reference [8] for a detailed his-

tory of TLP bonding and its many names.

TLP bonding process

The TLP bonding process involves the following steps:

• setting up the bond• heating to the specified bonding temperature to produce

a liquid in the bond region

• holding the assembly at the bonding temperature untilthe liquid has isothermally solidified due to diffusion

• homogenizing the bond at a suitable heat-treatingtemperature.

Bond setup usually consists of placing a thin interlayer

between the substrates, but the interlayer material is

occasionally placed outside the joint to flow in by capil-

larity [6, 7, 9–15] as is done in many brazing processes.

The interlayer material can be in many different formats:

• thin foil (rolled sheet) [2–4, 7, 16–62]• amorphous foil (melt-spun) [7, 58–84]• fine powders (with or without binding agent) [5, 7, 15–

17, 85–98]

G. O. Cook III (&) � C. D. SorensenIra A. Fulton College of Engineering and Technology, Brigham

Young University, 435 CTB, Provo, UT 84604, USA

e-mail: goc3.engineer@mac.com

123

J Mater Sci (2011) 46:5305–5323

DOI 10.1007/s10853-011-5561-1

• powder compact (made by sintering, cold isostaticpressing, etc.) [57, 99–101]

• brazing paste [9, 17, 102–104]• a physical vapor deposition process such as sputtering

[7, 18–21, 62–64, 105]

• electroplating [10, 17–19, 30, 88, 106–112]• evaporating an element out of the substrate material to

create a ‘‘glazed’’ surface [113].

A pressure is usually applied to the bonding assembly to

keep the substrates aligned and to promote bonding; specific

pressures are categorized in Table 1 by their nearest order

of magnitude. For example, pressures in the nearest order

range of 10 MPa [log(10) = 1] lie between 3.1623 MPa

[log(3.1623) = 0.5] and 31.623 MPa [log(31.623) = 1.5].

Occasionally, the substrates are held a fixed distance apart

rather than applying a pressure, but this tends to cause

porosity in the final bond [6, 19, 43].

Heating of the bond assembly and homogenizing of the

bond is performed with many different equipment setups

and can occur by the following methods:

• radiation [4, 7, 16, 17, 20, 37–43, 77–80, 105, 109, 113,122, 124, 130, 135–138]

• conduction [35–37, 83, 95, 129]• radio-frequency induction [3, 7, 11, 21–24, 60–63, 71–

76, 108, 110, 125–127, 129, 139–141]

• resistance [46, 69, 100, 110]• laser [31]• infrared [7].

The bonding process is usually confined in a vacuum [3–

5, 7, 12, 14–17, 20–30, 35, 38–40, 46–58, 61–63, 65, 66,

68–72, 76–83, 86–88, 93–100, 103–105, 108, 110, 112–

115, 117, 119, 122–127, 130, 132–138, 140–157], although

an inert atmosphere, such as argon, can be used [6, 11, 14,

32, 33, 43, 45, 60, 67, 74, 75, 90, 111, 121, 134, 158, 159].

On rare occasions, TLP bonding is performed under a

different atmosphere, such as nitrogen [44], hydrogen

[160], nitrogen and hydrogen [18], or open air [129]. The

vacuum pressures used in the experiments referenced

above are normally distributed about 0.1 lmHg (millitorr)with minimum and maximum values of 0.00015 and

34 lmHg, respectively.

TLP bonding kinetics

TLP bonding kinetics are generally divided into the fol-

lowing discrete stages [2, 8, 25, 56, 62, 86, 90, 99, 105,

138, 141, 157, 161, 162] for ease of comprehending and

modeling the process:

• melting of the interlayer• dissolution of the substrate material• isothermal solidification• homogenization of the bond region.

Figure 1 is a schematic of TLP bonding kinetics for a

binary system with complete solid solubility.1 The con-

centration profiles in the lower part of the figure are

numbered according to the current temperature of the bond,

which is shown in the phase diagram above them. The

following analysis assumes that (1) the interlayer and

substrate materials are pure elements (2) the bond region

has a uniform temperature as it is being heated (3) the

diffusion rates of liquid metals are infinite, and (4) the

substrate melts back and solidifies as a plane. The second

assumption is likely true since the interlayer is quite thin

and generally composed of metallic elements that charac-

teristically have moderate to high thermal conductivities.

The third assumption is based on liquid diffusivity data

often being orders of magnitude greater than solid diffu-

sivity data [163]. The fourth assumption is necessary to

characterize the process in one dimension.

Concentration profile 1 (CP1) in Fig. 1 shows the TLP

bonding setup at room temperature. The interlayer element

(i) is sandwiched between two pieces of the substrate

material element (s). The thickness of the bond region in

Table 1 Fixturing pressures used during TLP bonding

Nearest order Freq. (%) References

1 kPa 8 [89, 93, 98, 114–116]

10 kPa 5 [66, 117–119]

100 kPa 16 [23–25, 33, 61, 68, 72, 88, 90, 99, 113, 120]

1 MPa 36 [3, 21, 22, 26, 27, 29–31, 34, 65, 69–71, 73, 97, 102, 103, 121–128]

10 MPa 31 [17, 28, 32, 35, 59, 60, 62–64, 67, 74, 94–96, 100, 110, 111, 129–133]

100 MPa 4 [110, 112, 134]

1 A numerical model was developed to calculate one-dimensional

solid-state diffusion in conjunction with a liquid region that expands

or contracts, assuming infinite diffusivity for the liquid region. The

model also accounts for a heating period and diffusivity data as a

function of concentration and temperature. Diffusivity data along with

solidus and liquidus profiles for a hypothetical binary system were

used to output concentration profiles that were the basis for the

concentration profiles in Figs. 1, 3, 5, and 6.

5306 J Mater Sci (2011) 46:5305–5323

123

Fig. 1 has been exaggerated to display changes in the

concentration profile. The interlayer can be composed of a

single element, an alloy, or a multi-layer combination of

elements and/or alloys.

Interlayer thicknesses for TLP bonding are summarized

in Table 2. Besides the frequency of each range, common

thicknesses are also included for those ranges derived from

at least ten references. These common thicknesses com-

prise at least one-third of the specified range and include

plus or minus two percent to account for differences

between metric and English units (e.g., 0.004 inches equals

101.6 lm and should be categorized with 100 lm). Themost common interlayer thickness is 50 lm, comprisingalmost 90% of the 40–60 lm range, or about 20% of allreported TLP bond thicknesses.

As the bond assembly is heated, the interlayer begins to

diffuse into the substrate materials (CP2). The amount of

diffusion that occurs is dependent upon the interdiffusion

coefficient between the substrate and interlayer materials as

well as the heating rate.

Melting

Upon reaching the interlayer element’s melting point

(CP3), the pure portion of the interlayer liquefies (L).

Heating of the bond region continues until the bonding

temperature has been reached. The bonding temperature is

usually well above the interlayer’s melting point to ensure

complete melting of the interlayer and to increase the rate

of diffusion (see Optimal bonding temperature).

CP5a

CP4

CP5e

CP3

CP5d

CP2

CP5c

CP1

CP5b

is s

L

L

L

L

c4,Lc4,S

c5,Lc5,S

c5,S

c5,F

c5,P

c5,Lc5,S

bond region

ci0 100

T5

TR,P

TR,F

T4

T3

T2

T1

c5,Lc4,L

c5,Sc4,S

c5,Pc5,F

Fig. 1 A schematic binarysystem with complete solid

solubility and associated

concentration profiles. These

profiles illustrate the interlayer

element’s concentration during

the TLP bonding process

J Mater Sci (2011) 46:5305–5323 5307

123

Dissolution

During heating past the melting point, the concentrations of

the liquid region follow the solidus (c4,S) and liquidus (c4,L)

lines of the phase diagram (CP4). This causes the liquid

region to melt back, or dissolve, the substrate material to

conserve mass. The movement of the solid–liquid interface

continues until the bonding temperature has been reached

(CP5a); at this point the liquid has attained its maximum

width and has consumed some of the diffused solute. The

amount of melt-back is dependent upon the solidus (c5,S)

and liquidus (c5,L) compositions for the given material

system at the bonding temperature (see Optimal bonding

temperature). The main two effects that lower melt-back

distance are (1) significant diffusion of the interlayer

material into the substrate before melting (see Critical

interlayer thickness) and (2) loss of liquid due to wetting of

the substrate’s sides [44] or a high bonding pressure that

squeezes liquid out [22, 44, 62, 134, 165].

Many materials that are joined by TLP bonding have

carefully designed microstructures to achieve certain

mechanical properties. Too much melt-back of the sub-

strate by the liquid interlayer can have detrimental effects

on the final bond in addition to lengthening the isothermal

solidification time (see Critical interlayer thickness). And,

in some systems melt-back can reach five to fifteen times

the original interlayer thickness [43, 121, 146]. To prevent

drastic melt-back that can adversely affect the micro-

structure, the interlayer should be thin [57, 62], of a

eutectic composition [85], or of a composition similar to

the substrate material [19].

Solidification

After the liquid interlayer has reached its maximum width,

the interlayer material diffuses into the substrates at a rate

somewhere between the diffusivity of the liquid and solid

[25, 43, 85, 163]. As this diffusion occurs isothermally, the

liquid region contracts (CP5b) to conserve mass as the

solidus and liquidus concentrations are now fixed. Iso-

thermal solidification occurs until all of the liquid has

disappeared (CP5c). At this point, the TLP bonding process

can be stopped if desired [71]. The bond already has an

elevated remelting temperature (T5) compared to the

melting temperature of the interlayer (T3).

Homogenization

In most cases TLP bonding is continued in order to

homogenize the bond. This can be an extended time in the

same heating apparatus or a post-bond heat treatment

applied at some other time [14]. Furthermore, if the sub-

strate material’s microstructure is extremely sensitive, this

stage can be conducted at a lower temperature [2, 9]. In

either case, the bond undergoes homogenization for some

predetermined time which causes smoothing of the solute

peak (CP5d) that remained at the end of isothermal solid-

ification (CP5c). The resulting remelting temperature of the

bond in this case is TR,P. If the peak concentration (c5,P) is

within the room-temperature solid-solubility limit of the

binary system, the precipitation of strength-reducing

intermetallic compounds upon cooling will be avoided [12,

110, 147, 150, 160].

If the bond is homogenized for a sufficient amount of

time, there is no gradient in the concentration profile

(CP5e) and the bond’s remelting temperature is even

higher (TR,F). However, despite the increases in bond

remelting temperature that can be achieved by complete

homogenization, an adequate homogenization time is

usually determined by a sufficiently high bond strength [2,

24, 26, 42, 83, 103, 122, 123, 146, 150] or economic

considerations that limit furnace time [77, 125, 173].

Nonetheless, the bond’s remelting temperature is often

hundreds of degrees (�C) above the melting point of theinterlayer and can be about 1000 �C higher if refractorymetals such as Ir, Mo, Nb, Os, Re, Ta, or W are used as the

Table 2 Interlayer thicknesses for TLP bonding

Thickness

range (lm)Common

thickness(es) (lm)Freq.

(%)

References

\1 5 [35, 103, 130]1–5 1, 2 10 [20, 21, 35, 54, 62–64, 102, 105, 107, 108, 114, 118, 129, 130, 144, 164, 165]

10–30 20, 25 35 [5, 8, 10, 20–25, 34, 35, 39, 44, 48, 54, 59–63, 66, 68, 74–76, 78–80, 82, 87, 89, 105, 107,

110, 117, 118, 120–123, 126, 131, 134, 137, 141–143, 145–147, 150, 152, 155, 166–171]

40–60 50 24 [2, 5, 20, 26, 27, 32, 33, 36, 37, 40, 42, 46, 51, 52, 55–60, 64, 69–71, 77, 78, 81, 83, 84, 87,

88, 90, 101, 115, 119, 124–128, 135, 136, 145, 148, 149, 153, 155, 157, 166, 167, 172]

70–150 75, 100 18 [4, 5, 11, 14, 17, 18, 22, 29, 31, 38, 42–45, 49–51, 53, 78, 86, 87, 109, 125, 134, 135, 147,

151, 155, 159, 162]

200–500 200, 500 6 [6, 16, 55, 77, 95–97, 100, 104, 140, 158, 159, 162, 171]

[500 2 [65, 97]

5308 J Mater Sci (2011) 46:5305–5323

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substrate or if low melting-point metals such as Al, Ga, In,

Mg, Pb, Sb, Sn, or Zn are used as the interlayer.

Time frame of TLP bonding

The time frame of TLP bonding is highly dependent on the

material system (e.g., phase diagram particulars, diffusion

coefficients, grain size [18, 25, 142]) and the experimental

parameters (e.g., interlayer thickness, bonding pressure,

bonding temperature). The duration of each discrete stage

of TLP bonding lies within the following ranges:

• Heating to the bonding temperature, CP1–5a: less thana minute to about an hour; dependent on the method of

heating, the heating rate of the heating apparatus, and

the substrate material’s thermal properties

• Melting of the interlayer, CP3: less than a second [121,124, 138] to several seconds [19, 43, 77]

• Melting back of the substrate, CP3–5a: seconds [11, 71,73, 77, 124, 138, 161, 174] to minutes [7, 36, 37, 43,

71, 73, 85, 121]

• Isothermal solidification, CP5a–5c: minutes [7, 25, 36,37, 56, 74, 77, 95, 96, 105, 121, 125, 153] to hours [7,

11, 33, 36, 37, 43, 57, 58, 105, 146, 157, 175], although

it can occur in less than a minute [73, 161] or take more

than a day [12]

• Homogenization, CP5c–5e: hours [33, 43, 88, 109, 121]to days [88, 175] or, in a few cases, minutes [73].

The general trend is that initial melting of the interlayer

occurs an order of magnitude faster than melting back of

the substrate, which occurs an order of magnitude faster

than isothermal solidification, which occurs an order of

magnitude faster than complete homogenization. Isother-

mal solidification ends up being the limiting, or controlling,

time in producing a successful TLP bond [12, 36, 104, 125,

135, 138, 166, 167]. While the homogenization stage takes

longer if carried to completion, it rarely is. As previously

stated, homogenization can be performed during a sub-

sequent heat treatment or skipped in some cases; it can

even occur once the part is in service.

The foregoing explanation of TLP bonding kinetics also

applies to eutectic systems when the interlayer is a eutectic

composition alloy. The kinetics are slightly different (and

more importantly, TLP bonding takes much longer) for a

eutectic system when pure elements are used. (See refer-

ences [19, 44] for particulars of eutectic system kinetics).

Tuah-Poku et al. [43] reported a drastic decrease in time to

isothermally solidify by changing the interlayer: 200 h

when using the pure element as compared to 8 h when

using the eutectic composition. This occurs because (1) the

interlayer has to undergo a certain amount of solid-state

diffusion with the substrate at the bonding temperature

before any liquid appears and (2) melt-back of the substrate

is then greater.

Critical interlayer thickness

During initial heating, the interlayer element diffuses into

the substrates. The magnitude of diffusion depends upon

the specific material combination, but all solid-state dif-

fusion rates increase as the temperature rises. Depending

on the heating rate and the thickness of the interlayer, the

amount of diffusion can significantly decrease the inter-

layer’s width. In fact, for a combination of high diffusion

rate, slow heating, and/or thin interlayer, it is possible to

diffuse all of the interlayer material into the substrate

before reaching the interlayer melting point [114, 173],

although this is a rare occurrence. Because TLP bonding

requires the formation of a bulk liquid phase [9, 109, 114]

to create a consolidated, void-free bond while also

increasing diffusion rates, the interlayer must exceed a

minimum, or critical, thickness [105, 114].

In addition to the parameters listed above, the critical

interlayer thickness has been shown to depend on other

variables such as applied clamping force, solid/liquid sur-

face tension, surface roughness of the substrate, and

intermetallic formation [18, 94, 114]. In short, experiments

must be conducted for each material combination to

empirically reveal its critical interlayer thickness.

On the other hand, analytical models of TLP bonding

indicate that the isothermal solidification process time is

roughly proportional to the square of the interlayer thick-

ness [9, 18, 19, 25, 36, 44, 86, 104, 110, 114, 124, 138, 161,

173, 175, 176]; experimental data often corroborates this

trend [3, 26, 43, 44, 71, 86, 88, 153]. Therefore, to mini-

mize bonding time, an interlayer slightly thicker than the

critical thickness is ideal.

Optimal bonding temperature

The bonding temperature is sometimes completely limited

by the microstructural stability of the substrate material [7,

9, 87, 125]. If, however, the substrate material allows

flexibility in selecting an optimized bonding temperature, a

minimum isothermal solidification time (and therefore

bonding time) can be achieved at a certain temperature.

If phase diagram and diffusion data are available for the

material system in question, the isothermal solidification

time can be characterized with respect to temperature.

However, it is usually the case that experiments are the

only way to discover this relationship. In general, the

relationship is parabolic, yielding a minimum isothermal

solidification time at a given intermediate temperature

(between the melting points of the interlayer and substrate

materials) [9, 18, 43, 50, 78, 79, 159, 162]. And yet, in

J Mater Sci (2011) 46:5305–5323 5309

123

some cases the variables of the system yield either (1) a

monotonically increasing time, in which case the optimal

bonding temperature is just above the interlayer’s melting

point, [6, 9, 43, 114, 158, 162] or (2) a monotonically

decreasing time, in which case the optimal bonding tem-

perature is as high as the substrate material allows [4, 104,

114, 135, 141].

The behavior of this trend is highly system dependent

and results in part from the interplay of the diffusion rate

and the phase diagram of the system [19, 43, 50]. As the

temperature is increased, the rate of diffusion increases

exponentially. In addition, intermetallic regions, which

tend to slow down the rate of diffusion [60, 110], can often

be avoided by raising the temperature. As shown in Fig. 2,

Pb diffusing into Pd at 400 �C (T1) would pass through fiveintermetallic regions. T2 and T3 are ideal temperatures for

passing through just two and one intermetallic regions,

respectively. T4 completely avoids the intermetallic regions

while still providing a wide solubility range for the liquid

to solidify.

In addition to intermetallics, the shape of the solidus and

liquidus lines plays an important role in TLP bonding

kinetics and the optimal bonding temperature. Figure 3

demonstrates extremes of solidus and liquidus lines in a

binary system with complete solid solubility. The compo-

sition profiles below each set of phase diagrams demon-

strate the initial melting and isothermal solidification

behavior of the interlayer for each case. It is assumed that

all four systems (1) have the same diffusion coefficient and

(2) are heated instantaneously. The latter assumption is

accurate for many material systems since complete melt-

back often consumes much of the solute that has diffused

into the substrate (see CP5a in Fig. 1). The top concen-

tration profiles illustrate initial melt-back of a pure inter-

layer—the dotted line is the initial interlayer and the solid

line is the molten interlayer. The bottom concentration

profiles illustrate isothermal solidification for all four sys-

tems after a set time.

The partition coefficient (k) is included in the diagram

and is defined as:

k ¼ cScL

ð1Þ

where cS and cL are the solidus and liquidus compositions

of the interlayer element.

Systems a and b in Fig. 3 have the same convex-shaped

liquidus line and therefore experience the same amount of

melt-back (see the top concentration profiles). The same is

true for the concave-shaped liquidus line in systems c and

d. Systems a and c have the same partition coefficient (0.9).

The same is true for systems b and d (0.4).

A few principles of TLP bonding kinetics can be

gleaned from this figure. First, the convex-shaped liquidus

line (a and b) prevents melt-back from occurring to a large

extent, whereas the concave-shaped liquidus line (c and

d) causes much more melt-back. Second, isothermal

Fig. 2 Pb–Pd binary system[177] illustrating bonding

temperatures (dotted lines) thatavoid intermetallic regions

5310 J Mater Sci (2011) 46:5305–5323

123

solidification occurs faster in systems with a higher parti-

tion coefficient (a and c). To conserve mass, the volume of

solidified liquid is equal to the change in the concentration

profile of the solid region. The width of isothermal solid-

ification in an arbitrary time period is equal to the ratio of

this volume to the difference between the liquidus and

solidus compositions, or, written another way:

Vliq ¼ ðcL � cSÞwisoth:solidif: ð2Þ

Although systems a and c have the same partition coeffi-

cient, because the liquidus and solidus compositions of

system c are closer to zero, they are also closer to each

other, causing isothermal solidification to occur slightly

faster (see Fig. 3).

If the substrate material has a sensitive microstructure

that could be damaged by significant melt-back, then phase

diagrams such as systems c and d should be avoided.

Systems b and d will take much longer to isothermally

solidify, raising operating costs.

Systems a and c are quite similar in rate of isothermal

solidification. Because the solidus composition of system

c is closer to the completely homogenized composition

(shown as an x on the gray line), homogenization of the

solute peak after isothermal solidification will likely pro-

ceed more rapidly than in system a. However, because the

solidus line of system a has a convex shape, increases in

bond remelting temperature due to homogenization will

likely occur faster and be larger in this system.

Modeling of TLP bonding

Analytical models have been developed by many

researchers for the four stages of TLP bonding to provide

quick estimates or general trends, such as those illustrated

in the previous section. Equations for and descriptions of

TLP bonding analytical models are included in references

[8, 19, 162, 178]. Assumptions made for these models are

similar to those made in this article (see TLP bonding

kinetics). In some cases these equations provide good

results, but for many systems these simplified, binary-

system approaches do not supply accurate estimates [5, 8,

38, 78, 79, 86]. This is due in part to the diffusion coeffi-

cients being assumed independent of composition.

Some complexities of TLP bonding are quite difficult

to model. For example, grain boundaries can cause iso-

thermal solidification to occur at a different rate than that

predicted by analytical models using a bulk diffusion

coefficient [25, 36, 37]. Indeed, grain boundary diffusion

is faster than bulk diffusion in a certain temperature range

(based on the alloy’s melting point) [173]. Grain bound-

ary diffusion rates also increase as the substrate material’s

grain size decreases [179]. Further, grain boundaries can

be penetrated by the liquid to cause a non-planar solidi-

fication front, thereby increasing the area over which

diffusion occurs [5, 11, 18, 138]. See references [180,

181] for more information on the effect of grain bound-

aries in TLP bonding.

T

ci ci c i100 0 100 0 100 0 100 0c i

a b c

a cb d

a cb d

d

ka = = 0.983.793.0

kc = = 0.936.040.0

kd = = 0.416.040.0

kb = = 0.437.293.0

ci

c i

c L,a

cS,a c S,b c S,c

c L,cc S,d

c L,dc L,b

c L,ac S,a

cS,b

cL,b

cS,ccL,c

cS,d

cL,d

Fig. 3 Four binary systems (a–d) with complete solid solubility

and associated concentration

profiles. These profiles illustrate

the initial condition (dottedline), initial melt-back of thesubstrate, and resulting

concentrations after a set

amount of TLP bonding has

occurred in all four systems.

Partition coefficient values are

also shown for all four systems

at the given bonding

temperature

J Mater Sci (2011) 46:5305–5323 5311

123

Another interesting deviation is that isothermal solidi-

fication can occur in two different ‘‘regimes’’ [38, 50, 138].

The faster solute element of a multi-component interlayer

controls the rate of solidification for the first regime. Then,

a second solute element controls the rate of solidification

during the second regime, resulting in complex concen-

tration–time profiles.

Numerical models can account for some of the com-

plexities of TLP bonding to accurately predict bonding

kinetics [7, 8, 161, 162, 168, 173, 176, 179, 182, 183] and

can even be extended to multi-component systems [174,

184]. Despite the complexities and extra time required in

numerical modeling, especially for multi-component sys-

tems, the limiting factor is most often the lack of necessary

diffusion data [7, 8, 178]. But, when the necessary data is

available, modeling of TLP bonding can drastically reduce

the number of experiments required to determine optimal

bonding parameters [37, 162, 166].

Advantages and disadvantages of TLP bonding

The most distinctive advantage of TLP bonding is that the

resulting bond can operate at the bonding temperature or

higher temperatures. In other words, materials can be

bonded at a temperature equal to or lower than what the

assembled part will experience in service. This is espe-

cially important for temperature-sensitive materials whose

microstructures can be damaged by too much thermal

energy input [117] and therefore need to be joined at lower

temperatures.

Another advantage is that the resulting TLP bonds often

have microstructural, and therefore mechanical, properties

similar to the properties of the base materials [7, 12–14, 24,

32, 42, 49, 61, 62, 75, 77, 81, 95, 105, 109, 115, 119, 123,

141, 149, 153, 166, 175]. In fact, in some cases the bond

area becomes indistinguishable from other grain bound-

aries [18, 35, 37, 68, 108, 109, 130, 185] due to significant

diffusion at high temperature. Such bonds are often as

strong as the bulk substrate material [14, 164], or stronger,

causing the joined assembly to fail in the substrate material

rather than in the bond [14, 31, 71, 76].

Advantages of TLP bonding include:

• the process is highly tolerant to the presence of a fayingsurface oxide layer [2, 6, 7, 11, 13, 21, 42, 47, 48, 56,

67, 80, 93, 136, 147–149, 186] and therefore requires

less joint preparation and no fluxing agents [11, 18, 42,

173, 187]; in a few rare cases surface oxides are

actually beneficial to the process [129]

• fixturing pressures are much lower than those used inother joining processes like diffusion bonding [11, 14,

19, 24, 25, 33, 37, 42, 43, 49, 62, 68, 78, 136, 145–149]

• little melting of the substrate material occurs, ascompared to fusion welding processes [42, 64]

• many joints can be fabricated in one pass [11, 147]• the liquid formed during TLP bonding fills voids on

uneven mating surfaces, making costly finishing pro-

cesses unnecessary [2, 14, 18, 19, 33, 49, 161]

• overaging of temperature-sensitive materials can beavoided [80, 140, 186, 188].

For some material systems, bond properties and per-

formance capabilities that are difficult or impractical to

achieve using conventional joining methods are more

accessible [189].

However, TLP bonding is a specialized bonding tech-

nique that can be time-consuming and expensive compared

to other joining methods—the time required for isothermal

solidification and sufficient bond homogenization can be

unfeasibly long and/or uneconomical [36, 37, 104, 141].

TLP bonding is not always suitable, specifically in the

following cases:

• significant melt-back of a material with a specificallydesigned microstructure [7, 62, 141]

• the formation of a thick layer of intermetallic com-pounds in the bond that tend to lower its strength and

ductility [9, 36, 87, 110, 141, 146, 157, 158, 167]

• the segregation of particles in metal matrix compositesat the joint centerline, leaving a distinct weakened band

in the joint microstructure [19, 33, 39, 42, 54, 105].

See reference [7] for examples of specific difficulties

that occur in TLP bonding applications. Although many

disadvantages of TLP bonding can be overcome by opti-

mized bonding parameters, the optimization process often

requires much experimentation.

Applications of TLP bonding

Since TLP bonding was developed, it has successfully been

applied to join a broad range of materials and structures

including the following:

• Al-, Co-, Fe-, Ni-, and Ti-based alloys [7, 10, 11, 24,43, 47, 54, 65, 85, 109, 154, 173, 190, 191]

• Cellular structures [15, 91]• Ceramics [114, 173]• Metal matrix composites [7, 54, 93, 114, 173]• Microcircuitry components [102, 104, 152, 157, 173,

192, 193]

• Oxide-dispersion-strengthened alloys [7, 24, 65, 125,126]

• Single crystals [3, 65]• Stainless steels [25, 47, 54, 85, 190]• Structural intermetallics [7, 12, 47, 51, 83, 85].

5312 J Mater Sci (2011) 46:5305–5323

123

TLP bonding is often used in high-stress, high-temper-

ature applications where brazing, welding, and diffusion

brazing cannot be used for various reasons (e.g., low

melting temperature bond, insufficient resulting mechani-

cal properties, unacceptable plastic deformation) [4, 11, 12,

14, 19, 44, 49–51, 69, 85, 86, 92, 119, 130, 136, 141, 146,

149, 164, 186]. Specific applications are the repair of Ni-

based superalloy turbine blade components [7, 9, 39, 74,

104, 105, 135, 142] and the joining of heat-resistant alloys

that are inherently susceptible to hot cracking or post-weld

heat treatment cracking [5, 11, 20, 38, 59, 78, 80, 135, 136,

140, 173]. Table 3 presents a spectrum of TLP bonds as of

now, including bonds of dissimilar materials.

Variants of TLP bonding

A few variants of TLP bonding also exist:

• Temperature gradient TLP bonding: the application ofa temperature gradient causes a non-planar bond

interface which tends to result in stronger bonds [8,

21, 164, 186, 194]

• Wide-gap TLP bonding: gaps of 100–500 lm can bebonded or repaired by the use of a melting and a non-

melting constituent (multiple layers or mixed powders)

[7, 16, 57, 92, 94–96, 100, 101, 136, 149, 173, 195]. This

technique can also be used in conventional TLP bonding

to accelerate isothermal solidification [13, 99, 140]

• Active TLP bonding: a ceramic and metal can be joinedby a multi-component interlayer; at least one constit-

uent reacts with the ceramic while another diffuses into

the metal to cause isothermal solidification [28, 42, 52,

54, 116, 132, 196]

• Partial TLP bonding (see next section).

Bonds made using temperature gradient, wide-gap, and

active TLP bonding have been included in Table 3.

Partial transient liquid phase (PTLP) bonding

Partial transient liquid phase (PTLP) bonding is a variant of

TLP bonding mainly used to join ceramics. PTLP bonding

overlaps both wide-gap and active TLP bonding, although

articles defining PTLP bonding predate the other two

techniques by a few years. Many advantages of conven-

tional TLP bonding carry over to PTLP bonding [188]. The

ensuing sections focus on how PTLP bonding differs from

TLP bonding.

PTLP bonding process

In PTLP bonding, the interlayer consists of thin layers of

low-melting-point metals or alloys on each side of a much

thicker refractory metal or alloy layer [188, 200–203].

Figure 4 presents a general, three-layer PTLP bond setup.

(In some cases, there can be multiple thin layers on each

side of the refractory core (see Table 4), but the general

principles of the process remain the same.) Upon heating to

the bonding temperature, a liquid is formed (through

melting or a eutectic reaction with the refractory core

[202–206]) by each thin layer. The liquid that is formed

wets each ceramic substrate while concomitantly diffusing

into the solid refractory core. As in TLP bonding, the liquid

regions solidify isothermally and homogenization of the

entire bond region leads to a refractory bond.

The refractory core tends to be a foil that is 20–30 lm[143, 207–214] or 100–127 lm thick [116, 188, 189, 201,207, 211–213, 215–222], although it can be in the

200–1000 lm range [202–205, 208, 223–225]. Therefractory core element is often Ni [144, 189, 196, 201–

204, 207–210, 218, 224, 226, 227]; other elements (and an

alloy) that have been used include Au, Co, Cu, Nb, Ni–Cr,

Pd, Pt, Si, Ta, Ti, and V [117, 188, 189, 200–202, 205–208,

214–218, 222, 227–229]. The thin layers can be most of the

formats used for TLP bonding interlayers (see TLP bond-

ing process) and are often in the 1–10 lm thick range. Theratio of the thin layer thickness over the refractory core

thickness is usually 1–5% [143, 188, 189, 201–204, 207,

208, 211–213, 215–218, 220, 222–225, 230, 231], although

it can be 6–20% [207, 210–213, 219, 221, 223], and some

PTLP bond experiments have utilized a ratio of 50% or

higher [116, 144, 208, 214, 226].

PTLP bonding kinetics

Figures 5 and 6 depict the two ends of the PTLP bonding

process. The following additional assumptions are made in

this analysis: (1) thin layer A (tlA), the refractory core (rc),

and thin layer B (tlB) are different pure elements (2) there

is no diffusion into the ceramic substrates (3) the ternary

system (tlA–rc–tlB) can be approximated by the two

associated binary systems (tlA–rc and rc–tlB), and (4) the

interlayers wet the substrate with a thin layer of interme-

tallic formation that conserves the amount of liquid and

results in a refractory intermetallic.

The second and fourth assumptions highlight the major

differences between TLP and PTLP bonding. First, the

multi-layer interlayer used during PTLP bonding has been

termed ‘‘self-contained’’ [215] because the liquid phases

must diffuse into the rc, rather than the much larger sub-

strate materials, to induce isothermal solidification. Sec-

ond, the liquid phases must wet the ceramic substrates to

create a strong bond. This tends to be difficult due to the

chemical inertness of ceramics [117, 180, 196, 216] and

usually requires the use of active elements such as Al, Cr,

Hf, Nb, Ni, Sc, Ta, Ti, V, or Zr [65, 117, 187, 189, 198,

J Mater Sci (2011) 46:5305–5323 5313

123

Table 3 A spectrum of materials joined by TLP bonding

Substratea Interlayer(s)b Reference(s)

Ni-based alloys

GTD-111 MBF-30, MBF-50 [3, 68, 79, 82]

Inconel 600 NB 150 [135]

Inconel 617 BNi-3, BNi-6 [147, 156]

Inconel 625 BNi-2 [104]

Inconel 713C BNi-6 [88]

Inconel 718 BNi-2 [104]

Inconel 738 NB 30, NB 150, BNi-3, MBF-60, MBF-80,

DF-3

[5, 38, 45, 66, 78, 80, 86,

87, 159, 162, 178]

Inconel MA758 Ni–B, Ni–Cr–Si–Fe–B, MBF-80 [24, 108, 125, 141]

Inconel MA760 Ni–Cr–P, Ni–Cr–Si–Fe–B [64]

Inconel 939 F20, F24, F25, F26, F27, MBF-80 [59]

Mar-M247 F20, F24, F25, F26, F27, MBF-80 [59]

Nimonic 80A Ni|NB 125|Ni [109]

René N5 Ni–Ge, Ni–Mn, Ni–Mn–Si, D-15 [6, 16, 158]

Udimet 700 Ni–Cr–Co–Mo–B [14]

Waspaloy NB 150 [38, 50, 178]

Ni–6.4Al Ni–B [157]

Ni–15Cr–11.5Al–3 W–0.2Hf–0.1Si–0.1Mn (c/c0/b type) MBF-80, Ni–Cr–B–Ce (variouscombinations)

[65]

Al-based alloys

Al A356.0 Cu [107]

Al 5052 Ag–Cu [127]

Al 6060 Al–Cu, Al–Si–Cu [165]

Al 6061 Ag, Al–Si, BAg-8 [17, 27]

Al 6082 Cu, Ga [21, 129, 164]

Al 7475 Zn [30]

Al–7.5Si Cu [107]

Fe-based alloys

304 SSc Ni–Cr, 304L SSc, BNi-2 [77, 99]

304L SSc NB 51 [91]

Duplex SSc Cu, Fe–B–Si, Ni–Si–B, MBF-20, MBF-30,

MBF-35, MBF-50, MBF-80

[25, 47, 61, 76, 153, 169]

Carbon steel Cu, Fe–B [36, 37, 74]

Fe–Ni–Cr Ni–B–Cr–Si (various combinations) [133]

Incoloy MA956 B, Fe–B–Si [35, 63, 65, 130]

Incoloy MA957 Fe–B–Si, BNi-1a, BNi-3 [62, 63, 126]

Low carbon steel Fe–B–Si, BNi-2 [67, 75]

ODSc steel (Fe–Cr–W–Y2O3–Ti) Fe–Si–B [131]

PM2000 (Fe–Cr–Al) B, Fe–B–Si [35, 63, 130]

T91 steel Fe–B–Si, Fe–Ni–Cr–Si–B, BNi-2 [60]

Ti-based alloys

OT4 Cu–Ti, Ni–Ti, Ti–Cu–Zr [97, 134]

VT1 Cu [46]

Ti–6Al–4 V Cu [34]

Ti–22Al–25Nb (a) Ti–Cu–Ni [83]

Miscellaneous alloys

AZ31 (Mg–Al–Zn) Al, Cu [121, 150]

K640 (Co–Cr–Mo) Co–Ni–Cr–W–B–Si [2]

5314 J Mater Sci (2011) 46:5305–5323

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Table 3 continued

Substratea Interlayer(s)b Reference(s)

Co alloy (unspecified) Ni–Cr–B [10]

Cu (ODSc) Cu | Sn | Cu [110, 151]

Cu–Cr–Zr Cu | Sn | Cu [110]

Sn–Ag Sn–Bi, Bi–Sn (various combinations) [106]

Single crystals

Ni Ni–P [142]

CMSX–2 F24, MBF-80 [26, 70, 71]

CMSX–4 D-15, MBF-80 [9, 26]

IC 6 (with and without B) MBF-80 [53]

PWA 1483 (Ni–Cr–Co–Ta–Ti–W–Al–Mo) Ni–Ge [6, 158]

Intermetallics

Ni–45Ti–6Cu Cu [32]

NiAl Ni (glaze), BNi-3 [84, 113]

Ti–42Al–2Cr Ti | Cu, Ti | Ni, Ti | Fe [51]

Ti–45Al–2Nb–2Mn (a) ? 0.8 vol.% TiB2 Ti–Cu–Ni, Cu–Ni | Ti | Cu–Ni [20]

c-TiAl [Ti–47Al–2Cr–2Nb (a)] Tini 67 [40]

Ti–48Al–2Cr–2Nb (a) Cu, Cu & Ti–Al–Cr–Nb, Cu & TiAl [94, 96, 100, 197]

Gamma Met PX Cu & Gamma Met [95]

Pure metals

Ag Cu, Ag–Cu [8, 43, 44]

Al Ag, Cu, Ga, Al–Cu, Al–Si–Cu [22, 129, 148, 164, 165,

186]

Au Au–Sn, Sn, In, Ti | In [102, 152, 198]

Cu Ag, Sn, Ag–Cu, BiIn, BiIn2, BiSn, InSn, NB

51

[15, 18, 44, 114, 139, 160,

187, 192, 198]

Fe Sb, Fe–P, Fe–B [137, 140]

Nb Ti, Zr, V [155]

Ni B, Cu, Hf, BNi-3, BNi-6, MBF-60, MBF-80 [4, 81, 88, 117, 138, 162,

167, 168]

Sn Bi [103]

Metal matrix compositesd

Al/Al2O3 Ag, Cu, Al–Cu, Cu–Ti [22, 42]

Al/SiC Cu, Ni [144]

Al 2124/SiC Ni [48]

Al 2618/SiC Al–Ag–Cu, Al–Ag–Cu–Ti [93, 98]

Al 6061/Al2O3 Cu [39, 105, 145, 146]

Al 6061/SiC Cu [33, 90]

AZ91D (Mg–Al)/TiC Al, Cu [122, 123]

Haynes 230/Al2O3 Haynes 230 doped with B [85]

Ti–6Al–4 V/SiC Cu–Ti–Zr [73]

Ceramics

Al2O3 Al, Al & SiO2, B2O3 [118, 143, 170, 199]

SiC Ge [171]

Si3N4 Oxynitride glass [185]

TiO2 Bi2O3 [89]

Dissimilar metals

Al 7075 Ti–6Al–4 V Cu [23]

Astroloy Mar-M247 (directionally solidified) BNi-3 [124]

AZ31 (Mg–Al–Zn) 316L SSc Ni [120]

J Mater Sci (2011) 46:5305–5323 5315

123

200–202, 206, 215, 216, 218, 222, 228, 232, 233]. Also,

when analyzing the critical interlayer thickness of the thin

layers, a portion of the liquid that forms from those thin

layers will react with the ceramic substrate and add to the

critical thickness.

The PTLP bonding setup at room temperature is shown

in Figs. 5 and 6 as concentration profiles 1A and 1B, CP1Aand CP1B, respectively. Both binary systems exhibit

complete solid solubility. As the temperature of the bond is

raised to the melting points of each thin layer (T4 for tlA

Table 3 continued

Substratea Interlayer(s)b Reference(s)

Be Cu–Cr–Zr and Cu (ODSc) Cu | Sn | Cu [110]

Cu Cu–W composite Al [31]

Cu Steel BAg-8 [160]

Cu 304 SSc Ag [10]

Cu 304L SSc Ag [109]

Br.Kh. (Cu–Cr) 12Kh18N10T (Fe–Cr–Ni) Cu–Mn|Ni, Cu–Ag|Ni [111]

CMSX-4 Inconel 738 and 939 BNi-3, Niflex-110, Niflex-115 [136, 149]

DD98 (Ni–W–Co–

Mo–Ti–Al–Ta–Hf)

M963 (Ni–W–Co single crystal) Ni–Cr–B [128]

Inconel 718 Inconel X-750 BNi-2 [11]

Mar-M247 NiAl Cu [12, 55, 57, 58]

Mar-M247 NiAl-Hf (single crystal) Cu, NiAl & Cu, Ni3Al & Cu [55–57, 92, 101]

Ni NiAl Cu, BNi-3 [12, 55, 57, 58, 69, 115]

Low carbon steel Ti Cu–Mn–Ni [49]

SSc 321 Zircaloy-4 (Zr–Sn) Ti–Zr–Cu–Ni [172]

Steel 304L SSc Cu [160]

TS7 (Ti alloy) 5VMTs (Nb alloy) with W, Mo, & Zr; and

TV10 (Ta alloy) with W

Cu–Ni [112]

Ti–42Al–2Cr Ti 6242 Ti|Cu, Cu|Ti [29]

Ti–6Al–4 V Ti–45Al–2Nb–2Mn (a) ? 0.8 vol.% TiB2 Cu–Ni, Ti–Cu–Ni [20]

Metals to Metal matrix compositesd

Al 6082 Al 359/SiC Cu [21]

Ti–6Al–4 V Ti–6Al–4 V/SiC Cu–Ti–Zr [73]

Metals to Ceramics

Kovar (Fe–Ni–Co) SiC Ni–Si | Mo [116]

ODSc Fe alloy (Fe–Cr–

Al–Y2O3)

Si3N4 Fe–B–Si [72]

W18Cr4 V tool steel TiC–Al2O3 composite Cu|Ti [28]

Inconel 718 Si3N4 Ni|Cu|Ti [196]

Ni Ti(C,N) (50%TiC & 50%TiN) Cu|Nb [132]

Ti AlN Ag–Cu [52]

Metal matrix compositesd to ceramics

Al 6061/Al2O3 Al2O3 Cu [39, 54]

a Substrate material compositions are in weight percent, unless specified by an (a) for atomic percentb Interlayer material compositions are notated as either (1) X–Y–Z where X is the base element and Y and Z are alloying elements of at least one

weight percent in order of descending composition or (2) one of the following braze alloy designations in weight percent: BAg-8 (Ag–28Cu),

D-15 (Ni–15.3Cr–10.3Co–3.5Ta–3.5Al–2.3B), DF-3 (Ni–20Co–20Cr–3B–3Ta), F20 (Ni–21.6Cr–17.6Co–3.1 W–2.8Al–2.2B–1.3Ta), F24

(Ni–10.8Co–8.8Cr–3.9 W–3Al–3Ta–2.5B), F25 (Ni–9.8Co–8.6Cr–8.2 W–2.4B), F26 (Ni–9.2Co–8.6Cr–4.9Al–3.6B–2.7Ta), F27 (Ni–9.8Co–

7.5Cr–3.3B–1.9 W), BNi-1a (Ni–14Cr–4.5Fe–4.5Si–3B), MBF-20 or BNi-2 (Ni–7Cr–4.5Si–3.2B–3Fe), MBF-30 or BNi-3 (Ni–4.5Si–3.2B),

MBF-35 (Ni–7.3Si–2.2B), MBF-50 (Ni–19Cr–7.3Si–1.5B), MBF-60 or BNi-6 (Ni–11P), MBF-80 (Ni–15.2Cr–4B), NB 30 (Ni–19Cr–10Si),

NB 51 (Ni–25Cr–10P), NB 125 (Ni–14Cr–4.5Fe–4.5Si–3.13B), NB 150 (Ni–15Cr–3.5B), Niflex-110 and Niflex-115 (proprietary), Ticu-

sil (Ag–26.7Cu–4.5Ti), Tini 67 (Ti–33Ni)c ODS oxide dispersion-strengthened, SS stainless steeld Metal matrix composites are notated as X/Y where X is the matrix material and Y is the composite fiber material

5316 J Mater Sci (2011) 46:5305–5323

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and T3 for tlB), both thin layers diffuse into the rc (see

CP2A and CP3A as well as CP2B). Despite the small

amount of liquid that initially forms from tlB due to its high

diffusivity (CP3B), the liquid drastically melts back the rc

on further heating (CP4B) due to the concave shape of the

liquidus. This melt-back continues until the assembly is

heated to the bonding temperature (T5) shown in CP5aB.

On the other hand, the liquid formed from tlA (CP4A)

widens slightly to be about the same width as the original

thin layer (CP5aA) due to that system’s convex liquidus.

At this point, isothermal solidification occurs on both

sides of the multi-layer interlayer. It proceeds much faster

for tlB due to its high partition coefficient and diffusivity.

In fact, isothermal solidification is complete for tlB(CP5bB) when the other liquid region has only solidified

about halfway (CP5bA), despite the considerable melt-back

of the rc.

The liquid formed from tlA eventually solidifies iso-

thermally (CP5cA). On the other side of the bond, the

solute peak has been smoothed due to homogenization

(CP5cB), and the remelting temperature on that side has

increased to TR,P.

Further homogenization causes the remaining gradient

in the tlB element to disappear (CP5dB), thereby raising the

thinlayer

A

substrateA

substrateB

refractorycore

thinlayer

B

Fig. 4 A general PTLP bonding setup

Table 4 A spectrum of materials joined by PTLP bonding

Substrate Interlayera Combination(s) Reference(s)

Ceramics

Al2O3 Cr | Cu | Ni | Cu | Cr, Cu | Nb | Cu, Cu | Ni | Cu, Cu | Ni–Cr | Cu,

Cu | Pt | Cu, In | Ag ABAc | In, In | Cusil ABAc | In,

In | Incusil ABAc | In, Ni | Nb | Ni, Ti | Al | Ti

[143, 188, 189, 201, 207, 211–213,

215, 216, 218, 220–222, 230, 232]

Glass Au | InBi | Au [139]

Si3N4 Al | Ti | Al, Au | Ni–Cr | Au, Cu–Au | Ni | Cu–Au, Co | Nb | Co,

Co | Ta | Co, Co | Ti | Co, Co | V | Co, Cu–Au–Ti | Ni | Cu–Au–Ti,

Cu–Ti | Pd | Cu–Ti, Ni | Ti | Ni | Ti | Ni, Ni | V | Ni,

Ti | Au | Cu | Au | Ni | Au | Cu | Au | Ti, Ti | Cu | Ti,

Ti | Cu | Ni | Cu | Ti, Ti | Ni | Ti, Ti | Ni | 304SSc | Ni | Ti,

Ti | Ni | Kovarc | Ni | Ti, V | Co | V

[117, 202, 206–208, 210–212, 214,

217, 223, 224]

SiC C | Si | C, Cu–Au–Ti | Ni | Cu–Au–Ti, Ni–Si | Mo | Ni–Si,

Ti | Au | Cu | Au | Ni | Au | Cu | Au | Ti

[116, 210, 212, 213, 227]

WC Zn | Pd | Zn [219]

Y2O3-stabilized ZrO2 Al | Ni | Al, Ni | Nb | Ni [216, 231]

ZrO2-toughened Al2O3 Ni | Nb | Ni [216]

Compositesb

Al / SiC Cu | Ni | Cu [144]

Si3N4 / TiC Ti | Ni | Ti [203]

Al 6061 / Al2O3 Cu | Ni | Cu [209]

C / C Ti | Ni | Ti [226]

Metals to ceramics

FA-129 (Fe3Al

alloy, Fe–Al–Cr–

Nb)

Si3N4 Cu–Ti (ABAc) | Cu | Cu–Ti (ABAc), Cu–Ti | Cu | Ni | Al [202, 204, 205]

Kovarc Al2O3 Ni | Ti | Ni [200]

Ni Si3N4 Ti | Ni | Ti [225]

Si Al2O3 Ti | Cu | Sn | Au | Cu [229]

a Interlayer material compositions are notated as either (1) X–Y where X is the base element and Y is the minor alloying element or (2) one of

the following braze alloy designations, in weight percent: Cusil (Ag–28Cu), Incusil (Ag–27.3Cu–12.5In–1.3Ti), and Ticusil (Ag–26.7Cu–4.5Ti)b Composites are notated as X/Y where X is the matrix material and Y is the composite fiber materialc ABA active brazing alloy, Kovar Fe–Ni–Co alloy, SS stainless steel

J Mater Sci (2011) 46:5305–5323 5317

123

remelting temperature of the bond next to substrate B to its

final value, TR,F. A similar melting temperature increase (to

TR,P1) simultaneously occurs on the other side of the bond

due to smoothing of its solute peak (CP5dA).

Prolonging the homogenization process continues to

raise the remelting temperature of the left side of the bond.

However, once its remelting temperature has reached TR,P2(CP5eA), which is higher than TR,F for the right side of the

bond, further homogenization will have little effect on

raising the bond’s remelting temperature. From an opti-

mization standpoint, homogenization should be stopped at

this time. However, real-world considerations usually

determine the homogenization time, which can be less

than—or greater than—the optimized time due to various

factors, such as cost, microstructural considerations, or

resulting bond strength.

The time frame of PTLP bonding is very similar to that

of TLP bonding. Isothermal solidification and homogeni-

zation times for TLP bonding depend on high-diffusivity

elements diffusing into ‘‘infinite’’ substrate materials. In

PTLP bonding, the elements tend to have lower diffusivi-

ties, but the maximum diffusion path is on the order of

100 lm, resulting in similar bonding times.

Advantages and disadvantages of PTLP bonding

The ‘‘self-contained’’ [215] nature of the PTLP bonding

multi-layer interlayer provides benefits and impediments.

Specific advantages include the following:

• the dual nature of the multi-layer interlayer combinessome beneficial properties of brazing and diffusion

CP5a

CP4 CP5e

CP3

CP2 CP5c

CP1 CP5brc

L

L

L

c5,Lc5,S

c5,S

c5,F

c5,P1

c5,P2

bond region

100 0

T5

TR,P2TR,F

T4

T3

T2

T1

c5,L c5,Sc5,P2c5,P1 c5,F

CP5f

TR,P1

c tlA

s A tlAA A

A

CP5dA

A

A

A

A

A

A

c5,Lc5,S

Fig. 5 A schematic binarysystem with complete solid

solubility and associated

concentration profiles for one

half of the PTLP bonding

process (thin layer A [tlA] and

refractory core). These profiles

illustrate the thin layer A

element’s concentration during

the PTLP bonding process,

starting with the initial

condition (CP1A) and ending

with the completely

homogenized bond (CP5fA)

5318 J Mater Sci (2011) 46:5305–5323

123

bonding [117, 188, 204, 206, 208, 215] and provides

some flexibility in joint design

• lower bonding temperatures can mitigate thermallyinduced stresses [188, 214] and limit or avoid delete-

rious intermetallic reactions [188, 207]

• because diffusion occurs on a smaller scale (on theorder of 100 lm), bonding using slow-diffusing ele-ments occurs in a reasonable amount of time.

Major disadvantages are:

• the liquid interlayer must wet the ceramic [117, 143,215]

• matching the thermal expansion coefficients of theceramic substrates and metallic interlayer elements is

sometimes necessary to prevent thermally induced

stresses and cracking [117, 143, 188, 196, 203, 215]

• intermetallic formation is necessary, but a thick reac-tion layer tends to be brittle and can degrade joint

strength [143, 200, 202, 203, 210, 215].

However, most disadvantages of PTLP bonding can be

overcome by proper design. In the end, the limiting factor

is wettability on the specific ceramic material.

Applications of PTLP bonding

PTLP bonding has been used to successfully join some

ceramic and composite materials. Table 4 presents a

spectrum of PTLP bonds as of now, including bonds of

dissimilar materials. The interlayer combination of the

general PTLP bond setup shown in Fig. 4 would be notated

tlA | rc | tlB.

CP5a

CP4 CP5e

CP3 CP5d

CP2 CP5c

CP1 CP5brc s

L

L

L

c4,Lc4,S

c5,Lc5,S

c5,F

c5,F

c5,F

c5,P

c5,S

bond region

0 100

T5

TR,PTR,F

T4

T3

T2

T1

c5,Lc4,L

c5,Sc4,Sc5,Pc5,F

CP5f

ctlB

tlB BB B

B

B

B

B

B

B

B

B

Fig. 6 A schematic binarysystem with complete solid

solubility and associated

concentration profiles for one

half of the PTLP bonding

process (refractory core and thin

layer B [tlB]). These profiles

illustrate the thin layer B

element’s concentration during

the PTLP bonding process,

starting with the initial

condition (CP1B) and ending

with the completely

homogenized bond (CP5fB)

J Mater Sci (2011) 46:5305–5323 5319

123

Summary

TLP bonding is a relatively new bonding process that

results in a bond with a higher melting temperature than

that used to join the materials. Specific details of this

process, including experimental details, process kinetics,

and optimal bonding temperature, have been outlined in

this article. Also, the broad range of materials that have

been joined by TLP bonding was presented.

PTLP bonding, a more recent variant of TLP bonding

used to bond hard-to-join materials, was also outlined.

PTLP bonding has been successful in joining a smaller

range of materials, most notably, ceramics.

Both TLP and PTLP bonding are specialized joining

processes that require more resources to implement com-

pared to typical bonding processes. However, in some

cases these bonding processes are the best—or only—way

to join materials for specialized applications.

Acknowledgements This study was funded by the Office of NavalResearch under grant number N00014-07-1-0872, Dr. William Mul-

lins, Program Officer.

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http://dx.doi.org/10.1007/BF00357335

Overview of transient liquid phase and partial transient liquid phase bondingAbstractTransient liquid phase (TLP) bondingTLP bonding processTLP bonding kineticsMeltingDissolutionSolidificationHomogenization

Time frame of TLP bondingCritical interlayer thicknessOptimal bonding temperatureModeling of TLP bondingAdvantages and disadvantages of TLP bondingApplications of TLP bondingVariants of TLP bonding

Partial transient liquid phase (PTLP) bondingPTLP bonding processPTLP bonding kineticsAdvantages and disadvantages of PTLP bondingApplications of PTLP bonding

SummaryAcknowledgementsReferences

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