p. fernández-martínez – optimized lgad peripheryresmdd14, firenze 8-10 october 20141 centro...

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P. Fernández-Martínez – Optimized LGAD PeripheryRESMDD14, Firenze 8-10 October Centro Nacional de MicroelectrónicaInstituto de Microelectrónica de Barcelona Critical aspects of the LGAD design Electric 400 V  Two regions  different junctions: Central area  uniform electric field, high enough to activate mechanism of impact ionization (multiplication) Termination N+N+ P π  High electric field confined in the central region  3rd Region Periphery  Reduction of the leakage currents

11th Ntrca Circulation 20141

P. Fernández-Martínez – Optimized LGAD Periphery25 th RD50 Workshop, CERN 19-21 Nov. 20141 Centro Nacional de MicroelectrónicaInstituto de Microelectrónica

eBook LOWD 20141

20141 - img1.wsimg.com

Boletin Anual 20141

LGAD skrajute - psihanaliza-de-familie.com · Title: LGAD skrajute.cdr Created Date: 8/9/2011 10:01:51 PM

LGAD design for harsh radiation environment using TCAD ...€¦ · LGAD design for harsh radiation environment using TCAD simulations Geetika Jain, , Ranjeet Dalal, Ashutosh Bhardwaj*,

Portfolio of LGAD

1 Nicolo Cartiglia, INFN, Torino - RD50 - Santander, 2015 Timing performance of LGAD-UFSD 1.New results from the last CNM LGAD runs 2.A proposal for LGAD

LGAD skrajute - psihanaliza-de-familie.com fileTitle: LGAD skrajute.cdr Created Date: 8/9/2011 10:01:51 PM

Events 20141

Latest measurements of LGAD diodes f abricated at IMB-CNM