N-Channel Enhancement Mode Field Effect Transistor

CEP50N06/CEB50N06

FEATURES

60V, 50A ,RDS(ON) = 22mΩ (typ) @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

TO-220 & TO-263 package.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter Symbol Limit UnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C- Derate above 25 C

VDS

VGS

ID

PD

IDM

60

0.8813115050

±20V

WAAV

W/ C

1

S

G

D

GS S

D

DG

CEB SERIESTO-263(DD-PAK)

CEP SERIESTO-220

Lead free product is acquired.

http://www.cetsemi.comRev 4. 2009.Nov

Specification and data are subject to change without notice .

Operating and Store Temperature Range

Single Pulsed Avalanche Energy d

Single Pulsed Avalanche Current dEAS

TJ,Tstg

IAS

-55 to 175

50225

AmJ

C

Thermal Characteristics

Thermal Resistance, Junction-to-CaseThermal Resistance, Junction-to-Ambient

Parameter Symbol Limit Units

W/ CW/ C

62.51.14RθJC

RθJA

CEP50N06/CEB50N06Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Min UnitsOff CharacteristicsDrain-Source Breakdown VoltageZero Gate Voltage Drain CurrentGate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold VoltageStatic Drain-SourceOn-Resistance

BVDSS

IDSS

IGSSR

IGSSF

22

2 4

-1001001

mΩ

V

nAnAµAV

S

2

Gate Body Leakage Current, ReverseOn Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer CapacitanceOutput Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall TimeTurn-Off Delay TimeTurn-On Rise Time

Total Gate ChargeGate-Source ChargeGate-Drain ChargeDrain-Source Diode Characteristics and Maximun RatingsDrain-Source Diode Forward CurrentDrain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

trtd(off)

tfQg

Qgs

Qgd

ISVSD

Typ Max

60VDS = 54V, VGS = 0VVGS = 20V, VDS = 0VVGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 30A

VDS = 10V, ID = 25A

VDD = 30V, ID = 48A,VGS = 10V, RGEN = 7.5Ω

VDS = 48V, ID = 48A, VGS = 10V

VDS = 25V, VGS = 0V, f = 1.0 MHz

VGS = 0V, IS = 30A

123034516

1812.532.5

3

2414656

81.52

16

501.2

19

pF

pFpF

ns

nsnsns

nC

nCnC

AV

19

4

Notes :a.Repetitive Rating : Pulse width limited by maximum junction temperature.b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.c.Guaranteed by design, not subject to production testing.d.L = 90µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C

CEP50N06/CEB50N06

3

C, C

apac

itanc

e (p

F)

ID, D

rain

Cur

rent

(A)

Ciss

Coss

Crss

1800

1500

1200

900

600

300

00 5 10 15 20 25

ID, D

rain

Cur

rent

(A)

RD

S(O

N),

Nor

mal

ized

RD

S(O

N),

On-

Res

ista

nce(

Ohm

s)

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation with Temperature

2.6

2.2

1.8

1.4

1.0

0.6

0.2

VGS=10VID=30A

-100 -50 0 50 100 150 200

VTH

, Nor

mal

ized

Gat

e-S

ourc

e Th

resh

old

Vol

tage

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variationwith Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

VDS=VGSID=250µA

-50 -25 0 25 50 75 100 125 150

IS, S

ourc

e-dr

ain

curr

ent (

A)

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward VoltageVariation with Source Current

0.3 0.6 0.9 1.2

100

10-1

101

1.81.5

VGS=0V

120

80

60

40

20

00 1 2 64 53

100

VGS=5V

VGS=4V

VGS=6V

VGS=7V

VGS=8V

VGS=10V125

100

75

50

25

00 4 8 10

-55 C

2 6

25 C

TJ=125 C

CEP50N06/CEB50N06

4

VG

S, G

ate

to S

ourc

e V

olta

ge (V

)

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe Operating Area

ID, D

rain

Cur

rent

(A)

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

t

V

V

ttd(on)

OUT

IN

on

r

10%

td(off)

90%

10% 10%

50% 50%

90%

toff

tf

90%

PULSE WIDTH

INVERTED

VDD

R

DV

VR

S

V

G

GS

IN

GEN

OUT

L

r(t),

Nor

mal

ized

Effe

ctiv

eTr

ansi

ent T

herm

al Im

peda

nce

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

10-2

10-5

PDM

t1t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet3. TJM-TC = P* RθJC (t)4. Duty Cycle, D=t1/t2

Single Pulse

0.01

100

10-1

100 10110-110-210-310-4

0.02

0.05

0.1

0.2

D=0.5

10

8

6

4

2

00 2 4 6 8

VDS=48VID=50A

102

101

100

102101100

100ms10ms

1ms

RDS(ON)Limit

DC

Single Pulse

TC=25 CTJ=175 C

100µs

4