package - advanced semiconductor...v04 5-17 hi gholta e, ru dn s uhf pulsed power transistor 420-470...

PACKAGE

HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10C 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/19/10 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 2

H V V0405-175 H igh Voltage, H igh Ruggedness UH F Pulsed Power Transistor

420-470 MHz, 300µs Pulse, 10% Duty Cycle

For UH F band, Weather and Long Range Radar Applications

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The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. !

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! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 175W output power measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design.

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PULSE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATING (IEC 134) THERMAL/RUGGEDNESS PERFORMANCE





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Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 450MHz.

!!!!!!!!!!!!Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 450MHz.





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!Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 175W.

!!!!!!!!!!!!!!Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 175W.





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Typical device performance under Class AB mode of operation at 450MHz and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The high voltage silicon vertical technology shows less than 1dB of power degradation over an extreme case teperature rise of 125°C.

Measured at P1dB Compression PointTEMP Gain (dB) Power (W) Power (dBm)

-40C 26.5 224 53.50C 25.9 233 53.725C 25.5 237 53.785C 24.2 210 53.2

!HVV0405-175 Performance over Temperature





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Zin* Zout*

Output

ImpedanceMatching Network

Input

ImpedanceMatching Network

!!

!!!!!!!!!!!!!!!!!!!!!!!!!!

Zo = 10

ZIN*

ZOUT*

420MHz

420MHz

PACKAGE DIMENSIONS

Note: Drawing is not actual size.

SOURCE

DRAIN

GATE

ASIPART NUMBERJDATE CODE

inchesmm

ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in thisdocument at any time and without notice. This document supersedes and replaces all informationsupplied prior to the publication hereof. Information in this document is believed to be accurate andreliable. However, ASI does not give any representations or warranties, either express or implied, asto the accuracy or completeness of such information and shall have no liability no liability for conse- -quences resulting from the use of such information. No license, either expressed or implied, is conveyedunder any ASI intellectual property rights, including any patent rights.

package - advanced semiconductor...v04 5-17 hi gholta e, ru dn s uhf pulsed power transistor 420-470...

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