pcn: pcn182406 date: to: pcn alerts mouser · o 24-channel direct memory access (dma) with...
TRANSCRIPT
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Document No. 001-11767 Rev. *I Page 1 of 2
Cypress Semiconductor Corporation, 198 Champion Court, San Jose, CA 95134. Tel: (408) 943-2600
PCN: PCN182406 Date: June 17, 2018 Subject: Qualification of Fab 25 as an Additional Wafer Fab Site, Test 25 as an Additional Wafer Sort Site and ASE-Kaohsiung as a Transfer Site for Assembly for the Automotive PSoC 3 Product Family To: PCN ALERTS MOUSER [email protected] Change Type: Major Description of Change: Cypress announces the qualification of Fab 25 in Austin, Texas as an additional wafer fab site and Test 25 in Austin, Texas as an additional wafer sort site for the Automotive PSoC 3 product family. In addition, Cypress also announces its qualification of assembly site for 100-Lead TQFP package at ASE-Kaohsiung, Taiwan (ASE-KH) for the Automotive PSoC 3 product family. The 100-Lead TQFP Pb-Free automotive packages (14x14 mm) is assembled at ASE-KH using the following Bill of Materials:
Material ASE-KH Bill of Materials JCET Bill of Materials
Mold Compound Sumitomo G631SH Kyocera KE-G6000
LeadFrame Finish Matte Sn NiPdAu
Die Attach Epoxy Sumitomo CRM-1076WA Henkel QMI-509
Bond Wire 0.8mil Au 1.0mil Au
Benefit of Change: Qualification of alternate manufacturing sites is part of the ongoing flexible manufacturing initiative announced by Cypress. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions. Part Numbers Affected: 56 See the attached Affected Parts List file for a list of all part numbers affected by this change. Note that any new parts that are introduced after the publication of this PCN will include all changes outlined in this PCN.
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Document No. 001-11767 Rev. *I Page 2 of 2
Qualification Status: These products have been qualified through a series of tests documented in the Qualification Test Plans summarized in the table below. The qualification reports can be found as attachments to this PCN or by visiting www.cypress.com and typing the QTP number in the keyword search window.
QTP Number Qualification
164004 Fab 25 PSoC 3 Device
171610 Test 25 Additional Sort Site
174308 ASE-KH as Additional Assembly Site
Sample Status: Qualification samples may not be built ahead of time for all part numbers affected by this change. Please review the attached Affected Parts List file for a list of affected part numbers with their associated sample ordering part numbers. Samples are available now unless there is an indication that the sample ordering part numbers are subject to lead times. If you require qualification samples, please contact your local Cypress sales representative as soon as possible, preferably within 30 days of the date of this PCN, to place any sample orders. Approximate Implementation Date: Effective 90 days from the date of this notification or upon customer approval, whichever comes first, all shipments of Commercial, Industrial and Automotive non-PPAP part numbers in the attached file will be supplied from Fab 25 and ASE-KH or other approved wafer fabrication sites. For Automotive PPAP part numbers this change will be effective upon customer approval. Cypress requests that qualifications are completed no later than October 1, 2018. Anticipated Impact: Products assembled at the new site are completely compatible with existing products from form, fit, functional, parametric and quality performance perspectives. Cypress also recommends that customers take this opportunity to review these changes against current application notes, system design considerations and customer environment conditions to assess impact (if any) to their application. Method of Identification: Cypress maintains traceability of product to wafer level, including wafer fabrication location, through the lot number marked on the package. Response Required: No response is required. For additional information regarding this change, contact your local sales representative or contact the PCN Administrator at [email protected]. Sincerely, Cypress PCN Administration
http://www.cypress.com/mailto:[email protected] -
Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 1 of 13
Cypress Semiconductor Corporation CY8C3xxx PSoC 3 FAB25 Characterization Report
Design Engineering Director Galen Stansell
Product Engineering Director Toan Ong
Product Engineer Dan Weinkauf
Applications Engineer Balasubramanian L [email protected]
Marketing Engineer
Anesh Kadudose [email protected]
www.cypress.com
198 Champion Ct.
San Jose, CA 95134 USA
Tel: (408) 943 2600 Fax: (408) 943 4730
mailto:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]://www.cypress.com/ -
Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 2 of 13
Table of Contents
Table of Contents .................................................................................................................................................. 2
Introduction 1.1 General Description ................................................................................................................................................ 3 1.2 Datasheet ................................................................................................................................................................ 5 1.3 Reference Documents and Application Notes ........................................................................................................ 5 1.4 Qualification Report ................................................................................................................................................ 6 1.5 Pin List .................................................................................................................................................................... 6
Characterization Hardware and Setup 2.1 DC Measurement System and Hardware ............................................................................................................... 7 2.2 Test Conditions ....................................................................................................................................................... 7
Electrical Specification 3.1 Absolute Maximum Ratings .................................................................................................................................... 8 3.2 Device Level Specification: N/A .............................................................................................................................. 8 3.3 Power Regulators: N/A ........................................................................................................................................... 8 3.4 GPIO DC Specifications.......................................................................................................................................... 9 3.5 GPIO AC Specification............................................................................................................................................ 9 3.6 SIO DC Specification .............................................................................................................................................. 9 3.7 SIO AC Specification ............................................................................................................................................ 10 3.8 XRES DC Specification......................................................................................................................................... 10 3.9 XRES AC Specification ......................................................................................................................................... 10 3.10 Analog Peripherals: N/A........................................................................................................................................ 10 3.11 Digital Peripherals: N/A ......................................................................................................................................... 10 3.12 Memory: N/A ......................................................................................................................................................... 10 3.13 PSoC System Resources: N/A ............................................................................................................................. 10 3.14 Clocking: N/A ........................................................................................................................................................ 10
Package 4.1 Package Characteristics ....................................................................................................................................... 11 4.2 Solder Reflow Peak Temperature ......................................................................................................................... 11 4.3 48 pin SSOP O483 Package Outline, 51-85061 ............................................................................................... 11 4.4 100 pin TQFP (14 x 14 x 1.4 mm) A100SA Package Outline, 51-85048 .......................................................... 12
Document History
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CY8C3xxxx Fab 25 Characterization Report
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Introduction
1 General Description With its unique array of configurable blocks, PSoC 3 is a true system level solution providing microcontroller unit (MCU), memory, analog, and digital peripheral functions in a single chip. The CY8C3xxx family offers a modern method of signal acquisition, signal processing, and control with high accuracy, high bandwidth, and high flexibility. Analog capability spans the range from thermocouples (near DC voltages) to ultrasonic signals. The CY8C38 family can handle dozens of data acquisition channels and analog inputs on every general-purpose input/output (GPIO) pin. The CY8C38 family is also a high-performance configurable digital system with some part numbers including interfaces such as USB, multimaster inter-integrated circuit (I2C), and controller area network (CAN). In addition to communication interfaces, the CY8C38 family has an easy to configure logic array, lexible routing to all I/O pins, and a high-performance single cycle 8051 microprocessor core. You can easily create system-level designs using a rich library of prebuilt components and boolean primitives using PSoC Creator, a hierarchical schematic design entry tool. The CY8C38 family provides unparalleled opportunities for analog and digital bill of materials integration while easily accommodating last minute design changes through simple firmware updates. Features:
Single cycle 8051 CPU o DC to 67 MHz operation o Multiply and divide instructions o Flash program memory, up to 64 KB, 100,000 write cycles, 20 years retention, and multiple
security features o 512-byte flash cache o Up to 8-KB flash error correcting code (ECC) or configuration storage o Up to 8 KB SRAM o Up to 2 KB electrically erasable programmable read-only memory (EEPROM), 1 M cycles,
and 20 years retention o 24-channel direct memory access (DMA) with multilayer AHB bus access o Programmable chained descriptors and priorities o High bandwidth 32-bit transfer support
Low voltage, ultra-low-power
o Wide operating voltage range: 1.71 V to 5.5 V o 0.8 mA at 3 MHz, 1.2 mA at 6 MHz, and 6.6 mA at 48 MHz o Low-power modes including: o 1-A sleep mode with real time clock and low-voltage detect (LVD) interrupt o 200-nA hibernate mode with RAM retention
Versatile I/O system
o 29 to 72 I/O (62 GPIOs, eight special input/outputs (SIO), two USBIOs o Any GPIO to any digital or analog peripheral routability o LCD direct drive from any GPIO, up to 46 16 segments o CapSense support from any GPIO o 1.2-V to 5.5-V I/O interface voltages, up to four domains
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CY8C3xxxx Fab 25 Characterization Report
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o Maskable, independent IRQ on any pin or port o Schmitt-trigger transistor-transistor logic (TTL) inputs o All GPIO configurable as open drain high/low, pull-up/ pull-down, High Z, or strong output o Configurable GPIO pin state at power-on reset (POR) o 25 mA sink on SIO
Digital peripherals
o 20 to 24 programmable logic device (PLD) based universal digital blocks (UDB) o Full CAN 2.0b 16 Rx, 8 Tx buffers o Full-speed (FS) USB 2.0 12 Mbps using internal oscillator o Up to four 16-bit configurable timer, counter, and PWM blocks o 67 MHz, 24-bit fixed point digital filter block (DFB) to implement FIR and IIR filters
Library of standard peripherals
o 8-, 16-, 24-, and 32-bit timers, counters, and PWMs o Serial peripheral interface (SPI), universal asynchronous transmitter receiver (UART), and
I2C o Many others available in catalog
Library of advanced peripherals
o Cyclic redundancy check (CRC) o Pseudo random sequence (PRS) generator o Local interconnect network (LIN) bus 2.0 o Quadrature decoder
Analog peripherals (1.71 V VDDA 5.5 V)
o 1.024 V 0.1% internal voltage reference across 40 C to +85 C o Configurable delta-sigma ADC with 8- to 20-bit resolution o Sample rates up to 192 ksps o Programmable gain stage: 0.25 to 16 o 12-bit mode, 192 ksps, 66-dB signal to noise and distortion ratio (SINAD), 1-bit INL/DNL o 16-bit mode, 48 ksps, 84-dB SINAD, 2-bit INL, 1-bit DNL o Up to four 8-bit, 8-Msps IDACs or 1-Msps VDACs o Four comparators with 95-ns response time o Up to four uncommitted opamps with 25-mA drive capability o Up to four configurable multifunction analog blocks. Example configurations are
programmable gain amplifier (PGA), transimpedance amplifier (TIA), mixer, and sample and hold (S/H)
o CapSense support.
Programming, debug, and trace o JTAG (4-wire), serial wire debug (SWD) (2-wire), and single wire viewer (SWV) interfaces o Eight address and one data breakpoint o 4-KB instruction trace buffer o Bootloader programming supportable through I2C, SPI, UART, USB, and other interfaces
Precision, programmable clocking o 3- to 62-MHz internal oscillator over full temperature and voltage range o 4- to 25-MHz crystal oscillator for crystal PPM accuracy o Internal PLL clock generation up to 67 MHz
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CY8C3xxxx Fab 25 Characterization Report
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o 32.768-kHz watch crystal oscillator o Low-power internal oscillator at 1, 33, and 100 kHz
Temperature and packaging o 40C to +85 C degrees automotive temperature o 48-pin SSOP and 100-pin TQFP package options
Digital
Filter
Block
ANALOG SYSTEMLCD Direct
Drive
CapSense
Temperature
Sensor
4 x
Opamp
+
-
SPC ADC
ADCs
4 x DAC 1 x
Del Sig
ADC
4 x SC/CT Blocks
(TIA, PGA, Mixer etc)
4 x
CMP
+
-
CAN
2.0
I2CMaster/
Slave
Universal Digital Block Array (24 x UDB)
4 x
Timer
Counter
PWM
FS USB
2.0
SYSTEM WIDE
RESOURCES
DIGITAL SYSTEM
Program
Debug &
Trace
Boundary
Scan
Program &
Debug8051 or
Cortex M3 CPUInterrupt
Controller
PHUB
DMA
SRAM
FLASH
EEPROM
EMIF
CPU SYSTEMMEMORY SYSTEM
SYSTEM BUS
Digital Interconnect
Analog Interconnect
1.7
1 t
o
5.5
V
0.5 to 5.5V
(Optional)
4-33 MHz
(Optional)
Xtal
Osc
32.768 KHz
(Optional)
RTC
Timer
IMO
Clo
ck
Tre
e
WDT
and
Wake
ILO
Clocking System
1.8V LDO
SMP
POR and
LVD
Sleep
Power
Power Management
System
USB
PHY
D+
D-
3 per
Opamp
GP
IOs
GP
IOs
GP
IOs
GP
IOs
GP
IOs
GP
IOs
SIO
GP
IOs
SIO
s
UDB
UDB
UDB
UDB
UDB
UDB
UDB UDB UDB
UDB
UDB
UDBUDBUDB UDB
UART
Logic
12-Bit PWM
I2C Slave8-Bit SPI
12-Bit SPILogic
8-Bit
Timer
16-Bit PRS
UDB
8-Bit
TimerQuadrature Decoder 16-Bit
PWM
Se
qu
en
cer
Us
ag
e E
xam
ple
fo
r U
DB UDBUDB
UDBUDB
UDBUDB
UDBUDB
Figure5: Simplified Block Diagram
Datasheet The CY8C3XXXX meets all datasheet specifications. The datasheet 001-54683 Rev ** is available under NDA through your local Cypress sales representative.
Reference Documents and Application Notes Cypress reference documents are available under NDA through your local Cypress sales representative. The CY8C38 family has a rich set of documentation, development tools, and online resources to assist you during your development process. Visit psoc.cypress.com/getting-started to find out more. The Technical Reference Manual (TRM) contains all the technical detail you need to use a PSoC device, including a complete description of all PSoC registers
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CY8C3xxxx Fab 25 Characterization Report
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Qualification Report The CY8C3XXXX is qualified under QTP# 164004
Pin List The Pinout diagram of the available package is shown below.
48 - Pin SSOP and 100 Pin TQFP part pinout.
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CY8C3xxxx Fab 25 Characterization Report
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1.0 Characterization Hardware and Setup
DC Measurement System and Hardware
Temperature Forcing System The Temptronics Thermostream Advanced Temperature Source is used to force ambient/industrial operating temperature -45C, 130C and 25C. Power Supply Agilent E3631A used to supply operating voltage to multiple DUT as well as to measure drawn current. Digital Multi Meter HP 34410A was used to measure voltages at 10 NPLC configuration. Clock Input Tektronix AFG3102 Arbitrary Function Generator or Stanford Research Systems DS360 was used to provide clock signal Oscilloscope Tektronix DPO7104 Digital Phosphor Oscilloscope was used for all frequency, duty cycle, rise/fall and delay measurements using Tektronix TAP2500 active probes. Probes All AC signals were measured using Tektronix TAP-1500 FET Probe Automatic Tester Equipment The HP93000 was used to for measurements of production compatible parameters.
Test Conditions Characterization was done on following devices across voltage specified in Table-1 and Temperature conditions.
Power supply Min Nominal Max Units
VDDD (Core Regulator Enabled) 1.8 - 3.3 V
VCCD 1.71 1.80 1.89 V
VDDD (Core Regulator Disabled) 1.71 1.80 1.89 V
VDDA (Core Regulator Enabled) 1.8 3.30 5.5 V
VCCA 1.71 1.80 1.89 V
VDDA (Core Regulator Disabled) 1.71 1.80 1.89 V
VDDIO 1.71 - 3.3 V
Temperature -45 25 130 C
Table 1: Test Condition
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CY8C3xxxx Fab 25 Characterization Report
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2.0 Characterization Data
Absolute Maximum Ratings
Specifications are valid for -40C Ta 125C and Tj 150C, except where noted. Specifications are valid for 1.71 V to 5.5 V, except where noted. The unique flexibility of the PSoC UDBs and analog blocks enable many functions to be implemented in PSoC Creator components, see the component data sheets for full AC/DC specifications of individual functions.
Device Level Specification: N/A
Power Regulators: N/A
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CY8C3xxxx Fab 25 Characterization Report
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GPIO DC Specifications Block CHAR ID Parameter Description Conditions Units Min Typical Max Min Average Max Min Average Max
I2C CHAR.183 IDD Block current consumption Enabled, configured for 100kbps mA - - 0.250 0.04 0.07 0.12
I2C CHAR.184 IDD Block current consumption Enabled, configured for 400kbps mA - - 0.260 0.06 0.09 0.12
GPIO CHAR.20 Vih_5p5V Input Voltage high threshold CMOS Input, PRT[x]CTL = 0 V 0.7*Vddio - - 0.411*Vddio 0.411*Vddio 0.4112*Vddio
GPIO CHAR.21 Vih_1p7V Input Voltage high threshold CMOS Input, PRT[x]CTL = 0 V 0.7*Vddio - - 0.498*VDDIO 0.507*VDDIO 0.517*VDDIO 0.531*Vddio 0.547*Vddio 0.589*Vddio
GPIO CHAR.22 Vil_5p5V Input voltage low threshold CMOS Input, PRT[x]CTL = 0 V - - 0.3*Vddio 0.395*Vddio 0.405*Vddio 0.414*Vddio
GPIO CHAR.23 Vil_1p7V Input voltage low threshold CMOS Input, PRT[x]CTL = 0 V - - 0.3*Vddio 0.480*VDDIO 0.489*VDDIO 0.500*VDDIO 0.484*Vddio 0.486*Vddio 0.492*Vddio
GPIO CHAR.24 Vih Input Voltage high threshold LVTTL Input, PRT[x]CTL = 1, Vddio < 2.7V V 0.7*Vddio - - 0.448*VDDIO 0.459*VDDIO 0.469*VDDIO 0.409*Vddio 0.465*Vddio 0.572*Vddio
GPIO CHAR.25 Vih Input Voltage high threshold LVTTL Input, PRT[x]CTL = 1, Vddio > =2.7V V 2 - - 1.237*VDDIO 1.252*VDDIO 1.273*VDDIO 1.11 1.40 1.81
GPIO CHAR.26 Vil Input Voltage low threshold LVTTL Input, PRT[x]CTL = 1, Vddio < 2.7V V - - 0.3*Vddio 0.427*VDDIO 0.440*VDDIO 0.452*VDDIO 0.401*Vddio 0.439*Vddio 0.466*Vddio
GPIO CHAR.27 Vil Input Voltage low threshold LVTTL Input, PRT[x]CTL = 1, Vddio >=2.7V V - - 0.8 1.188*VDDIO 1.203*VDDIO 1.221*VDDIO 1.08 1.35 1.74
GPIO CHAR.28 Voh Output Voltage high Ioh = 4mA at 3.3Vddio V Vddio - 0.6 - - 2.95 3.03 3.04 Vddio-0.278 Vddio-0.217 Vddio-0.152
GPIO CHAR.29 Voh Output Voltage high Ioh = 1mA at 1.8Vddio V Vddio - 0.5 - - 1.60 1.66 1.67 Vddio-0.125 Vddio-0.091 Vddio-0.046
GPIO CHAR.30 Vol Output Voltage low Iol = 8mA at 3.3Vddio V - - 0.6 0.19 0.19 0.19 0.15 0.20 0.25
GPIO CHAR.32 Vol Output Voltage low Iol = 4mA at 1.8Vddio V - - 0.6 0.17 0.18 0.19 0.08 0.14 0.20
GPIO CHAR.33 Rpullup Pull-up Resistor kOhm 3.5 5.6 8.5 5.30 5.55 5.85 5.79 6.17 6.55
GPIO CHAR.34 Rpulldown Pull-down Resistor kOhm 3.5 5.6 8.5 5.35 5.91 5.59 4.73 5.12 5.51
GPIO CHAR.35 Iil input leakage current (Absolute value) [1] 25'C, Vddio = 3.0V nA - - 2 - - 1.2
GPIO CHAR.36 Cin Input capacitance GPIOs not shared with opamp outputs, MHz ECO or kHzECO pF - 4.0 7 2.60 7.63 4.16
GPIO CHAR.37 Cin Input capacitance GPIOs shared with MHz ECO or kHzECO pF - 5.0 7 4.56 5.48 4.76
GPIO CHAR.38 Cin Input capacitance GPIOs shared with opamp outputs pF - - 18 16.54 16.69 17.00 16.45 16.73 16.98
GPIO CHAR.40 Vh LVTTL - Input Voltage Hysterisis (Schmitt-Trigger) [1] mV - 40.0 - 4.00 36.83 110.00 60.00 75.00 80.00
GPIO CHAR.41 Idiode Current through protection diode to Vddio and Vssio uA - - 100
GPIO CHAR.42 Rglobal Resistance pin to analog global bus 25 C, VDDIO = 3.0 V Ohm - 320.0 - 404.16 436.10 458.22 423.73 520.51 672.04
GPIO CHAR.43 Rmux Resistance pin to analog mux bus 25 C, VDDIO = 3.0 V Ohm - 220.0 - 304.46 323.38 342.59 295.86 375.08 495.05
Covered in ESD
Measured value is less than 1 nA
Data Sheet CY8C3xxxx FAB 25 Characterization DataSkywater FAB 4 Characterization Data
No Data
No Data
Covered in ESD
No Data
No Data
No Data
No Data
GPIO AC Specification Block CHAR ID Parameter Description Conditions Units Min Typical Max Min Average Max Min Average Max
GPIO CHAR.44 TriseF Rise time in Fast Strong Mode [1] 3.3V Vddio Cload = 25 pF ns - - 12 2.34 6.15 7.14 1.62 2.62 3.49
GPIO CHAR.45 TfallF Fall time in Fast Strong Mode[1] 3.3V Vddio Cload = 25 pF ns - - 12 2.91 6.59 7.37 1.96 3.21 4.26
GPIO CHAR.46 TriseS Rise time in Slow Strong Mode [1] 3.3V Vddio Cload = 25 pF ns - - 60 17.3 33.6 36.4 14.41 16.71 18.31
GPIO CHAR.47 TfallS Rise time in Slow Strong Mode [1] 3.3V Vddio Cload = 25 pF ns - - 60 17.1 33.9 37.2 14.91 16.50 18.31
GPIO CHAR.48 Fgpioout GPIO output operating frequency 2.7V < Vddio < 5.5V, Fast strong drive mode 90/10% Vddio into 25 pF, -40C Ta 85C and Tj 100C MHz - - 33
GPIO CHAR.50 Fgpioout GPIO output operating frequency 1.71V < Vddio < 2.7V, Fast strong drive mode 90/10% Vddio into 25 pF, -40C Ta 85C and Tj 100C MHz - - 20
GPIO CHAR.52 Fgpioout GPIO output operating frequency 3.3V < Vddio < 5.5V, Slow strong drive mode 90/10% Vddio into 25 pF, -40C Ta 85C and Tj 100C MHz - - 7
GPIO CHAR.54 Fgpioout GPIO output operating frequency 1.71V < Vddio < 3.3V, Slow strong drive mode 90/10% Vddio into 25 pF, -40C Ta 85C and Tj 100C MHz - - 3.5
GPIO CHAR.56 Fgpioin GPIO input operating frequency 90/10% VDDIO, -40C Ta 85C and Tj 100C MHz - - 66
Functionally tested with 10% margin
Functionally tested with 10% margin
Functionally tested with 10% margin
Functionally tested with 10% margin
Functionally tested with 10% margin
Functionally tested with 20% margin
Functionally tested with 20% margin
Functionally tested with 20% margin
Data Sheet CY8C3xxxx FAB 25 Characterization DataSkywater FAB 4 Characterization Data
Functionally tested with 20% margin
Functionally tested with 20% margin
SIO DC Specification
Block CHAR ID Parameter Description Conditions Units Min Typical Max Min Average Max Min Average Max
SIO CHAR.65 Vinmax Maximum Input Voltage All allowed values of Vddio and Vdd (see section 11.2.1) V - - 5.5
SIO CHAR.66 Vinref Input voltage reference (Set by internal DAC) V 0.5 - 0.52*Vddio
SIO CHAR.67 Voutref Output voltage reference (set internally for adjustable output levels) Vddio > 3.7 V 1 - Vddio-1
SIO CHAR.68 Voutref Output voltage reference (set internally for adjustable output levels) Vddio < 3.7 V 1 - Vddio - 0.5
SIO CHAR.69 Vih Input voltage high threshold GPIO mode CMOS input V 0.7 * Vddio - - 0.496*VDDIO 0.507*VDDIO 0.520*VDDIO 0.41*Vddio 0.47*Vddio 0.59*Vddio
SIO CHAR.70 Vih Input voltage high threshold Differential input mode Hysteresis disabled V SIO_ref+0.2 - - 0.57 0.59 0.62 0.01 0.089 0.231
SIO CHAR.71 Vil Input voltage low threshold GPIO mode CMOS input V - - 0.3*Vddio 0.474*VDDIO 0.486*VDDIO 0.497*VDDIO 0.4*Vddio 0.44*Vddio 0.49*Vddio
SIO CHAR.72 Vil Input voltage low threshold Differential input mode Hysteresis disabled V - - SIO_ref -0.2 0.545*VDDIO 0.565*VDDIO 0.586*VDDIO 0.002 0.013 0.025
SIO CHAR.73 Voh Output voltage high Unregulated mode Ioh = 4mA, Vddio = 3.3V V Vddio - 0.4 - - 2.91 3.03 3.04 0.111 0.155 0.191
SIO CHAR.74 Voh Output voltage high Regulated mode Ioh = 1mA, Vddio = 3.3V V SIO_ref-0.65 - SIO_ref + 0.2 3.28 3.29 3.29SIO_ref + 0.015 SIO_ref + 0.104 SIO_ref + 0.161
SIO CHAR.75 Voh Output voltage high Regulated mode Ioh = 0.1mA V SIO_ref-0.3 - SIO_ref + 0.2 3.04 3.23 3.25SIO_ref - 0.224 SIO_ref - 0.235 SIO_ref - 0.256
SIO CHAR.77 Vol Output voltage low Vddio = 3.3V, lol = 25mA V - - 0.8 0.19 0.19 0.19 0.327 0.459 0.583
SIO CHAR.78 Vol Output voltage low Vddio = 3.3V, lol = 20mA V - - 0.4 0.260 0.352 0.430
SIO CHAR.79 Vol Output voltage low Vddio = 1.80V, lol = 4mA V - - 0.4 0.170 0.190 0.190 0.071 0.105 0.136
SIO CHAR.80 Rpullup Pull-up Resistor kOhm 3.5 5.6 8.5 5.26 5.57 5.84 5.03 5.45 5.84
SIO CHAR.81 Rpulldown Pull-down Resistor kOhm 3.5 5.6 8.5 5.31 5.61 5.89 5.17 5.57 5.96
SIO CHAR.82 Iil Input leakage current (absolute value) [1] Vih
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CY8C3xxxx Fab 25 Characterization Report
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Page 10 of 13
SIO AC Specification Block CHAR ID Parameter Description Conditions Units Min Typical Max Min Average Max Min Average Max
SIO CHAR.88 TriseF Rise time in fast strong mode (90/10%) Cload = 25 pF, VDDIO = 3.3 V ns - - 12 2.59 3.5 4.49 2.77 3.56 4.53
SIO CHAR.89 TfallF Fall time in fast strong mode (90/10%) Cload = 25 pF, VDDIO = 3.3 V ns - - 12 2.71 3.28 3.81 2.39 3.21 4.07
SIO CHAR.90 TriseS Rise time in slow strong mode (90/10%) Cload = 25 pF, VDDIO = 3.3 V ns - - 75 4.37 4.75 5.18 23.15 37.05 46.75
SIO CHAR.91 TfallS Fall time in slow strong mode (90/10%) Cload = 25 pF, VDDIO = 3.3 V ns - - 60 3.78 4.06 4.33 19.96 36.12 47.50
SIO CHAR.92 FsiooutSIO output operating frequency
2.7 V < VDDIO < 5.5 V, Unregulated output (GPIO) mode, fast strong drive mode
90/10% VDDIO into 25 pF, -40C
Ta 85C and Tj 100CMHz - - 33
SIO CHAR.94 FsiooutSIO output operating frequency
1.71 V < VDDIO < 2.7 V, Unregulated output (GPIO) mode, fast strong drive mode90/10% VDDIO into 25 pF MHz - - 16
SIO CHAR.95 FsiooutSIO output operating frequency
3.3 V < VDDIO < 5.5 V, Unregulated output (GPIO) mode, slow strong drive mode90/10% VDDIO into 25 pF MHz - - 5
SIO CHAR.96 FsiooutSIO output operating frequency
1.71 V < VDDIO < 3.3 V, Unregulated output (GPIO) mode, slow strong drive mode90/10% VDDIO into 25 pF MHz - - 4
SIO CHAR.97 FsiooutSIO output operating frequency
2.7V < VDDIO < 5.5 V, Regulated output mode, fast strong drive modeOutput continuously switching into 25 pF MHz - - 20
SIO CHAR.98 FsiooutSIO output operating frequency
1.71 V < VDDIO < 2.7 V, Regulated output mode, fast strong drive modeOutput continuously switching into 25 pF MHz - - 10
SIO CHAR.99 FsiooutSIO output operating frequency
1.71 V < VDDIO
-
CY8C3xxxx Fab 25 Characterization Report
Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 11 of 13
3.0 Packaging
Package Characteristics
Solder Reflow Peak Temperature
48 pin SSOP O483 Package Outline, 51-85061
-
CY8C3xxxx Fab 25 Characterization Report
Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 12 of 13
100 pin TQFP (14 x 14 x 1.4 mm) A100SA Package Outline, 51-85048
-
CY8C3xxxx Fab 25 Characterization Report
Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 13
4.0 Document History Page
Rev. ECN No. Orig. of Change
Description of Change
** CY8C3XXX PSoC 3 FAB25 Characterization Report
-
Document No. 002-19700 Rev. *A ECN #: 5874099
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Page 1 of 7
Cypress Semiconductor Sort Site Qualification Report
QTP# 171610 VERSION *A
September 2017
Cypress Test 25, Austin, Texas
Sort Site for S8 Technology
MPD / MCD Devices
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE
Prepared By: Honesto Sintos
Reviewed By: Lorena Zapanta
Reliability Engineer Reliability Manager
Approved By:
David Hoffman
Reliability Director
mailto:[email protected] -
Document No. 002-19700 Rev. *A ECN #: 5874099
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Page 2 of 7
PACKAGE/PRODUCT QUALIFICATION HISTORY
QTP Number
Description of Qualification Purpose Date
151907 Cypress Test 25, Austin, Texas Sort Site Qualification for S4 Technology
June 2015
171610 Cypress Test 25, Austin, Texas Sort Site Qualification for S8 Technology
April 2017
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Page 3 of 7
QUALIFICATION COVERAGE RANGE
MARKETING PART NUMBER DEVICE DESCRIPTION
CY8C4013 / CY8C4014 / CY8CMBR3002 / CY8CMBR3102 / CY8CMBR3110
CapSense MBR3
CY8CMBR31 / CY8C4013 / CY8C4014 PSoC 4000
CY8C4014 Automotive PSoC 4000
CY8C4124 / CY8C4125 / CY8C4244 / CY8C4245 PSoC 4100 & PSoC 4200
CY8C4124 / CY8C4125 / CY8C4244 / CY8C4245 Automotive PSoC 4100 & PSoC 4200
CY8CEBIKE PSoC 4100 & PSoC 4200
CY8C4125 /CY8C4126 / CY8C4127 PSoC 4100M & PSoC 4200M M Series
CY8C4245 / CY8C4246 / CY8C4247 PSoC 4100M & PSoC 4200M M Series
CY8C4246 / CY8C4247 / CY8C4248 PSoC 4200L L-Series
CY8C4127 / CY8C4247 PSoC 4 BLE 128K
CYBL1016 / CYBL10162 / CYBL10163 PRoCTM-BLE 128K
CYBL10461 / CYBL10462 / CYBL10463 PRoCTM-BLE 128K
CYBL10561 / CYBL10562 / CYBL10563 PRoCTM-BLE 128K
CYBL10999 PRoCTM-BLE 128K
CY8C4128 / CY8C4248 PSoC 4 BLE 256K
CYBL10573 PRoCTM-BLE 256K
CY8C3244 / CY8C3245 / CY8C3246 / CY8C3444 Automotive PSoC 3
CY8C3445 / CY8C3446 / CY8C3645 / CY8C3646 CY8C3665 / CY8C3666 / CY8C3846 /
CY8C3866 / Automotive PSoC 3
CY8C3244 / CY8C3245 / CY8C3246 / CY8C3444 PSoC 3
CY8C3445 / CY8C3446 / CY8C3665 / CY8C3666 / CY8C3846 / CY8C3865 /
CY8C3866 / CY8C3MFIDOCK / CY8C3USBAUDIO PSoC 3
CY8C5267 / CY8C5268 / CY8C5287 / CY8C5288/ CY8C5467 / CY8C5468 / CY8C5488 / CY8C5666
CY8C5667 / CY8C5668 / CY8C5688 / CY8C5866 / CY8C5867 / CY8C5868 / CY8C5888
PSoC 5LP
CY8CTMA1036 / CY8CTMA460 / CY8CTMA461/ CY8CTMA768
Automotive True Touch Gen4 Touchscreen Controller
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Page 4 of 7
QUALIFICATION COVERAGE RANGE
MARKETING PART NUMBER DEVICE DESCRIPTION
CYTMA445A / CYTMA525A / CYTT21100 CYTT21401 / CYTT21402 /CYTT21403
True Touch Gen6M Touchscreen Controller
CYTT21100 / CYTT21401/ CYTT21402 CYTT21403 / CYTT31401/ CYTT31702
CYTT31802 / CYTT32302
True Touch Gen6L Touchscreen Controller
CYAT81682 / CYAT81685 / CYAT81688 Automotive True Touch Gen6XL
Touchscreen Controller
CYFPA1I True Touch Fingerprint
CYPD1103 / CYPD1104 / CYPD1105 CYPD1120 / CYPD1121 / CYPD1122
CYPD1134
EZ-PDTM CCG1 USB Type-C PD Controller
CYPD2103 / CYPD2104 / CYPD2105 CYPD2119 / CYPD2120 / CYPD2134
EZ-PDTM CCG2 USB Type-C PD Controller
CY7C65210 / CY7C65211 / CY7C65213 CY7C65215 / CY7C65217 / CY7C65221
USB-Serial Bridge Controller
CY14B064 / CY14E064 / CY14MB064 / CY14ME064 64Kb Serial nvSRAM
CY14B256 / CY14E256 256Kb Serial nvSRAM
CY14B512 512Kb Serial nvSRAM
CY14B101 / CY14E101 1Mb Serial nvSRAM
CY14V101 1Mb Quad SPI nvSRAM
CY14B256 / CY14E256 / CY14U256 / CY14V256 256Kb Parallel nvSRAM
CY14101V / CY14B101 / CY14V101 1Mb Parallel nvSRAM
CY14B102NS 2Mb Parallel nvSRAM
CY14104V / CY14B104 / CY14V104 4Mb Parallel nvSRAM
CY14B108 / CYATB108 8Mb Parallel nvSRAM
CY14B116 / CY14V116 / CY14E116 16Mb Parallel nvSRAM
CY27410F / CY27410L 4-PLL Spread-Spectrum Clock Generator
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Page 5 of 7
Reliability Test Data
QTP #: 151907
Device Fab Lot # Assembly Lot# Test Loc Yield
SORT TEST: CORRELATION
Sort Yield:
8C24094AC 4446219 w2, w4, w5 N/A CMI-FAB25 Correlated
8A24094AC 4510997 w5, w6, w7 N/A CMI-FAB25 Correlated
8A24094AC 4506339 w6, w7, w8 N/A CMI-FAB25 Correlated
Bin Movement:
8C24094AC 4446219 w2 N/A CMI-FAB25 Correlated
8A24094AC 4510997 w5 N/A CMI-FAB25 Correlated
8A24094AC 4506339 w6 N/A CMI-FAB25 Correlated
Fishers Exact:
8C24094AC 4446219 w2, w4, w5 N/A CMI-FAB25 >0.05
8A24094AC 4510997 w5, w6, w7 N/A CMI-FAB25 >0.05
8A24094AC 4506339 w6, w7, w8 N/A CMI-FAB25 >0.05
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Document No. 002-19700 Rev. *A ECN #: 5874099
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Page 6 of 7
Reliability Test Data
QTP #: 171610
Device Fab Lot # Assembly Lot# Test Loc Yield
SORT TEST: CORRELATION
Sort Yield:
8A20680BB 3639013 w21 N/A FAB25 Correlated
Bin Movement:
8A20680BB 3639013 w21 N/A FAB25
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Document No. 002-19700 Rev. *A ECN #: 5874099
Document History Page
Document Title: QTP#171610: Cypress Test 25, Austin, Texas Sort Site for S8 Technology Document Number: 002-19700
Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 7 of 7
Rev. ECN No.
Orig. of Change
Description of Change
** 5747717 HSTO Initial Spec Release
*A 5874099 GKUS 1. Rearranged the nvSRAM parts as per the density & interface. 2. Included CY14B101 in the 1Mb Serial nvSRAM row which was
missed in the last revision.
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Document No. 002-23499 Rev. *B ECN #: 6168197
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Page 1 of 11
Cypress Semiconductor Automotive Product Qualification Report
QTP# 164004 VERSION **
June 2018
Automotive PSoC3 Device Family S8P-5PT Technology, Fab25
CY8CTMA616A CY8CTMA884A
Automotive Programmable System-On-Chip (PSoC) Application
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE
Prepared By: Honesto Sintos
Reviewed By: Sandhya Chandrashekhar
Reliability Engineer Reliability Manager
Approved By:
David Hoffman
Reliability Director
mailto:[email protected] -
Document No. 002-23499 Rev. *B ECN #: 6168197
Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 2 of 11
PRODUCT QUALIFICATION HISTORY
Qual Report
Description of Qualification Purpose Date
Comp
164004 Qualification of Automotive PSoC3 T05 Device, S8P-5P Technology, Fab25 June 2018
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Page 3 of 11
PRODUCT DESCRIPTION
Qualification of Automotive PSoC3 T05 Device, S8P-5P Technology, Fab25
Marketing Part #: CY8CTMA616A / CY8CTMA884A
Device Description: Automotive Programmable System on a Chip
Cypress Division: Cypress Semiconductor Corporation MCU and Connectivity Division (MCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers: Proprietary Metal Composition: Proprietary
Passivation Type and Materials: Proprietary
Generic Process Technology/Design Rule Proprietary
Gate Oxide Material/Thickness (MOS): Proprietary
Name/Location of Die Fab (prime) Facility: Cypress, Fab 25
Die Fab Line ID/Wafer Process ID: S8P-5P
PACKAGE AVAILABILITY
PACKAGE ASSEMBLY FACILITY SITE QTP NUMBER
100-Lead TQFP 14x14x1.4mm ASEK-Taiwan (G) 174308
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Page 4 of 11
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation: AZ0AB
Package Outline, Type, or Name: 100-Lead TQFP 14x14x1.4mm
Mold Compound Name/Manufacturer: EME-G631H / Sumitomo
Mold Compound Flammability Rating: UL-94 V-0
Mold Compound Alpha Emission Rate: N/A (Not low alpha mold compound)
Oxygen Rating Index: >28% 54%
Lead Frame Designation: Full Metal Pad
Lead Frame Material: Copper
Substrate Material: N/A
Lead Finish, Composition / Thickness: Pure Sn
Die Backside Preparation Method/Metallization: Backgrind
Die Separation Method: Wafer Saw
Die Attach Supplier: Sumitomo
Die Attach Material: CRM-1076WA
Bond Diagram Designation 002-19665
Wire Bond Method: Thermosonic
Wire Material/Size: Au / 0.8mil (20um)
Thermal Resistance Theta JA C/W: 34
Package Cross Section Yes/No: Yes
Assembly Process Flow: 49-41999M
Name/Location of Assembly (prime) facility: ASEK-Taiwan (G)
MSL LEVEL 3
REFLOW PROFILE 260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location: CML-R
Note: Please contact a Cypress Representative for other packages availability.
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Document No. 002-23499 Rev. *B ECN #: 6168197
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Page 5 of 11
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test Test Condition (Temp/Bias)
Result P/F
High Temperature Operating Life Early Failure Rate
AEC-Q100-008 and JESD22-A108, 150C
Dynamic Operating Condition, Vcc Max = 5.77V P
Endurance /High Temperature Operating Life Latent Failure Rate
JESD22-A108, 150C / Endurance (200k Cycles) Dynamic Operating Condition, Vcc Max = 5.77V P
High Accelerated Saturation Test (HAST)
JESD22-A110, 130C, 5.0V, 85%RH
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P
Temperature Cycle JESD22-A104, -65C to 150C Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
P
Pressure Cooker JESD22-A102, 121C, 100%RH, 15 Psig
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C P
Acoustic J-STD-020
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
P
Endurance/Data Retention Endurance (200k Cycles)
AEC-Q100-005, 150C, non-biased P
Wire Bond Pull Mil-Std 883, Method 2011 P
Post Temperature Cycle Wire Bond Pull
Mil-Std 883, Method 2011 P
Dye Penetrant Test Criteria: No Package Crack P
Electrostatic Discharge Charge Device Model (ESD-CDM)
AEC-Q100-011
250V/500V/ 750V (corner pins) P
Electrostatic Discharge
Human Body Model (ESD-HBM)
AEC-Q100-002
500V/1000V/2000V P
Static Latch-up AEC-Q100-004, 125C, 100mA P
Electrical Distribution AEC-Q100-009 P
Wire Ball Shear AEC-Q100-001 P
Final Visual JESD22-B101B P
Physical Dimensions JESD22B100 and B108 P
Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P
Solderability JESD22-B102 P
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Page 6 of 11
RELIABILITY FAILURE RATE SUMMARY
Stress/Test Device Tested/ Device Hours
# Fails
Activation Energy
Thermal AF3
Failure Rate
High Temperature Operating Life Early Failure Rate
11,597 Devices 0 N/A N/A 0 PPM
High Temperature Operating Life1,2 Long Term Failure Rate
99,960 Device Hours 0 0.7 170 ** FIT
**Insufficient samples to calculate FIT Rate. **Based on Automotive qualification samples size.
1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. 2 Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation
where: EA =The Activation Energy of the defect mechanism. K = Boltzmanns constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at
use conditions.
AF = E
k
1
T-
1
T
A
2 1
exp
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Page 7 of 11
Reliability Test Data
QTP #: 164004
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 22 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 22 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 22 0
STRESS: BALL SHEAR
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: BOND PULL
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: CHARACTERIZATION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
STRESS: CONSTRUCTIONAL ANALYSIS
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 5 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 5 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 5 0
STRESS: DIE SHEAR
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
STRESS: DYE PENETRANT
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
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Document No. 002-23499 Rev. *B ECN #: 6168197
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Page 8 of 11
Reliability Test Data
QTP #: 164004
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: ELECTRICAL DISTRIBUTION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 5.77V, Vcc Max
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 48 3008 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 48 4369 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 48 4220 0
STRESS: ENDURANCE + DATA RETENTION, 150C
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G CYCLING 76 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 1000 76 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G CYLING 80 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 1000 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G CYCLING 79 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 1000 79 0
STRESS: ENDURANCE + HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 5.77V, Vcc Max
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G CYCLING 81 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 408 81 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G CYLING 85 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 408 85 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G CYCLING 79 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 408 79 0
STRESS: ESD-CHARGE DEVICE MODEL
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 250 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 500 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 750 3 0
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Page 9 of 11
Reliability Test Data
QTP #: 164004
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 500 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 1000 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 2000 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 2200 3 0
STRESS: FINAL VISUAL INSPECTION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 7173 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 7586 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 7376 0
STRESS: HI-ACCEL SATURATION TEST, 130C, 5.5V, 85%RH, PRE COND 192 HR 30C/60%RH, MSL3
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 96 79 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 96 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 96 80 0
STRESS: PRESSURE COOKER TEST
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 96 78 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 168 77 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 96 80 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 168 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 96 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 168 80 0
STRESS: PHYSICAL DIMENSION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: POST TCT BOND PULL
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 500 5 0
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Reliability Test Data
QTP #: 164004
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: PRE/POST LFR CRITICAL PARAMETERS
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: STATIC LATCH-UP (+/-100mA 125C)
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 6 0
STRESS: SOLDERABILITY
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 500 85 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 1000 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 500 80 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 1000 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 500 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 1000 80 0
STRESS: X-RAY
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
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Document No. 002-23499 Rev. *B ECN #: 6168197
Document History Page
Document Title: QTP#180907: AUTOMOTIVE PSoC 4000S S8PFHD-10R TECHNOLOGY, Fab25 (Cu BEOL INTERCONNECT)
Document Number: 002-23499
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Page 11 of 11
Rev. ECN No.
Orig. of Change
Description of Change
** HSTO Initial Spec Release
-
Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 1 of 9
Cypress Semiconductor AutomotivePackage Qualification Report
QTP# 174308 VERSION **June 2018
100-lead TQFP (14x14x1.4mm)
Pure Sn leadfinish, Au Wire
MSL3, 260C Reflow
ASEK-Taiwan (G)
FOR ANY QUESTIONS ON THIS REPORT, PLEASE [email protected] or via a CYLINK CRM CASE
Prepared By:Honesto Sintos
Reviewed By:Lorena Zapanta
Reliability Engineer Reliability Manager
Approved By:David Hoffman
Reliability Director
mailto:[email protected] -
Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 2 of 9
PACKAGE QUALIFICATION HISTORY
QTPNumber
Description of Qualification Purpose Date
174308
Qualification of Automotive 100-lead TQFP (14x14x1.4mm) Packagein ASEK-Taiwan (G) using 0.8mil Au wire with EME-G631H moldcompound, CRM1076WA die attach material, Cu leadframe and PureSn leadfinish at MSL3, 260C Reflow Temperature
Jun2018
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Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 3 of 9
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation: AZ0AB
Package Outline, Type, or Name: 100-Lead TQFP 14x14x1.4mm
Mold Compound Name/Manufacturer: EME-G631H / Sumitomo
Mold Compound Flammability Rating: UL-94 V-0
Mold Compound Alpha Emission Rate: N/A (Not low alpha mold compound)
Oxygen Rating Index: >28% 54%
Lead Frame Designation: Full Metal Pad
Lead Frame Material: Copper
Substrate Material: N/A
Lead Finish, Composition / Thickness: Pure Sn
Die Backside Preparation Method/Metallization: Backgrind
Die Separation Method: Wafer Saw
Die Attach Supplier: Sumitomo
Die Attach Material: CRM-1076WA
Bond Diagram Designation 002-19665
Wire Bond Method: Thermosonic
Wire Material/Size: Au / 0.8mil (20um)
Thermal Resistance Theta JA C/W: 34
Package Cross Section Yes/No: Yes
Assembly Process Flow: 49-41999M
Name/Location of Assembly (prime) facility: ASEK-Taiwan (G)
MSL LEVEL 3
REFLOW PROFILE 260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location: CML (R)
Note: Please contact a Cypress Representative for other package availability.
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Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 4 of 9
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test Test Condition(Temp/Bias)
ResultP/F
High Temperature Operating LifeEarly Failure Rate
AEC-Q100-008 and JESD22-A108, 150C
Dynamic Operating Condition, Vcc Max = 5.77VP
Endurance /High TemperatureOperating Life Latent Failure Rate
JESD22-A108, 150C / Endurance (200k Cycles)Dynamic Operating Condition, Vcc Max = 5.77V P
High Accelerated Saturation Test(HAST)
JESD22-A110, 130C, 5.0V, 85%RH
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5CP
Temperature Cycle JESD22-A104, -65C to 150CPrecondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5CP
Pressure Cooker JESD22-A102, 121C, 100%RH, 15 Psig
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5CP
Acoustic J-STD-020
Precondition: JESD22-A113 Moisture Sensitivity MSL 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C
P
Endurance/Data Retention Endurance (200k Cycles)
AEC-Q100-005, 150C, non-biasedP
Wire Bond Pull Mil-Std 883, Method 2011 P
Post Temperature Cycle WireBond Pull
Mil-Std 883, Method 2011P
Dye Penetrant Test Criteria: No Package Crack P
Electrostatic Discharge ChargeDevice Model (ESD-CDM)
AEC-Q100-011
250V/500V/ 750V (corner pins)P
Electrostatic Discharge
Human Body Model (ESD-HBM)
AEC-Q100-002
500V/1000V/2000VP
Static Latch-up AEC-Q100-004, 125C, 100mA P
Electrical Distribution AEC-Q100-009 P
Wire Ball Shear AEC-Q100-001 P
Final Visual JESD22-B101B P
Physical Dimensions JESD22B100 and B108 P
Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P
Solderability JESD22-B102 P
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Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 5 of 9
Reliability Test Data
QTP #: 174308
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 22 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 22 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 22 0
STRESS: BALL SHEAR
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: BOND PULL
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: CHARACTERIZATION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
STRESS: CONSTRUCTIONAL ANALYSIS
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 5 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 5 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 5 0
STRESS: DIE SHEAR
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
STRESS: DYE PENETRANT
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
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Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 6 of 9
Reliability Test Data
QTP #: 174308
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: ELECTRICAL DISTRIBUTION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 5.77V, Vcc Max
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 48 3008 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 48 4369 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 48 4220 0
STRESS: ENDURANCE + DATA RETENTION, 150C
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G CYCLING 76 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 1000 76 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G CYLING 80 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 1000 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G CYCLING 79 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 1000 79 0
STRESS: ENDURANCE + HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 5.77V, Vcc Max
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G CYCLING 81 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 408 81 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G CYLING 85 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 408 85 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G CYCLING 79 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 408 79 0
STRESS: ESD-CHARGE DEVICE MODEL
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 250 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 500 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 750 3 0
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Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 7 of 9
Reliability Test Data
QTP #: 174308
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 500 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 1000 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 2000 3 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 2200 3 0
STRESS: FINAL VISUAL INSPECTION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 7173 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 7586 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 7376 0
STRESS: HI-ACCEL SATURATION TEST, 130C, 5.5V, 85%RH, PRE COND 192 HR 30C/60%RH, MSL3
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 96 79 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 96 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 96 80 0
STRESS: PRESSURE COOKER TEST
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 96 78 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 168 77 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 96 80 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 168 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 96 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 168 80 0
STRESS: PHYSICAL DIMENSION
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: POST TCT BOND PULL
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 500 5 0
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Document No.002-24180 Rev. **ECN # 6201199
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 8 of 9
Reliability Test Data
QTP #: 174308
Device Package Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism
STRESS: PRE/POST LFR CRITICAL PARAMETERS
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 30 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 30 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 30 0
STRESS: STATIC LATCH-UP (+/-100mA 125C)
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 6 0
STRESS: SOLDERABILITY
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 500 85 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 1000 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G 500 80 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G 1000 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 500 80 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G 1000 80 0
STRESS: X-RAY
CY8CTMA616AA2 (8A3866HB) AZ100 3751070 611802728 ASE-G COMP 15 0
CY8CTMA616AE2 (8A3866HB) AZ100 3751087 611802729 ASE-G COMP 15 0
CY8CTMA616AA2 (8A3866HB) AZ100 3751099 611802730 ASE-G COMP 15 0
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Document No.002-24180 Rev. **ECN # 6201199
Document History Page
Document Title: QTP#174308: AUTOMOTIVE 100-LEAD TQFP (14x14x1.4mm) PURE SN LEADFINISH, AUWIRE MSL3, 260C REFLOW ASEK-TAIWAN (G)
Document Number: 002-24180
Company ConfidentialA printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 9 of 9
Rev. ECNNo.
Orig. ofChange
Description of Change
** 6201199 HSTO Initial spec release
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Item Marketing Part Number Sample Order Part Number
1 CY8C3666AXA-052 CY8C3666AXA2-052; Subject to lead time
2 CY8CTMA616AA-12 CY8CTMA616AA2-12;
3 CY8CTMA616AA-12T CY8CTMA616AA2-12;
4 CY8CTMA616AA-13 CY8CTMA616AA2-13; Subject to lead time
5 CY8CTMA616AA-13T CY8CTMA616AA2-13; Subject to lead time
6 CY8CTMA616AA-22 CY8CTMA616AA2-22;
7 CY8CTMA616AA-22T CY8CTMA616AA2-22;
8 CY8CTMA616AA-23 CY8CTMA616AA2-23; Subject to lead time
9 CY8CTMA616AA-23T CY8CTMA616AA2-23; Subject to lead time
10 CY8CTMA616AE-12 CY8CTMA616AE2-12;
11 CY8CTMA616AE-12T CY8CTMA616AE2-12;
12 CY8CTMA616AE-13 CY8CTMA616AE2-13;
13 CY8CTMA616AE-13T CY8CTMA616AE2-13;
14 CY8CTMA616AE-22 CY8CTMA616AE2-22; Subject to lead time
15 CY8CTMA616AE-22T CY8CTMA616AE2-22; Subject to lead time
16 CY8CTMA616AE-23 CY8CTMA616AE2-23; Subject to lead time
17 CY8CTMA616AE-23T CY8CTMA616AE2-23; Subject to lead time
18 CY8CTMA884AA-12 CY8CTMA884AA2-12; Subject to lead time
19 CY8CTMA884AA-12T CY8CTMA884AA2-12; Subject to lead time
20 CY8CTMA884AA-13 CY8CTMA884AA2-13; Subject to lead time
21 CY8CTMA884AA-13T CY8CTMA884AA2-13; Subject to lead time
22 CY8CTMA884AA-22 CY8CTMA884AA2-22;
23 CY8CTMA884AA-22T CY8CTMA884AA2-22;
24 CY8CTMA884AA-23 CY8CTMA884AA2-23; Subject to lead time
25 CY8CTMA884AA-23T CY8CTMA884AA2-23; Subject to lead time
26 CY8CTMA884AE-12 CY8CTMA884AE2-12;
27 CY8CTMA884AE-12T CY8CTMA884AE2-12;
28 CY8CTMA884AE-13 CY8CTMA884AE2-13; Subject to lead time
29 CY8CTMA884AE-13T CY8CTMA884AE2-13; Subject to lead time
30 CY8CTMA884AE-22 CY8CTMA884AE2-22; Subject to lead time
31 CY8CTMA884AE-22T CY8CTMA884AE2-22; Subject to lead time
32 CY8CTMA884AE-23 CY8CTMA884AE2-23;
33 CY8CTMA884AE-23T CY8CTMA884AE2-23;
34 CG8895AT CG8895XT; Subject to lead time
35 CG8895ATT CG8895XT; Subject to lead time
36 CP7525AT CP7525XT; Subject to lead time
37 CP7529AT CP7529XT; Subject to lead time
38 CP7533AT CP7533XT; Subject to lead time
39 CP8085AT CP8085XT;
40 CP8085ATT CP8085XT;
41 CP8143BT CP8143XT;
42 CP8143BTT CP8143XT;
43 CP8143DT CP8143YT; Subject to lead time
44 CP8143DTT CP8143YT; Subject to lead time
45 CP8143FT CP8143YT; Subject to lead time
46 CP8143FTT CP8143YT; Subject to lead time
47 CP8184BT CP8184XT; Subject to lead time
48 CP8184BTT CP8184XT; Subject to lead time
49 CP8361BT CP8361XT;
50 CP8361BTT CP8361XT;
51 CP8428AT CP8428XT;
52 CP8428ATT CP8428XT;
53 CP8429AT CP8429XT;
54 CP8429ATT CP8429XT;
55 CP8531AT CP8531XT;
56 CP8531ATT CP8531XT;
26403-PSoC3_Customer_Char_Report.pdfTable of ContentsIntroductionCharacterization Hardware and SetupElectrical SpecificationPackageDocument HistoryIntroduction1 General DescriptionDatasheetReference Documents and Application NotesQualification ReportPin ListThe Pinout diagram of the available package is shown below.48 - Pin SSOP and 100 Pin TQFP part pinout.1.0 Characterization Hardware and SetupDC Measurement System and HardwareTemperature Forcing SystemTest Conditions2.0 Characterization DataAbsolute Maximum RatingsDevice Level Specification: N/APower Regulators: N/AGPIO DC SpecificationsGPIO AC SpecificationSIO DC SpecificationSIO AC SpecificationXRES DC SpecificationXRES AC SpecificationAnalog Peripherals: N/ADigital Peripherals: N/AMemory: N/APSoC System Resources: N/AClocking: N/A3.0 PackagingPackage CharacteristicsSolder Reflow Peak Temperature48 pin SSOP O483 Package Outline, 51-85061100 pin TQFP (14 x 14 x 1.4 mm) A100SA Package Outline, 51-850484.0 Document History Page