pe 1o6 - ecsel ju 1 part 1 … · pe 1o6 silicon carbide single wafer epitaxial reactor danilo...

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PE 1 O 6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A.

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Page 1: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

PE 1O6

Silicon Carbide Single Wafer Epitaxial Reactor

Danilo Crippa, Director Innovation, LPE S.p.A.

Page 2: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

Historical facts1972

• Preti Engineering (now LPE) designed and manufactured the first silicon Epitaxial Reactor in Europe.

• Almost 50 years later LPE reactors are still the preferred tools to grow EPI layers for discrete and Power Applications.

• Approx. 400 reaction chambers for Silicon and Silicon Carbide epitaxy are in operation in more than 30 semiconductor companies.

19-20/06/2018 ECSEL JU Symposium 2

Page 3: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

Actual facts• LPE Italy

• Product development: Milan

• Process development: Catania

• LPE China: Sales and Technical service

• Employees

• 60 people world wide

• 10 people in Innovation

19-20/06/2018 ECSEL JU Symposium 3

Page 4: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

The opportunity: Silicon carbide

19-20/06/2018 ECSEL JU Symposium 4

Page 5: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

An exploding market

19-20/06/2018 ECSEL JU Symposium 5

Page 6: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

Silicon Carbide• Started R&D activities in 2001

19-20/06/2018 ECSEL JU Symposium 6

…lost in the DEATH VALLEY

• ENIAC 2009 call: the PO for the project LASTPOWER was presented

• Moving slowly in R&D for 8 years

• Sold three systems in Japan for R&D and Process development

Page 7: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

ENIAC - LASTPOWER• Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER

device applications: LAST POWER

• Start: 01.04.2010 – End: 30.09.2013

• 13 Partners: 2 LE – 4 SME – 7 RE from 6 Countries

• Scope: Development of equipment, materials and devices for SiC and GaN

• Budget: 16M€

• Goal for LPE: Development of an epitaxial reactor for Silicon Carbide for pilotlines and pre-production

19-20/06/2018 ECSEL JU Symposium 7

Page 8: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

PE 1O6

• Single wafer SiC epitaxial Reactor

• Adoption of Chlorinated chemistry

• Growth rate 10x higher

• 150mm diameter

• > 100µm epi thickness

• Fully automated using robot

• First on the market having above features

19-20/06/2018 ECSEL JU Symposium 8

Output of LASTPOWER

Page 9: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

….then?

19-20/06/2018 ECSEL JU Symposium 9

DEATH VALLEY

wascrossed

Page 10: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

…what next?• Historical Average sales : 20 M€

• 2018 Guidance : 40-50 M€

• Silicon vs SiC share forecast : 70/30

• Expected significant SiC sales after 2020, with peak in 2023

19-20/06/2018 ECSEL JU Symposium 10

Page 11: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

Future activities in Silicon Carbide

• PE 1O6• Automated Cassette-to-Cassette

• Continuous Improvement Program

• ECSEL project: REACTION• Start: November 2018

• LPE Object: Development of a 200mm epitaxial reactor for silicon carbide

19-20/06/2018 ECSEL JU Symposium 11

Page 12: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

End of the story:

and….

19-20/06/2018 ECSEL JU Symposium 12

Page 13: PE 1O6 - Ecsel Ju 1 PART 1 … · PE 1O6 Silicon Carbide Single Wafer Epitaxial Reactor Danilo Crippa, Director Innovation, LPE S.p.A

Grazie

19-20/06/2018 ECSEL JU Symposium 13