phill mai, jem america corp. (presenter) shin …swtw 2002 probing for the 21st century memoryfine...

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Probing for the 21 st century SWTW 2002 Phill Mai, JEM America Corp. (Presenter) Shin Kozaki, JEM Japan Teru Sakata, JEM Japan Kaz Okubo, JEM America Corp.

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Page 1: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

Phill Mai, JEM America Corp. (Presenter)Shin Kozaki, JEM JapanTeru Sakata, JEM JapanKaz Okubo, JEM America Corp.

Page 2: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

Roadmap HAWK Concept Electrical and Mechanical Data Maintenance Specifications Summary

Page 3: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

Memory Fine Pitch

Area Array

HF 1-10 GHz

Para-metric

Wafer- level

burn-in

Epoxy

VSCC

HAWK

VCPC

Coax Probe

Page 4: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

50

70

90

110

130

150

2001 2002 2003 2004

Year

Pitc

h (

m)

VCPC (64 Die)

Epoxy (32 Die)

HAWK (128 Die)

Page 5: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

Smaller pitch Lower probe force Individually-replaceable probes Improved DUT layout flexibility Fewer cleanings Higher bandwidth

Page 6: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

Page 7: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

PCBTop Stiffener

Guide Plate Bottom StiffenerSpace Transformer

Planarization Spring

Probe

Page 8: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

10 um

Page 9: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

Release

Over Drive

Page 10: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

0

1

2

3

4

OD25 OD50 OD75

Overdrive (µm)

Prob

e Fo

rce

(gf)

MaxMinAvg

Page 11: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

22

10

28

11

50 µm OD 70 µm OD

Page 12: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

-20

-15

-10

-5

0

5

10

15

20

-20 -15 -10 -5 0 5 10 15 20X-Deviation (µm)

Y-D

evia

tion

( µm

) 1K300K

TEST CONDITIONS

Temp : 100oCOD : 70 umLoad : 50mA; 10 msPad : Al-Cu

Page 13: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

-30-20-10

0102030

0 25 50 75 100Pin No.

Plan

arity

(µm

) INT300K TEST CONDITIONS

Temp : 100oCOD : 70 umLoad : 50mA; 10 msPad : Al-Cu

Page 14: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

0

5

10

15

0 20 40 60 80 100

Overdrive (µm)

CR

ES ( Ω

) TEST CONDITIONS

Temp : 100oCOD : 10 - 80 umLoad : 50mA; 10 msPad : Al-Cu

max

avg.

min

Page 15: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

0

2

4

6

8

10

0 2000 4000 6000 8000 10000

Touchdowns

CR

ES

)

MAXMINAVG

TEST CONDITIONS

Temp. : 90 °COD : 60 umLoad : 50mA; 10 msPad : Al-CuNo cleaning

Page 16: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

0

1

23

4

5

6

78

9

10

1 2500 5000 2500 5000 2500 5000 2500 5000 2500 5000

Touchdowns

CR

ES

)

Cleaning

Page 17: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

5K TD Clean 5K TD70µm OD / 85 °C / Al-Cu

Clean 5K TD Clean 5K TD Clean

Page 18: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

INT 500TD 1000TD 5000TD

One cycle of 10 touchdowns on the cleaning sheet is repeated 500 times.

==> Probe tip wear is relatively little.

Page 19: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

Minimum Pitch : 80 µm

Probe Force : 2.8 gf @ 70 µm OD

Max. Scrub Mark : 30 µm

Alignment : ±10 µm

Planarity : ±10 µm

Tip Shape : Flat-top pyramid

Tip Size : 10±5 µm

Tip to Guide Plate : 750 µm

Max. Current : 250 mA (continuous)

Page 20: Phill Mai, JEM America Corp. (Presenter) Shin …SWTW 2002 Probing for the 21st century MemoryFine Pitch Area Array HF 1-10 GHz Para-metric Wafer- level burn-in Epoxy VSCC HAWK VCPC

Probing for the 21st centurySWTW 2002

New solution for highly-parallel memory.

Fine pitch.

Easy to repair.

Uniform probe shape.

In use at multiple production sites.