physics manual -2

7/30/2019 physics manual -2

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THADOMAL SHAHANI ENGINEERING COLLEGE

BANDRA(W), MUMBAI 400050

*CERTIFICATE*

Certify that Mr/Miss_________________________________ of F.E. (Sem-I)

Batch: ____ Roll No: ____ has completed the necessary experiments in Applied

Physics-1under my supervision in Thadomal Shahani Engineering College

Laboratory in the year 2012-2013.

Teacher In-Charge Head of the Department

Date:________________


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APPLIED PHYSICS

JOURNAL


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APPLIED PHYSICS SECTION

SEM-1 F.E 2012-2013

INDEX

Sr .No Experiment Date Sign

1 CRYSTAL STRUCTURE-1

2 CRYSTAL STRUCTURE-2

3 MILLER INDICES

4 P-N JUNCTION CHARACTERISTICS



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F.E SEM-1

ROLL NO: BATCH:

NAME: EXPERIMENT NO:1

CRYSTAL STRUCTURE-1

Aim: To study unit cell structure using cubic models.

Apparatus: Scaled models of S.C., B.CC, F.CC CRYSTAL STRUCTURES.

Diagrams:

a) Simple cubic structure

b) Body Centered cubic structure


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c) Face Centered cubic structure

d) NaCL Crystal Structure

e) Diagrams illustrating Packing Fraction


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Theory:


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Observation Table:

1) To find out No. of atoms/Unit cell

E OF CRYSTAL

No. of atoms at

corner

Nc

No. of atoms on

face

Nf

No. of atoms at

center

Nb

Total No. of atoms

in unit cell

N=NC/8+NF/2+NB/1

ple cubic

y centered

e Centered

2)To find out Packing Fraction & Co-ordination number

E OF

STAL

Volume of unit cell

Vc

Atomic Radius

(r)

Packing Fraction CO-ORDINATION

NUMBER

ple cubic

y

tered

e

tered


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Formula and Calculation:

Packing Fraction= Volume of atom X No. Of Atoms per unit cell

Volume of Cell

For Sc r = a

For Bcc r= a

For F.C.C r= a

Result:

Packing Fraction for S.C=

Packing Fraction for B.C.C.=

Packing Fraction for F.C.C.=

Date: Signature

Batch in-Charge


9/19



F.E SEM-1

ROLL NO: BATCH:


CRYSTAL STRUCTURE-2

Aim: To study unit cell structure using cubic models.

Apparatus: Scaled models of HCP CRYSTAL STRUCTURE.

Diagrams:

a) HCP structure


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Theory:


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Formula and Calculation:

Packing Fraction= Volume of atom X No. Of Atoms per unit cell

Volume of Cell

For HCP r = a

Result:

Packing Fraction for H.C.P.=

Date: Signature

Batch in-Charge


12/19



F.E SEM-1

ROLL NO: BATCH:


MILLER INDICES

Aim: To find miller indices of important planes in Simple Cubic, B.C.C, and F.C.C. Structure and find inter-planar

distance.

Apparatus: Scaled models of S.C., B.CC, F.CC CRYSTAL STRUCTURES.

Diagrams:(For surface, triangular, diagonal plane system)

a) Simple cubic structure

b) Body Centered cubic structure

c) Face Centered cubic structure


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Theory:


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Observations:

Sr

No

Type of

cell

Type of

Plane

Intercepts

lx ly lz

Numerical

Parameters

p q r

Miller

indices

h k l

Dnkb=

a/(h2+k2+l2)

Ratio of

Spacing

1 S.C surface

S.C Triangular

diagonal

S.C Diagonal

triangular

2 B.CC surface

B.CC diagonal

B.CC triangular

3 F.C.C surface

F.C.C diagonal

F.C.C triangular

Conclusion: Ratio of spacing for Crystal structure is observed as

____________ forS.c, ____________ for B.C.C & ____________ for F.C.C.

Date:

Signature

Batch in-Charge


15/19



F.E SEM-1

ROLL NO: BATCH:


P-N junction characteristics

Aim: To study characterisitics of the P-N junction diode

Apparatus: Junction Diode(1N4007),VARIABLE Power supply, Rheostat,Digital

Multimeter ,milliammeter, volt meter, connecting wires etc.

Circuit diagram:

Forward Bias:

Reverse Bias:


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Theory:


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Procedure:

For Forward Bias

1)With help of mutimeter, adjust Power supply voltage between 2.5 to 3 Volts.(use multimeter in the voltage

mode).

2)Connect the circuit as shown in circuit diagram(a).

3)Set the rheostat variable terminal near negative(Ground terminal).

4)Insert Key-Plug in key to switch ON the circuit.

5)With the help of rheostat go on adjusting the voltage in suitable steps till

Current attains measurable value in milliammeter. Once u get

Measurable current In each miiliammeter;Increase the current by varying the

Rheostat such that current varies by every measurable division. Note

Down voltage value for each current step.Continue till current reaches

Around 50 tp 80 mAmps.

6)Plot a graph drawn find out Static Resistance of Diode,Dynamic

Resistance of Diode, Knee Voltage.

For Reverse Bias

8)With help of mutimeter, adjust Power supply voltage between 10 to 12 Volts.(use multimeter in the voltage

mode).

9)Connect the circuit as shown in circuit diagram(b).

10)Set the rheostat variable terminal near negative(Ground terminal).Insert Key-Plug in key to switch ON the

circuit.

11)With the help of rheostat go on adjusting the voltage in suitable steps till

Current attains measurable value in microammeter. Once u get

Measurable current In each microammeter;Increase the current by varying the

Rheostat such that current varies by every measurable division. Note

Down current value for each voltage step.Continue till voltage reaches to maximum value

6)Plot a graph drawn of Current vs Voltage by using appropriate scale in the Third Quadrant of the

Graph paper.


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Observation Table

Forward Bias: Reverse Bias:

Sr No Voltage

V

Current

mAmp

Sr.No. Voltage

V

Current

amp


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From graph:

Calculation for static resistance:

Calculation for Dynamic Resistance:

Result: Forward static resistance of diode=

Dynamic Resistance of diode=

Knee Voltage=

Date: Signature

Batch in-Charge

physics manual -2

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