Physics ofSemiconductor Devices

EDITOR

Krishan Lai

UB/TIB Hannover111 897 173

89

Narosa Publishing HouseNew Delhi Madras Bombay Calcutta

CONTENTS

Preface m

DEVICE PHYSICS OFHETEROSTRUCTURES AND QUANTUM DEVICES1. Stabilty and performance of GeSi

heterostructures bipolar transistors "S. C. Jain, A. H. Harker and A .M. Stoneham

2. Device models for HBT circuit simulationD. L. Pulfrey 1 0

3. Carrier transport parameters in strainedSiGe alloys I8

A. Nathan and T. Manku

4. Two-dimensional carrier transport in Si/SiGemodulation doped structures grown by 26RTCVDV. Venkataraman, C. W. Liu and J. C. Strum

5. Quantum derivation of the mean forces ,acting in non-uniform or graded structures, 29and of transport expressions usingEhrenfest's canonical relationsC. M. Van Vliet, J.J Nainaparampil and A.H.Marshak

6. Competing hot electron resistanttechnologies in submicron arena ""W.S. Khokle, P.N. Andhare, R .K. Nahar, SureshChandra, 0. P. Wadhawan and P. D. Vyas

7. High-mobility p-channel MOSFET onstrained Si *°Deepak K. Nayak

8. N-channel MOSFET model for hightemperature applications "2K. S. Yadav, M. S. Tyagi and W. S. Khokle

9. Effect of substrate temperature and laserpower on recrystallization of polysilicon SOI ""films for CMOS circuitsSudhir Chandra, S. C. Rustagi, Ami Chand and G.Bose

10. On measurement of threshold voltage andmobility in polysilicon thin film transistors "°S. C. Rustagi, Ami Chand and Sudhir Chandra

11. Effect of post-implant annealing on MOSFET g2parameters in SIMOX structuresAmi Chand, Sudhir Chandra and S. C. Rustagi

12. A simplified approach to failure analysis of 65DRAMSSharon O'Boyle, Shobha Gupta

13. Early voltage of parasitic lateral bipolar 68transistor and its effect on latch-up behaviorin VLSI CMOS technologyA. Bandyopadhyay, A. B. Bhattacharyya, P. R.Verma, R. Kumar and M. J. Zarabi

14. Accelerated life testing: a study of the 71validity of theoretical modelsJiju Antony, John G. Roche and Shobha Gupta

15. Drain induced barrier lowering in short 76channel NMOS devicesS. Gurunarayanan, R.Mehrotra andChandrashekhar

16. Optimization of tub design in twin-well based 77CMOS processJ. N. Roy and Vinod Chaku

17. Growth and characterisation of III-V 80epitaxial layers by MOVPES. K. Agarwal, M. V. G. Padmavati and R. Tyagi

18. Variation of uniformity of MESFET s 88threshold voltage and mapping of EL2 levelusing photoluminescence imagingP. Santhana Raghavan, J. Arokiaraj, J. Kumarand P. Ramasamy

19. Device characteristics of a superconducting 91field effect transistor using AlGaAs/GaAs2DEGSeongjae Lee, Kyoung Wan Park, Mincheol Shin,and El-Hang Lee

20. New constructions of phototransformers on 94(Al, Ga) As heterostructuresV. Dorogan, V. Kosyak, T. Vieru

21. Computer aided study of excess noise in 97GaAs APD with differnt crystal orientationsJ. K. Miflhra, G. N. Dash and S. P. Pati

22. Semiconductor quantum heterostructures :will they be useful for future lightwave l̂ Ocommunications and informationtechnology?El-Hang (Howard) Lee

23. Quantum waveguide structures anddiscontinuities 1 1 8

A, weisshaar, S. M. Goodnick, V. K. Tripathi,J. C. Wu and M. N. Wybourne

24. Nanoelectronic devices and integratedcircuits based on effect of resonant tunnelingV. G. Mokerov, B. K. Medvedev, B. G. Nalbandov,S. S. Shmelev, D. Posyjanski

25. Modelling of excitonic electrorefraction inmultiple quantum wells and design of adirectional coupler with low voltage lengthproductP. K. Basu and A. Bandyopadhyay

26. Growth and characterisation of GaAs/GaAlAssingle quantum well laser structure by metal-organic vapour phase epitaxyR. Tyagi, M. V. G. Padmavati, M. Bal, G. D.Sharda, A. Dhaul, R. K. Purohit and S. K.Agarwal

27. Bang-edge photoluminescence ofSiGe/strained-Si/SiGe type-II quantum wells 1 3 6

on Si(100)D. K. Nayak, N. Usami, H. Sunamura, S. Fukatsuand Y. Shiraki

ADVANCED DISCRETE DEVICES

1. Ideal SIT; ballistic deviceJun-Ichi Nishizawa and Ken Suto ^

2. Electronic interference effects in the ballisticconductivity of one- and two-dimensional j.48structures on the basis of quantum wellsV. A. Petrov and I. M. Sandier

3. Physics based limitations of conventionalGummel-Poon SPICE CAD models for 1 5 1

advanced bipolar transistorsD. J. Roulston

4. Intense light emission in diffused porussilicon junctions ^gyV. K. Jain, Amita Gupta, Adarsh Kumar, G. K.Singhal and Vikram Kumar

5. Light emitting diodes of porus silicon 164Amita Gupta, V. K. Jain, Adarsh Kumar, G. K.Singhal, D. S. Ahuja, 0. P. Arora, P. P. Puri andMahender Pal

6. Multifunctional photosensor for image Iggprocessing on the basis of photoelectricstructures 'with memoryS. L. Vinogradov, V. V. Vologin and V. E. Shubin

7. A novel uncooled MCT detector for broad \7\range IR applicationR. K. Sharma, D. Verma, A. Dhar, J. P. Singh ,V.K. Singh and B. B. Sharma

8. Blocked impurity band IR dectectors 173A. N. Chandorkar and Sudha V. Kolluri

9. High performance InGaAs/InP PIN 186phot ode tec tors using magnetron sputteredSiO2 as diffusion mask0. P. Daga, D. C. Dumka, J. K. Singh, H. S.Kothari, S. Ahmad and B. R. Singh

10. Grided Pd/TiOs MOS capacitor for organic IggvapoursLallan Yadava, R. Dwivedi and S. K. Srivastava

11. Material prepration for semiconductor gas 192sensor applicationM. H. Madhusudhana Reddy and A. N.Chandorkar

12. A smart semiconductor silicon pressure 195sensorV. R. Singh, Shikha Bhatnagar, Sunita Verma andRanvir Singh

13. Band splitting in hi-frequency GaAs DDRs iggdue to diffusion currentG. N. Dash, S. P. Pati and A K. Panda

14. Composite YjOj/SiO, dielectric based metal- 201insulator-semiconductor diodes for highdensity memory device applicationR. N. Sharma and A.C. Rastogi

15. GaAs based analog to digital converter for 204GHz applicationsHarsh, Samudra Gupta, Meena Mishra, R. K.Purohit and Ishwar Chandra

CHARACTERIZATION OFSEMICONDUCTING MATERIALS, UNITPROCESSES AND DEVICES

1. High resolution X-ray diffractioncharacterization of process induced defectsin semiconductor crystalsKrishan Lai

2. Conditions for improving the properties ofthe Si/SiO2 system by F-implantation 2 1 9

P. Balk, V. V. Afanas'ev and J. M. M. de Nijs

3. Interaction of atomic hydrogen with defectsin silicoiS. Ashok

4. Ultrathin bond and etchback silicon on

in silicon processing

insulator (BESOI) for CMOS applications 2 3 2

Subramanian S. Iyer, Philip M. Pitner, Manu J.Tejwani and Thomas 0. Sedgwick

5. Characterization of semiconductor devicesvia line-modified asymmytric crystaltopographyW. T. Beard, Jr., W. G. Hutchison, R. W.Armstrong, X. J. Zhang, J. L. Fitz and J .K.Whisnant

6. Double crystal X-ray topographycharacterization of an electrical bias inducedstress variation in nMOSFETsDavid I Ma, Syed B. Qadri, Daniel McCarthy andMartin C. Peckerar

7. Spectroscopic elipsometric studies of metalsilicide thin filmsV. D. Vankar and G. Srinivas

8. Studies on the conductivity of heavily dopedLPCVD polysilicon films 2 7 1

K. N. Bhat and P. Venugopal

9. Preparation and characterization of highpurity chemicals used in fabrication ofsemiconductor devicesP. K. Gupta, A.K. Agrawal, R. Ramachandran,Chetna Kaw, Sunita Ganju, A.K. Sarkar andKrishan Lai

10. EPR Studies of paramagnetic defects in 2g7semiconducting materialsS.K. Gupta

11. Inductively coupled plasma optical emission 095spectrometric method for determination ofarsenic in ppb range in high purity siliconP. K. Gupta, A.K. Agrawal, Chetna Kaw andKrishan Lai

12. Indirect determination of traces of boron in . „ .high purity silicon by Zeeman graphitefurnace atomic absorptionspectrophotometerAjit K. Sarkar, N. Singh, D. C. Parashar andKrishan Lai

13. An extraction method for determination of „..phosphorus by spectrophotometry in highpurity materials used in semi-conductortechnologyR. Ramachandran, Deepa Bhatnagar and D. C.Parashar

14. Evaluation of trace quantities of moisture in „„.photoresists and chemicals used inprocessing of semiconductor devicesP. K. Gupta, A. K. Agrawal, Chetna Kaw, SunitaGanju and Krishan Lai

15. Polarised specular reflectance and „_„transmittance measurements of silicon andgermanium in the infrared regionD. Gupta and S. P. Varma

16. Energy gap studies by reflection spectra OIQT. P. Sharma, Sachin Kr. Sharma and CibyThomas T.

17. Methods to restore the surface properties of „-.„silicon subjected to RIEV. K. Bhasin, K. Remashan, P. R. S. Rao and K.N. Bhat

18. Dry cleaning of silicon wafers with CF4/H2 3 1 gPlasmaH. N. Upadhyay, R. K. Chanana, R. Dwivedi andS. K. Srivastava

19. Characterization of defects generated by BF2* „.„implantation in silicon single crystals byhigh resolution X-ray diffractionG.Bhagavannarayana , Krishan Lai

20. Kelvin probe setup for semiconductor 322surface work function studiesC. Suresh Kumar, A. Subrahmanyam and J. Majhi

21. Formation of the oxide films on silicon in RF 325oxygen plasmaB.C. Chakravarty

22. Optimization of growth conditions of dry 32gthermal oxides for radiation hardapplicationsM. H. Madhusudhana Reddy and D. K. Sharma

23. Radiation performance of reoxidized nitrided go,pyrogenic oxide as a field dielectricS. S. Moharir and R. Lai

24. Low temperature deposition of amorphous 33^silicon nitride thin films by photo-CVDprocessV. K. Rathi, Vijay Shanker and O.P. Agnihotri

25. Characterization of silicon wafers with thin 33-7nitride-oxide films regarding crystallineperfection and biaxial stressS.K. Haider, Vyay Kumar, Krishan Lai, P.Suryanarayana, B.B. Dixit and P.D. Vyas

26. Study of biaxial stress and crystalline 34Qperfection of device quality silicon waferswith photo-CVD grown thin oxide andoxinitride depositsS.K. Haider, Vijay Kumar, Krishan Lai, VipanKumar and O.P. Agnihotri

27. Physical model for electron trap generation 3^3in the MOS oxides stressed at high fieldsR. M. Patrikar, R. Lai and J. Vasi

28. Study of hole trapping in thin silicon dioxide 34gunder radiation environmentB.M. Deb and A. N. Chandorkar

29. Trap generation upon irradiation in 35Qreoxidized nitrided oxide gate dielectricsA. Mallik, V. Ramgopal Rao, AN. Chandorkar andJ. Vasi

30. Hole traps in reoxidized nitrided oxide gate 3g^dielectricsA. Mallik, J. Vasi and A. N. Chandorkar

31. A new technique for reduction of bending of „__device quality silicon single crystals bypassage of electric currentKrishan Lai, S. Niranjana N. Goswami and PeterThoma

32. Anomalous hysteresis in electrical „„.conduction of amorphous BaTiO3 filmsdeposited by RPIB techniqueS.T. Lakshmikumar, W. T. Liu and T -M. Lu

33. A study of boron doped polysilicon gate . „ .capacitanceSuresh Chandra and P.N. Andhare

34. Temperature dependance of minority carrier „„„lifetime in some polysiliconV. Subramanian and J. Sobhanadri

35. Phosphorus dopant profiles and diffusion „ . .coefficients in silicon -when diffused throughLPCVD polysilicon layerA. V. N. Tilak and K.N. Bhat

36. Determination of biaxial stress in sUicon _„„single crystals with thin molybdenum silicidefilms by using high resolution X-raydiffractionKrishan Lai, Reshmi Mitra, V.D. Vankar and G.Srinivas

37. Spectroscopic ellipsometry and high „ „resolution X-ray diffraction studies ofmicrostructural pecularities on molybdenumsilicide thin filmsG. Srinivas, Reshmi Mitra, V.D. Vankar andKrishan Lai

38. Process and material properties of ___magnetron sputtered W and reaction formed

Awatar Singh and Krishan Lai

39. On the self limiting thickness of CVD „„tungsten films produced by silicon reductionofWFe

K.M. K. Srivatsa, B. B. Dixit, V.P. Deshwal, P.Suryanarayana, G. Eranna, B.C. Joshi, R. S.Sheoran, P.D. Vyas and W.S. Khokle

40. Analytical approach to determine specific „_ .contact resistanceB.D. Tyagi

41. Contact resistance improvement by barrier 387metal and salicide technologyJ.N. Roy, D.K. Datta, R.Rajagopal, Vinod Chakuand D.Dev

42. Analysis of interconnect delay for VLSI 390metallizationR.K. Nahar, P.D. Vyas and R. Shekhawat

43. Molybdenum nitride thin film diffusion 393barrier for silicon metallizationAnitha V.P., Nitin G. Patil and S.Major

44. Deep donor (DX) defects in III-V ternary 396alloysJ.C. Bourgoin and M. Zazoui

45. Photoluminescence studies of defects in 402semiconductorsVikram Kumar

46. Laser deposition of dielectrics, 409semiconductors and conductors on GaAs andInPD.N. Bose and S. Ghosh

47. A synoptic study of the physical constants of 416III-V compoundsB.R. Nag

48. The role of unprecracked arsine and 424monoethylarsine in growing low carbonGaAs epilayers by CBE usingtrimethylgallium and triethylgalliumSeong-Ju Park, Jeong-Rae Ro, Jae-Ki Sim and El-Hang Lee

49. High resolution X-ray diffraction study of 427cellular structure in LEC grown galliumarsenide crystals and biaxial stress inducedby multilayer metallizationS. Niranjana N. Goswami, Krishan Lai, JoachimWurfl and H.L. Hartnagel

50. Deep level due to Si-related DX center in 431heavily doped ion-implanted GaAsSubhasis Ghosh and Vikram Kumar

51. Application of modified spreading resistance 434technique to profile GaAs epitaxial layersHarsh, S.K. Agarwal and M. Hussain

xui

52. On the intracenter transitions in Fe doped in ^ggGaAs and InPHarish Bahadur

53. New peculiarities of the conductivity 44^compensation in semi-insulating InPCalin M.V., Pyshnaya N.B., Tiginyanu I.M. andUreaki V.V.

54. A novel technique for suppressing A A,phosphorus loss from InP surface duringplasma hydrogenationSathya Balasubramanian and Vikram Kumar

55. X-ray photoelectron spectroscopy (XPS) 447studies of InP surfaceP. Manivannan and A. Subrahmanyam

56. Photoluminiscence studies and fabrication ofmetal-insultator-semiconductor structure onLEC grown InPJ. Arokiaraj, S. Arulkumaran, P. SanthanaRaghavan, M. Udhaya Sankar, J. Kumar and P.Ramasamy

57. Mechanism of self diffusion in InSb single 453crystalsAnjali Rastogi and K. V. Reddy

58. Effect of vacuum and Cd-annealing on the >gcsurface morphology and deep levelphotoluminiscence of bulk undoped CdTeSuma Gurumurthy, H. L. Bhat, A. K. Sreedhar,R.K. Bagai and Vikram Kumar

59. Reduction of the residual acceptor i.nconcentrations in GaSbP.S. Dutta, H.L. Bhat, K.S. Sangunni and VikramKumar

60. A novel spectroscopic technique for ^godetermining capture cross-section activationenergy of Si-related DX center in AlxGa, ,AsSubhasis Ghosh and Vikram Kumar

61. Nucleation studies of InGaAs LPE on InP 4 6 gR. Jothilingam, R. Dhanasekaran and P.Ramasamy

62. Electrical and photoluminescence studies ofInGaAs/InP grown by chloride vapour phaseepitaxy techniqueRamjay Pal, R.K. Purohit, S.K. Agarwal and D.N.Bose

63. Deep level transient spectroscopy studies onDy gettered In,^ Ga^^Ag ^71D. Pal and D.N. Bose

64. Morphological and compositional studies ofoval defects in AlGaAs through RamanspectroscopyP.S. Dobal, P.K. Khulbe, H.D. Bist, S.K. Mehtaand R.K. Jain

65. Photoluminiscence studies on hydrogenatedGaAlAs grown by MBE 4 7 7

S.K. Mehta, T. Srinivasan, G.C. Dubey and R.K.Jain

6 6 . A n o d i c s u l p h i d e f i l m s o n g ^ ^V.K. Gandotra and S.C. Gupta 4S0

67. Electron optical studies on thin films of thesemiconducting alloy Ga6Se20Te711 ***"V. Damodara Das, K. S. Raju and A, Bhaskaran

68. Electrical resistance variation withtemperature and thickness and Seebeckcoefficient in vacuum-deposited thin films of1% Pb doped PbSeojjTeoj, alloyV. Damodara Das, B. Sivagnanam and P. GopalGanesan

69. Size dependence of electrical resistivity andthermoelectric power in Pbo^Sn^Te thinfilmsV. Damodara Das and C. Bahuleyan

70. Preparation of Pb,.,Eu,Se thin films by co-evaporation technique ^92P. C. Sharma, U.C. Sinha and A. N. Chandorkar

71. Electrical resistance variation and opticalabsorption in 2% indium doped 496CdSe(0,5)Te(0.5) thin filmsV. Damodara Das, K. Rajesh Nayak andLaxmikant Damodare

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72. Grain boundary effect in polycrystalline 499CuInSe2 filmsR. Pal, K.K. Chattopadhyay, S. Chaudhuri andA.K. Pal

73. Defect density in 75 MeV Ni ion bombarded 502amorphous semiconductorsK.L. Bhatia, P. Singh, Nawal Kishore and M.Singh

74. On the validity of Vegard's law in selenium 505tellurium filmsS.K. Sharma, Sachin Kumar Sharma and T.P.Sharma and S.C.K. Mishra

75. Structure, dielectric, conduction and 508breakdown studies on amorphous Ge^Se,.,thin filmsN. Balasundaram, D. Mangalaraj, Sa. K.Narayandass and C. Balasubramanian

76. Study on aluminium - antimony alloy films 5HTaminder Singh, Surinder Kaur and R.K. Bedi

77. Identification of defects induced on thermal 514oxidation of Cu j.9Se thin filmsS.K. Gupta and G.K. Padam

78. X-ray study of alpha GajSe3 517M.Y. Khan and Momeen

79. Structural, optical and electrical properties 520of cadmium oxide films deposited by spraypyrolysisK. Gurumurugan, D. Mangalaraj, Sa. K.Narayandass and C. Balasubramanian

80. Diamond films produced by D. C. plasma 523decomposition of CO2+H2

K.K. Chattopadhyay, S. Chaudhuri and A.K. Pal

81. Hot carrier and Fowler-Nordheim stress in 526sub-micron MOS transistorsC. R. Viswanathan

82. Microstructure and composition of 534semiconductor materials and efficiency ofthin film solar cellsM.S. Saidov

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83. The improvement of quality and reliability of 541semiconductor devices by pulse photonannealing and stimulated diffusion insemiconductorsT. Shishiyanu, I.K. Sinishchuk, V.P. Shontya, V.V.Cheban and S.T. Shishiyanu

84. CAD tool development for phase-shift mask 551designB.P. Mathur and K. I. Arshak

85. Properties of Cu and In selenide 554semiconductor thin films for solar cellapplication prepared by a newelectrochemical selenization techniqueArchana Garg, K.S. Balakrishnan, A.C. Rastogi,Rashmi and R.H. Bhawalkar

86. Electrical properties of mp*n Schottky diodes 557fabricated on silicon samples treated with H,plasmaB.P. Rai, R. Dwivedi and S.K. Srivastava

87. Physical nature and behaviour of spectral 5glreflectivity of Si-TiOx system on silicon solarcellsMohan Lai and Marek Lipinski

88. Electrical properties of GaSb Schottky diodes 554P.S. Dutta, H.L. Bhat, K.S. Sangunni and VikramKumar

89. Study of the effect of air corona stress on 557metal-oxide-semiconductor capacitorsIla Prasad and R.S. Srivastava

90. Semiconductive polymer thin films for 57Oelectronic applicationsS.C.K. Misra and Subhas Chandra

91. Rise and decay time kinetics of 573anthraquinone derivativesH.O. Yadav, P.K.N. Raghavan and T.S.Varadarajan

92. Characterization of chloro alumium 575phthalocyanine - metal contact by I-V and C-V methodsG.D. Sharma

xvu

93. Electron transport mechanisms in 580amorphous silicon Schottky barrier devicesMd. N. Islam, Y.N. Mohapatra, S.C. Agarwal andSatyendra Kumar

94. Effect of in-situ thermal relaxation on opto- 583electronic properties of hydrogenatedamorphous silicon film prepared in amultizone UHV plasma CVD systemO.S. Panwar, P.N. Dixit, B.S. Satyanarayan andR. Bhattacharyya

95. Subbandgap absorption studies on high rate 586deposited a-Si : H filmsC. Mukherjee, Tanay Seth, C. Anandan, P.N. Dixitand R. Bhattacharya

96. Effect of lithium doping on sub band gap 589absorption in hydrogenated amorphoussiliconS.K. Tripathi, Anil K. Sinha, S. Kumar and S.C.Agarwal

97. Thermally induced metastability in 59!}amorphous siliconS. M. Pietruszko

98. Metastabilities in undoped a-Si, xGe,: H alloys 595Anil K. Sinha, P. Agarwal, S. Kumar , S.C.Agarwal, P.N. Dixit, O.S. Panwar, Tanay Sethand R. Bhattacharya

99. Thermal equilibrium metastability studies in 598n-type a-Si : H under illuminationSushil Kumar, P.N. Dixit, O.S. Panwar, TanaySeth and R. Bhattacharyya

100. Evidence for tailstates assisted tunnelling 601currents in Schottky barriers on amorphoussiliconC. Anandan

101. Effect of quenching on thermo power of a-Si : 604HPratima Agarwal, P. Manoravi, P.N. Dixit, S.Kumar and S.C. Agarwal

102. Characterization of a-Si : H / a-C : H 607multilayer structureP.N. Dixit, Sushil Kumar and R. Bhattacharyya

FUTURISTIC DEVICES

1. Synchrotron X-ray diffraction fromnanocrystalline semiconductors underpressureSyed B. Qadri and Earl. F. Skelton

2. Lattice-mismatched epitaxy'materials anddevice aspectsA. Schlachetzki

3. Phenomenon of resist debris formation inelectron beam lithography and thefabrication of arrays of closely spaced metalquantum dotsP.R. Deshmukh, M. Singh, K.J. Rangra, P.D.Vyas, W.S. Khokle and B.B. Pal

4. Modelling of resonant tunneling effects inlaterally confined heterostructures atnanometer scales0. Vanbesien, D. Wojciechowski, V. Sadaune andD. Lippens

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621

629

637

AUTHOR INDEX 641