planar pixels sensors activities in france. phase-2 and core r&d activities in france...
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Planar Pixels Sensors Activitiesin France
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Phase-2 and core R&D activities in France
- Development of sensor simulations models- Sensor technology
Edgeless/active edge sensors Reduced thickness
- R&D on interconnections
- Test beam activities (M. Bomben ATLAS PPS testbeam coordinator)
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Device simulations Device simulations (Silvaco)General expertise in Silvaco 2D and 3DDevelopment of specific modelsWork to extend to n-in-p sensors the model of interface defect traps developed for n-in-n devices
Insertion of intermediate levels in the gap to reproduce theSi/SiO2 interface defects. After radiation and better describe the leakage current and breakdown behavior
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Good agreement with measurements on our n-in-p device production
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Silvaco 3D used to calculate the Ramo potentialfor the digitizer of present ATLAS n-in-n pixel
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“Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements”V. Chiochia et al., Nuclear Science, IEEE Transactions on , vol.52, no.4, pp. 1067- 1075, Aug. 2005
Activation energies as in EVL model
Since the present pixel detector is n-in-n bulk,Chiochia model instead of Pennicard used for radiation damage (Silvaco 3D)
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Simulation vs Chiochia 2005 results
M. Bomben - TCAD Simulations - 30/09/2013 - PPS meeting (LPNHE) 7
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Edgeless sensors
Deep trench diffusion(to prevent electricalfield on the damagedcut)
Cut line
Trench definition is critical:- aspect ratio: 20:1- deep etching: 200-230um- trench width: 8-12um
● Goal: make the rim zone equipotential● How: DRIE as for 3D process● Trench doped by diffusion
FBK/LPNHE sensors
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• n-in-p production on FZ, <100> Si
• 200 μm thick sensors produced in FBK cleanroom
– 500 μm thick support wafer (bonded by Sintef)
• pixel-to-trench distance as low as 100 μm
• aiming at intermediate pixel layer
• ~20 wafers produced• different p-spray dose
(low/high)• p-stop present/absent
Nucl. Instrum. Meth. Phys. Res. Sect. A 712, 41 (2013)
FBK/LPNHE active-edge sensor production
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• 6x30 matrices of FE-I4 pixels shorted together for IV, CV ...
FE-I3
FE-I3
FE-I3
FE-I3
Ω Ω Ω Ω
FE-I4 test structures
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IV of FE-I4 test structures: data vs simulations
• BD from guard ring current vs Vbias (innermost GR at ground like pad)• data: from FE-I4 test structure (matrix). simulation: 2D-sim of edge pixel• VBD (>100V) increases with #GR as expected. Larger than Vdepl~30 V• agreement on VBD between data and simulation within 20% or better
data (FBK) simulations (LPNHE)
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• long-as-strip, wide-as-pixel sensors
• can be wire-bonded to read-out chip => no need for bump-bonding
• “illuminating” (laser/MIPs) the edge region, CCE at the periphery can be studied
Stripixels for CCE measurements
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Stripixels for CCE measurements• goal: compare CCE before/after irradiation
– with MIPs or laser
• HV: wire-bonding to bias-tab
• read-out system: stripixel wire-bonded to pitch adapter of Beetle chip; read-out through Alibava system (1 at LPNHE, 1 in Geneva/CERN)
HV distribution 3 stripixel sensors with different layout
pitch adapter Beetle chip
wire-bonding (CERN)
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CCE with stripixels: first test
• First test at CERN with 90Sr (trigger with scintillator beyond stripixels)
• Stripixels DC coupled to the Beetle chip
• Results not fully understood; measurement to be redone with decoupling pitch adapter
time [ns]
clu
ste
r ch
arg
e (
ke)
cluster charge (ke)
eve
nts
clu
ste
r ch
arg
e (
ke)
strip #
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Irradiations
• Irradiated several test structures (red boxes) of W95 (p-spray @ 3e12/cm2 + p-stop)
– FE-I4 test structures, stripixels, diodes, ...
– goal: study behaviour of edge after irradiation
• n-irradiation @ Ljublijana
– ϕ = 2.5x1015 neq/cm2
• 1st step: IV/CV (VFD, VBD, Ileak..) at low temperature
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Interconnectionsin the framework of AIDA
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Further R&D (2014-)
Interest in microchanneling (BaBar heritage, now ALICE, LHCb)
Study of micro-machined substrates for cooling
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Persons involved in planar pixels sensors T.BeauM.BombenG.CalderiniJ.ChauveauG.MarchioriD. LaporteF. CrescioliF. Dematos
L. Bosisio (invited from Univ.Trieste)
A. LounisA. Bassalat (PhD)N. DinuA. FallouE. Gkougkousis (PhD)C. SilviaM.C. Solal
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Additional material
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• Installation of a 4th pixel layer inside the current pixel detector:
• performance of current pixel detector will degrade before main tracker upgrade (Phase 2)
• maintain physics performance in high occupancy environment (higher granularity, r/o bandwidth)
• increase radiation hardness (IBL fluence ~ 5x B-Layer fluence)
• Insertable B-Layer
• 250 Mrad TID and 5x1015 neqcm-2
• installation originally planned for 2015-2016… advanced (in 2011) to 2013 (Fast-track IBL)
• IBL mounted on new beam pipe• Length: ~64cm • Envelope: Rin = 31mm, Rout=40mm• 14 staves, 32 pixel sensors / stave.• Front-end chip:
• FE-I4 (IBM 130 nm CMOS tech.)
• 50μm x 250μm• 80(col) x 336 (rows) = 26880
cells.• 2cm x 2cm!
IBL
Pixel
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Planar Slim Edgesensors (CiS)- Oxygenated n-in-n- 200 um thick- guard rings under
pixels - 215um inactive
reg.
3D Slim Edgesensors (FBK +CNM)- p-type- 230 um thick- 200 um inactive
reg.
(Option 1: 100% planar pixel sensors)
Option 2: 75% planar pixel, 25% 3D