plasma display address electrode driving.pdf
TRANSCRIPT
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www.fairchildsemi.com
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07
AN-9038
PDP Panel Drive System Using PDP-SPM
TMModule
By S.N. Kim, D.C. Choi, J.E. Yeon, C.K. Kim
Contents
1. Introduction
2. Plasma Display Panel
2.1. Consist of an AC PDP Panel2.2. Commercial Driving Scheme for AC PDPs
2.3. Driving Methods for AC PDPs
2.4. Driving Sequence and Waveforms in Sustain Mode
3. Product Outline of PDP-SPM
3.1. Ordering Information
3.2. Product Selection
3.3. Internal Circuit and features
3.4. Package Outline
4. Application Outline
4.1. Overview of Application Circuit
4.2. Bootst rap Circuit
4.3. Footpr int Guide of PDP-SPM for PCB Design
5. Package
5.1. Heat Sink Mounting
5.2. Handling Precaution
5.3. Marking Specifications
5.4. Packaging Specifications
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 2
1. Introduct ion
This PDP-SPMTM module combines an optimized circuit
in a buffer IC and a drive that is matched to the IGBTs
switching characteristics. System reliability is further
enhanced by integrated under-voltage protection and high
driving capability. The PDP- SPM module is an advanced
module designed to achieve high system reliability.
This application note explains how to design the detailed
power circuit of PDP-SPM and its applications for users.
This document provides a design example with a sustain
and ER module, which is a well-known driving method and
sequence of PDP panel driving.
2. Plasma Display Panel
2.1 Consist of an AC PDP panelA PDP is a display device with self-emission
characteristics. This device used plasma discharge in order
to utilizing the light emission.
This device has commonly Surface Discharge Structure for
long life and high brightness.
Fig. 1. is simplified cross sectional structure of Alternating
Current (AC) PDP.
Figure 1. Cross Sectional Structure of AC Plasma
Display Panel (PDP)
As shown in the figure above, the AC PDP is composed of
three electrodes, two bus electrodes, whose role is to makelight emissions, one bus and address electrode, whose
function is to make a wall charge before plasma discharge
during sustain period.
Meanwhile, since bus electrodes are covered with the
dielectric and MgO, the load characteristics of the AC PDP
can be represented by the capacitive load.
Fig. 2. is an equivalent circuit for inherent capacitance of
PDP cell.
Figure 2. Equivalent Circuit for inherent
capacitance of PDP cell
2.2 Commercial driving scheme for AC PDPsMost AC PDPs use Address Data Separation(ADS)
method for displaying one picture as shown Fig. 3.
On every sub-fields consist of reset, address and sustain
period. The number of subfield is variable by picture
brightness and power consumption. During the reset period,
the PDP cell is initiated without any charge for unexpected
discharging. During the address period, wall charge
accumulated in the PDP cell for sustaining. The gas
discharge occurs during sustain period, which is for light
emission.
Meanwhile, most of the power that is required to drive the
PDP is consumed driving the sustaining period. In otherwords, the power switches in the sustain circuit are
primarily responsible for efficiency and size of the overall
system.
SF : sub-field
Figure 3. ADS of one TV field
2.3 Driving Methods for AC PDPsThis application note deals with Weber driving method that
is commonly used.
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 3
Fig.4. is conventional driving pulse at Weber driving
method, X and Y are Bus electrodes, A is Address
electrode.
Figure 4. Weber Driving Method
In general, X and Y electrode are operating a full-
bridge configuration as shown in Fig.5. This schematic
diagram is conventional Weber circuit. This is the leadingthat is now used by many PDP manufacturers.
This application note focus on the sustain period, so there
is a focus on sustain and energy recovery block.
Power devices in Fig.5. can be grouped as a functional
unit :
- Energy recovery circuit : Q3~4, Q7~8, D3~4, D7~8
- Sustain circuit : Q1~2, Q5~6, D1~2, D5~6
The sustain block is operating as full-bridge and the
energy recovery block is operating leading and lagging
energy for give-and-take charges to the PDP cells with the
assistance of sustain operating.
2.4 Driving Sequence and Waveform in SustainModeFig.6. is shown t1~t5 which are the timing flows at Y-
board at sustain period.
The t1 is given the energy through the PDP panel from Y-
board to X-board. The panel voltage goes high as rate of LC
resonance frequency. L is series inductor including
parasitic inductance and C is an equivalent capacitor of
panel.
The t2 is sustaining the energy. During the t2, PDP panel
is charged positive across Y to X board, and the panel
voltage is maintained to Vs.
The t3 is recovered the energy which is charged in Panel,
and the panel capacitor discharges until the panel voltagedrops to zero.
The t4 is free-wheel time and the ground potential is
supplied to the panel.
The t5 is same function like t1, energy flow from X-board
to Y-board
Next time sequence is alternating as same flow.
Figure 6. Driving sequence during sustain period
The waveform in board output is Fig.7. in PDP set.
Figure 7. X & Y board voltage waveform at
sustain period
Figure 5. Schematic diagram of Y- & X- electrode
Reset Address SustainSustain
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 4
3. Product outline of PDP-SPM module
3.1 Ordering Information3.2 Product Selection
Rating
Part Number Current
(A)
Voltage
(V)
MainApplication
FVP18030IM3LSV1 180 300 Sustain
FVP12030IM3LEG1 120 300 ER
3.3 Internal Circuit and features Use of high speed 300V IGBTs with parallel FRDs
Single-grounded power supply by means of built-in
HVIC
Sufficient current driving capability for IGBTs due to
adding buffer ICs.
Low leakage current due to using an insulated metal
substrate
Metal part IMS is connected with IGND pin for heat-sink
ground.
Sustain and ER module each consist of a board
(a) Sustain ( FVP18030IMS3LSG1 ) (b) ER ( FVP12030IMS3LEG1 )
Figure 8. Internal circu it
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 5
3.4 Package DimensionsThese two modules are distinguished from IGND(Pin7)
(a) Sustain ( FVP18030IMS3LSG1 ) (b) ER ( FVP12030IMS3LEG1 )
Figure 9. Package Dimensions
4. Application Outline
4.1 Overview of Application Circuit
(1) COML
(2) VINL
(3) VCCL
(4) VBL
(5) G L(6) VS
L
(7) I GND
(8) COMH
(9) VINH
(10) VCCH
(11) VBH
(13) VSH
(12) GH
(19) EL
(18) AL
(17) CL
(16) AH
(15) EH
(14) CH
(1) COML
(2) VINL
(3) VCC L
(4) VBL
(5) GL
(6) VSL
(7) I GND
(8) COMH
(9) VINH
(10) VCCH
(11) VBH
(13) VSH
(12) GH
(19) EL
(18) CL
(17) AL
(16) KH
(15) EH
(14) CH
SUS_DN
+ Vcc
SUS_UP
ER_DN
ER_UP
+ Vs
+ Vs
DZSP
CSPC
CSP
RIN
DZBS
CBS
RIN
DBSRBS
DZBS
CBS
DZSP
CSPC
CSP
RIN
DZBS
CBS
RIN
DBSRBSDZBS
CBS
RBS
DBS
ERC
C CLAMP
C CLAMP
ERL
CP
CP
FVP
18030IM3LSG1
FVP1203
0IM3LEG1
(1) COML
(2) VINL
(3) VCCL
(4) VBL
(5) GL
(6) VSL
(7) I GND
(8) COMH
(9) VINH
(10) VCCH
(11) VBH
(13) VSH
(12) GH
(19) EL
(18) AL
(17) CL
(16) AH
(15) EH
(14) CH
(1) COML
(2) VINL
(3) VCCL
(4) VBL
(5) GL
(6) VSL
(7) I GND
(8) COMH
(9) VINH
(10) VCC H
(11) VBH
(13) VSH
(12) GH
(19) EL
(18) CL
(17) AL
(16) KH
(15) EH
(14) CH
SUS_DN
+ Vcc
SUS_UP
ER_DN
ER_UP
+ Vs
+ Vs
DZSP
CSPC
CSP
RIN
DZBS
CBS
RIN
DB S RB SDZBS
CBS
DZSP
CSPC
CSP
RIN
DZBS
CBS
RIN
DB S RB S
DZBS
CBS
RBS
DBS
ERC
CCLAMP
C CLAMP
ERL
CP
CP
FVP1
8030IM3LSG1
F
VP12030IM3LEG1
Panel
Y - Board X- Board
Cp
CSP
CSP CSP
CSP
Figure 10. Overview of Application circu it
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 6
Figure 4.1 shows a typical application circuit of a sustain
and energy recovery block to compose the Webber circuit
that is used to drive the PDP. The circuits of X and Y-
board are identical and symmetry structure.
4.2 Bootst rap Circuit4.2.1 Operation of Bootstrap Circuit of Sustain part
The VBS voltage, which is the voltage difference between
VB and VS, provides the supply to the HVICs and the
buffer ICs within the PDP-SPM in VPM19. This supply
must be in the range of 13.0~20V to ensure that the buffer
IC can fully drive the IGBT. The PDP-SPM module
includes an under-voltage detection function for the VBS to
ensure that the HVIC does not drive the IGBT. If the VBS
voltage drops below a specified voltage (refer to the
datasheet). This function prevents the IGBT from operating
in a high dissipation mode.
There are a number of ways in which the VBS floating supply
can be generated. One of them is the bootstrap method
described in the following way. This method has the advantage
ofbeing simple and inexpensive. However, the duty cycle
and on-time are limited by the requirement to refresh the
charge in the bootstrap capacitor. The bootstrap supply is
formed by a combination of an external diode, resistor and
capacitor as shown in Figure 10. The current flow path of
the bootstrap circuit is shown in Figure 11, 12, 13. When theSUS-DNs switch is on, the SUS-UP and ER-UPs bootstrap
capacitor (CBS) is charged through the bootstrap diode (DBS)
and the resistor (RBS) from the VCC supply. And when the
ER-UPs switch is on, the ER-DNs bootstrap capacitor is
charged through the bootstrap diode(DBS), the resister(RBS)
and the ER-UPs IGBT in figure 13. ER-DNs bootstrapsystem uses the ER-UPs bootstrap voltage to power source
instead of the VCC supply.
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
DBS
RBS
CBS
+Vs
VCC
SUS-DN
Figure 11. SUS-UP Boots trap Circuit
+Vs
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
DBS
RBS
VCC
CBS
CBS
RBS
DBS
SUS-DN
SUS-UP
ER-UP
ER-DN
ERC
ERL
Figure 12. ER-UP Boots trap Circuit
+Vs
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
DBS
RBS
VCC
CBS
CBS
RBS
DBS
SUS-DN
SUS-UP
ER-UP
ER-DN
ERC
ERL
Figure 13. ER-DN Boots trap Circuit
4.2.2 Initial Charging of Bootstrap Capacitor
An adequate on-time duration of the IGBT on the current
flow path of the bootstrap circuit to fully charge the
bootstrap capacitor is required for initial bootstrap
charging. The initial charging time (tcharge) can be calculated
from the following equation:
for SUS-UP
)ln((min)
arg
LSfBSCC
CCBSBSech
VVVV
VRCt
1 (4-1)
for ER-UP
)ln(
)(
(min)
arg
LSfBSCC
CC
ERLBSBSech
VVVV
V
RRCt
+
1
(4-2)
for ER-DN
)ln((min)_
_
arg
HSfBSUPERBS
UPERBS
BSBSech
VVVV
V
RCt
1
(4-3)
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 7
Vf = Forward voltage drop across the bootstrap diode
VBS(min) = The minimum value of the bootstrap capacitor
VHS = Voltage drop across the high-side IGBT in ER
VLS = Voltage drop across the low-side IGBT in SUS
RERL = The equivalent resistance of ERL inductor
= Duty ratio of of the IGBT on the current flow path
VIN: SUS-Down
0V
0VSustain
&
Energy
Recovery
Circuits
Operation
t
VBS
VCC
VIN : ER-Up
Figure 14. Timing Chart of Initial Boots trapCharging
4.2.3 Selection of a Bootstrap Capacitor
The bootstrap capacitance can be calculated by:
V
tIC
BS
BS
=
(max) (4-4)
Where
t = maximum ON pulse width of floating-side IGBTV = the allowable discharge voltage of the CBS.
IBS(max) = maximum discharge current of the CBS mainly via
the following mechanisms:
(1) Gate charge for turning the floating-side IGBT on
(2) Quiescent current to the high-side circuit in the IC
(3) Level-shift charge required by level-shifters in the IC
(4) Leakage current in the bootstrap capacitor(CBS)
leakage current (ignored for non-electrolytic
capacitors)
(5) Bootstrap diode reverse recovery chargeBy taking consideration of dispersion and reliability, the
capacitance is generally selected to be 2~3 times of the
calculated one. The CBS is only charged when the floating-
side IGBT is off and the VS voltage is pulled down to
ground. Therefore, the on-time of the SUS-DNs IGBT(ER-
UPs IGBT for ER-DN) must be sufficient to ensure that
the charge drawn from the CBS capacitor can be fully
replenished. Hence, inherently there is a minimum on-time
of the SUS-DNs IGBT(ER-UPs IGBT for ER-DN) (or
off-time of the floating-side IGBT).
The bootstrap capacitor should always be placed as close to
the pins of the SPM as possible. At least one low ESR
capacitor should be used to provide good local de-coupling.
For example, a separate ceramic capacitor close to the SPM
is essential, if an electrolytic capacitor is used for the
bootstrap capacitor. If the bootstrap capacitor is either a
ceramic or tantalum type, it should be adequate for localdecoupling.
4.2.3 Selection of a Bootstrap Diode
When floating-side IGBT or diode conducts, the bootstrap
diode (DBS) supports the entire sustain voltage. Hence the
withstand voltage more than 300V is recommended. It is
important that this diode should be fast recovery (recovery
time < 100ns) device to minimize the amount of charge that
is fed back from the bootstrap capacitor into the VCC
supply.
4.2.4 Selection of a Bootstrap Resistance
A resistor RBS
must be added in series with the bootstrapdiode to slow down the dVBS/dt and it also determines the
time to charge the bootstrap capacitor. That is, if the
minimum ON pulse width of the IGBT on the bootstrap
charging current flow path or the minimum OFF pulse
width of floating-side IGBT is t0, the bootstrap capacitor
has to be charged V during this period. Therefore, the
value of bootstrap resistance can be calculated by the
following equation.
VC
tVVccR
BS
OBSBS
=
)( (4-5)
In conclusion, RBS is selected to the maximum value
between the two values calculated by the equations and its
power rating is greater than 1/4W. Note that if the rising
dVBS/dt is slowed down significantly, it could temporarily
result in a few missing pulses during the start-up phase due
to insufficient VBS voltage.
4.2.4 Charging and Discharging of the Bootstrap Capacitor
The bootstrap capacitor (CBS) charges through the path as
shown Fig. 11, 12 and 13 when the floating-side IGBT is
off, and the VS voltage is pulled down to ground. Itdischarges when the floating-side IGBT is on.
Example 1: Selection of the Initial Charging Time
An example of the calculation of the minimum value of the
initial charging time is given with reference to equation
(4.1) to (4.3).
Conditions:
CBS = 10 F
RBS = 5.6
Duty Ratio()= 0.2
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 8
DBS = 1N4937 (600V/1A rating)
VCC = 15V
Vf = 0.5V
VBS(min) = 13V
VHS =VLS= 0.7V
VERL=0.01
us
VVVV
VuFt ech 821
70501315
15
20
16510
)
..
ln(
.
.arg
(4-6)
In order to ensure safety, it is recommended that the
charging time must be at least three times longer than the
calculated value.
Example 2: The Minimum Value of the Bootstrap
Capacitor
Conditions :
V = 0.8V
t = 0.5usec
IBS(max) = 5A
uFV
usACBS 13380
505..
.=
The calculated bootstrap capacitance is about 3uF. By
taking consideration of dispersion and reliability, the
capacitance is generally selected to be 2-3 times of the
calculated one. Note that this result is only an example. It is
recommended that you design a system by taking
consideration of the actual control pattern and lifetime of
components.
4.2.5 Recommended Boot Strap Operation Circuit and
Parameters
Figure 4.6 is the recommended bootstrap operation circuit and
parameters.
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
+VsDBSRBS
+15V line
10uF
5.6
1uF
10uF 1uF
(a) Sustain circuit
+Vs
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
VCC
VB
OUTCOM
IN Vs
VCC
OUTIN
GND
DBS
RBS
RBS
DBS
SUS-DN
SUS-UP
ERC
ERL
5.6
5.610uF 1uF
10uF 1uF+15V line
(b) ER circuit
Figure 15. Recommended Boots trap Circuit and Parameters
4.3 Footpr int Guide of PDP-SPM for PCB design
Since the lead pins of the PDP- SPM have 7o angle as
shown figure 16 (a), the specific footprint guide is needed
to design the PCB for assembly between PCB and PDP
SPM and for the distance of electric safety between each
pins as shown figure 16 (b) and (c).
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2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 9
Unit : mmUnit : mm
(a)Pin Pitch of PDP-SPM( side view )
Min.Min.
Max. Max.
Unit : mm
Min.Min.
Max. Max.
Unit : mm
(b) Footprint guide of Sustain
( top view )
Min.
Max.
Min.
Max.
Unit : mm
Min.
Max.
Min.
Max.
Unit : mm
(c) Footprint guide of ER
( top view )Figure 16. Recommended Footpr int Guide for PCB design.
5. Package
5.1 Heat Sink MountingThe following precautions should be observed to maximize
the effect of the heat sink and minimize device stress, when
mounting an SPM on a heat sink.
Heat Sink
Please follow the instructions of the manufacturer, when
attaching a heat sink to a PDP-SPM module. Be careful not
to apply excessive force to the device when attaching theheat sink.
Drill holes for screws in the heat sink exactly as specified.
Smooth the surface by removing burrs and protrusions of
indentations. Refer to Table 1.
Heat-sink-equipped devices can become very hot when in
operation. Do not touch, as you may sustain a burn injury.
Silicon Grease
Apply silicon grease between the SPM and the heat sink toreduce the contact thermal resistance. Be sure to apply the
coating thinly and evenly, do not use too much. A uniform
layer of silicon grease (100 ~ 200um thickness) should be
applied in this situation.
Screw Tightening Torque
Do not exceed the specified fastening torque. Over
tightening the screws may cause ceramic cracks and bolts
and AL heat-fin destruction. Tightening the screws beyond
a certain torque can cause saturation of the contact thermal
resistance. The tightening torques in table 1 isrecommended for obtaining the proper contact thermal
resistance and avoiding the application of excessive stress
to the device.
Avoid stress due to tightening on one side only. Figure 17
shows the recommended torque order for mounting screws.
Table 1 Torque Rating
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Figure 17. Flatness Measurement Position
5.2 Handling PrecautionWhen using semiconductors, the incidence of thermal
and/or mechanical stress to the devices due to improper
handling may result in significant deterioration of their
electrical characteristics and/or reliability.
Transportation
Handle the device and packaging material with care. To
avoid damage to the device, do not toss or drop. During
transport, ensure that the device is not subjected to
mechanical vibration or shock. Avoid getting devices wet.
Moisture can also adversely affect the packaging (by
nullifying the effect of the antistatic agent). Place the
devices in special conductive trays. When handling devices,
hold the package and avoid touching the leads, especially
the gate terminal. Put package boxes in the correct
direction. Putting them upside down, leaning them or
giving them uneven stress might cause the electrode
terminals to be deformed or the resin case to be damaged.
Throwing or dropping the packaging boxes might cause the
devices to be damaged. Wetting the packaging boxes might
cause the breakdown of devices when operating. Pay
attention not to wet them when transporting on a rainy or a
snowy day.
Storage
1) Avoid locations where devices will be exposed to
moisture or direct sunlight. (Be especially careful during
periods of rain or snow.)
2) Do not place the device cartons upside down. Stack the
cartons atop one another in an upright position only.: Do
not place cartons on their sides.
3) The storage area temperature should be maintained
within a range of 5C to 35C, with humidity kept within
the range from 40% to 75%.
4) Do not store devices in the presence of harmful
(especially corrosive) gases, or in dusty conditions.
5) Use storage areas where there is minimal temperature
fluctuation. Rapid temperature changes can cause moisture
condensation on stored devices, resulting in lead oxidation
or corrosion. As a result, lead solder ability will be
degraded.6) When repacking devices, use antistatic containers.
Unused devices should be stored no longer than one month.
7) Do not allow external forces or loads to be applied to the
devices while they are in storage.
Environment
1) When humidity in the working environment decreases,
the human body and other insulators can easily become
charged with electrostatic electricity due to friction.
Maintain the recommended humidity of 40% to 60% in the
work environment. Be aware of the risk of moistureabsorption by the products after unpacking from moisture-
proof packaging.
2) Be sure that all equipment, jigs and tools in the working
area are grounded to earth.
3) Place a conductive mat over the floor of the work area,
or take other appropriate measures, so that the floor surface
is grounded to earth and is protected against electrostatic
electricity.
4) Cover the workbench surface with a conductive mat,
grounded to earth, to disperse electrostatic electricity on the
surface through resistive components. Workbench surfacesmust not be constructed of low-resistance metallic material
that allows rapid static discharge when a charged device
touches it directly.
5) Ensure that work chairs are protected with an antistatic
textile cover and are grounded to the floor surface with a
grounding chain.
6) Install antistatic mats on storage shelf surfaces.
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APP NOTE NUMBER APPLICATION NOTE
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7) For transport and temporary storage of devices, use
containers that are made of antistatic materials of materials
that dissipate static electricity.
8) Make sure cart surfaces that come into contact with
device packaging are made of materials that will conduct
static electricity, and are grounded to the floor surface with
a grounding chain.
9) Operators must wear antistatic clothing and conductiveshoes (or a leg or heel strap).
10) Operators must wear a wrist strap grounded to earth
through a resistor of about 1M&.
11) If the tweezers you use are likely to touch the device
terminals, use an antistatic type and avoid metallic
tweezers. If a charged device touches such a low resistance
tool, a rapid discharge can occur. When using vacuum
tweezers, attach a conductive chucking pad at the tip and
connect it to a dedicated ground used expressly for
antistatic purposes.
12) When storing device-mounted circuit boards, use a
board container or bag that is protected against static
charge. Keep them separated from each other, and do not
stack them directly on top of one another, to prevent static
charge/discharge which occurs due to friction.
13) Ensure that articles (such as clip-boards) that are
brought into static electricity control areas are constructed
of antistatic materials as far as possible.14) In cases where the human body comes into direct
contact with a device, be sure to wear finger cots or gloves
protected against static electricity.
Electrical Shock
A device undergoing electrical measurement poses the
danger of electrical shock. Do not touch the device unless
you are sure that the power to the measuring instrument is
off.
5.3 Marking Specifications
(a) Sustain ( FVP18030IMS3LSG1 ) (b) ER (FVP12030IMS3LEG1 )Figure 18. Marking Layout (bottom side)
(a) Sustain ( FVP18030IMS3LSG1 ) (b) ER (FVP12030IMS3LEG1 )
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Figure 19. Marking Dimension of PDP-SPM
1. F : FAIRCHILD LOGO (STYLE & SIZE : SEE SPEC BD-2249)2. XXX : Last 3 digits of Lot No (OPTION CODE)3. YWW : WORK WEEK CODE ("Y" refers to the right alphabet character table)
Table 2 Work Week Code
5.4 Packaging Specifications
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APP NOTE NUMBER APPLICATION NOTE
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 13
Figure 20. Description of packaging process
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www.fairchildsemi.com
2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07
References
[ 1 ] Sang-Kyoo Han, New High-Performance Energy-
Recovery Driver System and High-Efficiency PowerConversion Circuit for Plasma Display Panel
[ 2 ] Motion System Gr, Smart Power Module, Motion
SPM in Mini-Dip Users Guide, Fairchild Semiconductor
Application Note AN-9035, Rev.B.
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