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    www.fairchildsemi.com

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07

    AN-9038

    PDP Panel Drive System Using PDP-SPM

    TMModule

    By S.N. Kim, D.C. Choi, J.E. Yeon, C.K. Kim

    Contents

    1. Introduction

    2. Plasma Display Panel

    2.1. Consist of an AC PDP Panel2.2. Commercial Driving Scheme for AC PDPs

    2.3. Driving Methods for AC PDPs

    2.4. Driving Sequence and Waveforms in Sustain Mode

    3. Product Outline of PDP-SPM

    3.1. Ordering Information

    3.2. Product Selection

    3.3. Internal Circuit and features

    3.4. Package Outline

    4. Application Outline

    4.1. Overview of Application Circuit

    4.2. Bootst rap Circuit

    4.3. Footpr int Guide of PDP-SPM for PCB Design

    5. Package

    5.1. Heat Sink Mounting

    5.2. Handling Precaution

    5.3. Marking Specifications

    5.4. Packaging Specifications

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 2

    1. Introduct ion

    This PDP-SPMTM module combines an optimized circuit

    in a buffer IC and a drive that is matched to the IGBTs

    switching characteristics. System reliability is further

    enhanced by integrated under-voltage protection and high

    driving capability. The PDP- SPM module is an advanced

    module designed to achieve high system reliability.

    This application note explains how to design the detailed

    power circuit of PDP-SPM and its applications for users.

    This document provides a design example with a sustain

    and ER module, which is a well-known driving method and

    sequence of PDP panel driving.

    2. Plasma Display Panel

    2.1 Consist of an AC PDP panelA PDP is a display device with self-emission

    characteristics. This device used plasma discharge in order

    to utilizing the light emission.

    This device has commonly Surface Discharge Structure for

    long life and high brightness.

    Fig. 1. is simplified cross sectional structure of Alternating

    Current (AC) PDP.

    Figure 1. Cross Sectional Structure of AC Plasma

    Display Panel (PDP)

    As shown in the figure above, the AC PDP is composed of

    three electrodes, two bus electrodes, whose role is to makelight emissions, one bus and address electrode, whose

    function is to make a wall charge before plasma discharge

    during sustain period.

    Meanwhile, since bus electrodes are covered with the

    dielectric and MgO, the load characteristics of the AC PDP

    can be represented by the capacitive load.

    Fig. 2. is an equivalent circuit for inherent capacitance of

    PDP cell.

    Figure 2. Equivalent Circuit for inherent

    capacitance of PDP cell

    2.2 Commercial driving scheme for AC PDPsMost AC PDPs use Address Data Separation(ADS)

    method for displaying one picture as shown Fig. 3.

    On every sub-fields consist of reset, address and sustain

    period. The number of subfield is variable by picture

    brightness and power consumption. During the reset period,

    the PDP cell is initiated without any charge for unexpected

    discharging. During the address period, wall charge

    accumulated in the PDP cell for sustaining. The gas

    discharge occurs during sustain period, which is for light

    emission.

    Meanwhile, most of the power that is required to drive the

    PDP is consumed driving the sustaining period. In otherwords, the power switches in the sustain circuit are

    primarily responsible for efficiency and size of the overall

    system.

    SF : sub-field

    Figure 3. ADS of one TV field

    2.3 Driving Methods for AC PDPsThis application note deals with Weber driving method that

    is commonly used.

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 3

    Fig.4. is conventional driving pulse at Weber driving

    method, X and Y are Bus electrodes, A is Address

    electrode.

    Figure 4. Weber Driving Method

    In general, X and Y electrode are operating a full-

    bridge configuration as shown in Fig.5. This schematic

    diagram is conventional Weber circuit. This is the leadingthat is now used by many PDP manufacturers.

    This application note focus on the sustain period, so there

    is a focus on sustain and energy recovery block.

    Power devices in Fig.5. can be grouped as a functional

    unit :

    - Energy recovery circuit : Q3~4, Q7~8, D3~4, D7~8

    - Sustain circuit : Q1~2, Q5~6, D1~2, D5~6

    The sustain block is operating as full-bridge and the

    energy recovery block is operating leading and lagging

    energy for give-and-take charges to the PDP cells with the

    assistance of sustain operating.

    2.4 Driving Sequence and Waveform in SustainModeFig.6. is shown t1~t5 which are the timing flows at Y-

    board at sustain period.

    The t1 is given the energy through the PDP panel from Y-

    board to X-board. The panel voltage goes high as rate of LC

    resonance frequency. L is series inductor including

    parasitic inductance and C is an equivalent capacitor of

    panel.

    The t2 is sustaining the energy. During the t2, PDP panel

    is charged positive across Y to X board, and the panel

    voltage is maintained to Vs.

    The t3 is recovered the energy which is charged in Panel,

    and the panel capacitor discharges until the panel voltagedrops to zero.

    The t4 is free-wheel time and the ground potential is

    supplied to the panel.

    The t5 is same function like t1, energy flow from X-board

    to Y-board

    Next time sequence is alternating as same flow.

    Figure 6. Driving sequence during sustain period

    The waveform in board output is Fig.7. in PDP set.

    Figure 7. X & Y board voltage waveform at

    sustain period

    Figure 5. Schematic diagram of Y- & X- electrode

    Reset Address SustainSustain

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 4

    3. Product outline of PDP-SPM module

    3.1 Ordering Information3.2 Product Selection

    Rating

    Part Number Current

    (A)

    Voltage

    (V)

    MainApplication

    FVP18030IM3LSV1 180 300 Sustain

    FVP12030IM3LEG1 120 300 ER

    3.3 Internal Circuit and features Use of high speed 300V IGBTs with parallel FRDs

    Single-grounded power supply by means of built-in

    HVIC

    Sufficient current driving capability for IGBTs due to

    adding buffer ICs.

    Low leakage current due to using an insulated metal

    substrate

    Metal part IMS is connected with IGND pin for heat-sink

    ground.

    Sustain and ER module each consist of a board

    (a) Sustain ( FVP18030IMS3LSG1 ) (b) ER ( FVP12030IMS3LEG1 )

    Figure 8. Internal circu it

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 5

    3.4 Package DimensionsThese two modules are distinguished from IGND(Pin7)

    (a) Sustain ( FVP18030IMS3LSG1 ) (b) ER ( FVP12030IMS3LEG1 )

    Figure 9. Package Dimensions

    4. Application Outline

    4.1 Overview of Application Circuit

    (1) COML

    (2) VINL

    (3) VCCL

    (4) VBL

    (5) G L(6) VS

    L

    (7) I GND

    (8) COMH

    (9) VINH

    (10) VCCH

    (11) VBH

    (13) VSH

    (12) GH

    (19) EL

    (18) AL

    (17) CL

    (16) AH

    (15) EH

    (14) CH

    (1) COML

    (2) VINL

    (3) VCC L

    (4) VBL

    (5) GL

    (6) VSL

    (7) I GND

    (8) COMH

    (9) VINH

    (10) VCCH

    (11) VBH

    (13) VSH

    (12) GH

    (19) EL

    (18) CL

    (17) AL

    (16) KH

    (15) EH

    (14) CH

    SUS_DN

    + Vcc

    SUS_UP

    ER_DN

    ER_UP

    + Vs

    + Vs

    DZSP

    CSPC

    CSP

    RIN

    DZBS

    CBS

    RIN

    DBSRBS

    DZBS

    CBS

    DZSP

    CSPC

    CSP

    RIN

    DZBS

    CBS

    RIN

    DBSRBSDZBS

    CBS

    RBS

    DBS

    ERC

    C CLAMP

    C CLAMP

    ERL

    CP

    CP

    FVP

    18030IM3LSG1

    FVP1203

    0IM3LEG1

    (1) COML

    (2) VINL

    (3) VCCL

    (4) VBL

    (5) GL

    (6) VSL

    (7) I GND

    (8) COMH

    (9) VINH

    (10) VCCH

    (11) VBH

    (13) VSH

    (12) GH

    (19) EL

    (18) AL

    (17) CL

    (16) AH

    (15) EH

    (14) CH

    (1) COML

    (2) VINL

    (3) VCCL

    (4) VBL

    (5) GL

    (6) VSL

    (7) I GND

    (8) COMH

    (9) VINH

    (10) VCC H

    (11) VBH

    (13) VSH

    (12) GH

    (19) EL

    (18) CL

    (17) AL

    (16) KH

    (15) EH

    (14) CH

    SUS_DN

    + Vcc

    SUS_UP

    ER_DN

    ER_UP

    + Vs

    + Vs

    DZSP

    CSPC

    CSP

    RIN

    DZBS

    CBS

    RIN

    DB S RB SDZBS

    CBS

    DZSP

    CSPC

    CSP

    RIN

    DZBS

    CBS

    RIN

    DB S RB S

    DZBS

    CBS

    RBS

    DBS

    ERC

    CCLAMP

    C CLAMP

    ERL

    CP

    CP

    FVP1

    8030IM3LSG1

    F

    VP12030IM3LEG1

    Panel

    Y - Board X- Board

    Cp

    CSP

    CSP CSP

    CSP

    Figure 10. Overview of Application circu it

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 6

    Figure 4.1 shows a typical application circuit of a sustain

    and energy recovery block to compose the Webber circuit

    that is used to drive the PDP. The circuits of X and Y-

    board are identical and symmetry structure.

    4.2 Bootst rap Circuit4.2.1 Operation of Bootstrap Circuit of Sustain part

    The VBS voltage, which is the voltage difference between

    VB and VS, provides the supply to the HVICs and the

    buffer ICs within the PDP-SPM in VPM19. This supply

    must be in the range of 13.0~20V to ensure that the buffer

    IC can fully drive the IGBT. The PDP-SPM module

    includes an under-voltage detection function for the VBS to

    ensure that the HVIC does not drive the IGBT. If the VBS

    voltage drops below a specified voltage (refer to the

    datasheet). This function prevents the IGBT from operating

    in a high dissipation mode.

    There are a number of ways in which the VBS floating supply

    can be generated. One of them is the bootstrap method

    described in the following way. This method has the advantage

    ofbeing simple and inexpensive. However, the duty cycle

    and on-time are limited by the requirement to refresh the

    charge in the bootstrap capacitor. The bootstrap supply is

    formed by a combination of an external diode, resistor and

    capacitor as shown in Figure 10. The current flow path of

    the bootstrap circuit is shown in Figure 11, 12, 13. When theSUS-DNs switch is on, the SUS-UP and ER-UPs bootstrap

    capacitor (CBS) is charged through the bootstrap diode (DBS)

    and the resistor (RBS) from the VCC supply. And when the

    ER-UPs switch is on, the ER-DNs bootstrap capacitor is

    charged through the bootstrap diode(DBS), the resister(RBS)

    and the ER-UPs IGBT in figure 13. ER-DNs bootstrapsystem uses the ER-UPs bootstrap voltage to power source

    instead of the VCC supply.

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    DBS

    RBS

    CBS

    +Vs

    VCC

    SUS-DN

    Figure 11. SUS-UP Boots trap Circuit

    +Vs

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    DBS

    RBS

    VCC

    CBS

    CBS

    RBS

    DBS

    SUS-DN

    SUS-UP

    ER-UP

    ER-DN

    ERC

    ERL

    Figure 12. ER-UP Boots trap Circuit

    +Vs

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    DBS

    RBS

    VCC

    CBS

    CBS

    RBS

    DBS

    SUS-DN

    SUS-UP

    ER-UP

    ER-DN

    ERC

    ERL

    Figure 13. ER-DN Boots trap Circuit

    4.2.2 Initial Charging of Bootstrap Capacitor

    An adequate on-time duration of the IGBT on the current

    flow path of the bootstrap circuit to fully charge the

    bootstrap capacitor is required for initial bootstrap

    charging. The initial charging time (tcharge) can be calculated

    from the following equation:

    for SUS-UP

    )ln((min)

    arg

    LSfBSCC

    CCBSBSech

    VVVV

    VRCt

    1 (4-1)

    for ER-UP

    )ln(

    )(

    (min)

    arg

    LSfBSCC

    CC

    ERLBSBSech

    VVVV

    V

    RRCt

    +

    1

    (4-2)

    for ER-DN

    )ln((min)_

    _

    arg

    HSfBSUPERBS

    UPERBS

    BSBSech

    VVVV

    V

    RCt

    1

    (4-3)

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 7

    Vf = Forward voltage drop across the bootstrap diode

    VBS(min) = The minimum value of the bootstrap capacitor

    VHS = Voltage drop across the high-side IGBT in ER

    VLS = Voltage drop across the low-side IGBT in SUS

    RERL = The equivalent resistance of ERL inductor

    = Duty ratio of of the IGBT on the current flow path

    VIN: SUS-Down

    0V

    0VSustain

    &

    Energy

    Recovery

    Circuits

    Operation

    t

    VBS

    VCC

    VIN : ER-Up

    Figure 14. Timing Chart of Initial Boots trapCharging

    4.2.3 Selection of a Bootstrap Capacitor

    The bootstrap capacitance can be calculated by:

    V

    tIC

    BS

    BS

    =

    (max) (4-4)

    Where

    t = maximum ON pulse width of floating-side IGBTV = the allowable discharge voltage of the CBS.

    IBS(max) = maximum discharge current of the CBS mainly via

    the following mechanisms:

    (1) Gate charge for turning the floating-side IGBT on

    (2) Quiescent current to the high-side circuit in the IC

    (3) Level-shift charge required by level-shifters in the IC

    (4) Leakage current in the bootstrap capacitor(CBS)

    leakage current (ignored for non-electrolytic

    capacitors)

    (5) Bootstrap diode reverse recovery chargeBy taking consideration of dispersion and reliability, the

    capacitance is generally selected to be 2~3 times of the

    calculated one. The CBS is only charged when the floating-

    side IGBT is off and the VS voltage is pulled down to

    ground. Therefore, the on-time of the SUS-DNs IGBT(ER-

    UPs IGBT for ER-DN) must be sufficient to ensure that

    the charge drawn from the CBS capacitor can be fully

    replenished. Hence, inherently there is a minimum on-time

    of the SUS-DNs IGBT(ER-UPs IGBT for ER-DN) (or

    off-time of the floating-side IGBT).

    The bootstrap capacitor should always be placed as close to

    the pins of the SPM as possible. At least one low ESR

    capacitor should be used to provide good local de-coupling.

    For example, a separate ceramic capacitor close to the SPM

    is essential, if an electrolytic capacitor is used for the

    bootstrap capacitor. If the bootstrap capacitor is either a

    ceramic or tantalum type, it should be adequate for localdecoupling.

    4.2.3 Selection of a Bootstrap Diode

    When floating-side IGBT or diode conducts, the bootstrap

    diode (DBS) supports the entire sustain voltage. Hence the

    withstand voltage more than 300V is recommended. It is

    important that this diode should be fast recovery (recovery

    time < 100ns) device to minimize the amount of charge that

    is fed back from the bootstrap capacitor into the VCC

    supply.

    4.2.4 Selection of a Bootstrap Resistance

    A resistor RBS

    must be added in series with the bootstrapdiode to slow down the dVBS/dt and it also determines the

    time to charge the bootstrap capacitor. That is, if the

    minimum ON pulse width of the IGBT on the bootstrap

    charging current flow path or the minimum OFF pulse

    width of floating-side IGBT is t0, the bootstrap capacitor

    has to be charged V during this period. Therefore, the

    value of bootstrap resistance can be calculated by the

    following equation.

    VC

    tVVccR

    BS

    OBSBS

    =

    )( (4-5)

    In conclusion, RBS is selected to the maximum value

    between the two values calculated by the equations and its

    power rating is greater than 1/4W. Note that if the rising

    dVBS/dt is slowed down significantly, it could temporarily

    result in a few missing pulses during the start-up phase due

    to insufficient VBS voltage.

    4.2.4 Charging and Discharging of the Bootstrap Capacitor

    The bootstrap capacitor (CBS) charges through the path as

    shown Fig. 11, 12 and 13 when the floating-side IGBT is

    off, and the VS voltage is pulled down to ground. Itdischarges when the floating-side IGBT is on.

    Example 1: Selection of the Initial Charging Time

    An example of the calculation of the minimum value of the

    initial charging time is given with reference to equation

    (4.1) to (4.3).

    Conditions:

    CBS = 10 F

    RBS = 5.6

    Duty Ratio()= 0.2

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 8

    DBS = 1N4937 (600V/1A rating)

    VCC = 15V

    Vf = 0.5V

    VBS(min) = 13V

    VHS =VLS= 0.7V

    VERL=0.01

    us

    VVVV

    VuFt ech 821

    70501315

    15

    20

    16510

    )

    ..

    ln(

    .

    .arg

    (4-6)

    In order to ensure safety, it is recommended that the

    charging time must be at least three times longer than the

    calculated value.

    Example 2: The Minimum Value of the Bootstrap

    Capacitor

    Conditions :

    V = 0.8V

    t = 0.5usec

    IBS(max) = 5A

    uFV

    usACBS 13380

    505..

    .=

    The calculated bootstrap capacitance is about 3uF. By

    taking consideration of dispersion and reliability, the

    capacitance is generally selected to be 2-3 times of the

    calculated one. Note that this result is only an example. It is

    recommended that you design a system by taking

    consideration of the actual control pattern and lifetime of

    components.

    4.2.5 Recommended Boot Strap Operation Circuit and

    Parameters

    Figure 4.6 is the recommended bootstrap operation circuit and

    parameters.

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    +VsDBSRBS

    +15V line

    10uF

    5.6

    1uF

    10uF 1uF

    (a) Sustain circuit

    +Vs

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    VCC

    VB

    OUTCOM

    IN Vs

    VCC

    OUTIN

    GND

    DBS

    RBS

    RBS

    DBS

    SUS-DN

    SUS-UP

    ERC

    ERL

    5.6

    5.610uF 1uF

    10uF 1uF+15V line

    (b) ER circuit

    Figure 15. Recommended Boots trap Circuit and Parameters

    4.3 Footpr int Guide of PDP-SPM for PCB design

    Since the lead pins of the PDP- SPM have 7o angle as

    shown figure 16 (a), the specific footprint guide is needed

    to design the PCB for assembly between PCB and PDP

    SPM and for the distance of electric safety between each

    pins as shown figure 16 (b) and (c).

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 9

    Unit : mmUnit : mm

    (a)Pin Pitch of PDP-SPM( side view )

    Min.Min.

    Max. Max.

    Unit : mm

    Min.Min.

    Max. Max.

    Unit : mm

    (b) Footprint guide of Sustain

    ( top view )

    Min.

    Max.

    Min.

    Max.

    Unit : mm

    Min.

    Max.

    Min.

    Max.

    Unit : mm

    (c) Footprint guide of ER

    ( top view )Figure 16. Recommended Footpr int Guide for PCB design.

    5. Package

    5.1 Heat Sink MountingThe following precautions should be observed to maximize

    the effect of the heat sink and minimize device stress, when

    mounting an SPM on a heat sink.

    Heat Sink

    Please follow the instructions of the manufacturer, when

    attaching a heat sink to a PDP-SPM module. Be careful not

    to apply excessive force to the device when attaching theheat sink.

    Drill holes for screws in the heat sink exactly as specified.

    Smooth the surface by removing burrs and protrusions of

    indentations. Refer to Table 1.

    Heat-sink-equipped devices can become very hot when in

    operation. Do not touch, as you may sustain a burn injury.

    Silicon Grease

    Apply silicon grease between the SPM and the heat sink toreduce the contact thermal resistance. Be sure to apply the

    coating thinly and evenly, do not use too much. A uniform

    layer of silicon grease (100 ~ 200um thickness) should be

    applied in this situation.

    Screw Tightening Torque

    Do not exceed the specified fastening torque. Over

    tightening the screws may cause ceramic cracks and bolts

    and AL heat-fin destruction. Tightening the screws beyond

    a certain torque can cause saturation of the contact thermal

    resistance. The tightening torques in table 1 isrecommended for obtaining the proper contact thermal

    resistance and avoiding the application of excessive stress

    to the device.

    Avoid stress due to tightening on one side only. Figure 17

    shows the recommended torque order for mounting screws.

    Table 1 Torque Rating

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 10

    Figure 17. Flatness Measurement Position

    5.2 Handling PrecautionWhen using semiconductors, the incidence of thermal

    and/or mechanical stress to the devices due to improper

    handling may result in significant deterioration of their

    electrical characteristics and/or reliability.

    Transportation

    Handle the device and packaging material with care. To

    avoid damage to the device, do not toss or drop. During

    transport, ensure that the device is not subjected to

    mechanical vibration or shock. Avoid getting devices wet.

    Moisture can also adversely affect the packaging (by

    nullifying the effect of the antistatic agent). Place the

    devices in special conductive trays. When handling devices,

    hold the package and avoid touching the leads, especially

    the gate terminal. Put package boxes in the correct

    direction. Putting them upside down, leaning them or

    giving them uneven stress might cause the electrode

    terminals to be deformed or the resin case to be damaged.

    Throwing or dropping the packaging boxes might cause the

    devices to be damaged. Wetting the packaging boxes might

    cause the breakdown of devices when operating. Pay

    attention not to wet them when transporting on a rainy or a

    snowy day.

    Storage

    1) Avoid locations where devices will be exposed to

    moisture or direct sunlight. (Be especially careful during

    periods of rain or snow.)

    2) Do not place the device cartons upside down. Stack the

    cartons atop one another in an upright position only.: Do

    not place cartons on their sides.

    3) The storage area temperature should be maintained

    within a range of 5C to 35C, with humidity kept within

    the range from 40% to 75%.

    4) Do not store devices in the presence of harmful

    (especially corrosive) gases, or in dusty conditions.

    5) Use storage areas where there is minimal temperature

    fluctuation. Rapid temperature changes can cause moisture

    condensation on stored devices, resulting in lead oxidation

    or corrosion. As a result, lead solder ability will be

    degraded.6) When repacking devices, use antistatic containers.

    Unused devices should be stored no longer than one month.

    7) Do not allow external forces or loads to be applied to the

    devices while they are in storage.

    Environment

    1) When humidity in the working environment decreases,

    the human body and other insulators can easily become

    charged with electrostatic electricity due to friction.

    Maintain the recommended humidity of 40% to 60% in the

    work environment. Be aware of the risk of moistureabsorption by the products after unpacking from moisture-

    proof packaging.

    2) Be sure that all equipment, jigs and tools in the working

    area are grounded to earth.

    3) Place a conductive mat over the floor of the work area,

    or take other appropriate measures, so that the floor surface

    is grounded to earth and is protected against electrostatic

    electricity.

    4) Cover the workbench surface with a conductive mat,

    grounded to earth, to disperse electrostatic electricity on the

    surface through resistive components. Workbench surfacesmust not be constructed of low-resistance metallic material

    that allows rapid static discharge when a charged device

    touches it directly.

    5) Ensure that work chairs are protected with an antistatic

    textile cover and are grounded to the floor surface with a

    grounding chain.

    6) Install antistatic mats on storage shelf surfaces.

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 11

    7) For transport and temporary storage of devices, use

    containers that are made of antistatic materials of materials

    that dissipate static electricity.

    8) Make sure cart surfaces that come into contact with

    device packaging are made of materials that will conduct

    static electricity, and are grounded to the floor surface with

    a grounding chain.

    9) Operators must wear antistatic clothing and conductiveshoes (or a leg or heel strap).

    10) Operators must wear a wrist strap grounded to earth

    through a resistor of about 1M&.

    11) If the tweezers you use are likely to touch the device

    terminals, use an antistatic type and avoid metallic

    tweezers. If a charged device touches such a low resistance

    tool, a rapid discharge can occur. When using vacuum

    tweezers, attach a conductive chucking pad at the tip and

    connect it to a dedicated ground used expressly for

    antistatic purposes.

    12) When storing device-mounted circuit boards, use a

    board container or bag that is protected against static

    charge. Keep them separated from each other, and do not

    stack them directly on top of one another, to prevent static

    charge/discharge which occurs due to friction.

    13) Ensure that articles (such as clip-boards) that are

    brought into static electricity control areas are constructed

    of antistatic materials as far as possible.14) In cases where the human body comes into direct

    contact with a device, be sure to wear finger cots or gloves

    protected against static electricity.

    Electrical Shock

    A device undergoing electrical measurement poses the

    danger of electrical shock. Do not touch the device unless

    you are sure that the power to the measuring instrument is

    off.

    5.3 Marking Specifications

    (a) Sustain ( FVP18030IMS3LSG1 ) (b) ER (FVP12030IMS3LEG1 )Figure 18. Marking Layout (bottom side)

    (a) Sustain ( FVP18030IMS3LSG1 ) (b) ER (FVP12030IMS3LEG1 )

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    APP NOTE NUMBER APPLICATION NOTE

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    Figure 19. Marking Dimension of PDP-SPM

    1. F : FAIRCHILD LOGO (STYLE & SIZE : SEE SPEC BD-2249)2. XXX : Last 3 digits of Lot No (OPTION CODE)3. YWW : WORK WEEK CODE ("Y" refers to the right alphabet character table)

    Table 2 Work Week Code

    5.4 Packaging Specifications

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    APP NOTE NUMBER APPLICATION NOTE

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07 13

    Figure 20. Description of packaging process

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    www.fairchildsemi.com

    2007 Fairchild Semiconductor Corporation www.fairchildsemi.comRev. 1.0.0 9/4/07

    References

    [ 1 ] Sang-Kyoo Han, New High-Performance Energy-

    Recovery Driver System and High-Efficiency PowerConversion Circuit for Plasma Display Panel

    [ 2 ] Motion System Gr, Smart Power Module, Motion

    SPM in Mini-Dip Users Guide, Fairchild Semiconductor

    Application Note AN-9035, Rev.B.

    DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTSHEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITSPATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

    LIFE SUPPORT POLICYFAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMSWITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

    1. Life support devices or systems are devices or systems

    which, (a) are intended for surgical implant into the body, or(b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

    2. A critical component is any component of a life support

    device or system whose failure to perform can be reasonablyexpected to cause the failure of the life support device orsystem, or to affect its safety or effectiveness.