PLASMONIC NANOSENSORS FOR THz

COMMUNICATION AND SENSING

FOR IoT APPLICATIONS

Michael Shur Rensselaer Polytechnic Institute

Troy, NY 12180, USA

1

Presented at

The 14th U.S.-Korea Forum on Nanotechnology: Internet of Things (IoT) including Nanosensors and Neuromorphic Computing

September 11, 2017

Outline 2

Motivation

Scaling issues for VLSI

THz communications on nanoscale

Plasmonic Nanosensors

CNT and graphene plasmonics on Si

Future work

Conclusions

INTERNET OF THINGS INSTALLED BASE (MILLIONS OF UNITS)

3

0

5000

10000

15000

20000

25000

2013 2014 2015 2016 2017 2018 2019 2020 2021

DATA FROM http://www.gartner.com/newsroom/id/3165317

YEAR

More aggressive estimates over 50 billions by 2020

IoT needs 4

LOW POWER WIDE AREA (LPWA) wireless technology

Bandwidth

IoT NEEDS 5

REQUIRE ADVANCED NANOSCALE VLSI

TECHNOLOGY for ULTRA-LOW POWER

INTEL: 10 nm iPhone should be announced today

6

From Rachel Cortland, posted 30 March 2017 https://spectrum.ieee.org/nanoclast/semiconductors/processors/intel-now-packs-100-million-transistors-in-each-square-millimeter

0.1 billion transistors per mm2

7

From Rachel Cortland, posted 30 March 2017 https://spectrum.ieee.org/nanoclast/semiconductors/processors/intel-now-packs-100-million-transistors-in-each-square-millimeter

5 nm? 8

Essential Responsibilities :

· Establishing overlay and CD measurement

capabilities for the 7-nm node and

beyond

Minimum Transistor size 9

Silicon unit cell 0.543 nm (9 unit cells for 5 nm)

Silicon –Silicon Dioxide interface 0.7 nm

Silicon-Silicon Dioxide layer 1 nm

Ferdinand Hodler, Swiss (March 14, 1853 – May 19, 1918)

Cost technology rising after 28 nm 10

SAMSUNG

SEMICONDUCTOR USA

Companies dropping out 11

From SAMSUNG

SEMICONDUCTOR USA

Samsung

TSMC

Intel

Global Foundries

Area Efficiency for INTEL technology

12

Feature size (nm)

Are

a E

ffic

ien

cy

0

0.002

0.004

0.006

0.008

0.01

0.012

0 10 20 30 40 50

Interconnect Resistivity 13

R/Ro

Interconnect Size (nm)

Plasma Waves 14

Drain Source

Gate

+

+ -

+ -

Dispersion of Plasma Waves 15

3D 2D ungated

p

k

p

k

23

0

N Dp

e

m

22

02

N Dp

ek

m

E

+ - +

2D gated

+

+

+

E

-

-

-

E

km

dNe Dp

0

2

2

kd<<1

d

p

k

Plasma Waves in a Field Effect

Transistors 16

GaN

Si

GaAs

0.02 0.05 0.1 0.2 0.5 1

Gate Length (micron)

0.5

10

50

5

1

Plasma modes

Transit modeFre

quen

cy (

TH

z)

From V. Ryzhii and M.S. Shur, Plasma Wave Electronics Devices,

ISDRS Digest, WP7-07-10, pp 200-201, Washington DC (2003)

•Plasma frequency can be tuned by gate-to-channel voltage •FET channel plays a role of a resonant cavity for plasma waves •Plasma waves can propagate much faster than electrons

Claude Monet Impressions of Sunset, Pourville (1882)

Light-plasma wave interaction

Effect of boundary conditions

Kreeger museum, Washington DC

Shock Plasma Waves (Hokusai 1760-1849 ) 18

19

Small size (easy to fabricate arrays)

High sensitivity

Broad spectral range

Band selectivity and tuneability

Fast temporal response

Si plasmonic FETs compatible with

VLSI technology

Veksler, D.B. Muraviev, A.V. Elkhatib, T.A. Salama, K.N. Shur, M.S. , Plasma wave FET for sub-wavelength THz

imaging, International Semiconductor Device Research Symposium December 12-14, 2007 College Park, Maryland, USA

Plasma THz Electronics Advantages

Physics of High Speed 20

ELECTRON TRANSPORT

• Collision dominated

• Ballistic

• Viscous regime

M. Shur, A. Muraviev, G. Rupper, and S. Rudin, THz Pulse Detection by Photoconductive Plasmonic High Electron Mobility Transistor with Enhanced Sensitivity, Device Research Conference (DRC) 2016

Modulation frequency 21

101

102

103

104

105

1010

1011

1012

1013

f MA

X

(Hz)

Mobility () (cm2/Vs)

22nm

100nm

250nm

500nm

InGaAs

101

102

103

104

105

1010

1011

1012

1013

f MA

X

(Hz)

Mobility () (cm2/Vs)

22nm

100nm

250nm

500nm

GaN

101

102

103

104

105

1010

1011

1012

1013

f MA

X (H

z)

Mobility () (cm2/Vs)

22nm

100nm

250nm

500nm

Si

InGaAs GaN

Si

From M. Shur, G. Rupper and S. Rudin, " Ultimate limits for

highest modulation frequency and shortest response time of field

effect transistor ", Proc. SPIE 10194, Micro- and Nanotechnology

Sensors, Systems, and Applications IX, 101942M (May 18, 2017);

doi:10.1117/12.2261105; http://dx.doi.org/10.1117/12.2261105

Plasmonic detectors work up to 5 THz

22

After W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy, Silicon FIN FETs as detectors of terahertz and sub-terahertz radiation, International Journal of High Speed Electronics and Systems, vol. 20, No. 1, pp. 27-42 March (2011)

Graphene photodetectors concepts

23

GL p-i-n photodiodes GNR hot-electron bolometers

Double-GL plasmonic THz

detectors

Hot-electron transistor with

GL base as plasmonic THz

detector

Vah der Waals hot-

electron bolometer

Interband double-GL photodetector

23 V. Ryzhii, T. Otsuji, M. Ryzhii, V. E. Karasik, V. Ya. Aleshkin, A. A. Dubinov, V. Leiman, D. Svintsov, V. Mitin,, and M. S. Shur,

International Symposium on Hybrid Quantum System 2017 (HQS 2017), Zao, Miyagi, Japan, Sept. 10—13, 2017

Modulator 24

-8 -7 -6 -5 -4 -3 -2 -1 00

1

2

3

4

5

6

7

8

f=1.40THz

Mo

dula

tio

n (

%)

Gate Pulse Amplitude (V)

f=1.89THz

N. Pala, D. Veksler, A. Muravjov, W. Stillman, R. Gaska, and M. S. Shur, Resonant Detection and Modulation of Terahertz Radiation by 2DEG Plasmons in GaN Grating-Gate Structures, in Abstracts of IEEE Sensors Conference, Atlanta, GA, October 2007, pp. 291-292

Plasmonic Boom THz Source 25

Gate Source Drain

100 mW @ 1 THz

G. R. Aizin, J. Mikalopas, M. Shur. Current driven" plasmonic boom" instability in gated periodic ballistic nanostructures, Phys. Rev. B 93, No 19, 195315, May 2016

THz Communication on Nanoscale

26

Emitter DetectorFunctional block

Chip

Large VLSI chip using terahertz emitter-detector

pairs for wireless interconnect

From Y. Deng and M. S. Shur, Electron Mobility and Terahertz Detection using Silicon MOSFETs, Solid-State Electronics, Vol. 47, Issue 9, pp. 1559-1563, September 2003

THz attenuation in atmosphere 27

From Tadao Nagatsuma, Present and Future of Terahertz Communications “TeraHertz: New opportunities for industry, EPFL, FEB 11‐13, 2013

THz communication (0.1 THz to 30 THz)

28

Goes through fog and dust

Goes through walls

LOS and NLOS with reflections

Very secure

Hard to jam

Unique for next generation WLAN

Unique for next generation WPAN (biomedical)

Range from 1000’s km in space to submicron communications on chip

Data rates up to Tbps predicted

Excellent for frequency spreading

APPLICATIONS of THz SENSING

TECHNOLOGY 29

Radio astronomy and Earth remote sensing

Vehicle radars and compact radars

Non-destructive VLSI testing

Chemical sensors

Explosive detection sensors

Gasoline and oil quality testing

Moisture content sensing

Coating thickness control

Film uniformity determination

Structural integrity testing

Medical diagnostics, sensing, and imaging

Concealed weapons and object detection

Detection of Chemical Warfare Agents

THz Sensing of Biofluids 30

SampleDrop

GunnDiode

THzBeamChopper

BiasSupply

Preamplifier

Lockinamplifier

Pipe e

FETdetector

N. Pala and M. Shur, Plasmonic THz detectors for biodetection, Electronics Lett,, Vol. 44, No24, p. 1391 (2008) N. Pala, M. S. Shur, and R. Gaska, Plasma Wave-based THz Bio Detectors, presented at SPIE Optics East (2007)

Transfer Characteristics With and Without Heparin and

Response of the Plasma Wave Detector

31

-0.8 -0.6 -0.4 -0.2 0.00

2

4

6

8

10 No Heparin

Heparin 10g/ml

Heparin 100g/mll

Heparin 500g/ml

Heparin 1mg/ml

Fujitsu FHX35X Lg=250nm Vd=100mV

Dra

in C

urr

en

t I

D (

mA

)

Gate Bias VG (V)

N. Pala and M. Shur, Plasmonic THz detectors for biodetection, Electronics Lett,, Vol. 44, No24, p. 1391 (2008) N. Pala, M. S. Shur, and R. Gaska, Plasma Wave-based THz Bio Detectors, presented at SPIE Optics East (2007)

-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0

0

1

2

3

4

5

6

7

8

Fujitsu FHX35X Lg=250nm f=200GHz

Re

spo

nse

A

mp

litu

de

(A

U)

Gate Bias VG (V)

Bare device

Heparin 10 g/ml

Heparin 100 g/ml

Heparin 500 g/ml

Heparin 1 mg/ml

Plasmonic sensor using 2D and 3D

percolating CNTs 32

V. V. Ryzhii, T. Otsuji, M. Ryzhii, V. G. Leiman, G. Fedorov, G. N. Goltzman, I. A. Gayduchenko, N. Titova, D. Coquillat, D. But, W. Knap, V. Mitin, and M. S. Shur, "Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection", J. Appl. Phys. 120(4) (2016) 044501.

CNT supercapacitors for IoT 33

M. Shur, 3D Carbon Nanotube Energy Storage and Sensors Devices and Systems, Provisional Patent Application, EFS ID: 29868227. Application Number: 62536092, Confirmation Number: 5173, July 24 (2017).

A. Vijayaraghavan, S. Kar, S. Rumyantsev, A. Khanna, C. Soldano, N. Pala, R. Vajtai, O. Nalamasu, M. Shur,

and P. Ajayan, Effect of Ambient Pressure on Resistance and Resistance Fluctuations in Single-Wall Carbon

Nanotubes, J. Appl. Phys. 100, 024315 (2006),

Conclusions

• Low power and band width requirements of IoT demand ultra small feature sizes

• Scaled interconnects become a dominant factor

• Plasma waves electronics approach could enable THz communication and sensing from nanoscale on chip to LPWA wireless network scale

• CNT, graphene and CNT supercapacitors integrated wit Si VLSI have potential for IoT applications

• Future work: plasmonic THz sources

34

Acknowledgment 35

This work was made possible by Army Research Laboratory under ARL MSME Alliance (Project Manager Dr. Meredith Reed) and by Office of Naval Research (Project Manager Dr. Paul Maki)