pmdt290une 20 v, 800 ma dual n-channel trench mosfet · 2017. 6. 8. · pmdt290une all information...
TRANSCRIPT
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1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFETRev. 1 — 13 September 2011 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C - - 20 V
VGS gate-source voltage -8 - 8 V
ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 800 mA
Static characteristics (per transistor)
RDSon drain-source on-state resistance
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S1 source TR1
SOT666
2 G1 gate TR1
3 D2 drain TR2
4 S2 source TR2
5 G2 gate TR2
6 D1 drain TR11 2 3
456
017aaa256
D1
S1
G1
D2
S2
G2
Table 3. Ordering information
Type number Package
Name Description Version
PMDT290UNE - plastic surface-mounted package; 6 leads SOT666
Table 4. Marking codes
Type number Marking code
PMDT290UNE AE
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C - 20 V
VGS gate-source voltage -8 8 V
ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 800 mA
VGS = 4.5 V; Tamb = 100 °C [1] - 500 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 3.2 A
Ptot total power dissipation Tamb = 25 °C [2] - 330 mW[1] - 390 mW
Tsp = 25 °C - 1090 mW
Per device
Ptot total power dissipation Tamb = 25 °C [2] - 500 mW
Tj junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 2 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C - 370 mA
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 2000 V
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. Normalized total power dissipation as a function of junction temperature
Fig 2. Normalized continuous drain current as a function of junction temperature
Tj (°C)−75 17512525 75−25
017aaa123
40
80
120
Pder(%)
0
Tj (°C)−75 17512525 75−25
017aaa124
40
80
120
Ider(%)
0
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 3 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM = single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
017aaa361
VDS (V)10–1 102101
1
10–1
10
ID(A)
10–2
Limit RDSon = VDS/ID
(1)
(2)
(3)
(4)
(5)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from junction to ambient
in free air [1] - 330 380 K/W[2] - 280 320 K/W
Rth(j-sp) thermal resistance from junction to solder point
- - 115 K/W
Per device
Rth(j-a) thermal resistance from junction to ambient
in free air [1] - - 250 K/W
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 4 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
FR4 PCB; standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa064
tp (s)10−3 102 10310110−2 10−1
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.750.5
0.330.25 0.2
0.1 0.05
0.020.01
0
017aaa065
tp (s)10−3 102 10310110−2 10−1
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.750.5
0.330.25 0.2
0.1 0.05
0.020.01
0
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 5 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics (per transistor)
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V
VGSth gate-source threshold voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.75 0.95 V
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 10 µA
IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 500 nA
RDSon drain-source on-state resistance
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C - 290 380 mΩ
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C - 460 610 mΩ
VGS = 2.5 V; ID = 400 mA; Tj = 25 °C - 420 620 mΩ
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 600 1100 mΩ
gfs forward transconductance
VDS = 10 V; ID = 200 mA; Tj = 25 °C - 1.6 - S
Dynamic characteristics (per transistor)
QG(tot) total gate charge VDS = 10 V; ID = 500 mA; VGS = 4.5 V; Tj = 25 °C
- 0.45 0.68 nC
QGS gate-source charge - 0.15 - nC
QGD gate-drain charge - 0.15 - nC
Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C
- 55 83 pF
Coss output capacitance - 15 - pF
Crss reverse transfer capacitance
- 7 - pF
td(on) turn-on delay time VDS = 10 V; RL = 250 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C
- 6 12 ns
tr rise time - 4 - ns
td(off) turn-off delay time - 86 172 ns
tf fall time - 31 - ns
Source-drain diode (per transistor)
VSD source-drain voltage IS = 300 mA; VGS = 0 V; Tj = 25 °C 0.48 0.77 1.2 V
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 6 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
Tj = 25 °C Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of gate-source voltage
Tj = 25 °C
(1) VGS = 1.3 V
(2) VGS = 1.4 V
(3) VGS = 1.6 V
(4) VGS = 1.8 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
ID = 400 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function of drain current; typical values
Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values
VDS (V)0 431 2
017aaa351
0.4
0.5
0.3
0.2
0.1
0.6
0.7ID(A)
0.0
4.5 V2.5 V1.8 V
VGS = 1.6 V
1.4 V
1.2 V
1.0 V
017aaa352
10–4
10–5
10–3
ID(A)
10–6
VGS (V)0.00 1.251.000.50 0.750.25
(1) (2) (3)
ID (A)0.70.50.1 0.60.40.20.0 0.3
017aaa353
1.0
0.5
1.5
2.0
RDSon(Ω)
0.0
(1) (2) (3)
(4)
(5)
(6)
VGS (V)0 542 31
017aaa354
1.0
0.5
1.5
2.0
RDSon(Ω)
0.0
(1)
(2)
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 7 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 12. Gate-source threshold voltage as a function of junction temperature
Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
VGS (V)0.0 2.52.01.0 1.50.5
017aaa3550.7
ID(A)
0.5
0.3
0.1
0.0
0.2
0.4
0.6
(1)(2)
Tj (°C)–60 1801200 60
017aaa356
1.00
1.25
0.75
1.50
1.75
a
0.50
Tj (°C)–60 1801200 60
017aaa357
0.50
0.75
0.25
1.00
1.25
VGS(th)(V)
0.00
(1)
(2)
(3)
017aaa358
VDS (V)10–1 102101
10
102
C(pF)
1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 8 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
ID = 0.5 A; VDS = 10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate charge; typical values
Fig 15. Gate charge waveform definitions
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
QG (nC)0.0 0.50.40.2 0.30.1
017aaa359
2
3
1
4
5
VGS(V)
0
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
VSD (V)0.0 1.00.80.4 0.60.2
017aaa3600.7
IS(A)
0.5
0.3
0.1
0.0
0.2
0.4
0.6
(1) (2)
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 9 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
Fig 17. Duty cycle definition
t1t2
P
t006aaa812
duty cycle δ =
t1
t2
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 10 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT666
UNIT bp c D E e1 HE Lp w
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE
04-11-0806-03-16
IEC JEDEC JEITA
mm 0.270.17
0.180.08
1.71.5
1.31.1
0.5
e
1.0 1.71.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.30.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
EA
S
0 1 2 mm
scale
A
0.60.5
c
X
1 2 3
456
Plastic surface-mounted package; 6 leads SOT666
Y S
w M A
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 11 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
10. Soldering
Fig 19. Reflow soldering footprint for SOT666
solder lands
placement area
occupied area
solder paste
sot666_fr
2.75
2.45
2.1
1.6
0.4(6×)
0.55(2×)
0.25(2×)
0.6(2×)
0.65(2×)
0.3(2×)
0.325(4×)
0.45(4×)
0.5(4×)
0.375(4×)
1.72
1.7
1.075
0.538
Dimensions in mm
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 12 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMDT290UNE v.1 20110913 Product data sheet - -
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Product data sheet Rev. 1 — 13 September 2011 13 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
12.2 DefinitionsPreview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 DisclaimersLimited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
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13. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [email protected]
© Nexperia B.V. 2017. All rights reservedPMDT290UNE All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 September 2011 15 of 16
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Nexperia PMDT290UNE20 V, 800 mA dual N-channel Trench MOSFET
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .11.1 General description . . . . . . . . . . . . . . . . . . . . . .11.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .108.1 Quality information . . . . . . . . . . . . . . . . . . . . . .10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .1412.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .1412.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1412.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .1412.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
13 Contact information. . . . . . . . . . . . . . . . . . . . . .15
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 13 September 2011