power electronics technologies for greener driving · 2021 ~6.1m vehicles ~7.2m vehicles ~3.3m...
TRANSCRIPT
Power Electronics Technologies for
Greener Driving
Ahad Ahmed Buksh, Manuel Gärtner, Maurizio Ferrara, Mario Giuseppe Saggio, Michele Macauda, Jochen Langheim
Solihull UK, February 27th 2019
Future Powertrain Conference 2019
Agenda 2
Introduction
Greener driving challenges, opportunities and key applications
Power semiconductors technologies for xEV
SiC advantages and challenges
SiC technology and package roadmap
Conclusion and takeaways
Who We Are 3
Front-End
Back-End
Research & Development
Main Sales & Marketing
As of December 31, 2018
• Approximately 46,000 employees worldwide
• Approximately 7,400 people working in R&D
• 11 manufacturing sites
• Over 80 sales & marketing offices
• A global semiconductor leader
• 2018 revenues of $9.66B with year-
on-year growth of 15.8%
• Listed: NYSE, Euronext Paris and
Borsa Italiana, Milan
Industry Challenge: Making Driving GreenerST Addresses all Segments with a Complete Range of Solutions
4
Battery Electric VehicleHigh-end battery-based full electric car
~15% less CO2
Reducing emissions International CO2 target Moving towards electric vehicles
Mild Hybrid 48VLow-end entry level electrification
Internal Combustion Engine
Euro4 vs. Euro6
Zero CO2 Emissions~65% less NOx(*)
Euro4, Euro6 : European Emission standards for passenger cars and light commercial vehicles
(*) European emission standards referred to diesel passenger car (Euro4 vs. Euro6)
Lower Emissions and Increasing Semiconductor Content
2018 ~1.8M vehicles ~4.2M vehicles ~1.2M vehicles
2021 ~6.1M vehicles ~7.2M vehicles ~3.3M vehicles
2025 ~13.1M vehicles ~11M vehicles ~7.2M vehicles
ST well positioned to Benefit from Incremental Demand 5
Battery Electric VehicleFull & Plug-in HybridMild Hybrid / 48V
Automotive semiconductor demand for engine control by degree of electrification
Mild Hybrid 48V Mild Hybrid 48V Mild Hybrid 48V0
1,000
2,000
3,000
4,000
2018 2025
Mil
lio
ns o
f U
S$
0
1,000
2,000
3,000
4,000
2018 2025M
illi
on
s o
f U
S$
0
1,000
2,000
3,000
4,000
2018 2025
Milli
on
s o
f U
S$
Source: Strategy Analytics: Automotive Semiconductor Demand Forecast
October 2018
Key Applications and Solutions for xEVDisrupting the Market
6
Innovation Enabler Semiconductor
Courtesy of Audi
AudiVorsprung durch Technik
Focus on Traction Inverter, Onboard Charging
Hybrid/ Electric Vehicle
Power Semiconductors for Electric VehiclesFigure of Merit
7
0
1
2
3
4
5
Electric Field[MV/cm]
Thermal Conductivity[W/ (cm * K)]
Melting Point[* 1000°C]
Electron Velocity[* 107cm/s]
Energy Gap[eV]
Figure of Merit: Si, SiC & GaN
Si GaN SiC
Electron Velocity
[ * 107 cm/s ]
Energy Gap
[ eV ]
Electric Field
[ MV/cm ]
Thermal Conductivity
[ W / (cm *K) ]
Melting Point
[ * 1000 C ]
High Switching
Frequency
High
Temperature
Application
High Voltage
Operation
SiCHexagonal
SiCubic
GaNHexagonal (cubic)
GaN Gallium Nitride SiC Silicon CarbideSi Silicon
Si IGBT
Si MOSFET
SiC
Power Semiconductors Fit for Key Applications 8
Si MOSFET GaN (Gallium Nitride)Si IGBT
1M1k 10k 100k fSW (Hz)
1k
10k
100k
1M
POUT (W)
GaN
Traction
Inverter Power DC/DC
Converter
OBC
SiC (Silicon Carbide)
Aux. DC/DC
Converter
Advantages of SiC in Traction Inverters 9
Drive Train Electrification : Enabled by SiC Technology
(*) 90kW Traction Inverter, 800V bus, fPWM=16kHz, Tfluid = 60 C
(**) applicable to DC to DC converter when present
SiC
MOSFET
Silicon IGBT
+ Diode Traction Inverter - End User Value Proposition
Power Semiconductors size:
Up to 70% smaller Up to
75%
Overall
size
reduction
Up to 10% Mileage Extension
Extended life in use
Cooling System:
Up to 70% smaller
Passive Components:
Up to 80% smaller (**)
Die area for 100A nominal current
[mm2]150 25
Max Junction temperature [°C] 175 200
Normalized switching
energy 7 1
Normalized Power Loss(*)
(Typical Mission profile)10 1
Average junction temperature at
nominal power [°C] (*) 110 90
Traction Inverter
Advantages of SiC in On-Board Battery Chargers 10
Case Study 11kW, 3-Phase OBC
*including heatsink , passive components, switches, filters
**only due to semi-conductor components
SiC MOSFET
+ Diode
Silicon IGBT
+ Diode OBC - End User Value Proposition
Reduce heatsink size
60%
weight,
volume
reduction
Higher Efficiency
Reduce passive component size
Reduce congestion and decrease car
weight
Losses [W] 300 216
Switching Frequency [kHz] 25 100/150
Volume* [cm3] 4593 1986
Weight* [g] 7708 3074
Efficiency** [%] 96.9 97.7
On-board Charger
Challenges for Silicon Carbide 11
Manufacturing CapacityTechnical
Defectivity
Macro-steps
Triangle SFS
Buried SFS
PIT = MP
Reliability
SiC Manufacturing at a glance
ST is Growing its Silicon Carbide Experience 12
• ST is currently providing leading OEMs
and Tier 1s with its SiC solutions
• Increasing number of partners for SiC
clearly shows that ST is the leader and
has deepest technical understanding
• ST has one of the broadest SiC
portfolio covering every clients
requirements
• Bare Die
• Through hole Package
• SMD Package
• Module Package
• Custom Package
June 2003
2" ST line
June 2006
3" ST line
June 2011
4" ST line
June 2016
6" ST line
Pioneers..
2003 – 2”
line startup2006 – 3”
line startup
2011 – 4”
line startup
2016 – 6”
line startup
0
1
2
3
4
2017 2018 2019 2020 2021 2022
Normalized Capacity
100
185235
285335
375
0
100
200
300
400
2017 2018 2019 2020 2021 2022
Normalized Capacity
Supply & Value Chain - SiC Subrates 13
…The agreement governs the supply of a
quarter billion dollars of Cree’s advanced
150mm silicon carbide bare and epitaxial wafers
to STMicroelectronics…
…ST will acquire 55% of Norstel’s share
capital, with an option to acquire the
remaining 45%…
…Norstel AB is a manufacturer of conductive and
semi-insulating Silicon Carbide (SiC) wafers…
SiC Innovation at STTechnology and Packaging Roadmap
14
Power Modules
In Production
Production 2020
Production 2019
ACEPACKTM
SMIT
ACEPACKTM DRIVE
Customer dedicated
module
650V to 1200V
MOSFETs and DIODEs
2017 2018
x7
MOSFETs Units shipped per year
SiC adoption faster than expected Package offer - Discrete – Mini-module – Modules
Front-end Evolution
Discrete Packaging
Continuous
Shrinkage[Ron x cm2]
x2 shrink1st Gen
2nd Gen
In Production
x4 shrinkPlanar
Planar
Trench3rd Gen
ACEPACKTM 1
ACEPACKTM 2
Conclusions and Takeaways 15
6” wafer production and EPI
process step in-house in ST
Bare Die, Discrete Package
and Module offer
Automotive GradeAEC-
Q101
SiC MOSFET and Diode products
available and significantly growing
for 1200V and 650V
Standard product offer
and customized solutions
• Electric Vehicles are disrupting the automotive market
• ST has complete range of solutions for each key
growing applications in xEVs
• SiC Technology provides substantial advantages over
Si including an optimized total cost of ownership
• Introducing the new material in Automotive is
challenging but our experience proves it’s doable
• Ramp up of SiC Technology in STMicroelectronics is
much faster as compared to market
• ST has strong SiC ecosystem supporting its long-
term SiC roadmap and business