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© 2019 | www.knowmade.comKnowMadePatent & Technology Intelligence

POWER SiCMOSFETs – SBDs – Modules

Patent Landscape Analysis

January 2019

2© 2019 All rights reserved | www.knowmade.com

Power SiC: MOSFETs, SBDs and Modules – Patent Landscape Analysis| January 2019 | Ref. : KM19001

THE AUTHORS

Dr. Rémi ComynRémi works for Knowmade in the field of CompoundSemiconductors and Electronics. He holds a PhD inPhysics from the University of Nice Sophia-Antipolis inFrance in partnership with CRHEA-CNRS, also located inSophia-Antipolis, France, and the University ofSherbrooke in Québec, Canada. Rémi has also workedin a compound semiconductor research laboratory as aresearch engineer.Contact: [email protected]

Dr. Nicolas BaronNicolas is CEO and co-founder of Knowmade. Hemanages the development and strategic orientations ofthe company and personally leads the Electronics &Telecom department. He holds a PhD in Physics fromthe University of Nice Sophia-Antipolis, and a Master ofIntellectual Property Strategies and Innovation from theEuropean Institute for Enterprise and IntellectualProperty (IEEPI) in Strasbourg, France.Contact: [email protected]

ABOUT KNOWMADE

Specialized in analysis of patents and scientific information, Knowmadeprovides Technology Intelligence and IP strategy consulting services.The company supports R&D organizations, industrial companies andinvestors in their business development by offering them a deepunderstanding of their IP environment and the technology trends.

Knowmade operates in the following industrial sectors:Compound semiconductors, power electronics, RF devices andtechnologies, solid-state lighting and display, photonics, memory,MEMS and sensors, semiconductor manufacturing and advancedpackaging, battery and energy management, biotechnology,pharmaceuticals, medical devices, medical imaging, and agri-food.

Knowmade’s experts provide prior art search, patent landscapeanalysis, scientific literature analysis, patent valuation, IP due diligenceand freedom-to-operate analysis. In parallel the company proposeslitigation/licensing support, technology scouting and IP/technologywatch service. Knowmade’s analysts combine their technical andpatent expertise by using powerful analytics tools and proprietarymethodologies to deliver relevant patent analyses and scientificreviews.



TABLE OF CONTENTS

INTRODUCTION 5•Market trends•Scope of the report•Objectives of the report•Key feature of the report•Main assignees cited in the report

METHODOLOGY 13•Patent search, selection and analysis•Terminology for patent analysis

EXECUTIVE SUMMARY 18

SiC MOSFETs 36

Patent landscape oveview 40•Time evolution of patent publications•Leading patent applicants•Main patent applicants by country of head

office•Main IP players: Number of patents and

current legal status•Time evolution of main patent applicants•Most current active players•Focus on CREE/Wolfspeed•New entrants•Focus on Hestia Power•Geographic coverage of patent filings and

corresponding current legal status of patents•Main patent assignees vs. Countries of

granted/pending patents•Patents recently expired•Patents near expiration date•Conclusion

Patent segmentation 60For each planar MOSFET, trench MOSFET and gate oxide:- Time evolution of patent publications- Main patent assignees- IP trends for main patent applicants•Planar SiC MOSFET 70

- IP leadership of patent assignees- IP blocking potential of patent assignees- Strength of patent portfolios- Key patent families•Trench SiC MOSFET 75

- IP leadership of patent assignees- IP blocking potential of patent assignees- Strength of patent portfolios- Key patent families•Gate oxide 80

Recent developments from major IP players to address reliability issues due to gate oxide in SiC trench MOSFET.

SiC SCHOTTKY BARRIER DIODE 91•Time evolution of patent applicants• IP leadership of patent assignees•Key patent families•Historical patent applicants and their recent

patents•New entrants and their patents•Conclusion

SiC POWER MODULE 114•Time evolution of patent publications•Time evolution of main patent applicants• IP leadership of patent assignees•Full SiC power modules•Hybrid SiC power modules•Key patent families•Review of portfolio for IP leaders•Focus on new entrants•Conclusion

CONCLUSION 135

KNOWMADE PRESENTATION 141



SCOPE OF THE REPORT

• This report provides a detailed picture of the patent landscape for SiC-based power electronics, covering MOSFETs,Schottky barrier diodes (SBD) and power modules.

• This report covers patents published worldwide up to October 2018.• We have selected and analyzed more than 1,600 patent families (inventions) relevant to the scope of this report.

Selected Excluded

Patents related to SiC-based power semiconductor devices (MOSFETs, SBDs) ormodules

X

Patents claiming devices (MOSFETs, SBDs) or modules that specifically use SiC X

Patents describing SiC as the preferred solution X

Patents describing devices (MOSFETs, SBDs) or modules that can use WBG selectedfrom SiC, GaN, or Diamond, including an embodiment focused on SiC

X

Patents describing devices (MOFETs, SBDs) or modules that can use WBG selectedfrom SiC, GaN, or Diamond, without any embodiment or preferred solution on SiC

X

Patent claiming systems using SiC but without inventive aspect related to SiC. X



KEY FEATURES OF THE REPORT (1/2)

• The report provides essential patent data for Power SiC MOSFETs, SBDs and modules.

• It provides in-depth patent analyses of key technologies and key players including:

– Time evolution of patent publications and countries of patent filings.

– Current legal status of patents.

– Ranking of main patent applicants.

– Joint developments and IP collaboration network of main patent applicants.

– Key patents.

– Granted patents near expiration.

– Relative strength of main companies IP portfolio.

– Key patents on technology issues.



KEY FEATURES OF THE REPORT (2/2)

• The report also provides an extensive Excel database with all patents analyzed in the report.

This patent database allows multi-criteria searches, including:

- Patent publication number

- Hyperlinks to the original documents

- Priority date

- Title

- Abstract

- Patent assignees

- Technical segmentation

- Legal status for each member of the patent family

Disclaimer: This report does not provide any insight analyses or counsel regarding legal aspects or the validity of anyindividual patent. Knowmade is a research firm that provides technical analysis and technical opinions. Knowmade is not alaw firm. The research, technical analysis and/or work proposed or provided by Knowmade and contained herein is not alegal opinion and should not be construed as such.



OBJECTIVES OF THE REPORT

Understanding the competitive landscape and technology developments from a patent perspective

• Know the key IP players, their key patents, their IP/technologystrategy and their future intents

• Identify new entrants, their technology and market areas of interest

• Follow the technology trends and identify emerging technologies

• Benchmark patent portfolios and know competitors’ strengths andweaknesses

• Identify the key patents (seminal, blocking, valuable) and the keytechnical solutions that address hot technical issues

• Identify free technologies which can be used safely and mitigate therisks of patent infringement

• Identify technologies to acquire and potential R&D partners

• Key market players• Supply chain• Technology Readiness Levels (TRL)• Market product• Emerging technologies/applications• Forecast

Very complementary to market research



SiC MOSFETsPatent assignees, IP dynamics, patent legal status, patent geographical coverage



SiC MOSFETsFocus on key players and new entrants



SiC MOSFETsPatent segmentation: planar MOSFETs, trench MOSFETs, and gate oxide issues



SiC MOSFETsPatent Portfolios Benchmarking: who has the best patent portfolio?

Planar SiC MOSFETs Trench SiC MOSFETs



SiC MOSFETsGate oxide issues: recent patents from key patent applicants



SiC Schottky Barrier Diodes (SBDs)Key IP players, their key patents and their recent patent applications



SiC Schottky Barrier Diodes (SBDs)New entrants and their patents



SiC Power ModulesPatent assignees, IP dynamics, key players, key patents



SiC Power ModulesReview of patent portfolio of main IP leaders and new entrants



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Excel file with all patents analyzed in the reportUseful patent database allows multi-criteria searches

Patent informationDates and numbers of priority/application/publication/grant

Title, abstract, claimsPatent applicants, current assignees, inventors

Current legal status of patents (granted, pending, expired, etc.)

SegmentsPlanar MOSFETs, Trench MOSFETs, Gate oxide,

SBDs, Full SiC power modules, etc.


POWER SiC: MOSFETs, SBDs and ModulesPatent Landscape Analysis – January 2019

The SiC power device market outlook is promising as market adoption is ongoing. Who are the current key IP players for MOSFETs, SBDs and power modules,

and who will have the best IP position in the coming years?

REPORT OUTLINE• Power SiC: MOSFET, SBDs and

Modules• Patent Landscape Analysis• January 2019• PDF >130 slides• Excel file with >3,800 patents• €6,490 for a multi-user license

KEY FEATURES• Competitive landscape from a

patent perspective, offering a verycomplementary vision to marketresearch.

• Key patent owners, their IP andtechnology strategies and theirfuture intents.

• New entrants, their technologyand their market areas of interest.

• Know competitors’ strengths andweaknesses in terms of patentsand technologies.

• Follow technology developments,identify emerging technologies andknow key technical solutions tosolve hot technical issues.

• Identify free technologies whichcan be used safely and to mitigatethe risks of patent infringement.

• Identify technologies to acquireand potential R&D partners.

• Benefit from a useful Exceldatabase with all patents analyzedin the report, including technologysegmentation.

LINKED REPORTS• Power SiC 2018: Materials, Devices

and Applications (YoleDéveloppement)

• Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends (Yole Développement)

• Power Module Packaging 2018: Material Market and Technology Trends (Yole Développement)

• Cree-Wolfspeed (YoleDéveloppement)

• Wolfspeed C2M 1200V SiC MOSFET C2M0025120D (System Plus Consulting)

Power SiC intellectual property (IP): leadership of Japanese players, strongpresence of automotive companies, and Chinese new entrants.

The 2016-2018 period has been crucial for the whole SiC industry. SiC MOSFETs, commerciallyavailable for several years, are gaining the confidence of numerous customers and haveclearly begun to penetrate into different applications. They follow the first commerciallyavailable SiC diodes that appeared on the market over 18 years ago and gradually changedthe market. According to Yole Développement’s report Power SiC 2018, the SiC devicemarket is expected to grow steadily, from $302M in 2017 to more than $1.5B in 2023, at aCompound Annual Growth Rate (CAGR) of 31%.

In this report, Knowmade has thoroughly investigated the patent landscape related to SiC-based power electronics, covering MOSFETs, Schottky Barrier Diodes (SBDs) and powermodules. Today, there is a dichotomy in power SiC patents, with new activity from Chineseplayers on one side and leadership of Japanese players and the strong presence of automotivecompanies on the other.

Key IP players for SiC MOSFETs, SBDs and power modules

Knowmade © 2019

We witnessed a remarkable acceleration in patent filing related to SiC MOSFETs between2011 and 2015, concomitant with the commercialization of the first SiC MOSFET products.Japanese integrators – especially Denso and Fuji Electric – have taken the lead in SiCMOSFET related patenting activity. China has entered the SiC MOSFET patent landscape inrecent years, starting with R&D players in 2011, who were followed by major state-ownedintegrator companies in 2015 such as State Grid Corporation of Chine (SGCC), CRRC and SiCpure player foundry Century Goldray, which was established in 2010 to address the wholepower SiC supply chain. A common feature of these new entrants is that they intend todevelop IP on both planar and trench MOSFET structures. Taiwan has a long standing R&Dplayer in SiC MOSFETs with ITRI, but there was no industrial player until 2016, when HestiaPower emerged, focused on cost effective planar junction barrier Schottky (JBS) diode-integrated MOSFET structures. We note that current leading SiC device makers likeCree/Wolfspeed, Rohm, Infineon and STMicroelectonics own some key patents but do notnecessarily have strong IP leadership.

Japanese integrators are leading SiC MOSFET-related patenting activity

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The share of full SiC module-relatedpatents has been growing since 2012.Mitsubishi Electric is leading the SiCpower module IP race with key patentsmostly focused on hybrid Si/SiC modules.In this report we detail the patentportfolio of the main IP leaders likeMitsubishi Electric, Hitachi, Rohm andCREE/Wolfspeed and the new entrantDanfoss Silicon Power. Rohm’s recentpatenting activity puts the emphasis onthe use of full SiC modules in electricvehicles, stressing solutions to efficientheat dissipation, the reliability of powermodule assemblies operating at hightemperature and the reduction of strayinductance. Danfoss filed four patentsrelated to full SiC MOSFET modules in2018, focusing on enhancement ofperformance through optimized layout ofinterconnects inside the module.

CREE/Wolfspeed has taken the lead in the planar SiC MOSFET IP race, well ahead of its main competitors Mitsubishi Electric and FujiElectric. The analysis of Cree’s patent portfolio shows it can effectively limit patenting activity in the field and control the freedom-to-operate in most countries including Japan. In fact, patenting activity from competitors is not ramping up and does not threaten CREE’sIP leadership. The strong leadership of CREE/Wolfspeed as well as the growing maturity of planar SiC MOSFET technology could explaina slowdown in patenting activity since 2015.

Planar SiC MOSFETs vs. Trench SiC MOSFETs

SiC SBDs: revealing the recent patenting activity from key players and new entrantsCREE/Wolfspeed and Mitsubishi Electric share the IP leadership in SiC SBDs, and with Fuji Electric and Sumitomo Electric they arecurrently the most active patent applicants. In this report we detail the recent patents from key IP players and new entrants. Mostpatent applicants address reliability issues related to the edge termination regions, including Mitsubishi Electric, Fuji Electric, Toshibaand Panasonic. Additionally, both CREE/Wolfspeed and Mitsubishi Electric are developing Schottky devices with a superjunctionstructure. Some new inventions deal with increasing current capability of JBS diodes, including from Panasonic, Denso, Fuji Electric,and Infineon, and improving the stability when the device temperature rises, in patents from Panasonic and Fuji Electric. New entrantsare exclusively Chinese players, including Century Goldray and SGCC. Their patents mainly relate to JBS diodes and are only filed inChina for the moment.

Power SiC: MOSFETs, SBDs and Modules – Patent Landscape Analysis – January 2019

Time evolution of patent publications for SiC power modules

Knowmade © 2019

IP leadership of patent assignees for trench SiC MOSFETs

Knowmade © 2019

Denso leads the IP race in trench SiCMOSFETs, well ahead of Fuji Electric.However, the latter could seriouslychallenge in coming years, provided that asignificant number of its pending patentapplications are granted. The situationdiffers from planar SiC MOSFETs, withvarious patent applicants such as ToyotaMotor, Toyota Central R&D Laboratories(CRDL), Sumitomo Electric and Rohm stillactive. There seems to be more room forchallengers in the trench SiC MOSFET IPcompetition, although Denso is activelystrengthening its leadership through thecollaboration with Toyota Motor andToyota CRDL in the context of theacceleration of SiC power technologies’development for electric and hybridelectric vehicle (EV/HEV) applications.CREE/Wolfspeed’s IP portfolio is relativelysmall in trench SiC MOSFETs with respectto planar SiC MOSFETs, but the companyowns several key patents as it started topatent important inventions before mostcompetitors.

A significant fraction of patents related to trench SiC MOSFETs concern the protection ofthe gate oxide material from electric field concentration in certain portions of the gate.In this report we go through recent developments from major IP players to addressreliability issues due to gate oxides.

Full SiC power modules

TABLE OF CONTENTS

ABOUT KNOWMADESpecialized in the analysis of patents and scientific information, Knowmade provides technology intelligence and IP strategy consultingservices. The company supports the business development of R&D organizations, industrial companies, and investors by helping them tounderstand the competitive landscape, follow the technology trends, and find out opportunities and threats in terms of technology andpatents.Knowmade operates in the following industrial sectors: compound semiconductors, power electronics, batteries, RF electronics &wireless communications, solid-state lighting & display, photonics, MEMS sensors, memories, semiconductor manufacturing, packaging &assembly, medical devices, medical imaging, biotech/pharma, and agri-food.Knowmade’s experts provide prior art search, patent landscape analysis, scientific literature analysis, patent valuation, IP due diligence,and freedom-to-operate analysis. The company also delivers litigation/licensing support, technology scouting, and IP/technologyobservation. Knowmade’s analysts combine their technical and patent expertise with powerful analytics tools and proprietarymethodologies, delivering invaluable patent analyses and scientific reviews.

Dr. Nicolas BaronNicolas is CEO and co-founder of Knowmade.He manages the development and strategicorientations of the company and personallyleads the Electronics & Telecom department.He holds a PhD in Physics from the University ofNice Sophia-Antipolis, and a Master ofIntellectual Property Strategies and Innovationfrom the European Institute for Enterprise andIntellectual Property (IEEPI) in Strasbourg,France.Contact: [email protected]

AUTHORS

COMPANIES MENTIONED IN THE REPORT (NON-EXHAUSTIVE)Denso, Cree, Wolfspeed, Fuji Electric, Toyota Motor, Mitsubishi Electric, Sumitomo Electric, Rohm, General Electric, Hitachi, Toyota Central R&D Labs,Xidian University, Panasonic, Hyundai Motor, CRRC Times Electric, Century Goldray Semiconductor, Infineon, State Grid Corporation of China (SGCC),Hestia Power, Nissan Motor, Siemens, NXP, Toshiba, Philips, Microsemi, Littelfuse, IXYS, Monolith Semiconductor, Renesas Electronics, Bosch, ABB,Shindengen Electric Manufacturing, Showa Denko, Kansai Electric Power, On Semiconductor, Beijing Yandong Microelectronic, Tyco TianrunSemiconductor Technology, Shenzhen Basic Semiconductor, Sharp, Guangdong Midea, Siemens, Danfoss Silicon Power, Wancheng Electric VehicleOperation, Yangzhou Guoyang Electronic, Tyco Tianrun Semiconductor Technology, Schneider Electric, Dynex Semiconductor, Honda Motor, etc.

INTRODUCTION 5

METHODOLOGY 13

EXECUTIVE SUMMARY 18

SiC MOSFETs 36

Patent landscape overview 40

• Time evolution of patent publications• Leading patent applicants• Main patent applicants by country of head office• Main IP players: Number of patents and current legal status• Time evolution of main patent applicants• Most current active players• Focus on CREE/Wolfspeed• New entrants• Focus on Hestia Power• Geographic coverage of patent filings and corresponding current legal

status of patents• Main patent assignees vs. Countries of granted/pending patents• Patents recently expired• Patents near expiration date• ConclusionPatent segmentation 60

For each planar MOSFET, trench MOSFET and gate oxide:- Time evolution of patent publications- Main patent assignees- IP trends for main patent applicants• Planar SiC MOSFET 70

- IP leadership of patent assignees- IP blocking potential of patent assignees- Strength of patent portfolios- Key patent families

• Trench SiC MOSFET 75- IP leadership of patent assignees- IP blocking potential of patent assignees- Strength of patent portfolios- Key patent families

• Gate oxide 80Recent developments from major IP players to address reliability issues due to gate oxide in SiC trench MOSFET.

SiC SCHOTTKY BARRIER DIODE 91

• Time evolution of patent applicants• IP leadership of patent assignees• Key patent families• Historical patent applicants and their recent patents• New entrants and their patents• Conclusion

SiC POWER MODULE 114

• Time evolution of patent publications• Time evolution of main patent applicants• IP leadership of patent assignees• Full SiC power modules• Hybrid SiC power modules• Key patent families• Review of portfolio for IP leaders• Focus on new entrants• Conclusion

CONCLUSION 135

KNOWMADE PRESENTATION 141

Power SiC: MOSFETs, SBDs and Modules – Patent Landscape Analysis – January 2019

Dr. Rémi ComynRémi works for Knowmade in the field ofCompound Semiconductors and Electronics. Heholds a PhD in Physics from the University ofNice Sophia-Antipolis in France in partnershipwith CRHEA-CNRS, also located in Sophia-Antipolis, France, and the University ofSherbrooke in Québec, Canada. Rémi has alsoworked in a compound semiconductorresearch laboratory as a research engineer.Contact: [email protected]

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2.3 The mailing of the Product will occur only upon payment by the Buyer, in accordance with the conditions contained in article 3.

2.4. The mailing is operated through electronic means either by email via the sales department or automatically online via an email/password. If the Product’s electronic delivery format is defective, the Seller undertakes to replace it at

no charge to the Buyer provided that it is informed of the defective formatting within 90 days from the date of the original download or receipt of the Product.

2.5 The person receiving the Products on behalf of the Buyer shall immediately verify the quality of the Products and their conformity to the order. Any claim for apparent defects or for non-conformity shall be sent in writing to the

Seller within 8 days of receipt of the Products. For this purpose, the Buyer agrees to produce sufficient evidence of such defects. .

2.6 No return of Products shall be accepted without prior information to the Seller, even in case of delayed delivery. Any Product returned to the Seller without providing prior information to the Seller as required under article 2.5 shall

remain at the Buyer’s risk.

3. Price, invoicing and payment

3.1 Prices are given in the orders corresponding to each Product sold on a unit basis or corresponding to annual subscriptions. They are expressed to be inclusive of all taxes. The prices may be reevaluated from time to time. The

effective price is deemed to be the one applicable at the time of the order.

3.2 Yole may offer a pre release discount for the companies willing to acquire in the future the specific report and agreeing on the fact that the report may be release later than the anticipated release date. In exchange to this

uncertainty, the company will get a discount that can vary from 15% to 10%.

3.3 Payments due by the Buyer shall be sent by cheque payable to Yole Développement, credit card or by electronic transfer to the following account:

HSBC, 1 place de la Bourse 69002 Lyon France

Bank code: 30056

Branch code: 00170

Account n°: 0170 200 1565 87

BIC or SWIFT code: CCFRFRPP

IBAN: FR76 3005 6001 7001 7020 0156 587

To ensure the payments, the Seller reserves the right to request down payments from the Buyer. In this case, the need of down payments will be mentioned on the order.

3.4 Payment is due by the Buyer to the Seller within 30 days from invoice date, except in the case of a particular written agreement. If the Buyer fails to pay within this time and fails to contact the Seller, the latter shall be entitled to

invoice interest in arrears based on the annual rate Refi of the «BCE» + 7 points, in accordance with article L. 441-6 of the French Commercial Code. Our publications (report, database, tool...) are delivered only after reception of the

payment.

3.5 In the event of termination of the contract, or of misconduct, during the contract, the Seller will have the right to invoice at the stage in progress, and to take legal action for damages.

4. Liabilities

4.1 The Buyer or any other individual or legal person acting on its behalf, being a business user buying the Products for its business activities, shall be solely responsible for choosing the Products and for the use and interpretations

he makes of the documents it purchases, of the results he obtains, and of the advice and acts it deduces thereof.

4.2 The Seller shall only be liable for (i) direct and (ii) foreseeable pecuniary loss, caused by the Products or arising from a material breach of this agreement

4.3 In no event shall the Seller be liable for:

a) damages of any kind, including without limitation, incidental or consequential damages (including, but not limited to, damages for loss of profits, business interruption and loss of programs or information) arising out of the use of or

inability to use the Seller’s website or the Products, or any information provided on the website, or in the Products;

b) any claim attributable to errors, omissions or other inaccuracies in the Product or interpretations thereof.

4.4All the information contained in the Products has been obtained from sources believed to be reliable. The Seller does not warrant the accuracy, completeness adequacy or reliability of such information, which cannot be guaranteed

to be free from errors.

4.5 All the Products that the Seller sells may, upon prior notice to the Buyer from time to time be modified by or substituted with similar Products meeting the needs of the Buyer. This modification shall not lead to the liability of the

Seller, provided that the Seller ensures the substituted Product is similar to the Product initially ordered.

4.6 In the case where, after inspection, it is acknowledged that the Products contain defects, the Seller undertakes to replace the defective products as far as the supplies allow and without indemnities or compensation of any kind for

labor costs, delays, loss caused or any other reason. The replacement is guaranteed for a maximum of two months starting from the delivery date. Any replacement is excluded for any event as set out in article 5 below.

4.7 The deadlines that the Seller is asked to state for the mailing of the Products are given for information only and are not guaranteed. If such deadlines are not met, it shall not lead to any damages or cancellation of the orders,

except for non acceptable delays exceeding [4] months from the stated deadline, without information from the Seller. In such case only, the Buyer shall be entitled to ask for a reimbursement of its first down payment to the exclusion of

any further damages.

4.8 The Seller does not make any warranties, express or implied, including, without limitation, those of sale ability and fitness for a particular purpose, with respect to the Products. Although the Seller shall take reasonable steps to

screen Products for infection of viruses, worms, Trojan horses or other codes containing contaminating or destructive properties before making the Products available, the Seller cannot guarantee that any Product will be free from

infection.

5. Force majeure

The Seller shall not be liable for any delay in performance directly or indirectly caused by or resulting from acts of nature, fire, flood, accident, riot, war, government intervention, embargoes, strikes, labor difficulties, equipment failure,

late deliveries by suppliers or other difficulties which are beyond the control, and not the fault of the Seller.

6. Protection of the Seller’s IPR

6.1 All the IPR attached to the Products are and remain the property of the Seller and are protected under French and international copyright law and conventions.

6.2 The Buyer agreed not to disclose, copy, reproduce, redistribute, resell or publish the Product, or any part of it to any other party other than employees of its company. The Buyer shall have the right to use the Products solely for

its own internal information purposes. In particular, the Buyer shall therefore not use the Product for purposes such as:

- Information storage and retrieval systems;

- Recordings and re-transmittals over any network (including any local area network);

- Use in any timesharing, service bureau, bulletin board or similar arrangement or public display;

- Posting any Product to any other online service (including bulletin boards or the Internet);

- Licensing, leasing, selling, offering for sale or assigning the Product.

6.3 The Buyer shall be solely responsible towards the Seller of all infringements of this obligation, whether this infringement comes from its employees or any person to whom the Buyer has sent the Products and shall personally

take care of any related proceedings, and the Buyer shall bear related financial consequences in their entirety.

6.4 The Buyer shall define within its company point of contact for the needs of the contract. This person will be the recipient of each new report in PDF format. This person shall also be responsible for respect of the copyrights and

will guaranty that the Products are not disseminated out of the company.

6.5 In the context of annual subscriptions, the person of contact shall decide who within the Buyer, shall be entitled to access on line the reports on I-micronews.com. In this respect, the Seller will give the Buyer a maximum of 10

password, unless the multiple sites organization of the Buyer requires more passwords. The Seller reserves the right to check from time to time the correct use of this password.

6.6 In the case of a multisite, multi license, only the employee of the buyer can access the report or the employee of the companies in which the buyer have 100% shares. As a matter of fact the investor of a company, the joint

venture done with a third party etc..cannot access the report and should pay a full license price.

7. Termination

7.1 If the Buyer cancels the order in whole or in part or postpones the date of mailing, the Buyer shall indemnify the Seller for the entire costs that have been incurred as at the date of notification by the Buyer of such delay or

cancellation. This may also apply for any other direct or indirect consequential loss that may be borne by the Seller, following this decision.

7.2 In the event of breach by one Party under these conditions or the order, the non-breaching Party may send a notification to the other by recorded delivery letter upon which, after a period of thirty (30) days without solving the

problem, the non-breaching Party shall be entitled to terminate all the pending orders, without being liable for any compensation.

8. Miscellaneous

All the provisions of these Terms and Conditions are for the benefit of the Seller itself, but also for its licensors, employees and agents. Each of them is entitled to assert and enforce those provisions against the Buyer.

Any notices under these Terms and Conditions shall be given in writing. They shall be effective upon receipt by the other Party.

The Seller may, from time to time, update these Terms and Conditions and the Buyer, is deemed to have accepted the latest version of these terms and conditions, provided they have been communicated to him in due time.

9. Governing law and jurisdiction

9.1 Any dispute arising out or linked to these Terms and Conditions or to any contract (orders) entered into in application of these Terms and Conditions shall be settled by the French Commercial Courts of Lyon, which shall have

exclusive jurisdiction upon such issues.

9.2 French law shall govern the relation between the Buyer and the Seller, in accordance with these Terms and Conditions.



WHAT WE DO

PatentsTechnologies

Prior artScientific findings

OpportunitiesPartners

CompetitorsNewcomers

M&A targets

Patent landscape analysisScientific reviewIP portfolio assessmentPatent valuationFreedom-to-operate analysisLitigation & licensing supportPatents linked to productsTechnology scoutingTechnology trendsCompetitive IP landscapeMarket trendsReverse engineering

Make strategic decisionsSustain competitive advantages

Speed R&D and enhance innovation processAlign R&D and IP with key business objectives

Strengthen IP portfolio and acquire technologiesAnticipate risks and defend core businessesExplore new opportunities and monetize IP

Knowmade helps customers to understand

the competitive landscape, follow technology trends, and find out opportunities and threats in terms of technology and patents.

Interpreting the competitive landscape and technology developments throughoutpatents and scientific information.

Turning patents and scientific information into business intelligence tools that giveyou the capability to

• Understand your competitive environment

• Be ahead of technology trends

• Identify patent & technology opportunities

• Assess patent & technology risks

• Define your IP and R&D strategy

• Monetize your technologies and know-how

• Defend your business

Strong technology expertise with an in-depth knowledge of patents.

Highly specialized analysts in the following sectors:

Electronics, Telecommunications and Photonics

Compound semiconductors, Power electronics, Batteries, Memories, RF electronics, Wirelesscommunications, Solid-state lighting & display, Photonics, MEMS Sensors & Actuators,Semiconductor manufacturing, Packaging & Assembly.

Life Sciences, Healthcare and Agri-Food

Medical devices, Medical imaging, Microfluidics, Biotechnology, Pharmaceutics, Food-processing



WHAT WE PROPOSE

Tailor-made analyses to meet your business needs and budgetary

constraints


Patent-to-Product Mapping

Patent Portfolio Analysis

Patent Monitors

Tailor made to respond your requests

Direct interaction between your team and our experts at your site

Off the shelf reports and

analyses

Dedicated analyses

Workshops and trainings



WHAT IS OUR ADDED VALUE

Patent Search

Strong technical expertise of ouranalysts with PhD degree

• Comprehensive search queriesand keywords

• Manual selection of relevant and related patents

• Manual segmentation by technology & application

Analytics

State of the art statistical tools

Innovative methodologies to deliver relevant IP analysis

Business oriented data representation and graphics

Results Analysis

Technical expertise

• Highly specialized analysts in your field

• Benefit from knowledgecapitalization

In-depth IP analysis combinedwith market data and reverse engineering *

Customer support

* Our partners



CUSTOM STUDY & CONSULTINGTailor-made analysis to meet your needs and budgetary constraints

Prior art search

Patent landscape analysis

Scientific literature analysis

IP/Tech watch service

Patent assessment

Freedom-to-operate

analysis

Litigation & licensing

support

Technology scouting

IP due diligence

Prior art searchEvaluate the patentability of your invention in thecourse of a patent filing.Invalidate competitor’s patents in the course ofpatent litigation or in anticipation of one.Make third-party observations concerning thepatentability of competitor’s inventions.

Patent landscape analysisUnderstand the competitive environment and thetechnology trends from a patent perspective.Identify key players, their IP strategy and their keypatents.Know IP collaborations, licensing agreements andlitigation history.

Freedom-to-operate analysisAssess the risks to infringe third-party patents.Ensure that your products/processes can be safelymanufactured, sold and used in specific countrieswithout infringing patents held by others.

IP due diligenceAssess the patent portfolio of a company andreveal the SWOT matrix prior to patentacquisition/sale, licensing agreement or M&A.

Scientific literature analysisPinpoint key research findings and new emergingresearch fields, key laboratories and scientificexperts, industrial/academic researchcollaborations, and identify prospective R&Dpartners.

Patent assessmentIdentify most valuable patents prior to patentacquisition/sales, licensing agreement, capitalfundraising process, M&A or IP due diligence.Estimate the financial value of your patentportfolio.

Litigation and licensing supportEvidence of infringement/non-infringement foroffensive/defensive support.Defend your position in licensing negotiation orpatent litigation.

IP & Technology watch serviceFollow IP/technology trends, keep a watch onyour competitors and identify new entrants,anticipate the changes, early detect businessopportunities and mitigate the risks.

Technology scoutingIdentify, qualify and get access to externalinnovation.



OFF THE SHELF REPORTS « Pre-packaged » analysis

Knowmade team of experts work all year long to collect patent and scientific information, identify and analyze the trends, thechallenges, the emerging technologies, the competitive environments, and turn it into results to give you a complete picture of yourindustry landscape.Every year, Knowmade publishes a comprehensive collection of reports in various technology fields. These fact-based analyses canprovide you with the reliable information you need to advance your business and your competitive position.



OFF THE SHELF REPORTS 2019 reports collection

COMPOUND SEMICONDUCTORS• GaN-on-Silicon Substrate: Materials, Devices and Applications – Patent Landscape 2019*• RF GaN: Materials, Devices and Applications – Patent Landscape 2019*• Power SiC: MOSFETs, SBDs and Modules – Patent Landscape 2019• Power GaN: Materials, Devices and Applications – Patent Landscape 2019*• Patent Trolls in the Semiconductor Market – Litigation Risk and Potential Targets 2017

POWER ELECTRONICS• Power SiC: MOSFETs, SBDs and Modules – Patent Landscape 2019• Power GaN: Materials, Devices and Applications – Patent Landscape 2019*• Fast Charging Technologies – Patent Landscape 2019*• Wireless Power Charging – Patent Landscape 2017

BATTERY AND ENERGY MANAGEMENT• Solid-State Batteries – Patent Landscape 2019*• Battery Energy Density Increase – Patent Landscape 2019*• Status of the Battery Patents – Patent Landscape 2018• NMC Li-ion Batteries – Patent Landscape 2017

RF DEVICES & TECHNOLOGIES• Antenna for 5G Wireless Communications – Patent Landscape 2019*• RF Filter for 5G Wireless Communications – Patent Landscape 2019*• RF GaN: Materials, Devices and Applications – Patent Landscape 2019*• RF Front End Module for Cellphones – Patent Landscape 2018• RF Acoustic Wave Filters: SAW, FBAR, SMR-BAW – Patent Landscape 2017

PHOTONICS & OPTOELECTRONICS• Silicon Photonics for Data Centers: Optical Transceiver – Patent Landscape 2019*• VCSEL – Patent Landscape 2018• LiDAR for Automotive – Patent Landscape 2018

DISPLAY• MicroLED Displays – Patent Landscape 2018

IMAGING• Facial & Gesture Recognition Technlogies in Mobile Devices – Patent Landscape 2019*• VCSEL – Patent Landscape 2018• LiDAR for Automotive – Patent Landscape 2018• iPhone X Proximity Sensor and Flood Illuminator – Patent-to-Product Mapping 2018

MEDICAL IMAGING & BIOPHOTONICS• Optical Coherence Tomography Medical Imaging – Patent Landscape 2018• Biomedical Photoacoustic Imaging – Patent Landscape 2015

SEMICONDUCTOR MANUFACTURING & PACKAGING• Hybrid Bonding for 3D Stack – Patent Landscape 2019*• Fan-Out Wafer/Panel Level Packaging – Patent Landscape 2019*• Fan-Out Wafer Level Packaging - Patent Landscape 2016

MEMORY• Magnetoresistive Random-Access Memory (MRAM) – Patent Landscape 2019*• 3D Non-Volatile Memories – Patent Landscape 2018• Patent Trolls in the Semiconductor Market – Litigation Risk and Potential Targets 2017• TSV Stacked Memories – Patent Landscape 2016

MEMS & SENSORS• MEMS Foundry Business IP Portfolio – Patent Portfolio Analysis 2019*• Miniaturized Gas Sensors – Patent Landscape 2019*• LiDAR for Automotive - Patent Landscape 2018• iPhone X Proximity Sensor and Flood Illuminator - Patent-to-Product Mapping 2018• RF Acoustic Wave Filters - Patent Landscape 2017• Knowles MEMS Microphones in Apple iPhone 7 Plus - Patent-to-Product Mapping 2017• Consumer Physics SCiO Molecular Sensor - Patent-to-Product Mapping 2017

BIOMEMS & MEDICAL MICROSYSTEMS• 3D Cell Printing – Patent Landscape 2019*• Circulating Tumor Cells Isolation – Patent Landscape 2019*• Nanopore Sequencing - Patent Landscape 2019*• Microfluidic Manufacturing Technologies – Patent Landscape 2019*• Pumps for Microfluidics - Patent Landscape 2017• Microfluidic Technologies for Diagnostic Applications - Patent Landscape 2017• Fluidigm - Patent Portfolio Analysis 2017• Non-Invasive Glucose Monitoring - Patent Landscape 2015

BIOTECHNOLOGY & PHARMACEUTICS• Personalized Medicine – Patent Landscape 2019*• 3D Cell Culture Technologies – Patent Landscape 2016

* Coming soon

Complete list of reports on www.knowmade.com




PATENT MONITORSTake advantage of periodic updates on IP activities

CONTENTS

Monthly IP database (Excel file)

• New patent applications

• Patents newly granted

• Patents expired or abandoned

• Transfer of IP rights (re-assignment, licensing)

• Patent litigation & opposition

Quarterly report (PDF slide deck)On a quarterly basis, this report will provide

the IP trends over the three last months, with a

close look to key IP players and key patented

technologies.

Access to IP analysts (100h a year)On-demand Q&A and discussion session with

our analysts on specific patented technologies

or company IP portfolios

ANNUAL SUBSCRIPTION

30 000 € per unit

GaN Power & RF

GaN Opto & Photonics

Li-ion Battery

Post Li-ion Battery

Solid-State Battery

RF Acoustic Wave Filter

RF Power Amplifier

RF Front-End Module

MicrofluidicsWHY YOU SHOULD SUBSCRIBE

Track your competitors, partners or clients Identify newcomers to your technology field Early detect opportunities and risks for your business strategy Be ahead of technology trends Identify emerging research areas and cutting-edge technology developments Mitigate patent infringement risks Take advantage of free technologies

If you are interested in more than one monitor or by an other topic, please contact us.

[email protected] | www.knowmade.com

PATENT MONITORS

2019



CONTACT

o Consulting and Specific Analysis

– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.Email: [email protected]

– Europe: Lizzie Levenez, Europe Middle East and Africa Business Development Manager, Yole DéveloppementEmail: [email protected]

– Japan: Takashi Onozawa, General Manager, Yole Japan & President, Yole K.K.Email: [email protected]

– RoW: Jean-Christophe Eloy, President & CEO, Yole Développement, Email: [email protected]

o Report business

– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.Email: [email protected]

– Europe: Lizzie Levenez, Europe Middle East and Africa Business Development Manager, Yole DéveloppementEmail: [email protected]

– Japan: Miho Ohtake, Japan Sales Manager, Yole K.K., Email: [email protected]

– Greater China: Mavis Wang, Business Development Manager, Yole China - [email protected]

– Rest of Asia: Takashi Onozawa, President & General Manager, Yole K.K., Email: [email protected]

o Financial services

– Jean-Christophe Eloy, CEO & President, Email: [email protected]

o General: Email: [email protected]

KnowMade SARL2405 route des Dolines

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Patent & Technology Intelligence

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