poweramerica next generation power · 2017-12-20 ·...

Agenda Wide Bandgap Devices and Applications Short Course Nov. 79, 2017 PowerAmerica Offices, 930 Main Campus Dr., Suite 200, Raleigh, NC Tuesday, Nov. 7 8 AM8:30 AM Registration/Breakfast/Opening Remarks 8:30 AM–10:15 AM Power GaN Transistor Design Fundamentals and Application David Reusch, EPC 10:15 AM10:30 AM Break 10:30 AM11:15 AM Power GaN Transistor Design Fundamentals and Application David Reusch, EPC 11:15 AM12:30 PM Practical Implementation of SiC MOSFETs for Power Converter Design David Levett, Infineon 12:30 PM1:15PM Lunch 1:15 PM2:15 PM Practical Implementation of SiC MOSFETs for Power Converter Design David Levett, Infineon 2:15 PM2:30 PM Break 2:30 PM4:00 PM Introduction to WBG Module Packaging and Impact on Circuit Design Doug Hopkins, N.C. State University 4:00 PM4:10 PM Break 4:10 PM5:30 PM Introduction to WBG Module Packaging and Impact on Circuit Design Doug Hopkins, N.C. State University Wednesday, Nov. 8 8:00 AM8:15 AM Breakfast 8:15 AM9:15 AM Introduction to WBG Module Packaging and Impact on Circuit Design Robert Shawn, Wolfspeed 9:15 AM9:30 AM Break 9:30 AM10:20 AM MV Fast Charger System Specification, Design Requirements Srdjan Lukic, N.C. State University 10:20 AM10:30 AM Break 10:30 AM11:20 AM WBG SiC Inverter for Electric and Hybrid Vehicles Iqbal Husain, N.C. State University 11:20 AM11:30 AM Break P OWERAMERICA Next Generation Power Electronics Manufacturing Innovation Institute

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Page 1: POWERAMERICA Next Generation Power · 2017-12-20 · Power!GaN!Transistor!DesignFundamentals!and!Application! David!Reusch,EPC! 10:15!AM%10:30!AM! Break! 10:30!AM%11:15!AM! Power!GaN!Transistor!DesignFundamentals!andApplication!

Agenda Wide Bandgap Devices and Applications Short Course

Nov. 7-‐9, 2017 PowerAmerica Offices, 930 Main Campus Dr., Suite 200, Raleigh, NC

Tuesday, Nov. 7 8 AM-‐8:30 AM Registration/Breakfast/Opening Remarks 8:30 AM–10:15 AM Power GaN Transistor Design Fundamentals and Application

David Reusch, EPC 10:15 AM-‐10:30 AM Break 10:30 AM-‐11:15 AM Power GaN Transistor Design Fundamentals and Application

David Reusch, EPC 11:15 AM-‐12:30 PM Practical Implementation of SiC MOSFETs for Power Converter

Design David Levett, Infineon

12:30 PM-‐1:15PM Lunch 1:15 PM-‐2:15 PM Practical Implementation of SiC MOSFETs for Power Converter

Design David Levett, Infineon

2:15 PM-‐2:30 PM Break 2:30 PM-‐4:00 PM Introduction to WBG Module Packaging and Impact on Circuit

Design Doug Hopkins, N.C. State University

4:00 PM-‐4:10 PM Break 4:10 PM-‐5:30 PM Introduction to WBG Module Packaging and Impact on Circuit

Design Doug Hopkins, N.C. State University

Wednesday, Nov. 8 8:00 AM-‐8:15 AM Breakfast 8:15 AM-‐9:15 AM Introduction to WBG Module Packaging and Impact on Circuit Design

Robert Shawn, Wolfspeed 9:15 AM-‐9:30 AM Break 9:30 AM-‐10:20 AM MV Fast Charger System Specification, Design Requirements

Srdjan Lukic, N.C. State University 10:20 AM-‐10:30 AM Break 10:30 AM-‐11:20 AM WBG SiC Inverter for Electric and Hybrid Vehicles

Iqbal Husain, N.C. State University 11:20 AM-‐11:30 AM Break

POWERAMERICANext Generation Power Electronics Manufacturing Innovation Institute

Page 2: POWERAMERICA Next Generation Power · 2017-12-20 · Power!GaN!Transistor!DesignFundamentals!and!Application! David!Reusch,EPC! 10:15!AM%10:30!AM! Break! 10:30!AM%11:15!AM! Power!GaN!Transistor!DesignFundamentals!andApplication!

11:30 AM-‐12:20 PM High Voltage SiC Power Device Characterization and Converter Applications Subhashish Bhattacharya, N.C. State University

12:20 PM-‐1:00 PM Lunch 1:00 PM-‐5:30 PM Packaging Lab Module

Fab and Testing Lab Module Applications Lab Module Attendees will be divided into three groups and rotate through three teaching modules

1:00PM-‐2:30PM 2:30PM-‐4:00PM 4:00PM-‐5:30PM Group A Packaging lab module Fab lab module(2:30PM-‐3:00PM)

Testing lab module(3:15PM-‐3:45PM) System lab module

Group B Fab lab module(1PM-‐1:30PM) Testing lab module(1:45PM-‐2:15PM)

System lab module Packaging lab module

Group C System lab module Packaging lab module Fab lab module(4PM-‐4:30PM) Testing lab module(4:45PM-‐5:15PM)

6:00 PM-‐8:30PM Networking Dinner Reception

Thursday, Nov. 9 8:00 AM-‐8:30 AM Breakfast 8:30 AM-‐9:00AM SiC Bulk Substrate: Advantages, Challenges and Solutions

Elif Balkas, Wolfspeed 9:00 AM-‐9:40 AM SiC Epitaxial Technology

Al Burk, Wolfspeed 9:40 AM-‐9:50 AM Break 9:50 AM-‐11:20 AM SiC Design, Fabrication, Roadmap and Cost Analysis

Victor Veliadis, PowerAmerica 11:20 AM-‐11:30 AM Break 11:30 AM-‐12:30 PM Wide Bandgap Testing Techniques

Teja Kothamasu, Keysight Technologies 12:30 PM Adjourn

gan-tr Application Note - Panasonic · 3 Semiconductor Business Unit, Panasonic Semiconductor Solutions Co,.Ltd Limited 1. Introduction Disclosure Panasonic GaN Power Transistor features

EPC2103 – Enhancement-Mode GaN Power Transistor Half-Bridge

RF Power GaN on SiC Transistor Depletion Mode …cache.nxp.com/files/rf_if/doc/data_sheet/MMRF5015N.pdfMMRF5015N 1 RF Device Data Freescale Semiconductor, Inc. RF Power GaN on SiC

GaN Transistor Comparison 2018 - System Plus€¦ · EPC 2017 EPC2045 p-GaN gate Gen 5 WLP 100 16 0.007 5.2 EPC 2016 EPC2040 p-GaN gate gen 4 WLP 15 3.4 0.030 0.745 TI 2017 LMG5200

Highly Efficient, High Power Density GaN-based DC-DC ... 3... · • GaN transistor technology can greatly improve efficiency compared to Si technology • The DC-DC converter demonstrator

GS-065-011-1-L Bottom-side cooled 650 V E-mode GaN ... · The GS-065-011-1-L is an enhancement mode GaN- on-silicon power transistor. The properties of GaN allow for high current,

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EPC2108 – Enhancement-Mode GaN Power Transistor Half

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Low-Cost Gallium Nitride Vertical Transistor Meeting... · GaN vertical diode & transistor switch 800V 30kW 40kHz GaN EPI, Device fabrication, Characterization Power Circuits/Modules

GaN Transistor Large-Signal Characterization Under …ecee.colorado.edu/microwave/docs/publications/2015/S...GaN Transistor Large-Signal Characterization Under Multi-Frequency Excitation

GaN high electron mobility transistor structures Rapid ...ww2.che.ufl.edu/ren/paper/2017 p18.pdfRapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN

Multi-physic Analysis for GaN Transistor PCB Layout · Multi-physic Analysis for GaN Transistor PCB Layout Bainan Sun, Kasper Luthje Jørgensen, Zhe Zhang, Michael A.E. Andersen¨

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MOCVD growth of GaN-based high electron mobility ...liu.diva-portal.org/smash/get/diva2:805922/FULLTEXT01.pdf · MOCVD growth of GaN-based high electron mobility transistor ... density

GS66516B Bottom-side cooled 650 V E-mode GaN transistor ... DS Rev 171101-1222299.pdf · Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet ... • High efficiency

GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC … · 2019. 3. 18. · GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V1 MAGX-000035-01000P

Panasonic GaN Powerindustrial.panasonic.com/.../ds/ds8/c2/OTH_APEC2018_exhibitor_seminar_GaN_EN.pdf · First of Normally OFF GaN power Transistor qualifying Mass Production. Fully

AlGaN/GaN High Electron Mobility Transistor Based …cdn.intechopen.com/pdfs/16476/InTech-Algan_gan_high...2 AlGaN/GaN High Electron Mobility Transistor Based Sensors for Bio-Applications

RF Power GaN Transistor MMRF5014H

PGA26E07BA-SWEVB008 Half Bridge Evaluation Board...Half Bridge Evaluation Board consisting: 1. PGA26E07BA 600V 56mΩ X-GaN Power Transistor 2. AN34092B Single channel X-GaN Gate Driver

CGH40006S, 6W, QFNL, GaN HEMT by Cree for … · CGH40006S 6 W, RF Power GaN HEMT, ... gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, ... ARY R e v

CGH40010, 10W, GaN HEMT by Cree / Wolfspeed for … · mobility transistor ... compressed amplifier circuits. The transistor is available in both screw- ... Charge Device Model CDM

AlGaN/GaN High Electron Mobility Transistor Based …...2 AlGaN/GaN High Electron Mobility Transistor Based Sensors for Bio-Applications Fan Ren 1, Stephen J. Pearton 2, Byoung Sam

600V GaN Power Transistor Available Features Current ... GaN Power Transistor Applications Power Supply for Data Centers / Base Transceiver Stations Automotive ( HEV / EV / PHEV )

GS61004B 100V enhancement mode GaN transistor Features · the reverse conduction loss. For more details, please refer tothe gate driver application note "GN001 How to Drive GaN Enhancement

Cohenius CGL65R150B 650V enhancement-mode GaN Power Transistor

ACPL-P346: Panasonic X-GaN Transistor PGA26E07BA Half ... · ACPL-P346 Reference Manual Panasonic X-GaN Transistor PGA26E07BA Half Bridge Evaluation Board where: (VDS / dt) = (70V

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DC 1.7 GHz, 50 V, 500 W GaN RF Transistor The QorvoQPD1016 DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor Datasheet Rev. A, December 16, 2016 | Subject to change without notice - 1