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Product / ProcessChange Notification

N° 2012-134-B !! UPDATE !!

Updated Information in BLUE TYPE

Original PCN N° 2012-134-A dated 15. November 2012

2013-01-30 of 5

Dear Customer,

Attached please find an updated PCN 2012-134-A for your attention.

Updates covered by B version(PCN N°2012-134-B):

1. Products affected:

Product BSP123 L6327 removed. see page 2 and 1_cip12134_b.

2. Description of change :

additional information for Die attach for BSP613P (page 3)

3. Time Schedule::

Start of delivery: date postpone (page 4)

4. Products Discontinuation list:

Product BSP123 L6327 removed see 1_cip12134_b.

Transfer of Assembly to Infineon Technologies (Wuxi), China,implementation of Halogen-free1) mold compound and Copper wire bondingfor products assembled in lead-free package PG-SOT223

This PCN includes a Product Discontinuation Notice refer to attachment 1_cip12134_b

If you have any questions, please do not hesitate to contact your local Sales office.

Disclaimer:If we do not receive any response we consider this as the acceptance of the PCN. After the lastorder date as stated herein, purchase orders related to the unchanged product(s) cannot be accepted.In case the customer rejects this PCN this PCN shall be considered a product discontinuation notice (PD).


N° 2012-134-B !! UPDATE !!



2013-01-30 of 5

SUBJECT OF CHANGE: 1. Transfer of assembly location

2. Implementation of halogen-free1)

mold compound

3. Implementation of Copper wire bonding

PRODUCTS AFFECTED: Products assembled in lead free package PG-SOT223, as listed per

sales code in attachment 1_cip12134_b.

Product BSP123 L6327 removed from affected product list.

REASON OF CHANGE: Infineon expands the production capacity for standard Small Signal

Surface Mount Devices at Infineon Technologies (Wuxi) Co., Ltd.,

China, as previously announced in Information Note 069/09.

This is in line with the Infineon production strategy:

Infineon Wuxi to be a volume manufacturing centre for the Discretes &

Chip Card products.

Halogen-free1)

mold compound material copes with the increasing

requirements from customers for environment-friendly products

according to the WEEE directive.

1)Note:

Halogen-free according to International Electrotechnical Commission

(IEC) Standard IEC 61249-2-21:

- 900 ppm maximum Chlorine

- 900 ppm maximum Bromine

- 1500 ppm maximum total Halogens


N° 2012-134-B !! UPDATE !!



2013-01-30 of 5

DESCRIPTION OF CHANGE: OLD NEW

Assembly Location

Note:

Reflected in Country of Assembly printed onBarcode product label. Illustration see page 4

Infineon Technologies (Malaysia)Sdn. Bhd., Malacca

Infineon Technologies (Wuxi) Co.,Ltd., China

Plating site Infineon Technologies (Malaysia)Sdn. Bhd., Malacca

Subcontractor Technic (suzhou)Semiconductor Eng'g.Co.,Ltd,China

Die attach for BSP613P only

(all other devices remain unchanged)

Die attach: Gluedry packing (MSL3)

Die attach: Eutecticnon dry packing (MSL1)

Mold compound Halogen containing moldcompound

Halogen-free1)

mold compound

Product barcode label

Note:Illustration see page 4

Pb free logo Pb free and halogen-free logo

Wire bonding material Au wire Cu wire

Marking on device Device Marking Device Marking


N° 2012-134-B !! UPDATE !!



2013-01-30 of 5

PRODUCT IDENTIFICATION: External traceability

Barcode Product Label (BPL)

A) Country of assembly: Change from Malaysia to China

B) Halogen-free logo printed on barcode label

C) “L” in sales code will be substituted by “H” to indicate the

halogen free1)

mould compound (see 1_cip12134_b)

D) New customer ordering code (SP number, see 1_cip12134_b)

E) Vgsth grouping

Internal traceability

Ensured via lot number and marking.

TIME SCHEDULE: 2012-134-A 2012-134-B

Final qualification report: See attachment 2_cip12134_a

First samples available: From November 2012 onwards

Start of delivery: From January 2013 onwards

Earlier customer deliveries onspecial customer agreementpossible.

From March 2013 onwards withhighrunner products

Last order date of unchanged product: 15-05-2013

Last delivery date of unchangedproduct:

15-11-2013


N° 2012-134-B !! UPDATE !!



2013-01-30 of 5

ASSESSMENT: Product data sheet values and package dimensions remain

unchanged

Product reliability verified by full product qualification

Advantages of Cu wire compared to Au wire:

- Higher electrical conductivity and thermal conductance.

- Extended stability of bond-pad connections over time.

- Higher current-carrying capacity.

- Less intermetallic phase growth over temperature.

- Copper wire bonding enables an upgrade of the maximum

storage and operating temperature from 150°C to 175°C for

new applications

Infineon Technologies (Wuxi) has already high volume production

experience for Discretes packages. It is one of the TS16949

(Automotive) certified assembly line locations, with production and

delivery of Semiconductor Devices since 2001.

DOCUMENTATION:

1_cip12134_b Affected product list including

Product discontinuation & new ordering codes

2_cip12134_a Final Qualification Report

3_cip12134_a Customer information package:

Additional information on Cu wiring

4_cip12134_a Customer information package:

General transfer overview

15.05.201315.11.2013

Sales Name Package SP numberOPN

(Orderable Part Numbers )

Sales Name

(L substitued by H)Package SP number Remark

BSP123 L6327 PG-SOT223 SP000089202 BSP123L6327HTSA1 BSP123 H6327 PG-SOT223 SP001058570 refer to PD_005_13

BSP125 L6327 PG-SOT223 SP000089204 BSP125L6327HTSA1 BSP125 H6327 PG-SOT223 SP001058576

BSP125 L6433 PG-SOT223 SP000089211 BSP125L6433HTMA1 BSP125 H6433 PG-SOT223 SP001058578




BSP135 L6433 PG-SOT223 SP000432430 BSP135L6433HTMA1 BSP135 H6433 PG-SOT223 SP001058592




BSP170P L6327 PG-SOT223 SP000089225 BSP170PL6327HTSA1 BSP170P H6327 PG-SOT223 SP001058608



DISCONTINUED NEW (REPLACEMENT)

PRODUCT DISCONTINUATIONreferring to PCN N° 2012-134-B

Transfer of Assembly to Infineon Technologies (Wuxi), China, implementation of Halogen-free mold compound

and Copper wire bonding for products assembled in lead-free package PG-SOT223.

Last order date:

Last delivery date:




BSP298 L6327 PG-SOT223 SP000088258 BSP298L6327HUSA1 BSP298 H6327 PG-SOT223 SP001058626






BSP318S L6327 PG-SOT223 SP000235371 BSP318SL6327HTSA1 BSP318S H6327 PG-SOT223 SP001058838

BSP318S L6534 PG-SOT223 SP000235373 BSP318SL6534HTMA1 BSP318S H6534 PG-SOT223 SP001058764

BSP320S L6327 PG-SOT223 SP000235375 BSP320SL6327HTSA1 BSP320S H6327 PG-SOT223 SP001058768




BSP613P L6327 PG-SOT223 SP000089224 BSP613PL6327HUSA1 BSP613P H6327 PG-SOT223 SP001058788




BSP320S L6433 PG-SOT223 SP000235376 BSP320SL6433HTMA1 BSP320S H6433 PG-SOT223 SP001058772

PD12134 Page 1 of 1 2012-11-15

Product / Process Change Notification

CUSTOMER APPROVAL FORM N° 2012-134-A

Transfer of Assembly to Infineon Technologies (Wuxi), China, implementation of Halogen-free1) mold compound and Copper wire bonding for products assembled in lead-free package PG-SOT223

Please list product(s) affected in your application(s):

Please check the appropriate box below: We agree with this proposed change and its schedule.

We have objections:

We need more information:

We need samples:

Sender Company: Name: Address/Location :

E-Mail:

Telefon: Fax:

Signature Date:

Please return to : your Sales partner Company: Infineon Name:

Address/Location :

E-mail:

Telefon: Fax:

Date: 2012-10-23

Reference Products BSP299 BSP295 BSP318S BSP373N BSP613P BSP613P BSP171P

Wafer Technology/

Location

EH6_500V_NL

Villach

KSN_50V_LL

Villach

SFET_60V_LL

Villach

SFET2_100V_NL

Villach

KSP_-60V_NL

Villach

KSP_-60V_NL

Villach

KSP_-60V_LL

Villach

Chip type L0542 L8053 L1232 L8119 L0904 L0904 L0914

Chip sizes [mm2] 5.47 2.90 2.62 1.54 6.24 6.24 2.89

Package type /

Assembly line location

PG-SOT223-4

Wuxi

PG-SOT223-4

Wuxi

PG-SOT223-4

Wuxi

PG-SOT223-4

Wuxi

PG-SOT223-4

Wuxi

PG-SOT223-4

Wuxi

PG-SOT223-4

Wuxi

Test description Abbr. Condition Readout 1 lot 1 lot 1 lot 1 lot 1st lot 2nd lot 1 lot

Pre-Conditioning

JESD22 A113PC

MSL3 MSL1 MSL1 MSL1 MSL3 MSL1 MSL1

High Temperature

Reverse Bias

JESD22 A-108

HTRB*Tj = 150 °C

VDS = VDS max.

0 hprecon168 h500 h 1000 h

refer to BSP295/BSP373N

VDS = 50V0 / 770 / 770 / 770 / 770 / 77

VDS = 60V0 / 770 / 770 / 770 / 770 / 77

refer to BSP318S VDS = -60V0 / 770 / 770 / 770 / 770 / 77

VDS = -60V0 / 770 / 770 / 770 / 770 / 77

refer to BSP613P

High Temperature

Gate stress

JESD22 A108

HTGS*

Ta = 150 °CVGS = ±100 % VGS max.

for NL, ±80 % VGS max. for LL,

SLL

0 hprecon168 h500 h 1000 h

VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77

VGS = ±16 V0 / 770 / 770 / 770 / 770 / 77

VGS = ±16 V0 / 770 / 770 / 770 / 770 / 77

VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77

VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77

VGS = ±20 V0 / 770 / 770 / 770 / 770 / 77

ref to BSP613P

Temperature CyclingJESD22 A104

TC* Ta min = -55 °C

Ta max = +150 °C

0 cycprecon500 cyc1000 cyc

0 / 850 / 850 / 850 / 85

0 / 850 / 850 / 850 / 85

0 / 850 / 850 / 850 / 85

0 / 850 / 850 / 850 / 85

0 / 850 / 850 / 850 / 85

0 / 850 / 850 / 850 / 85

0 / 850 / 850 / 850 / 85

BSP373N: biggest chip SFET2 wafertechnology

BSP613P: biggest chip from KSP wafertechnology, 1st lot with glue die-attach

BSP613P: biggest chip from KSP wafertechnology, 2nd lot with eutectic die-attach

BSP171P: medium chip from KSP wafertechnology

Assessment of Qualification Test Results: The products assembled in PG-SOT223-4 at Infineon Technologies (Wuxi), China, pass the qualification acc. AEC Q101.

This is based on positive results from all reliability stress tests performed

Moisture Sensitivity Level + 3x solder reflow at 260 °C + 100xTC before HTRB, HTGS, TC, AC, H3TRB, IOL

PCN 2012-134-AQualification of PG-SOT223Transfer of Assembly to Infineon Technologies (Wuxi), China, implementation of Halogen-free mold compound and Copper wire bonding for products assembled in lead-free package PG-SOT223

Final Qualification Report

Reason for choosing the following test vehicles, all assembled in PG-SOT223-4 at Infineon Technologies (Wuxi), China

BSP299: biggest chip from EH6 wafertechnology

BSP295: biggest chip fron KSN wafertechnology

BSP318S: biggest chip fron SFET1 wafertechnology

page 1 / 2 2_cip12134_a_Qualification report_SOT223

Reference Products BSP299 BSP295 BSP318S BSP373N BSP613P BSP613P BSP171P

Autoclave

JESD22 A102AC*

Ta = 121°CRH = 100%

0 hprecon96 h

0 / 770 / 770 / 77

0 / 770 / 770 / 77

refer to BSP295/ BSP613P

refer to BSP295/ BSP613P 0 / 77

0 / 770 / 77

0 / 770 / 770 / 77

refer to BSP295/ BSP613P

High Humidity High

Temp. Reverse Bias

JESD22 A101

H3TRB*

T = 85 °CRH = 85%

VDS = ±80 % from VDS max., but max. up to 80V

0 hprecon168 h500 h 1000 h

VDS = 80 V0 / 770 / 770 / 770 / 770 / 77

VDS = 40 V0 / 770 / 770 / 770 / 770 / 77

VDS = 48 V0 / 770 / 770 / 770 / 770 / 77

refer to BSP295 VDS = - 48 V0 / 770 / 770 / 770 / 770 / 77

VDS = - 48 V0 / 770 / 770 / 770 / 770 / 77

refer to BSP613P

Intermitted Operational Life

Test

MIL-STD 750/Meth.1037

IOL*Delta T = 100 K n = 15000 cyc

0 cycprecon

7500 cyc15000 cyc

refer to BSP2950 / 770 / 770 / 770 / 77

refer to BSP295 refer to BSP2950 / 770 / 770 / 770 / 77

0 / 770 / 770 / 770 / 77

refer to BSP613P

Resistance to Solder heat

JESD22 B106RSH 3x dip at 260 °C

0 hafter stress

0 / 300 / 30

refer to BSP613P refer to BSP613P refer to BSP613P0 / 300 / 30

refer to BSP613P refer to BSP613P

ESD Characterization

ESD STM5.1-1998

JEDEC: EIA/JESD22-A114-B

ESDHBMMM

not performedno change in ESD-

class


class


class


class


class


class


class

Electrical Distribution

AEC Q100-009ED

-55 °C+25 °C+150 °C

0 / 30 0 / 30 0 / 30 0/30 0 / 30 0 / 30 0/30

Destructive Physical Analysis DPArandom sample devices

after Initial, AC & TCpositive on 5 samples positive on 5 samples

refer to BSP295/BSP613P

refer to BSP295/BSP613P

positive on 5 samples positive on 5 samplesrefer to

BSP295/BSP613P

Wire Bond Strength

MIL-STD-750 Method 2037WBS

random sample devices after Initial & TC

positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples

Bond ShearAEC-Q101-003

BSrandom sample devices

after Initial & TCpositive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples positive on 5 samples

page 2 / 2 2_cip12134_a_Qualification report_SOT223

Customer Information Package3_cip12134_a

Copper Wire Bonding

November 2012

Customer Information Package - Copper Wire Bonding

Advantages of Copper wire compared to Gold wire:

Higher electrical conductivity and thermal conductance.

Extended stability of bond-pad connections over time.

Page 2Copyright © Infineon Technologies 2012. All rights reserved.

Higher current-carrying capacity.

Less intermetallic phase growth over temperature.


Higher electrical conductivity and thermal conductance



Extended stability of bond-pad connections over time

intermetallic compoundlimits Au on Alconnection lifetime


stable electricalresistance of bond padconnection enhancesconstant long termperformance of devices


Higher current-carrying capacity



Copper ball, 22um bond wireGold ball, 22um bond wire

Less intermetallic phase growth


The intermetallic phase growth between Copper wire and Aluminium metallization issignificantly slower than with Gold wire. This ensures an extended long term stabilityof bond connections.

Copper wire bonding enables an upgrade of the maximum storage and operatingtemperature from 150°C to 175°C for new applications.

Above cross-section examples were bonded with Au / Cu on a chip with 3.2um Al metal in SOT23 package andsubjected to precon MSL1 + solder reflow at 260deg.C + 100x TC + 1000 hours HTGS test.

Au-Al intermetallic phase

Customer Information Package4_cip12134_a

General information for PCN 2012-134-ATransfer of Assembly and Final Testing to Infineon Technologies Wuxi(China), the high volume production center for leaded Discretes packages(China), the high volume production center for leaded Discretes packages

Introduction

Infineon’s discretes package operations are centered at Wuxi (China) toensure competiveness also in the future

Supported by the Wuxi government, Infineon is investing into a Wuxicompetence center for leaded packages

Expansion of Wuxi leaded package production by capacity transferfrom Malacca

Malacca transformation to higher end products(Leadless, Wafer Level, System-in-Package, Sensors)


(Leadless, Wafer Level, System-in-Package, Sensors)

Customer impact shall be minimized

Deliveries and supply chain will be fully maintained

Transfer methodology ensures highest quality from both sites, Wuxiand Malacca

Remark: This planned change was first officially communicated throughInformation Note 069/09 in October 2009.

Infineon Package Technology PortfolioDiscretes Packages being in / transferred to Wuxi

SMD leaded SOT SOD TSFP SC TSSOP10

Leadless

DiscretesPower Sensors

Through Hole

TO, DIPSMD TO DSO SSOP

Leadless

Through Hole

PSSOSMD LeadedDSOSCTSOP

High Power

PowerModules Easy 62mm Econo EconoPACK+ PrimePACK

Mold on LF P-MCCx MoldP-Mx.xChip on Flex UV GlobetopT-Mx.x

Chip CardLeadframe

basedPackages

Wafer LevelPackages,Bare Die

SurfaceMountTechnology(SMD)

Through Hole

DIP 2)SMD PLCC 2) TSSOP TQFP,LQFP, MQFPLeadless

PowerIC

Laminatebased

Packages

SMD OCCN 1) BGA LBGA xFBGA,xFSGA


Leadless TSLP

Wafer level WLP

Leadless CanPAK SON QFN

SIP LowPower IDCSIP Medi.Power CIPOS

OpencavityDSOF

PrimePACK IHM IHV HybridPACK

T-Mx.xPRELAMPPxx

Flip Chip S-MFCx.x

Wafer Bumped Diced

Without re-distribution WLP (fan-in)

Wafer levelw/redistribution

WLB (fan-in)

eWLB(fan-out)

Bare Die Wirebond Flip chip

Leadless VQFN O-LQFN 1)

1) for specialities only 2) phase-out

Flip chipFCxBGAxF2BGA,xF2SGA

Sapphire Introduction and MotivationExpanding Wuxi – Transforming Malacca

up to 2009 2010 and beyond

Production at Malacca

SOT23, SOT223, SC74. SOT143,TSSFP, TSSOP, SOT89, SC79,SCD80, TSFP3, TSFP4, SOT3x3, TSLP, WLP

Production at Malacca

High volume site at Malacca forLeadless TSLP and WLP

Malacca Malacca


SCD80, TSFP3, TSFP4, SOT3x3, TSLP, WLP

Production at Wuxi, China

SOT23, SOD323

Leadless TSLP and WLP

Production at Wuxi, China

High volume site at Wuxi for SMT packages

SOT223, SOT23, SC74. SOT143,TSSFP, TSSOP, SOT89, SC79,SCD80, TSFP3, TSFP4, SOT3x3,SOD323

Wuxi Wuxi

Existing Wuxi production experience and futureportfolio

SC 79

SOT 89

SOT 23

SOD323

SOT 323 SOT 343 SOT 363

SC 74

SCD 80

TSSFP

SOT23 / SOD323

Pre-assembly + Assembly / Test

12 Billion units manufactured since2005

SOT23 / SOD323

Pre-assembly + Assembly / Test

12 Billion units manufactured since2005

> 12B pcs production experience at Wuxi on SOT23 / SOT323> 12B pcs production experience at Wuxi on SOT23 / SOT323

Package

Capability

Production Experience

Package

Capability

Production Experience

Expanded PortfolioExpanded Portfolio


Gull Wing / Flat Lead packages

SOT 23 SOD323SOT 3X3 SOT 223

SOT 89 SOT143SC 79 / SCD 80 SC74TSSFP TSFPTSSOP10

Gull Wing / Flat Lead packages

SOT 23 SOD323SOT 3X3 SOT 223

SOT 89 SOT143SC 79 / SCD 80 SC74TSSFP TSFPTSSOP10

SOT 89

SOT 223

SC 74

TSSOP 10

TSFP 3 TSFP 4

TSSFP

SOT 143

January 2001

AF Transistors RF TransistorsAF Diodes RF Diodes

Current production covers numerouscustomers in all applications such as a

Automotive

IndustrialMobileConsumer

January 2001

AF Transistors RF TransistorsAF Diodes RF Diodes

Current production covers numerouscustomers in all applications such as a

Automotive

IndustrialMobileConsumer

Start production

Applications

Existing CustomerPortfolio

Start production

Applications

Existing CustomerPortfolio

Infineon’s Operation SitesWuxi/China is a strategic part of Infineon’s Operations


Productionin

Competence

IMMRPD

SOT23

SOT89, SOT143 SC79 / SCD80

Preliminary PCN Schedule Outlookas of Nov 2012

SOT3x3 Jan 2010 TSFP3/4 Dec 2010 SC74 LED drivers Jan 2011 SOT223 Jun 2011 SC74 May 2011

Dec 2009 2010 - 2012

SOT23 Jun 2011

Copyright © Infineon Technologies 2012. All rights reserved.

CompetenceCenterIMM

PSD

ATV

TSSOP10 Apr 2013

Wuxi

SOT23 Jun 2011 SOT3x3 Jun 2011 SOT223 Nov 2012 SOT89 Nov 2012

Page 7

Transfer Methodology and Technology Options

Minimized potential risk by transfer of methodology from Malacca to Wuxi

Quality, Reliability, electrical performance and package dimensions of theWuxi products will be the same as for Malacca products.

Only qualified technologies, processes and equipments are transferred.

Automotive Standard AEC-Q100 / Q101 is used as qualification guidelineon defined reference products for each package assembly line.

Copyright © Infineon Technologies 2012. All rights reserved.

Wire bonding & mold compound materials may change for selected

products to:

Halogen free mold compound, where essential for environmental reasons

Copper wiring with extended stability of bond-pad connections over time

For details please refer to the individual PCN documents

Page 8

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